ATE425557T1 - Lichtemittierendes halbleiterelement und zugehöriges produktionsverfahren - Google Patents

Lichtemittierendes halbleiterelement und zugehöriges produktionsverfahren

Info

Publication number
ATE425557T1
ATE425557T1 AT03728073T AT03728073T ATE425557T1 AT E425557 T1 ATE425557 T1 AT E425557T1 AT 03728073 T AT03728073 T AT 03728073T AT 03728073 T AT03728073 T AT 03728073T AT E425557 T1 ATE425557 T1 AT E425557T1
Authority
AT
Austria
Prior art keywords
gan layer
layer
light
production method
semiconductor element
Prior art date
Application number
AT03728073T
Other languages
English (en)
Inventor
Akihiko Ishibashi
Toshiya Yokogawa
Kiyoshi Ohnaka
Susumu Koike
Original Assignee
Panasonic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp filed Critical Panasonic Corp
Application granted granted Critical
Publication of ATE425557T1 publication Critical patent/ATE425557T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth
    • H01L21/0265—Pendeoepitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Heating, Cooling, Or Curing Plastics Or The Like In General (AREA)
  • Die Bonding (AREA)
AT03728073T 2002-05-15 2003-05-15 Lichtemittierendes halbleiterelement und zugehöriges produktionsverfahren ATE425557T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002139609 2002-05-15

Publications (1)

Publication Number Publication Date
ATE425557T1 true ATE425557T1 (de) 2009-03-15

Family

ID=29544895

Family Applications (2)

Application Number Title Priority Date Filing Date
AT08012060T ATE459107T1 (de) 2002-05-15 2003-05-15 Lichtemittierendes halbleiterelement
AT03728073T ATE425557T1 (de) 2002-05-15 2003-05-15 Lichtemittierendes halbleiterelement und zugehöriges produktionsverfahren

Family Applications Before (1)

Application Number Title Priority Date Filing Date
AT08012060T ATE459107T1 (de) 2002-05-15 2003-05-15 Lichtemittierendes halbleiterelement

Country Status (9)

Country Link
US (2) US7030417B2 (de)
EP (3) EP1814166A1 (de)
JP (1) JP3911699B2 (de)
CN (1) CN100418236C (de)
AT (2) ATE459107T1 (de)
AU (1) AU2003234805A1 (de)
DE (2) DE60331490D1 (de)
TW (1) TWI265641B (de)
WO (1) WO2003098710A1 (de)

