JP6633062B2 - パターン化基板の製造方法 - Google Patents
パターン化基板の製造方法 Download PDFInfo
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- JP6633062B2 JP6633062B2 JP2017517268A JP2017517268A JP6633062B2 JP 6633062 B2 JP6633062 B2 JP 6633062B2 JP 2017517268 A JP2017517268 A JP 2017517268A JP 2017517268 A JP2017517268 A JP 2017517268A JP 6633062 B2 JP6633062 B2 JP 6633062B2
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Description
このような特性によって、ブロック共重合体は、ナノ線製作、量子ドットまたは金属ドットなどのような多様な次世代ナノ素子の製作や所定の基板上に高密度のパターンを形成できるリソグラフィー法などへの適用が検討されている(例えば、非特許文献1等参照)。
3nm−1〜5nm−1=nq/(2×π)
本出願のブロック共重合体のいずれか一つのブロックは、GIWAXS(Grazing Incident Wide Angle X ray Scattering)スペクトルの12nm−1〜16nm−1範囲の散乱ベクター(scattering vector)の回折パターンの−90度〜−70度の範囲内の方位角(azimuthal angle)および70度〜90度の範囲内の方位角(azimuthal angle)のすべてにおいてピークを表わすことができる。前記ピークを表わすブロックは後述する側鎖を含むブロックであり得る。本明細書で前記側鎖を含むブロックは第1ブロックであり得る。前記で方位角は回折パターンの上方向(アウトオブプレーン(out of plane)回折方向)の角度を0度にした時の方位角であり、これは時計回り方向に測定された方位角である。換言すれば時計回り方向に測定された角度は正数で表示され、反時計回り方向に測定された角度は負数で表示される。前記各方位角で観察されるピークの半値幅(Full width at half maximum、FWHM)は5度〜70度の範囲内であり得る。前記半値幅は、他の例示において7度以上、9度以上、11度以上、13度以上、15度以上、17度以上、19度以上、21度以上、25度以上、30度以上、35度以上、40度以上または45度以上であり得る。前記半値幅は他の例示において65度以下または60度以下であり得る。GIWAXSスペクトルを求める方式は特に制限されず、これは後述する実施例の記載方式により求めることができる。求められたスペクトルの回折パターンピークのプロファイルをガウスフィッティング(Gauss fitting)した後、フィッティングされた結果から前記半値幅を求めることができる。この場合、ガウスフィッティング結果が半分しか観察されない場合に前記で意味する半値幅は前記半分しか観察されない結果から求められる値の2倍と定義され得る。前記ガウスフィッティング時にR自乗(R square)は約0.26〜0.95の範囲内である。すなわち、前記範囲のうちいずれか一つのR自乗で前述した半値幅が観察されればよい。前記のような情報を得ることができる方式は公知であり、例えば、オリジン(origin)などの数値解析プログラムを適用することができる。
本出願のブロック共重合体または前記ブロック共重合体のいずれか一つのブロックは、DSC(Differential scanning calorimetry)分析で−80℃〜200℃の範囲内で溶融転移(melting transition)ピークまたは等方転移(isotropic transition)ピークを表わすことができる。ブロック共重合体のいずれか一つのブロックがDSC分析で前記挙動を示し、このようなブロックを含むブロック共重合体が前記条件2と3を同時に満足する場合、DSC分析で前記挙動を示すブロックは、条件2で記述したGIWAXSでのピーク、すなわちGIWAXSスペクトルの12nm−1〜16nm−1範囲の散乱ベクター(scattering vector)の回折パターンの−90度〜−70度の範囲内の方位角(azimuthal angle)および70度〜90度の範囲内の方位角(azimuthal angle)のすべてにおいてピークを表わすブロック、例えば第1ブロックであり得る。ブロック共重合体または前記ブロック共重合体のいずれか一つのブロックは溶融転移ピークまたは等方転移ピークのうちいずれか一つのピークだけを現すこともでき、2個のピークすべてを表わすこともできる。このようなブロック共重合体は、自己組織化に適合した結晶(crystal)相および/または液晶(liquid crystal)相を全体的に表わすか、そのような結晶相および/または液晶相を表わすブロックを含む共重合体であり得る。
例えば、前記等方転移ピークと溶融転移ピークが同時に現れる場合に前記等方転移ピークが現れる温度(Ti)と前記溶融転移ピークが現れる温度(Tm)の差(Ti−Tm)は5℃〜70℃の範囲内にあり得る。前記差(Ti−Tm)は他の例示において10℃以上、15℃以上、20℃以上、25℃以上、30℃以上、35℃以上、40℃以上、45℃以上、50℃以上、55℃以上または60℃以上であり得る。等方転移ピークの温度(Ti)と溶融転移ピークの温度(Tm)の差(Ti−Tm)が前記範囲内であるブロック共重合体またはそのようなブロックを含むブロック共重合体は相分離ないしは自己組織化特性が優秀に維持され得る。
10℃≦Tm−12.25℃×n+149.5℃≦10℃
数式1でTmは前記ブロック共重合体または前記側鎖を有するブロックの溶融転移ピークが現れる温度であり、nは前記側鎖の鎖形成原子の数である。
本出願のブロック共重合体は、XRD分析(X線回折分析、X−ray Diffraction analysis)時に所定範囲の散乱ベクター(q)内で少なくとも一つのピークを表わすブロックを含むことができる。ブロック共重合体が前記条件1および/または2とともに前記条件3を満足する場合に、条件1および/または2を満足するブロックが前記条件3を満足するブロックであり得る。条件3を満足するブロックは前記第1ブロックであり得る。
本出願のブロック共重合体は、第1ブロックであって、後述する側鎖を有するブロックを含むことができ、前記側鎖の鎖形成原子の数(n)が、前記条件3でのような方式で遂行されるX線回折分析によって求められる散乱ベクター(q)と下記の数式2を満足することができる。
3nm−1〜5nm−1=nq/(2×π)
数式2でnは前記鎖形成原子の数であり、qは、前記側鎖を含むブロックに対するX線回折分析でピークが観察される最も小さい散乱ベクター(q)であるか、あるいは最も大きいピーク面積のピークが観察される散乱ベクター(q)である。また、数式2でπは円周率を意味する。
本出願のブロック共重合体の第1ブロックの表面エネルギーと前記第2ブロックの表面エネルギーの差の絶対値が10mN/m以下、9mN/m以下、8mN/m以下、7.5mN/m以下または7mN/m以下であり得る。前記表面エネルギーの差の絶対値は1.5mN/m、2mN/mまたは2.5mN/m以上であり得る。このような範囲の表面エネルギーの差の絶対値を有する第1ブロックと第2ブロックが共有結合によって連結された構造は、適切な非相溶性による相分離によって効果的な微細相分離(microphase seperation)を誘導することができる。前記で第1ブロックは、例えば、後述する側鎖を有するブロックまたはハロゲン原子を有さない芳香族構造を含むブロックであり得る。
ブロック共重合体で第1ブロックと第2ブロックの密度の差の絶対値は0.25g/cm3以上、0.3g/cm3以上、0.35g/cm3以上、0.4g/cm3以上または0.45g/cm3以上であり得る。前記密度の差の絶対値は0.9g/cm3以上、0.8g/cm3以下、0.7g/cm3以下、0.65g/cm3以下または0.6g/cm3以下であり得る。このような範囲の密度差の絶対値を有する第1ブロックと第2ブロックが共有結合によって連結された構造は、適切な非相溶性による相分離によって効果的な微細相分離(microphase seperation)を誘導することができる。
