JP5721084B2 - マイクロエレクトロニクス用の加工物を処理するための装置 - Google Patents
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Description
b)障壁板の外側周辺部、前記加工物の支持部材の上に配置されて該支持部材を覆う前記障壁板の内側表面、該内側表面に対向配置される外側表面、及び、前記内側表面と前記外側表面との間に処理流体の連通を与えるとともに、該処理流体が前記障壁板を通って流れ、前記加工物の支持部材に向かって導かれる通路を形成する内側周辺表面を含み、前記加工物の支持部材の支持表面と前記内側表面が、当該両表面の間に制御された流体の流路を提供し、かつ、該流路が、前記内側表面と前記加工物の支持部材に対して流体を放射状かつ外側方向に流すための流路外周縁部を有する前記障壁板と、
c)複数の入れ子化されたバッフルとを含み、
少なくとも一つの入れ子化されたバッフルは、一つの又はそれ以上の他の入れ子化されたバッフルに対して別個独立して移動可能とされており、その結果、前記少なくとも一つの、別個独立して移動可能な入れ子化されたバッフルに関連する少なくとも一つの排気ダクト通路を選択的に開閉するようにされており、
少なくとも一つの関連した前記排気ダクト通路を閉鎖するために、少なくとも一つの入れ子化された前記バッフルを独立に移動して、関連した前記排気ダクト通路によって占有された容積を減少させ、
少なくとも一つの関連した前記排気ダクト通路を開放するために、少なくとも一つの入れ子化された前記バッフルを独立に移動して、少なくとも1つの関連した前記排気ダクト通路によって占有される容積を増加させ、
少なくとも二つの入れ子化されたバッフルの各々は、前記障壁板の前記外側周辺部に対して放射状に隣接して位置決めされる内側周辺部を有する流量制御表面を備えて、前記流路外周縁部から流体の流れを受け入れており、その結果、
選択されかつ入れ子化されたバッフルの前記流量制御表面は、前記流路外周縁部から前記選択されかつ入れ子化されたバッフルに関連した1つの開いた排気ダクト通路内に流体の流れを導くことを特徴としている。
94,136 支持部材
174,218,262 バッフル
180,224,268 流量制御表面
182,226,270 内側周辺部
330,338,346 排気ダクト通路
503 プロセス処理チャンバー
556 障壁板
560 内側表面
566 外側周辺部
576 流路
Claims (6)
- マイクロエレクトロニクス用の加工物をプロセス処理するための装置であって、
a) プロセス処理チャンバー内に位置決めされる加工物の支持部材を含み、かつ、該支持部材の上に加工物が当該処理中に位置決めされるプロセス処理チャンバーと、
b) i) 障壁板の外側周辺部、ii) 前記加工物の支持部材の上に配置されて該支持部材を覆う前記障壁板の内側表面、iii) 該内側表面に対向配置される外側表面、及び、iv) 前記内側表面と前記外側表面との間に処理流体の連通を与えるとともに、該処理流体が前記障壁板を通って流れ、前記加工物の支持部材に向かって前記加工物の中央部から外方向への流れを促進する中央通路を形成する内側周辺部を含み、
前記加工物の支持部材の支持表面と前記内側表面が、当該両表面の間に制御された流体の流路を提供し、前記流路は、流路外周縁部を有し、かつ前記加工物の支持部材の中央部から前記加工物の支持部材の外側周辺部の方に向けて放射状に先細り、前記流体が前記障壁板の内側表面と前記加工物の支持部材に対して放射状かつ外側方向に流れる、前記障壁板と、
c) 複数の入れ子化されたバッフルとを含み、
少なくとも一つの入れ子化されたバッフルは、一つの又はそれ以上の他の入れ子化されたバッフルに対して別個独立して移動可能とされており、その結果、前記少なくとも一つの、別個独立して移動可能な入れ子化されたバッフルに関連する少なくとも一つの排気ダクト通路を選択的に開閉するようにされており、
少なくとも一つの関連した前記排気ダクト通路を閉鎖するために、少なくとも一つの入れ子化された前記バッフルを独立に移動して、関連した前記排気ダクト通路によって占有された容積を減少させ、
少なくとも一つの関連した前記排気ダクト通路を開放するために、少なくとも一つの入れ子化された前記バッフルを独立に移動して、少なくとも1つの関連した前記排気ダクト通路によって占有される容積を増加させ、
少なくとも二つの入れ子化されたバッフルの各々は、前記障壁板の内側表面の前記外側周辺部に対して放射状に隣接して位置決めされる内側周辺部を有する流量制御表面を備えることを特徴とする装置。 - 少なくとも二つの入れ子化されたバッフルの各々は、前記障壁板の内側表面の前記外側周辺部に対して放射状に隣接して位置決めされる内側周辺部を有する流量制御表面を備えて、前記流路外周縁部から流体の流れを受け入れており、その結果、選択されかつ入れ子化された前記バッフルの前記流量制御表面は、前記流路外周縁部から前記選択されかつ入れ子化されたバッフルに関連した1つの開いた排気ダクト通路内に流体の流れを導くことを特徴とする請求項1記載の装置。
