JP5948065B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5948065B2 JP5948065B2 JP2012013334A JP2012013334A JP5948065B2 JP 5948065 B2 JP5948065 B2 JP 5948065B2 JP 2012013334 A JP2012013334 A JP 2012013334A JP 2012013334 A JP2012013334 A JP 2012013334A JP 5948065 B2 JP5948065 B2 JP 5948065B2
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- transistor
- layer
- region
- semiconductor layer
- oxide semiconductor
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Classifications
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
- H01L21/441—Deposition of conductive or insulating materials for electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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- Thin Film Transistor (AREA)
- Semiconductor Memories (AREA)
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Description
本実施の形態では、開示する発明の一態様に係る半導体装置の構成およびその作製方法について、図面を参照して説明する。
図1及び図2に半導体装置の構成例を示す。
以下、図3及び図4を用いて、本実施の形態に係るトランジスタの作製工程の例について説明する。
図1に示すトランジスタ160の作製方法の例について、図3を参照して説明する。
図2に示すトランジスタ162の作製工程の例について、図4を参照して説明する。なお、トランジスタ162の作製工程は、多くの部分でトランジスタ160と共通している。したがって、以下においては、重複する部分の説明は省略することがある。
本実施の形態では、半導体装置の一例として、記憶媒体(メモリ素子)を示す。本実施の形態では、実施の形態1で示す酸化物半導体を用いたトランジスタと、酸化物半導体以外の材料を用いたトランジスタとを同一基板上に形成する。
本実施の形態では、開示する発明の一態様に係る半導体装置の応用例について、図7を参照して説明する。ここでは、中央演算処理装置(CPU)について説明する。
本実施の形態では、開示する発明の一態様に係る半導体装置の応用例について、図8を参照して説明する。ここでは、対象物の情報を読み取るイメージセンサ機能を有する半導体装置の一例について説明する。なお、回路図においては、酸化物半導体を用いたトランジスタであることを示すために、OSの符号を併せて付す場合がある。
本実施の形態では、上述の実施の形態で説明した半導体装置を電子機器に適用する場合について、図9を用いて説明する。本実施の形態では、コンピュータ、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯情報端末(携帯型ゲーム機、音響再生装置なども含む)、デジタルカメラ、デジタルビデオカメラ、電子ペーパー、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)などの電子機器に、上述の半導体装置を適用する場合について説明する。
106 素子分離絶縁層
108 ゲート絶縁層
109 ゲート電極
116 チャネル形成領域
118 不純物領域
124 金属化合物領域
126 電極
128 絶縁層
140 導電層
141 導電層
142a ソース電極
142b ドレイン電極
144 酸化物半導体層
145a 突出部
145b 突出部
146 ゲート絶縁層
147 突出部
148 ゲート電極
149 ゲート電極
150 絶縁層
150a レジストマスク
150b レジストマスク
152a レジストマスク
152b レジストマスク
154 配線
156 絶縁層
158 導電層
160 トランジスタ
162 トランジスタ
164 容量素子
170 トランジスタ
172 トランジスタ
260 トランジスタ
301 基板
400 ガラス基板
402 酸化シリコン層
404 酸化物半導体層
406 タングステン層
408 タングステン層
410 レジストマスク
412 レジストマスク
414 タングステン層
415 突出部
416 タングステン層
601 筐体
602 筐体
603 表示部
604 キーボード
611 本体
612 スタイラス
613 表示部
614 操作ボタン
615 外部インターフェイス
620 電子書籍
621 筐体
623 筐体
625 表示部
627 表示部
631 電源
633 操作キー
635 スピーカー
637 軸部
640 筐体
641 筐体
642 表示パネル
643 スピーカー
644 マイクロフォン
645 操作キー
646 ポインティングデバイス
647 カメラ用レンズ
648 外部接続端子
649 太陽電池セル
650 外部メモリスロット
661 本体
663 接眼部
664 操作スイッチ
665 表示部
666 バッテリー
667 表示部
670 テレビジョン装置
671 筐体
673 表示部
675 スタンド
680 リモコン操作機
1101 CPU
1102 タイミングコントロール回路
1103 命令解析デコーダー
1104 レジスタアレイ
1105 アドレスロジックバッファ回路
1106 データバスインターフェイス
1107 ALU
1108 命令レジスタ
1202 フォトダイオード
1204 トランジスタ
1206 トランジスタ
1212 フォトダイオードリセット信号線
1214 ゲート信号線
1216 フォトセンサ出力信号線
1218 フォトセンサ基準信号線
1222 基板
1224 基板
1226a 半導体層
1226b 半導体層
1226c 半導体層
1228 接着層
