JP5718809B2 - 加工品の破壊を防止する方法および装置 - Google Patents

加工品の破壊を防止する方法および装置 Download PDF

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JP5718809B2
JP5718809B2 JP2011508781A JP2011508781A JP5718809B2 JP 5718809 B2 JP5718809 B2 JP 5718809B2 JP 2011508781 A JP2011508781 A JP 2011508781A JP 2011508781 A JP2011508781 A JP 2011508781A JP 5718809 B2 JP5718809 B2 JP 5718809B2
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Prior art keywords
wafer
deformation
measurement
heat treatment
processor circuit
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JP2011522400A5 (enExample
JP2011522400A (ja
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カム、デーヴィッド、マルコム
シブレ、ジョセフ
スチュアート、グレッグ
マッコイ、スティーブ
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マトソン テクノロジー、インコーポレイテッド
マトソン テクノロジー、インコーポレイテッド
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • C—CHEMISTRY; METALLURGY
    • C21—METALLURGY OF IRON
    • C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
    • C21D11/00—Process control or regulation for heat treatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Thermal Sciences (AREA)
  • Toxicology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Recrystallisation Techniques (AREA)
JP2011508781A 2008-05-16 2009-05-15 加工品の破壊を防止する方法および装置 Active JP5718809B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US7176408P 2008-05-16 2008-05-16
US61/071,764 2008-05-16
PCT/CA2009/000681 WO2009137940A1 (en) 2008-05-16 2009-05-15 Workpiece breakage prevention method and apparatus

Publications (3)

Publication Number Publication Date
JP2011522400A JP2011522400A (ja) 2011-07-28
JP2011522400A5 JP2011522400A5 (enExample) 2012-07-05
JP5718809B2 true JP5718809B2 (ja) 2015-05-13

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JP2011508781A Active JP5718809B2 (ja) 2008-05-16 2009-05-15 加工品の破壊を防止する方法および装置

Country Status (5)

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US (1) US9070590B2 (enExample)
JP (1) JP5718809B2 (enExample)
KR (1) KR101610269B1 (enExample)
CN (1) CN102089873A (enExample)
WO (1) WO2009137940A1 (enExample)

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CN103074479A (zh) * 2011-10-25 2013-05-01 昆山鑫昌泰模具科技有限公司 热处理工件校正处理方法
KR101829676B1 (ko) * 2011-12-29 2018-02-20 삼성전자주식회사 웨이퍼 열 처리 방법
CN102931117A (zh) * 2012-11-21 2013-02-13 苏州矽科信息科技有限公司 利用光反射原理测量晶圆传输中变形量的方法
FR3002768B1 (fr) * 2013-03-01 2015-02-20 Saint Gobain Procede de traitement thermique d'un revetement
CN103627886B (zh) * 2013-12-16 2015-12-16 浙江大学 用于消除残余应力的电流脉冲控制系统
CN106455986B (zh) 2014-02-27 2020-06-19 直观外科手术操作公司 用于镜面反射检测和减少的系统和方法
KR102446726B1 (ko) 2015-09-11 2022-09-26 삼성전자주식회사 투명 플레이트 및 그를 포함하는 기판 처리 장치
FR3042492B1 (fr) * 2015-10-16 2018-01-19 Saint-Gobain Glass France Procede de recuit rapide d'un empilement de couches minces contenant une surcouche a base d'indium
US10359334B2 (en) * 2015-12-30 2019-07-23 Mattson Technology, Inc. Fluid leakage detection for a millisecond anneal system
US10734262B2 (en) 2015-12-30 2020-08-04 Mattson Technology, Inc. Substrate support in a millisecond anneal system
KR101800273B1 (ko) * 2016-01-13 2017-11-22 에스케이실트론 주식회사 웨이퍼 분석 방법
KR102618813B1 (ko) * 2016-01-27 2023-12-27 삼성전자주식회사 공정 챔버 모니터링 장치
JP6658051B2 (ja) * 2016-02-16 2020-03-04 三菱電機株式会社 ウエハの検査装置、ウエハの検査方法および半導体装置の製造方法
FR3066816B1 (fr) * 2017-05-24 2020-09-04 Centre Nat Rech Scient Dispositif optique de mesure de la courbure d'une surface reflechissante
FI127730B (en) * 2017-10-06 2019-01-15 Oy Mapvision Ltd Measurement system with heat measurement
US10337852B1 (en) 2017-12-18 2019-07-02 Kla-Tencor Corporation Method for measuring positions of structures on a substrate and computer program product for determining positions of structures on a substrate
JP2021522676A (ja) * 2018-05-04 2021-08-30 ザ ガバメント オブ ザ ユナイテッド ステイツ オブ アメリカ， アズ リプレゼンテッド バイ ザ セクレタリー オブ ザ ネイビー ワイドバンドギャップ半導体エレクトロニクスのための注入ドーパント活性化
JP7364597B2 (ja) * 2018-05-07 2023-10-18 アプライド マテリアルズ インコーポレイテッド 基板の変形の検出と修正
JP6975687B2 (ja) * 2018-06-20 2021-12-01 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
FR3128018B1 (fr) * 2021-10-11 2023-10-27 Riber Instrument et procédé de mesure de courbure d’une surface d’un échantillon
JP7726838B2 (ja) * 2022-04-12 2025-08-20 株式会社Ｓｃｒｅｅｎホールディングス 温度測定方法および熱処理システム

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US20110177624A1 (en) 2011-07-21
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US9070590B2 (en) 2015-06-30
JP2011522400A (ja) 2011-07-28
KR101610269B1 (ko) 2016-04-07

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