- 前記障壁板は、さらに、
a) 1つまたはそれ以上の処理材料を前記プロセス処理チャンバーの中にかつ前記加工物の支持部材に向けて分配するため、前記障壁板内に統合された複数のノズルと、
b) 前記1つまたはそれ以上の処理材料が前記複数のノズルに供給される、前記障壁板内に設けた1つまたは複数の処理材料を供給する導管と、を含んでいることを特徴とする請求項2記載の装置。 - 前記障壁板は、さらに、複数の通路を形成する複数の内側周辺表面を含み、前記各々の通路は、外側表面と内側表面の間に処理流体の連通を与え、かつ、前記処理流体は、前記通路を通って前記障壁板を介して流れて前記加工物の支持部材に向けて導かれることを特徴とする請求項2記載の装置。
- 前記障壁板は、さらに、アーム構造体を含み、該アーム構造体は、
a) 複数の通路の一部を形成する複数の表面と、
b) 1つまたはそれ以上の処理材料を前記プロセス処理チャンバーの中にかつ前記加工物の支持部材に向けて分配するため、前記アーム構造体に統合された複数のノズルと、
c) 前記1つまたはそれ以上の処理材料が前記複数のノズルに供給される、前記アーム構造体内に設けた1つまたは複数の処理材料を供給する導管と、を含んでいることを特徴とする請求項4記載の装置。 - 前記障壁板が、第1の位置と第2の位置を含む移動範囲で制御可能に移動でき、前記第1の位置において、前記プロセス処理チャンバーが、十分に開口して、前記加工物を前記プロセス処理チャンバーに入出可能にし、前記第2の位置において、前記障壁板が、前記加工物の主要表面上を流れる少なくとも一つの材料を導くようにされている請求項2の装置。
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US66726305P | 2005-04-01 | 2005-04-01 | |
US66736905P | 2005-04-01 | 2005-04-01 | |
US60/667,369 | 2005-04-01 | ||
US60/667,263 | 2005-04-01 |
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JP2008504103A Division JP5333732B2 (ja) | 2005-04-01 | 2006-03-15 | マイクロエレクトロニクス用の加工物をプロセス処理するための装置 |
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JP5721084B2 true JP5721084B2 (ja) | 2015-05-20 |
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JP2008504103A Expired - Fee Related JP5333732B2 (ja) | 2005-04-01 | 2006-03-15 | マイクロエレクトロニクス用の加工物をプロセス処理するための装置 |
JP2008504102A Active JP4692785B2 (ja) | 2005-04-01 | 2006-03-15 | 一つ又はそれ以上の処理流体を用いた、半導体ウエハー又は他のマイクロエレクトロニクス用の基板に使用されるツール用の移動かつ入れ子化できる、コンパクトなダクトシステム |
JP2011142003A Active JP5257637B2 (ja) | 2005-04-01 | 2011-06-27 | マイクロエレクトロニクス用の加工物に使用されるツールの障壁構造体 |
JP2013000616A Active JP5721084B2 (ja) | 2005-04-01 | 2013-01-07 | マイクロエレクトロニクス用の加工物を処理するための装置 |
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JP2008504102A Active JP4692785B2 (ja) | 2005-04-01 | 2006-03-15 | 一つ又はそれ以上の処理流体を用いた、半導体ウエハー又は他のマイクロエレクトロニクス用の基板に使用されるツール用の移動かつ入れ子化できる、コンパクトなダクトシステム |
JP2011142003A Active JP5257637B2 (ja) | 2005-04-01 | 2011-06-27 | マイクロエレクトロニクス用の加工物に使用されるツールの障壁構造体 |
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US (5) | US8544483B2 (ja) |
JP (4) | JP5333732B2 (ja) |