ブロック共重合体は、体積分率が0.4〜0.8の範囲内にある第1ブロックと、体積分率が0.2〜0.6の範囲内にある第2ブロックを含むことができる。ブロック共重合体が前記側鎖を含む場合、前記鎖を有するブロックの体積分率が0.4〜0.8の範囲内にあり得る。例えば、前記鎖が第1ブロックに含まれる場合に第1ブロックの体積分率が0.4〜0.8の範囲内であり、第2ブロックの体積分率が0.2〜0.6の範囲内にあり得る。第1ブロックと第2ブロックの体積分率の合計は1であり得る。前記のような体積分率で各ブロックを含むブロック共重合体は優秀な自己組織化特性を表わすことができる。ブロック共重合体の各ブロックの体積分率は各ブロックの密度とGPC(Gel Permeation Chromatogrph)により測定される分子量に基づいて求めることができる。前記で密度は前述した方式により求めることができる
化学式1でXは他の例示において単結合、酸素原子、カルボニル基、−C(=O)−O−または−O−C(=O)−であるか、−C(=O)−O−であり得るが、これに制限されるものではない。
NMR分析は三重共鳴5mm探針(probe)を有するVarian Unity Inova(500MHz)分光計を含むNMR分光計を使って常温で遂行した。NMR測定用溶媒(CDCl3)に分析対象物質を約10mg/ml程度の濃度に希釈させて使用し、化学的移動はppmで表現した。
br=広い信号、s=単一線、d=二重線、dd=二重二重線、t=三重線、dt=二重三重線、q=四重線、p=五重線、m=多重線。
数平均分子量(Mn)および分子量分布はGPC(Gel permeation chromatography)を使って測定した。5mLバイアル(vial)に実施例または比較例のブロック共重合体またはマクロ開始剤などの分析対象物を入れ、約1mg/mL程度の濃度になるようにTHF(tetrahydro furan)に希釈する。その後、Calibration用標準試料と分析しようとする試料をsyringe filter(pore size:0.45μm)を通じて濾過させた後測定した。分析プログラムはAgilent technologies社のChemStationを使用し、試料のelution timeをcalibration curveと比較して重量平均分子量(Mw)および数平均分子量(Mn)をそれぞれ求め、その比率(Mw/Mn)で分子量分布(PDI)を計算した。GPCの測定条件は下記の通りである。
機器:Agilent technologies社の1200 series
カラム:Polymer laboratories社のPLgel mixed B 2個使用
溶媒:THF
カラム温度:35℃
サンプル濃度:1mg/mL、200L注入
標準試料:ポリスチレン(Mp:3900000、723000、316500、52200、31400、7200、3940、485)
XRD分析はポハンの加速器4Cビームラインで試料にX線を透過させて散乱ベクター(q)による散乱強度を測定することによって測定した。試料としては、特別な前処理なしに合成された重合体を精製した後、真空オーブンで一日程度維持することによって乾燥させた粉末状態の重合体をXRD測定用セルに入れて使用した。XRDパターン分析時には、垂直大きさが0.023mmであり、水平大きさが0.3mmであるX線を利用し、検出器は2D marCCDを利用した。散乱して出る2D回折パターンをイメージで得た。得られた回折パターンを最小自乗法を適用した数値分析学的な方式で分析して散乱ベクターおよび半高さ幅などの情報を得た。前記分析時にはオリジン(origin)プログラムを適用し、XRD回折パターンで最も最小の強度(intensity)を見せる部分をベースライン(baseline)にして前記での強度(intensity)を0になるようにした状態で前記XRDパターンピークのプロファイルをガウシアンフィッティング(Gaussian fitting)し、フィッティングされた結果から前記散乱ベクターと半高さ幅を求めた。ガウシアンフィッティング時にR自乗(R square)は少なくとも0.96以上となるようにした。
表面エネルギーは水滴型分析器(Drop Shape Analyzer、KRUSS社のDSA100製品)を使って測定した。測定しようとする物質(重合体)をフルオロベンゼン(flourobenzene)に約2重量%の固形分濃度に希釈させてコート液を製造し、製造されたコート液をシリコンウェハに約50nmの厚さおよび4cm2のコート面積(横:2cm、縦:2cm)にスピンコートした。コート層を常温で約1時間の間乾燥し、引き続き約160℃で約1時間の間熱的熟成(thermal annealing)させた。熱的熟成を経た膜に表面張力(surface tension)が公知されている脱イオン化水を落としてその接触角を求める過程を5回繰り返し、得られた5個の接触角数値の平均値を求めた。同様に表面張力が公知されているジヨードメタン(diiodomethane)を落としてその接触角を求める過程を5回繰り返し、得られた5個の接触角数値の平均値を求めた。求められた脱イオン化水とジヨードメタンに対する接触角の平均値を利用してOwens−Wendt−Rabel−Kaelble方法によって溶媒の表面張力に関する数値(Strom値)を代入して表面エネルギーを求めた。ブロック共重合体の各ブロックに対する表面エネルギーの数値は、前記ブロックを形成する単量体でのみ製造された単独重合体(homopolymer)に対して前述した方法で求めた。
ブロック共重合体の各ブロックの体積分率は、各ブロックの常温での密度とGPCによって測定された分子量に基づいて計算した。前記で密度は、浮力法を利用して測定し、具体的には空気中での質量と密度を知っている溶媒(エタノール)内に分析しようとする試料を入れ、その質量を通じて計算した。
下記の化学式Aの化合物(DPM−C12)は次の方式で合成した。250mLのフラスコにヒドロキノン(hydroquinone)(10.0g、94.2mmol)および1−ブロモドデカン(1−Bromododecane)(23.5g、94.2mmol)を入れ、100mLのアセトニトリル(acetonitrile)に溶かした後過量のポタシウムカーボネート(potassium carbonate)を添加し、75℃で約48時間の間窒素条件下で反応させた。反応後残存するポタシウムカーボネートをフィルタリングして除去し、反応に使ったアセトニトリルも除去した。これにDCM(dichloromethane)と水の混合溶媒を添加してウォークアップし、分離した有機層を集めてmgSO4に通過させて脱水した。引き続き、カラムクロマトグラフィーでDCM(dichloromethane)を使って白色固体相の目的物(4−ドデシルオキシフェノール)(9.8g、35.2mmol)を約37%の収得率で得た。
1H−NMR(CDCl3):d6.77(dd、4H);d4.45(s、1H);d3.89(t、2H);d1.75(p、2H);d1.43(p、2H);d1.33−1.26(m、16H);d0.88(t、3H)。
1H−NMR(CDCl3):d7.02(dd、2H);d6.89(dd、2H);d6.32(dt、1H);d5.73(dt、1H);d3.94(t、2H);d2.05(dd、3H);d1.76(p、2H);d1.43(p、2H);1.34−1.27(m、16H);d0.88(t、3H)。
1−ブロモドデカンの代わりに1−ブロモオクタンを使ったことを除いては製造例1に準じた方式で下記の化学式Bの化合物を合成した。前記化合物に対するNMR分析結果を下記に表示した。
1H−NMR(CDCl3):d7.02(dd、2H);d6.89(dd、2H);d6.32(dt、1H);d5.73(dt、1H);d3.94(t、2H);d2.05(dd、3H);d1.76(p、2H);d1.45(p、2H);1.33−1.29(m、8H);d0.89(t、3H)。
1−ブロモドデカンの代わりに1−ブロモデカンを使ったことを除いては製造例1に準じた方式で下記の化学式Cの化合物を合成した。前記化合物に対するNMR分析結果を下記に表示した。
1H−NMR(CDCl3):d7.02(dd、2H);d6.89(dd、2H);d6.33(dt、1H);d5.72(dt、1H);d3.94(t、2H);d2.06(dd、3H);d1.77(p、2H);d1.45(p、2H);1.34−1.28(m、12H);d0.89(t、3H)。
1−ブロモドデカンの代わりに1−ブロモテトラデカンを使ったことを除いては製造例1に準じた方式で下記の化学式Dの化合物を合成した。前記化合物に対するNMR分析結果を下記に表示した。
1H−NMR(CDCl3):d7.02(dd、2H);d6.89(dd、2H);d6.33(dt、1H);d5.73(dt、1H);d3.94(t、2H);d2.05(dd、3H);d1.77(p、2H);d1.45(p、2H);1.36−1.27(m、20H);d0.88(t、3H.)
