JP5871387B2 - プログラマブルロジックデバイス - Google Patents

プログラマブルロジックデバイス Download PDF

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Publication number
JP5871387B2
JP5871387B2 JP2012111152A JP2012111152A JP5871387B2 JP 5871387 B2 JP5871387 B2 JP 5871387B2 JP 2012111152 A JP2012111152 A JP 2012111152A JP 2012111152 A JP2012111152 A JP 2012111152A JP 5871387 B2 JP5871387 B2 JP 5871387B2
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Japan
Prior art keywords
transistor
region
film
oxide semiconductor
oxide
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JP2012111152A
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Japanese (ja)
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JP2012257216A5 (enExample
JP2012257216A (ja
Inventor
誠一 米田
誠一 米田
辰司 西島
辰司 西島
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2012111152A priority Critical patent/JP5871387B2/ja
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Publication of JP2012257216A5 publication Critical patent/JP2012257216A5/ja
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
    • H03K19/177—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components arranged in matrix form
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008—Arrangements for reducing power consumption
    • H03K19/0013—Arrangements for reducing power consumption in field effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008—Arrangements for reducing power consumption
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
    • H03K19/177—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components arranged in matrix form
    • H03K19/17736—Structural details of routing resources
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
    • H03K19/177—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components arranged in matrix form
    • H03K19/17736—Structural details of routing resources
    • H03K19/17744—Structural details of routing resources for input/output signals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
JP2012111152A 2011-05-19 2012-05-15 プログラマブルロジックデバイス Active JP5871387B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012111152A JP5871387B2 (ja) 2011-05-19 2012-05-15 プログラマブルロジックデバイス

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011112045 2011-05-19
JP2011112045 2011-05-19
JP2012111152A JP5871387B2 (ja) 2011-05-19 2012-05-15 プログラマブルロジックデバイス

Related Child Applications (1)

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JP2016001479A Division JP6006891B2 (ja) 2011-05-19 2016-01-07 プログラマブルロジックデバイス

Publications (3)

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JP2012257216A JP2012257216A (ja) 2012-12-27
JP2012257216A5 JP2012257216A5 (enExample) 2015-04-09
JP5871387B2 true JP5871387B2 (ja) 2016-03-01

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Family Applications (4)

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JP2012111152A Active JP5871387B2 (ja) 2011-05-19 2012-05-15 プログラマブルロジックデバイス
JP2016001479A Expired - Fee Related JP6006891B2 (ja) 2011-05-19 2016-01-07 プログラマブルロジックデバイス
JP2016176761A Expired - Fee Related JP6177978B2 (ja) 2011-05-19 2016-09-09 プログラマブルロジックデバイス
JP2017135929A Withdrawn JP2017212742A (ja) 2011-05-19 2017-07-12 半導体装置

Family Applications After (3)

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JP2016001479A Expired - Fee Related JP6006891B2 (ja) 2011-05-19 2016-01-07 プログラマブルロジックデバイス
JP2016176761A Expired - Fee Related JP6177978B2 (ja) 2011-05-19 2016-09-09 プログラマブルロジックデバイス
JP2017135929A Withdrawn JP2017212742A (ja) 2011-05-19 2017-07-12 半導体装置

Country Status (7)

Country Link
US (3) US8581625B2 (enExample)
JP (4) JP5871387B2 (enExample)
KR (2) KR101900348B1 (enExample)
CN (1) CN103563254A (enExample)
DE (1) DE112012002760T5 (enExample)
TW (1) TWI615972B (enExample)
WO (1) WO2012157593A1 (enExample)

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DE112012002760T5 (de) 2014-04-17
JP6177978B2 (ja) 2017-08-09
JP2017212742A (ja) 2017-11-30
US8581625B2 (en) 2013-11-12
KR20140049096A (ko) 2014-04-24
US9595964B2 (en) 2017-03-14
JP2016054561A (ja) 2016-04-14
US20170179955A1 (en) 2017-06-22
JP6006891B2 (ja) 2016-10-12
JP2012257216A (ja) 2012-12-27
JP2017017743A (ja) 2017-01-19
KR20140040159A (ko) 2014-04-02
TWI615972B (zh) 2018-02-21
US20120293206A1 (en) 2012-11-22
WO2012157593A1 (en) 2012-11-22
KR101466885B1 (ko) 2014-12-03
US20140015566A1 (en) 2014-01-16
US9900007B2 (en) 2018-02-20

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