JP7618601B2 - 複数のパターニング放射吸収元素および／または垂直組成勾配を備えたフォトレジスト - Google Patents

複数のパターニング放射吸収元素および／または垂直組成勾配を備えたフォトレジスト Download PDF

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JP7618601B2
JP7618601B2 JP2021577241A JP2021577241A JP7618601B2 JP 7618601 B2 JP7618601 B2 JP 7618601B2 JP 2021577241 A JP2021577241 A JP 2021577241A JP 2021577241 A JP2021577241 A JP 2021577241A JP 7618601 B2 JP7618601 B2 JP 7618601B2
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reactant
photoresist material
tin
euv
substrate
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JPWO2020264557A5 (https=
JP2022540789A (ja
JP2022540789A5 (https=
Inventor
ワイドマン・ティモシー・ウィリアム
グ・ケヴィン・リー
ナルディ・ケイティ・リン
ウー・チェンガオ
ヴォロスキー・ボリス
ハンセン・エリック・カルヴィン
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Lam Research Corp
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Lam Research Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G03F7/0043—Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/167—Coating processes; Apparatus therefor from the gas phase, by plasma deposition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Metallurgy (AREA)
  • Materials For Photolithography (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2021577241A 2019-06-28 2020-06-24 複数のパターニング放射吸収元素および／または垂直組成勾配を備えたフォトレジスト Active JP7618601B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025002666A JP7824443B2 (ja) 2019-06-28 2025-01-08 複数のパターニング放射吸収元素および／または垂直組成勾配を備えたフォトレジスト

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962868710P 2019-06-28 2019-06-28
US62/868,710 2019-06-28
PCT/US2020/070172 WO2020264557A1 (en) 2019-06-28 2020-06-24 Photoresist with multiple patterning radiation-absorbing elements and/or vertical composition gradient

Related Child Applications (1)

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JP2025002666A Division JP7824443B2 (ja) 2019-06-28 2025-01-08 複数のパターニング放射吸収元素および／または垂直組成勾配を備えたフォトレジスト

Publications (4)

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JP2022540789A JP2022540789A (ja) 2022-09-20
JPWO2020264557A5 JPWO2020264557A5 (https=) 2023-06-19
JP2022540789A5 JP2022540789A5 (https=) 2023-06-19
JP7618601B2 true JP7618601B2 (ja) 2025-01-21

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JP2021577241A Active JP7618601B2 (ja) 2019-06-28 2020-06-24 複数のパターニング放射吸収元素および／または垂直組成勾配を備えたフォトレジスト
JP2025002666A Active JP7824443B2 (ja) 2019-06-28 2025-01-08 複数のパターニング放射吸収元素および／または垂直組成勾配を備えたフォトレジスト

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Country Link
US (1) US12585184B2 (https=)
EP (1) EP3990982A4 (https=)
JP (2) JP7618601B2 (https=)
KR (2) KR102883380B1 (https=)
CN (1) CN114270266A (https=)
TW (1) TWI907354B (https=)
WO (1) WO2020264557A1 (https=)

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