1−ブロモドデカンの代わりに1−ブロモヘキサデカンを使ったことを除いては製造例1に準じた方式で下記の化学式Eの化合物を合成した。前記化合物に対するNMR分析結果を下記に表示した。
1H−NMR(CDCl3):d7.01(dd、2H);d6.88(dd、2H);d6.32(dt、1H);d5.73(dt、1H);d3.94(t、2H);d2.05(dd、3H);d1.77(p、2H);d1.45(p、2H);1.36−1.26(m、24H);d0.89(t、3H)
製造例1のモノマー(A)2.0gとRAFT(Reversible Addition?Fragmentation chain Transfer)試薬であるシアノイソプロチルジチオベンゾエート64mg、ラジカル開始剤であるAIBN(Azobisisobutyronitrile)23mgおよびベンゼン5.34mLを10mL Schlenk flaskに入れて窒素雰囲気下で常温で30分の間撹はんした後、70℃で4時間の間RAFT(Reversible Addition?Fragmentation chain Transfer)重合反応を遂行した。重合後反応溶液を抽出溶媒であるメタノール250mLに沈殿させた後、減圧濾過して乾燥させ、桃色のマクロ開始剤を製造した。前記マクロ開始剤の収得率は約82.6重量%であり、数平均分子量(Mn)および分子量分布(Mw/Mn)はそれぞれ9,000および1.16であった。マクロ開始剤0.3g、ペンタフルオロスチレンモノマー2.7174gおよびベンゼン1.306mLを10mL Schlenk flaskに入れて窒素雰囲気下で常温で30分の間撹はんした後、115℃で4時間の間RAFT(Reversible Addition?Fragmentation chain Transfer)重合反応を遂行した。重合後反応溶液を抽出溶媒であるメタノール250mLに沈殿させた後、減圧濾過して乾燥させて薄桃色のブロック共重合体を製造した。前記ブロック共重合体の収得率は約18重量%であり、数平均分子量(Mn)および分子量分布(Mw/Mn)はそれぞれ16,300および1.13であった。前記ブロック共重合体は製造例1のモノマー(A)から由来した第1ブロックと前記ペンタフルオロスチレンモノマーから由来した第2ブロックを含む。
製造例1のモノマー(A)の代わりに製造例2のモノマー(B)を使用したことを除いては製造例6に準ずる方式でマクロ開始剤およびペンタフルオロスチレンをモノマーにしてブロック共重合体を製造した。前記ブロック共重合体は製造例2のモノマー(B)から由来した第1ブロックと前記ペンタフルオロスチレンモノマーから由来した第2ブロックを含む。
製造例1のモノマー(A)の代わりに製造例3のモノマー(C)を使用したことを除いては製造例6に準ずる方式でマクロ開始剤およびペンタフルオロスチレンをモノマーにしてブロック共重合体を製造した。前記ブロック共重合体は製造例3のモノマー(C)から由来した第1ブロックと前記ペンタフルオロスチレンモノマーから由来した第2ブロックを含む。
製造例1のモノマー(A)の代わりに製造例4のモノマー(D)を使用したことを除いては製造例6に準ずる方式でマクロ開始剤およびペンタフルオロスチレンをモノマーにしてブロック共重合体を製造した。前記ブロック共重合体は製造例4のモノマー(D)から由来した第1ブロックと前記ペンタフルオロスチレンモノマーから由来した第2ブロックを含む。
製造例1のモノマー(A)の代わりに製造例5のモノマー(E)を使用したことを除いては製造例6に準ずる方式でマクロ開始剤およびペンタフルオロスチレンをモノマーにしてブロック共重合体を製造した。前記ブロック共重合体は製造例5のモノマー(E)から由来した第1ブロックと前記ペンタフルオロスチレンモノマーから由来した第2ブロックを含む。
前記製造された各マクロ開始剤に対して前記言及した方式でXRDパターンを分析した結果は下記の表2に整理して記載した。
製造例6〜10で製造された各ブロック共重合体の特性を前記言及した方式で評価した結果を下記の表3に整理して記載した。
銅基板上に酸素プラズマ処理を遂行し、その表面に製造例6のブロック共重合体を適用して高分子膜を形成した。酸素プラズマは前記銅基板の表面に約90WのRF電力、約70sccmの酸素流量および約120mTorrの工程圧力で遂行した。前記のように形成された酸素プラズマ処理層上に中性層の形成のような別途の処理を遂行せず、製造例6のブロック共重合体を適用して高分子膜を形成した。具体的にブロック共重合体をトルエン(toluene)に1.5重量%の固形分濃度に希釈させて製造したコート液をスピンコートし、常温で約1時間の間乾燥させた後、さらに約160℃〜250℃の温度で約1時間の間熱的熟成(thermal annealing)して自己組織化された膜を形成した。前記自己組織化された膜に対するSEMイメージは図4に現れており、これを通じて適切な自己組織化構造が形成されたことを確認した。
製造例6のブロック共重合体の代わりに製造例7のブロック共重合体を適用したことを除いては、実施例1と同じ自己組織化された高分子膜を形成した。SEM写真の確認結果実施例1のように適切な自己組織化構造が形成されたことを確認することができた。
製造例6のブロック共重合体の代わりに製造例8のブロック共重合体を適用したことを除いては、実施例1と同じ自己組織化された高分子膜を形成した。SEM写真の確認結果実施例1のように適切な自己組織化構造が形成されたことを確認することができた。
製造例6のブロック共重合体の代わりに製造例9のブロック共重合体を適用したことを除いては、実施例1と同じ自己組織化された高分子膜を形成した。SEM写真の確認結果実施例1のように適切な自己組織化構造が形成されたことを確認することができた。
製造例6のブロック共重合体の代わりに製造例10のブロック共重合体を適用したことを除いては、実施例1と同じ自己組織化された高分子膜を形成した。SEM写真の確認結果実施例1のように適切な自己組織化構造が形成されたことを確認することができた。
Claims (16)
- 前記基板は、金属基板である、請求項1に記載のパターン化基板の製造方法。
- 前記基板は金、銅、チタン、ニッケル、銀、アルミニウム、ゲルマニウム、タングステン、錫、アンチモン、インジウム、カドミウム、パラジウム、鉛、亜鉛および白金からなる群から選択された一つ以上の金属または前記一つ以上の金属の酸化物、窒化物または硫化物を含む、請求項1に記載のパターン化基板の製造方法。
- 前記酸素プラズマは、30W〜2000WのRF電力、5mTorr〜300mTorrの工程圧力および20sccm〜100sccmの酸素流量下で遂行される、請求項1に記載のパターン化基板の製造方法。
- 前記高分子膜は酸素プラズマ処理された基板の表面に接して形成される、請求項1に記載のパターン化基板の製造方法。
- 前記自己組織化構造は垂直配向されたブロック共重合体を含む、請求項1に記載のパターン化基板の製造方法。
- 前記自己組織化構造はラメラ構造である、請求項1に記載のパターン化基板の製造方法。
- 前記ブロック共重合体の第1ブロックはGIWAXSスペクトルの12nm−1〜16nm−1範囲の散乱ベクターの回折パターンの−90度〜−70度の範囲内の方位角でピークを表わし、また、70度〜90度の範囲内の方位角でピークを表わす、請求項1に記載のパターン化基板の製造方法。
- 前記ブロック共重合体の第1ブロックは、DSC分析で−80℃〜200℃の範囲内で溶融転移ピークまたは等方転移ピークを表わす、請求項1に記載のパターン化基板の製造方法。
- 前記ブロック共重合体の第1ブロックは、XRD分析時に0.5nm−1〜10nm−1の散乱ベクター(q)範囲内で0.2〜0.9nm−1の範囲内の半値幅を有するピークを表わす、請求項1に記載のパターン化基板の製造方法。
- 前記化学式1の炭化水素鎖の鎖形成原子の数(n)と前記ブロック共重合体の第1ブロックに対するXRD分析によって求められる散乱ベクター(q)は下記の数式2を満足する、請求項1に記載のパターン化基板の製造方法:
[数式2]
3nm−1〜5nm−1=nq/(2×π)
数式2でnは前記炭化水素鎖の鎖形成原子の数であり、qは、前記第1ブロックに対するX線回折分析でピークが観察される最も小さい散乱ベクター(q)であるか、あるいは最も大きいピーク面積のピークが観察される散乱ベクター(q)である。 - 前記ブロック共重合体の第1ブロックの表面エネルギーと第2ブロックの表面エネルギーの差の絶対値が10mN/m以下である、請求項1に記載のパターン化基板の製造方法。
- 前記ブロック共重合体の第1ブロックと第2ブロックの密度の差の絶対値は0.25g/cm3以上である、請求項1に記載のパターン化基板の製造方法。
- 前記ブロック共重合体の第1ブロックの体積分率は0.2〜0.6の範囲内にあり、前記第2ブロックの体積分率は0.4〜0.8の範囲内にある、請求項1に記載のパターン化基板の製造方法。
- 自己組織化構造を形成しているブロック共重合体のいずれか一つのブロックを選択的に除去する段階をさらに含む、請求項1に記載のパターン化基板の製造方法。
- ブロック共重合体のいずれか一つのブロックを選択的に除去した後に基板を食刻する段階をさらに含む、請求項15に記載のパターン化基板の製造方法。
Applications Claiming Priority (27)