1230 入射光
1234 絶縁層
1236 層間絶縁層
1238 層間絶縁層
1240 ゲート電極
1242 電極層
1244 電極層
Claims (4)
- チャネル形成領域を有する半導体層と、
前記半導体層と接する領域を有し、単層構造を有するソース電極と、
前記半導体層と接する領域を有し、単層構造を有するドレイン電極と、
前記ソース電極及び前記ドレイン電極上に位置し、且つ、前記チャネル形成領域と接する領域を有するゲート絶縁層と、
前記ゲート絶縁層を介して、前記チャネル形成領域と重畳する領域を有するゲート電極と、を有し、
前記チャネル形成領域のチャネル長は2μm未満であり、
前記ソース電極は、第1の膜厚を有する第1の領域と、前記第1の膜厚よりも大きい第2の膜厚を有する第2の領域とを有し、且つ、前記第1の領域は、前記第2の領域の外側に位置し、
前記ドレイン電極は、第3の膜厚を有する第3の領域と、前記第3の膜厚よりも大きい第4の膜厚を有する第4の領域とを有し、且つ、前記第3の領域は、前記第4の領域の外側に位置し、
前記第1の領域は、テーパ形状を有し、
前記第3の領域は、テーパ形状を有し、
前記ゲート絶縁層は、前記第1の領域において、前記ソース電極の上面及び側面と接する領域を有し、
前記ゲート絶縁層は、前記第3の領域において、前記ドレイン電極の上面及び側面と接する領域を有することを特徴とする半導体装置。 - 請求項1において、
前記半導体層は、前記第1の領域において、前記ソース電極と接する領域を有し、
前記半導体層は、前記第3の領域において、前記ドレイン電極と接する領域を有することを特徴とする半導体装置。 - 請求項1又は2において、
前記第1の領域と、前記第3の領域と、は互いに同じ幅及び同じ膜厚を有することを特徴とする半導体装置。 - 請求項1乃至3のいずれか一において、
前記半導体層として、酸化物半導体層を有することを特徴とする半導体装置。
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JP2017171784A Withdrawn JP2018011072A (ja) | 2011-01-28 | 2017-09-07 | 表示装置 |
JP2020001171A Active JP7026149B2 (ja) | 2011-01-28 | 2020-01-08 | 半導体装置 |
JP2022020169A Active JP7293424B2 (ja) | 2011-01-28 | 2022-02-14 | 半導体装置 |
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JP2020001171A Active JP7026149B2 (ja) | 2011-01-28 | 2020-01-08 | 半導体装置 |
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JP2023093925A Pending JP2023111970A (ja) | 2011-01-28 | 2023-06-07 | 半導体装置 |
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JP5698923B2 (ja) * | 2009-06-26 | 2015-04-08 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | 自己整合型スペーサー多重パターニング方法 |
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KR101830195B1 (ko) * | 2009-12-18 | 2018-02-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치와 그것의 제작 방법 |
JP2011138934A (ja) | 2009-12-28 | 2011-07-14 | Sony Corp | 薄膜トランジスタ、表示装置および電子機器 |
JP2011187506A (ja) | 2010-03-04 | 2011-09-22 | Sony Corp | 薄膜トランジスタおよびその製造方法、並びに表示装置 |
JP2012160679A (ja) | 2011-02-03 | 2012-08-23 | Sony Corp | 薄膜トランジスタ、表示装置および電子機器 |
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KR20200051069A (ko) | 2020-05-12 |
KR102233959B1 (ko) | 2021-03-29 |
TWI573196B (zh) | 2017-03-01 |
JP7026149B2 (ja) | 2022-02-25 |
JP6232104B2 (ja) | 2017-11-15 |
KR101984218B1 (ko) | 2019-05-30 |
US20120193625A1 (en) | 2012-08-02 |
JP7293424B2 (ja) | 2023-06-19 |
JP2012169610A (ja) | 2012-09-06 |
US9299815B2 (en) | 2016-03-29 |
KR20140006896A (ko) | 2014-01-16 |
JP2018011072A (ja) | 2018-01-18 |
KR20190058722A (ko) | 2019-05-29 |
JP2022060338A (ja) | 2022-04-14 |
JP2016181713A (ja) | 2016-10-13 |
DE112012000601T5 (de) | 2014-01-30 |
KR20210034703A (ko) | 2021-03-30 |
KR102111015B1 (ko) | 2020-05-14 |
TW201236085A (en) | 2012-09-01 |
JP2020065074A (ja) | 2020-04-23 |
WO2012102314A1 (en) | 2012-08-02 |
US8987727B2 (en) | 2015-03-24 |
JP2023111970A (ja) | 2023-08-10 |
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