JP5406871B2 - 窒化物半導体構造の製造方法および発光ダイオード - Google Patents
窒化物半導体構造の製造方法および発光ダイオード Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 200
- 150000004767 nitrides Chemical class 0.000 title claims description 196
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 239000000758 substrate Substances 0.000 claims description 265
- 238000000034 method Methods 0.000 claims description 66
- 239000000463 material Substances 0.000 claims description 20
- 229910052594 sapphire Inorganic materials 0.000 description 116
- 239000010980 sapphire Substances 0.000 description 116
- 239000013078 crystal Substances 0.000 description 74
- 239000007789 gas Substances 0.000 description 44
- 239000012535 impurity Substances 0.000 description 24
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 18
- 230000008569 process Effects 0.000 description 16
- 238000003776 cleavage reaction Methods 0.000 description 15
- 230000000694 effects Effects 0.000 description 15
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 15
- 230000007017 scission Effects 0.000 description 15
- 229910004298 SiO 2 Inorganic materials 0.000 description 13
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 13
- 229910020068 MgAl Inorganic materials 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 8
- 125000004429 atom Chemical group 0.000 description 7
- 238000012986 modification Methods 0.000 description 7
- 230000004048 modification Effects 0.000 description 7
- 238000005424 photoluminescence Methods 0.000 description 7
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 6
- 230000010355 oscillation Effects 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 230000002265 prevention Effects 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000011029 spinel Substances 0.000 description 2
- 229910052596 spinel Inorganic materials 0.000 description 2
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical group [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001093 holography Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004439 roughness measurement Methods 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L21/02428—Structure
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02647—Lateral overgrowth
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- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Led Devices (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Semiconductor Lasers (AREA)
Description
従って、溝を6H−SiC基板(0001)面に関して[2−1−10]方向に、あるいは[01−10]方向に沿って形成する。前者の溝部の方向は6H−SiC基板(0001)面の劈開面である{1−100}面を含んでおり、後者のそれは6H−SiC基板(0001)面上に結晶成長したGaNのラテラル成長に対して垂直である。これらの方向の片方を、または両方を6H−SiC基板(0001)面上に形成し、これを加工構造基板とする。
。
110 溝部
111、112、115 溝
113 凹凸部
114 凸部
116 空洞部
120 GaNバッファ層
121 n型GaN膜
122 GaN膜
123 凸部上の窒化物半導体膜
124 溝上の窒化物半導体膜
125 窒化物半導体
200、300 窒化物半導体構造
201 Siドープn型GaN層
202 Siドープn型AlGaN層
203 Siドープn型GaN層
204 n型InGaN/InGaN多重量子井戸層
205 p型AlGaN蒸発防止層
206 Mgドープp型GaN層
207 Mgドープp型Al0.1Ga0.9N層
208 Mgドープp型GaN層
209、305 負電極
210、306 正電極
301 第1のn型GaN層
302 第2のn型単一量子井戸InGaN層
303 p型AlGaN蒸発防止層
304 第3のp型GaNコンタクト層
400 サファイア基板
401 GaNバッファ層
402 GaN層
403 溝
404 空洞部
405 GaN膜
500 サファイア基板
501 低温GaNバッファ層
502 GaN層
503、504 空洞部
505 GaN膜
506 多結晶GaN
Claims (3)
- 第1の基板、第1の窒化物半導体膜及び第2の窒化物半導体膜を備えた窒化物半導体発光ダイオードにおいて、
前記第1の基板は、前記第1の窒化物半導体膜とは異なる材料からなり、
前記第1の窒化物半導体膜は前記第1の基板上に成長され、
前記第1の窒化物半導体膜上面は、凹部及び凸部が同一材料で形成されており、
前記第2の窒化物半導体膜は、窒化物半導体からなる活性層を含み、前記第1の窒化物半導体膜上面の前記凹部及び凸部上に成長されたものであり、
前記凹部は溝であり、該溝の方向は、前記第1の基板に対して[11−20]、[−2110]、[1−210]方向のうち少なくとも2つの方向に沿って設けられていることを特徴とする窒化物半導体発光ダイオード。 - 前記第1の窒化物半導体膜は、窒化物半導体バッファ層と、前記窒化物半導体バッファ層上に成長された窒化物半導体膜とを有し、
前記凹部は前記窒化物半導体バッファ層に達していないことを特徴とする請求項1に記載の窒化物半導体発光ダイオード。 - 第1の基板に、該第1の基板とは異なる材料からなる第1の窒化物半導体膜を成長する工程と、
前記第1の窒化物半導体膜の上面に凹部及び凸部を形成する工程と、
前記凹部及び凸部上に第2の窒化物半導体膜を成長させる工程とを、順次に行う窒化物半導体発光ダイオードの製造方法であって、
前記凹部及び凸部は同一材料で形成されたものであり、
前記凹部は溝であり、該溝の方向は、前記第1の基板に対して[11−20]、[−2110]、[1−210]方向のうち少なくとも2つの方向に沿って設けられていることを特徴とする窒化物半導体構造の製造方法。
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US6107653A (en) * | 1997-06-24 | 2000-08-22 | Massachusetts Institute Of Technology | Controlling threading dislocation densities in Ge on Si using graded GeSi layers and planarization |
US7227176B2 (en) * | 1998-04-10 | 2007-06-05 | Massachusetts Institute Of Technology | Etch stop layer system |
JP3594826B2 (ja) * | 1999-02-09 | 2004-12-02 | パイオニア株式会社 | 窒化物半導体発光素子及びその製造方法 |
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US6620238B2 (en) | 2003-09-16 |
US6335546B1 (en) | 2002-01-01 |
JP5762577B2 (ja) | 2015-08-12 |
JP2010258459A (ja) | 2010-11-11 |
JP2015122525A (ja) | 2015-07-02 |
JP5815144B2 (ja) | 2015-11-17 |
US20020014681A1 (en) | 2002-02-07 |
JP2014112695A (ja) | 2014-06-19 |
JP5743424B2 (ja) | 2015-07-01 |
JP2011187965A (ja) | 2011-09-22 |
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