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KR1020140175411A KR101762487B1 (ko) | 2013-12-06 | 2014-12-08 | 블록 공중합체 |
KR1020140175410A KR101768290B1 (ko) | 2013-12-06 | 2014-12-08 | 블록 공중합체 |
KR10-2014-0175406 | 2014-12-08 | ||
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KR1020140175400A KR101780097B1 (ko) | 2013-12-06 | 2014-12-08 | 블록 공중합체 |
KR10-2014-0175407 | 2014-12-08 | ||
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KR10-2014-0175410 | 2014-12-08 | ||
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KR10-2014-0175401 | 2014-12-08 | ||
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KR1020140175407A KR101763010B1 (ko) | 2013-12-06 | 2014-12-08 | 블록 공중합체 |
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KR10-2014-0175411 | 2014-12-08 | ||
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Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10160822B2 (en) | 2013-12-06 | 2018-12-25 | Lg Chem, Ltd. | Monomer and block copolymer |
EP3078690B1 (en) * | 2013-12-06 | 2021-01-27 | LG Chem, Ltd. | Block copolymer |
JP6496318B2 (ja) | 2013-12-06 | 2019-04-03 | エルジー・ケム・リミテッド | ブロック共重合体 |
WO2015084131A1 (ko) | 2013-12-06 | 2015-06-11 | 주식회사 엘지화학 | 블록 공중합체 |
JP6419820B2 (ja) | 2013-12-06 | 2018-11-07 | エルジー・ケム・リミテッド | ブロック共重合体 |
WO2015084123A1 (ko) | 2013-12-06 | 2015-06-11 | 주식회사 엘지화학 | 블록 공중합체 |
JP6402867B2 (ja) | 2013-12-06 | 2018-10-10 | エルジー・ケム・リミテッド | ブロック共重合体 |
EP3101043B1 (en) * | 2013-12-06 | 2021-01-27 | LG Chem, Ltd. | Block copolymer |
US10081698B2 (en) | 2013-12-06 | 2018-09-25 | Lg Chem, Ltd. | Block copolymer |
WO2015084121A1 (ko) * | 2013-12-06 | 2015-06-11 | 주식회사 엘지화학 | 블록 공중합체 |
JP6334706B2 (ja) | 2013-12-06 | 2018-05-30 | エルジー・ケム・リミテッド | ブロック共重合体 |
US10227438B2 (en) | 2013-12-06 | 2019-03-12 | Lg Chem, Ltd. | Block copolymer |
CN105960422B (zh) * | 2013-12-06 | 2019-01-18 | 株式会社Lg化学 | 嵌段共聚物 |
US10239980B2 (en) | 2013-12-06 | 2019-03-26 | Lg Chem, Ltd. | Block copolymer |
US10287430B2 (en) | 2014-09-30 | 2019-05-14 | Lg Chem, Ltd. | Method of manufacturing patterned substrate |
JP6538159B2 (ja) * | 2014-09-30 | 2019-07-03 | エルジー・ケム・リミテッド | ブロック共重合体 |
US10310378B2 (en) | 2014-09-30 | 2019-06-04 | Lg Chem, Ltd. | Block copolymer |
WO2016052994A1 (ko) | 2014-09-30 | 2016-04-07 | 주식회사 엘지화학 | 블록 공중합체 |
EP3202798B1 (en) | 2014-09-30 | 2022-01-12 | LG Chem, Ltd. | Block copolymer |
EP3214102B1 (en) | 2014-09-30 | 2022-01-05 | LG Chem, Ltd. | Block copolymer |
CN107077066B9 (zh) | 2014-09-30 | 2021-05-14 | 株式会社Lg化学 | 制造图案化基底的方法 |
CN107075028B (zh) | 2014-09-30 | 2020-04-03 | 株式会社Lg化学 | 嵌段共聚物 |
WO2016052999A1 (ko) | 2014-09-30 | 2016-04-07 | 주식회사 엘지화학 | 블록 공중합체 |
CN107075054B (zh) * | 2014-09-30 | 2020-05-05 | 株式会社Lg化学 | 嵌段共聚物 |
CN109996840B (zh) | 2016-11-30 | 2022-03-29 | 株式会社Lg化学 | 聚合物组合物 |
WO2018101741A1 (ko) | 2016-11-30 | 2018-06-07 | 주식회사 엘지화학 | 적층체 |
KR101946775B1 (ko) | 2016-11-30 | 2019-02-12 | 주식회사 엘지화학 | 블록 공중합체 |
JP7027674B2 (ja) * | 2017-09-13 | 2022-03-02 | エルジー・ケム・リミテッド | パターン化基板の製造方法 |
KR20200034020A (ko) | 2018-09-12 | 2020-03-31 | 삼성전자주식회사 | 전자 장치 및 그의 제어 방법 |
Family Cites Families (160)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE576615A (ja) | 1958-03-13 | |||
US3976672A (en) | 1974-12-26 | 1976-08-24 | Uniroyal Inc. | (Hydrocarbylphenylsulfonyl)alkyltrimethylstannanes |
DE3230516C3 (de) | 1981-08-20 | 2000-09-14 | Mitsubishi Petrochemical Co | Verfahren zur Herstellung eines Vernetzungsprodukts |
WO1989003401A1 (en) | 1987-10-08 | 1989-04-20 | Idemitsu Kosan Company Limited | Styrenic polymer and process for its production |
JPH01260360A (ja) | 1988-04-12 | 1989-10-17 | Nippon Oil & Fats Co Ltd | 逆相クロマトグラフィー用充填剤 |
US5115056A (en) | 1989-06-20 | 1992-05-19 | Ciba-Geigy Corporation | Fluorine and/or silicone containing poly(alkylene-oxide)-block copolymers and contact lenses thereof |
EP0511407B1 (en) | 1990-11-21 | 1996-05-29 | Idemitsu Kosan Company Limited | Styrenic copolymer and production thereof |
US5234604A (en) | 1991-02-26 | 1993-08-10 | Betz Laboratories, Inc. | Water soluble block copolymers and methods of use therof |
JP3121116B2 (ja) | 1992-05-21 | 2000-12-25 | 出光興産株式会社 | スチレン系ブロック共重合体及びその製造方法 |