KR (3) | KR100993311B1 (ja) |
TW (2) | TWI343285B (ja) |
WO (2) | WO2006107550A2 (ja) |
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WO2006107550A2 (en) | 2005-04-01 | 2006-10-12 | Fsi International, Inc. | Barrier structure and nozzle device for use in tools used to process microelectronic workpieces with one or more treatment fluids |
US8387635B2 (en) | 2006-07-07 | 2013-03-05 | Tel Fsi, Inc. | Barrier structure and nozzle device for use in tools used to process microelectronic workpieces with one or more treatment fluids |
WO2009020524A1 (en) * | 2007-08-07 | 2009-02-12 | Fsi International, Inc. | Rinsing methodologies for barrier plate and venturi containment systems in tools used to process microelectronic workpieces with one or more treatment fluids, and related apparatuses |
US7955440B2 (en) * | 2007-12-07 | 2011-06-07 | Sumco Corporation | Method for cleaning silicon wafer and apparatus for cleaning the silicon wafer |
KR20110005699A (ko) | 2008-05-09 | 2011-01-18 | 에프에스아이 인터내쇼날 인크. | 개방 동작 모드와 폐쇄 동작 모드사이를 용이하게 변경하는 처리실 설계를 이용하여 마이크로일렉트로닉 워크피이스를 처리하는 공구 및 방법 |
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US20070245954A1 (en) | 2007-10-25 |
KR20070122473A (ko) | 2007-12-31 |
TW200704869A (en) | 2007-02-01 |
US7681581B2 (en) | 2010-03-23 |
US8544483B2 (en) | 2013-10-01 |
US8899248B2 (en) | 2014-12-02 |
US20070022948A1 (en) | 2007-02-01 |
JP2013062548A (ja) | 2013-04-04 |
JP2011258960A (ja) | 2011-12-22 |
US20080271763A1 (en) | 2008-11-06 |
TW200704868A (en) | 2007-02-01 |
US20150075569A1 (en) | 2015-03-19 |
JP4692785B2 (ja) | 2011-06-01 |
US8656936B2 (en) | 2014-02-25 |
TWI343285B (en) | 2011-06-11 |
JP2008535253A (ja) | 2008-08-28 |
US20110308647A1 (en) | 2011-12-22 |
WO2006107549A1 (en) | 2006-10-12 |
WO2006107550A3 (en) | 2007-02-22 |
JP5333732B2 (ja) | 2013-11-06 |
KR101316769B1 (ko) | 2013-10-15 |
KR20120125388A (ko) | 2012-11-14 |
TWI361855B (en) | 2012-04-11 |
KR101255048B1 (ko) | 2013-04-16 |
WO2006107550A2 (en) | 2006-10-12 |
KR20070122466A (ko) | 2007-12-31 |
KR100993311B1 (ko) | 2010-11-09 |
JP5257637B2 (ja) | 2013-08-07 |
JP2008535252A (ja) | 2008-08-28 |
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