JPH0665333A (ja) | 1992-08-21 | 1994-03-08 | Shin Etsu Chem Co Ltd | 単分散性共重合体及びその製造方法 |
US5728431A (en) | 1996-09-20 | 1998-03-17 | Texas A&M University System | Process for forming self-assembled polymer layers on a metal surface |
US5783614A (en) | 1997-02-21 | 1998-07-21 | Copytele, Inc. | Polymeric-coated dielectric particles and formulation and method for preparing same |
JP3392687B2 (ja) * | 1997-02-21 | 2003-03-31 | 信越化学工業株式会社 | ブロック−グラフト共重合体およびこれを用いて作製した高分子固体電解質 |
JP3396390B2 (ja) | 1997-03-04 | 2003-04-14 | 信越化学工業株式会社 | ブロック−グラフト共重合体およびこれを用いて作製した自己架橋型高分子固体電解質並びにその製造方法 |
JP3569612B2 (ja) | 1997-07-25 | 2004-09-22 | 信越化学工業株式会社 | ブロック−グラフト共重合体およびこれを用いて作製した自己架橋型高分子固体電解質ならびにその製造方法 |
CA2265345A1 (en) | 1998-03-25 | 1999-09-25 | The Lubrizol Corporation | Vinyl aromatic-(vinyl aromatic-co-acrylic) block copolymers prepared by stabilized free radical polymerization |
JP4132265B2 (ja) | 1998-08-04 | 2008-08-13 | 株式会社クラレ | ブロック共重合体およびその成形品 |
DE69942703D1 (de) | 1998-12-30 | 2010-10-07 | Lubrizol Advanced Mat Inc | Verzweigte blockcopolymere für die behandlung der oberfläche des keratins |
CA2352155A1 (en) | 1998-12-31 | 2000-07-13 | Ciba Specialty Chemicals Holding Inc. | Pigment composition containing atrp polymers |
JP4458213B2 (ja) | 1999-01-29 | 2010-04-28 | 信越化学工業株式会社 | 架橋型高分子固体電解質の製造方法 |
JP4288440B2 (ja) | 1999-01-29 | 2009-07-01 | 信越化学工業株式会社 | 架橋型高分子固体電解質の製造方法 |
JP2000300682A (ja) | 1999-04-23 | 2000-10-31 | Hisamitsu Pharmaceut Co Inc | イオントフォレーシス用デバイス |
JP2012036078A (ja) | 1999-06-07 | 2012-02-23 | Toshiba Corp | パターン形成方法 |
US6314225B1 (en) | 1999-11-23 | 2001-11-06 | Corning Incorporated | Halogen and perhalo-organo substituted N-phenyl (or biphenyl) maleimide |
JP2001294617A (ja) | 2000-04-12 | 2001-10-23 | Shin Etsu Chem Co Ltd | プロトン導電性高分子電解質 |
FR2809829B1 (fr) | 2000-06-05 | 2002-07-26 | Rhodia Chimie Sa | Nouvelle composition photosensible pour la fabrication de photoresist |
JP4625901B2 (ja) | 2000-11-08 | 2011-02-02 | 独立行政法人産業技術総合研究所 | シンジオタクチック芳香族ビニル系ブロック共重合体およびその製造方法 |
US6486257B1 (en) | 2001-04-10 | 2002-11-26 | University Of Akron | Block copolymers of lactone and lactam, compatabilizing agents, and compatibilized polymer blends |
KR100425243B1 (ko) | 2001-11-14 | 2004-03-30 | 주식회사 엘지화학 | 선형의 블록 공중합체의 제조방법 |
US20030143343A1 (en) | 2001-12-19 | 2003-07-31 | Fuji Photo Film Co., Ltd. | Wall-structured body and process for manufacturing the same |
US8362151B2 (en) | 2002-05-31 | 2013-01-29 | Elsicon, Inc. | Hybrid polymer materials for liquid crystal alignment layers |
JP2004026688A (ja) | 2002-06-24 | 2004-01-29 | Asahi Glass Co Ltd | ポリフルオロアルキル基含有重合性化合物およびその重合体 |
AU2003242731A1 (en) | 2002-07-01 | 2004-01-19 | Merck Patent Gmbh | Polymerizable, luminescent compounds and mixtures, luminescent polymer materials and their use |
ATE426639T1 (de) | 2002-07-03 | 2009-04-15 | Procter & Gamble | Strahlungshartbare elastomere materialien mit geringer spannungsrelaxation |
US7750059B2 (en) | 2002-12-04 | 2010-07-06 | Hewlett-Packard Development Company, L.P. | Polymer solution for nanoimprint lithography to reduce imprint temperature and pressure |
US8036960B2 (en) * | 2003-02-12 | 2011-10-11 | Emars, Inc. | System and method for coordinating the collection, analysis and storage of payroll information provided to government agencies by government contractors |
JP4147143B2 (ja) | 2003-04-28 | 2008-09-10 | 電気化学工業株式会社 | ブロック共重合体及び樹脂組成物 |
JP4300902B2 (ja) | 2003-06-23 | 2009-07-22 | コニカミノルタホールディングス株式会社 | ブロック共重合体、有機エレクトロルミネッセンス素子、表示装置、照明装置及び光源 |
JP2005097442A (ja) | 2003-09-25 | 2005-04-14 | Ube Ind Ltd | パターン表面とその製造方法 |
JP4453814B2 (ja) | 2003-11-12 | 2010-04-21 | Jsr株式会社 | 重合性化合物および混合物ならびに液晶表示素子の製造方法 |
US8061533B2 (en) * | 2004-03-19 | 2011-11-22 | University Of Tennessee Research Foundation | Materials comprising polydienes and hydrophilic polymers and related methods |
JP4604743B2 (ja) | 2005-02-01 | 2011-01-05 | セイコーエプソン株式会社 | 機能性基板の製造方法、機能性基板、微細パターンの形成方法、導電膜配線、電子光学装置および電子機器 |
US7341788B2 (en) | 2005-03-11 | 2008-03-11 | International Business Machines Corporation | Materials having predefined morphologies and methods of formation thereof |
JP2007070453A (ja) | 2005-09-06 | 2007-03-22 | Nippon Soda Co Ltd | ブロック共重合体の製造方法 |
JP5014605B2 (ja) | 2005-09-14 | 2012-08-29 | ライオン株式会社 | 易洗浄性皮膜形成用組成物 |
EP1950799B1 (en) | 2005-11-14 | 2012-04-18 | Tokyo Institute Of Technology | Method for production of nano-porous substrate |
US7538159B2 (en) | 2005-12-16 | 2009-05-26 | Bridgestone Corporation | Nanoparticles with controlled architecture and method thereof |
US20070166648A1 (en) | 2006-01-17 | 2007-07-19 | International Business Machines Corporation | Integrated lithography and etch for dual damascene structures |
JP2007246600A (ja) | 2006-03-14 | 2007-09-27 | Shin Etsu Chem Co Ltd | 自己組織化高分子膜材料、自己組織化パターン、及びパターン形成方法 |
JP5457027B2 (ja) | 2006-05-16 | 2014-04-02 | 日本曹達株式会社 | ブロックコポリマー |
JP5340530B2 (ja) | 2006-09-01 | 2013-11-13 | リンテック株式会社 | ミクロ相分離構造物の製造方法 |
WO2008051214A1 (en) | 2006-10-23 | 2008-05-02 | John Samuel Batchelder | Apparatus and method for measuring surface energies |
KR100810682B1 (ko) | 2006-11-08 | 2008-03-07 | 제일모직주식회사 | 전도성 고분자 중합체, 전도성 고분자 공중합체 조성물,전도성 고분자 공중합체 조성물막, 및 이를 이용한 유기광전 소자 |
JP2008150470A (ja) | 2006-12-15 | 2008-07-03 | Sumitomo Chemical Co Ltd | プロピレン系ブロック共重合体 |
US7964107B2 (en) | 2007-02-08 | 2011-06-21 | Micron Technology, Inc. | Methods using block copolymer self-assembly for sub-lithographic patterning |
JP5546719B2 (ja) | 2007-03-28 | 2014-07-09 | 日東電工株式会社 | ミクロ相分離構造を有する高分子体の製造方法ならびにミクロ相分離構造を有する高分子体 |
US8097175B2 (en) | 2008-10-28 | 2012-01-17 | Micron Technology, Inc. | Method for selectively permeating a self-assembled block copolymer, method for forming metal oxide structures, method for forming a metal oxide pattern, and method for patterning a semiconductor structure |
US8168213B2 (en) | 2007-05-15 | 2012-05-01 | Boston Scientific Scimed, Inc. | Medical devices having coating with improved adhesion |
JP5332052B2 (ja) * | 2007-06-01 | 2013-11-06 | シャープ株式会社 | レジスト除去方法、半導体製造方法、及びレジスト除去装置 |
US8147914B2 (en) * | 2007-06-12 | 2012-04-03 | Massachusetts Institute Of Technology | Orientation-controlled self-assembled nanolithography using a block copolymer |
US8714088B2 (en) | 2007-06-21 | 2014-05-06 | Fujifilm Corporation | Lithographic printing plate precursor and lithographic printing method |
WO2009008252A1 (ja) | 2007-07-06 | 2009-01-15 | Maruzen Petrochemical Co., Ltd. | Aba型トリブロック共重合体及びその製造方法 |
KR101291223B1 (ko) | 2007-08-09 | 2013-07-31 | 한국과학기술원 | 블록 공중합체를 이용한 미세 패턴 형성 방법 |
JP4403238B2 (ja) | 2007-09-03 | 2010-01-27 | 国立大学法人東京工業大学 | ミクロ相分離構造膜、及びその製造方法 |
JP5081560B2 (ja) | 2007-09-28 | 2012-11-28 | 富士フイルム株式会社 | ポジ型レジスト組成物およびこれを用いたパターン形成方法 |
CN101215362B (zh) | 2008-01-08 | 2010-08-25 | 厦门大学 | 一种具有低表面能的硅丙三嵌段共聚物及其制备方法 |
JP2009203439A (ja) | 2008-02-29 | 2009-09-10 | Mitsubishi Electric Corp | ブロック共重合体、ブロック共重合体組成物及びそれを含有する絶縁シート |
US8425982B2 (en) | 2008-03-21 | 2013-04-23 | Micron Technology, Inc. | Methods of improving long range order in self-assembly of block copolymer films with ionic liquids |
KR100935863B1 (ko) | 2008-07-02 | 2010-01-07 | 연세대학교 산학협력단 | 용매 어닐링과 디웨팅을 이용한 블록공중합체의 나노구조의패턴화방법 |
US8211737B2 (en) * | 2008-09-19 | 2012-07-03 | The University Of Massachusetts | Method of producing nanopatterned articles, and articles produced thereby |
US8518837B2 (en) | 2008-09-25 | 2013-08-27 | The University Of Massachusetts | Method of producing nanopatterned articles using surface-reconstructed block copolymer films |
US8658258B2 (en) * | 2008-10-21 | 2014-02-25 | Aculon, Inc. | Plasma treatment of substrates prior to the formation a self-assembled monolayer |
JP2010116466A (ja) | 2008-11-12 | 2010-05-27 | Nippon Oil Corp | ミクロ相分離構造膜、ナノ多孔質膜、およびそれらの製造方法 |
JP2010115832A (ja) | 2008-11-12 | 2010-05-27 | Panasonic Corp | ブロックコポリマーの自己組織化促進方法及びそれを用いたブロックコポリマーの自己組織化パターン形成方法 |
JP2010145158A (ja) | 2008-12-17 | 2010-07-01 | Dainippon Printing Co Ltd | ミクロ相分離構造の確認方法 |
EP2199854B1 (en) | 2008-12-19 | 2015-12-16 | Obducat AB | Hybrid polymer mold for nano-imprinting and method for making the same |
KR101212672B1 (ko) | 2008-12-26 | 2012-12-14 | 제일모직주식회사 | 전도성 고분자, 전도성 고분자 조성물, 전도성 고분자 유기막 및 이를 포함하는 유기발광소자 |
JP5399098B2 (ja) * | 2009-03-02 | 2014-01-29 | 東ソー株式会社 | ブロック共重合体及びその製造方法 |
CN101492520A (zh) | 2009-03-04 | 2009-07-29 | 中国科学院上海有机化学研究所 | 含有全氟环丁基芳基醚嵌段的两嵌段聚合物、制备方法及用途 |
JP5170456B2 (ja) | 2009-04-16 | 2013-03-27 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
KR101101767B1 (ko) | 2009-05-07 | 2012-01-05 | 한국과학기술원 | 코일―빗형 블록 공중합체 및 이를 이용한 나노 구조체의 제조방법 |
JP5679253B2 (ja) | 2009-05-26 | 2015-03-04 | 国立大学法人東京工業大学 | 自立性高分子薄膜 |
KR20110018678A (ko) | 2009-08-18 | 2011-02-24 | 연세대학교 산학협력단 | 기능성 말단기를 가진 폴리스티렌을 이용한 실린더 나노구조체의 수직배향 조절법 |
EP2330136B1 (en) | 2009-12-07 | 2013-08-28 | Borealis AG | Process for the preparation of an unsupported, solid metallocene catalyst system and its use in polymerization of olefins |
KR101305052B1 (ko) | 2010-02-25 | 2013-09-11 | 이화여자대학교 산학협력단 | 자기 조립 이중블록 공중합체와 졸-겔 공정을 이용한 산화아연 나노링 구조체의 제조방법 |
KR101238827B1 (ko) | 2010-03-12 | 2013-03-04 | 한국과학기술원 | 열안전성이 우수한 코어쉘 구조의 나노 입자 블록공중합체 복합체의 제조 방법 및 이에 의하여 제조된 열안전성이 우수한 코어쉘 구조의 나노 입자 블록공중합체 복합체 |
KR20110112501A (ko) | 2010-04-07 | 2011-10-13 | 한국과학기술원 | 높은 종횡비를 가지는 나노구조물 제조용 블록공중합체 및 그 제조방법 |
CN101837950B (zh) * | 2010-05-24 | 2012-09-05 | 山东大学 | 两嵌段共聚物直接组装纳米结构的装置和方法 |
JP5505371B2 (ja) | 2010-06-01 | 2014-05-28 | 信越化学工業株式会社 | 高分子化合物、化学増幅ポジ型レジスト材料、及びパターン形成方法 |
JP5598970B2 (ja) | 2010-06-18 | 2014-10-01 | 凸版印刷株式会社 | 微細構造体の製造方法、複合体 |
US8426691B2 (en) * | 2010-07-08 | 2013-04-23 | Monsanto Technology Llc | Soybean variety A1016011 |
KR101290057B1 (ko) | 2010-07-19 | 2013-07-26 | 주식회사 엘지화학 | 코팅성과 재코팅성이 우수한 열경화성 보호막 조성물 |
US8541162B2 (en) | 2010-09-01 | 2013-09-24 | E I Du Pont De Nemours And Company | High resolution, solvent resistant, thin elastomeric printing plates |
JP2012093699A (ja) | 2010-09-30 | 2012-05-17 | Canon Inc | エレクトロクロミック素子 |
JP5254381B2 (ja) | 2011-02-23 | 2013-08-07 | 株式会社東芝 | パターン形成方法 |
CN102172491B (zh) | 2011-03-09 | 2014-09-03 | 无锡市恒创嘉业纳米材料科技有限公司 | 一种含氟表面活性剂及其制备方法 |
US8760040B2 (en) | 2011-04-01 | 2014-06-24 | Korea Institute Of Science And Technology | Polymer blend composition and tunable actuators using the same |
CN103562245B (zh) | 2011-04-22 | 2015-11-25 | Lg化学株式会社 | 新的二嵌段共聚物、其制备方法以及使用其形成纳米图案的方法 |
US20130048488A1 (en) * | 2011-08-29 | 2013-02-28 | Miasole | Impermeable PVD Target Coating for Porous Target Materials |
TW201323461A (zh) | 2011-09-06 | 2013-06-16 | Univ Cornell | 嵌段共聚物及利用彼等之蝕印圖案化 |
WO2013040483A1 (en) | 2011-09-15 | 2013-03-21 | Wisconsin Alumni Research Foundation | Directed assembly of block copolymer films between a chemically patterned surface and a second surface |
US8691925B2 (en) | 2011-09-23 | 2014-04-08 | Az Electronic Materials (Luxembourg) S.A.R.L. | Compositions of neutral layer for directed self assembly block copolymers and processes thereof |
JP5795221B2 (ja) | 2011-09-26 | 2015-10-14 | 株式会社東芝 | パターン形成方法 |
EP2781550B1 (en) | 2011-11-09 | 2019-10-16 | JSR Corporation | Directed self-assembling composition for pattern formation, and pattern-forming method |
JP6019524B2 (ja) | 2011-12-09 | 2016-11-02 | 国立大学法人九州大学 | 生体適合性材料、医療用具及び生体適合性材料の製造方法 |
US8697810B2 (en) | 2012-02-10 | 2014-04-15 | Rohm And Haas Electronic Materials Llc | Block copolymer and methods relating thereto |
CN104114594B (zh) | 2012-02-10 | 2017-05-24 | 纳幕尔杜邦公司 | 高‑x两嵌段共聚物的制备、纯化和用途 |
US20130209755A1 (en) | 2012-02-15 | 2013-08-15 | Phillip Dene Hustad | Self-assembled structures, method of manufacture thereof and articles comprising the same |
JP6118573B2 (ja) | 2012-03-14 | 2017-04-19 | 東京応化工業株式会社 | 下地剤、ブロックコポリマーを含む層のパターン形成方法 |
JP2013219334A (ja) | 2012-03-16 | 2013-10-24 | Jx Nippon Oil & Energy Corp | フィルム状モールドを用いた基板の製造方法及び製造装置 |
KR101891761B1 (ko) | 2012-04-06 | 2018-08-24 | 주식회사 동진쎄미켐 | 가이드 패턴 형성용 포토레지스트 조성물 및 이를 이용한 미세패턴 형성방법 |
EP2839341B1 (en) | 2012-04-16 | 2020-01-15 | Brewer Science, Inc. | Method for directed self-assembly |
JP5710546B2 (ja) | 2012-04-27 | 2015-04-30 | 信越化学工業株式会社 | パターン形成方法 |
US9250528B2 (en) | 2012-04-27 | 2016-02-02 | Asml Netherlands B.V. | Methods and compositions for providing spaced lithography features on a substrate by self-assembly of block copolymers |
US9127113B2 (en) | 2012-05-16 | 2015-09-08 | Rohm And Haas Electronic Materials Llc | Polystyrene-polyacrylate block copolymers, methods of manufacture thereof and articles comprising the same |
JP2014012807A (ja) | 2012-06-05 | 2014-01-23 | Asahi Kasei E-Materials Corp | パターン形成用樹脂組成物及びパターン形成方法 |
KR101529646B1 (ko) | 2012-09-10 | 2015-06-17 | 주식회사 엘지화학 | 실리콘 옥사이드의 나노 패턴 형성 방법, 금속 나노 패턴의 형성 방법 및 이를 이용한 정보저장용 자기 기록 매체 |
JP5887244B2 (ja) * | 2012-09-28 | 2016-03-16 | 富士フイルム株式会社 | パターン形成用自己組織化組成物、それを用いたブロックコポリマーの自己組織化によるパターン形成方法、及び自己組織化パターン、並びに電子デバイスの製造方法 |
KR101490405B1 (ko) | 2012-10-19 | 2015-02-06 | 주식회사 엘지화학 | 금속 나노와이어 또는 금속 나노메쉬의 금속 나노구조체의 형성 방법 |
JP6088800B2 (ja) | 2012-11-07 | 2017-03-01 | 株式会社東芝 | パターン形成方法 |
US9223214B2 (en) * | 2012-11-19 | 2015-12-29 | The Texas A&M University System | Self-assembled structures, method of manufacture thereof and articles comprising the same |
CN102967918B (zh) | 2012-12-05 | 2014-12-31 | 河海大学常州校区 | 新型太阳能聚光碟片 |
WO2014090178A1 (en) | 2012-12-13 | 2014-06-19 | Toray Advanced Materials Research Laboratories (China) Co., Ltd. | Multi-block copolymer and polymer electrolyte |
WO2014124795A1 (en) * | 2013-02-14 | 2014-08-21 | Asml Netherlands B.V. | Methods for providing spaced lithography features on a substrate by self-assembly of block copolymers |
JP6467121B2 (ja) * | 2013-02-20 | 2019-02-06 | 東京応化工業株式会社 | 相分離構造を含む構造体の製造方法 |
JP6107216B2 (ja) | 2013-02-22 | 2017-04-05 | キヤノンマーケティングジャパン株式会社 | コンピュータ、薬剤分包装置、およびその制御方法とプログラム。 |
JP6027912B2 (ja) | 2013-02-22 | 2016-11-16 | 東京応化工業株式会社 | 相分離構造を含む構造体の製造方法、及びパターン形成方法、並びにトップコート材料 |
JP2015000896A (ja) | 2013-06-14 | 2015-01-05 | 富士フイルム株式会社 | 組成物ならびにそれを用いたミクロ相分離構造膜およびその製造方法 |
EP2883891A4 (en) | 2013-06-28 | 2016-06-01 | Lg Chemical Ltd | TERNARY ELASTOMER COPOLYMER WITH A DIEN AND METHOD FOR THE PRODUCTION THEREOF |
US9109067B2 (en) | 2013-09-24 | 2015-08-18 | Xerox Corporation | Blanket materials for indirect printing method with varying surface energies via amphiphilic block copolymers |
JP5764185B2 (ja) * | 2013-11-22 | 2015-08-12 | 株式会社Joled | El表示装置 |
US10160822B2 (en) | 2013-12-06 | 2018-12-25 | Lg Chem, Ltd. | Monomer and block copolymer |
WO2015084121A1 (ko) | 2013-12-06 | 2015-06-11 | 주식회사 엘지화학 | 블록 공중합체 |
EP3078690B1 (en) | 2013-12-06 | 2021-01-27 | LG Chem, Ltd. | Block copolymer |
JP6496318B2 (ja) | 2013-12-06 | 2019-04-03 | エルジー・ケム・リミテッド | ブロック共重合体 |
EP3101043B1 (en) | 2013-12-06 | 2021-01-27 | LG Chem, Ltd. | Block copolymer |
WO2015084131A1 (ko) | 2013-12-06 | 2015-06-11 | 주식회사 엘지화학 | 블록 공중합체 |
CN105960422B (zh) | 2013-12-06 | 2019-01-18 | 株式会社Lg化学 | 嵌段共聚物 |
JP6419820B2 (ja) | 2013-12-06 | 2018-11-07 | エルジー・ケム・リミテッド | ブロック共重合体 |
WO2015084123A1 (ko) | 2013-12-06 | 2015-06-11 | 주식회사 엘지화학 | 블록 공중합체 |
US10227438B2 (en) | 2013-12-06 | 2019-03-12 | Lg Chem, Ltd. | Block copolymer |
JP6334706B2 (ja) | 2013-12-06 | 2018-05-30 | エルジー・ケム・リミテッド | ブロック共重合体 |
US10239980B2 (en) | 2013-12-06 | 2019-03-26 | Lg Chem, Ltd. | Block copolymer |
TWI596125B (zh) | 2013-12-06 | 2017-08-21 | Lg化學股份有限公司 | 嵌段共聚物 |
US10081698B2 (en) | 2013-12-06 | 2018-09-25 | Lg Chem, Ltd. | Block copolymer |
FR3014888B1 (fr) | 2013-12-13 | 2017-05-26 | Arkema France | Procede permettant la creation de structures nanometriques par l'auto-assemblage de copolymeres a blocs |
KR20150114633A (ko) | 2014-04-01 | 2015-10-13 | 에스케이하이닉스 주식회사 | 반도체 장치 |
US10287430B2 (en) | 2014-09-30 | 2019-05-14 | Lg Chem, Ltd. | Method of manufacturing patterned substrate |
EP3214102B1 (en) | 2014-09-30 | 2022-01-05 | LG Chem, Ltd. | Block copolymer |
CN107075028B (zh) | 2014-09-30 | 2020-04-03 | 株式会社Lg化学 | 嵌段共聚物 |
EP3202798B1 (en) | 2014-09-30 | 2022-01-12 | LG Chem, Ltd. | Block copolymer |
WO2016052999A1 (ko) | 2014-09-30 | 2016-04-07 | 주식회사 엘지화학 | 블록 공중합체 |
JP6538159B2 (ja) | 2014-09-30 | 2019-07-03 | エルジー・ケム・リミテッド | ブロック共重合体 |
US10310378B2 (en) | 2014-09-30 | 2019-06-04 | Lg Chem, Ltd. | Block copolymer |
KR20160038701A (ko) | 2014-09-30 | 2016-04-07 | 주식회사 엘지화학 | 패턴화 기판의 제조 방법 |
CN107077066B9 (zh) | 2014-09-30 | 2021-05-14 | 株式会社Lg化学 | 制造图案化基底的方法 |
WO2016052994A1 (ko) | 2014-09-30 | 2016-04-07 | 주식회사 엘지화학 | 블록 공중합체 |
JP6538157B2 (ja) | 2014-09-30 | 2019-07-03 | エルジー・ケム・リミテッド | ブロック共重合体 |
CN107075054B (zh) | 2014-09-30 | 2020-05-05 | 株式会社Lg化学 | 嵌段共聚物 |
KR101946776B1 (ko) | 2015-06-04 | 2019-02-13 | 주식회사 엘지화학 | 중성층 조성물 |
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