Families Citing this family (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101034055B1 (ko) 2003-07-18 2011-05-12 엘지이노텍 주식회사 발광 다이오드 및 그 제조방법
KR20050077902A (ko) * 2004-01-29 2005-08-04 엘지전자 주식회사 질화물 반도체 박막의 성장 방법
US7687827B2 (en) 2004-07-07 2010-03-30 Nitronex Corporation III-nitride materials including low dislocation densities and methods associated with the same
DE102005010821B4 (de) * 2005-03-07 2007-01-25 Technische Universität Berlin Verfahren zum Herstellen eines Bauelements
US20060267043A1 (en) * 2005-05-27 2006-11-30 Emerson David T Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices
US7915624B2 (en) 2006-08-06 2011-03-29 Lightwave Photonics, Inc. III-nitride light-emitting devices with one or more resonance reflectors and reflective engineered growth templates for such devices, and methods
WO2008019059A2 (en) * 2006-08-06 2008-02-14 Lightwave Photonics Inc. Iii-nitride light-emitting devices with one or more resonance reflectors and reflective engineered growth templates for such devices, and methods
JP2008066702A (ja) * 2006-08-10 2008-03-21 Matsushita Electric Ind Co Ltd 固体撮像素子及びカメラ
KR101316120B1 (ko) * 2006-12-28 2013-10-11 서울바이오시스 주식회사 양극 알루미늄산화를 이용한 산란 중심을 구비하는 발광 소자 제조방법 및 그 발광 소자
KR100767258B1 (ko) 2007-05-15 2007-10-17 주식회사 시스넥스 질화물 반도체 발광소자 및 이의 제조방법
JP5045418B2 (ja) * 2007-11-28 2012-10-10 三菱化学株式会社 ＧａＮ系ＬＥＤ素子、ＧａＮ系ＬＥＤ素子の製造方法およびＧａＮ系ＬＥＤ素子製造用テンプレート
KR20100126437A (ko) 2008-02-25 2010-12-01 라이트웨이브 포토닉스 인코포레이티드 전류-주입/터널링 발광소자 및 방법
US9070827B2 (en) 2010-10-29 2015-06-30 Epistar Corporation Optoelectronic device and method for manufacturing the same
KR101068157B1 (ko) 2009-05-12 2011-09-27 전북대학교산학협력단 에어패스를 포함하는 발광소자 및 그 제조방법
KR101068158B1 (ko) 2009-05-12 2011-09-27 전북대학교산학협력단 에어면을 포함하는 발광소자 및 그 제조방법
JP5647497B2 (ja) * 2010-02-10 2014-12-24 ソウル バイオシス カンパニー リミテッドＳｅｏｕｌ Ｖｉｏｓｙｓ Ｃｏ．，Ｌｔｄ． 半導体基板、その製造方法、半導体デバイス及びその製造方法
WO2010143778A1 (ko) 2009-06-10 2010-12-16 서울옵토디바이스주식회사 반도체 기판, 그 제조 방법, 반도체 소자 및 그 제조 방법
US8481411B2 (en) 2009-06-10 2013-07-09 Seoul Opto Device Co., Ltd. Method of manufacturing a semiconductor substrate having a cavity
US8860183B2 (en) 2009-06-10 2014-10-14 Seoul Viosys Co., Ltd. Semiconductor substrate, semiconductor device, and manufacturing methods thereof
JP2011023537A (ja) * 2009-07-15 2011-02-03 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物半導体素子、エピタキシャル基板、及びｉｉｉ族窒化物半導体素子を作製する方法
WO2011025149A2 (ko) 2009-08-26 2011-03-03 서울옵토디바이스주식회사 반도체 기판 제조 방법 및 발광 소자 제조 방법
WO2011033570A1 (ja) * 2009-09-17 2011-03-24 株式会社 東芝 半導体発光素子
KR101631599B1 (ko) 2009-12-02 2016-06-27 삼성전자주식회사 발광 소자 및 그 제조 방법
EP3923352A1 (de) 2010-01-27 2021-12-15 Yale University, Inc. Auf leitfähigkeit beruhende selektive ätzung für gan-vorrichtungen und anwendungen davon
JP5570838B2 (ja) 2010-02-10 2014-08-13 ソウル バイオシス カンパニー リミテッド 半導体基板、その製造方法、半導体デバイス及びその製造方法
JP5508539B2 (ja) * 2010-09-30 2014-06-04 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物半導体発光素子およびその製造方法
CN102194941A (zh) * 2010-11-16 2011-09-21 华灿光电股份有限公司 内置空腔的高效率发光二极管及其制备方法
TWI419367B (zh) 2010-12-02 2013-12-11 Epistar Corp 光電元件及其製造方法
CN102544287B (zh) * 2010-12-10 2016-06-22 晶元光电股份有限公司 光电元件及其制造方法
CN103283045B (zh) 2010-12-28 2016-08-17 首尔伟傲世有限公司 高效发光二极管
CN102544249A (zh) * 2010-12-31 2012-07-04 展晶科技(深圳)有限公司 发光二极管晶粒及其制作方法
CN102623580B (zh) * 2011-01-27 2015-05-06 晶元光电股份有限公司 光电元件及其制造方法
US8536056B2 (en) * 2011-08-22 2013-09-17 Nanya Technology Corporation Method of forming conductive pattern
JP5743806B2 (ja) * 2011-08-23 2015-07-01 シャープ株式会社 窒化物半導体発光素子、窒化物半導体発光装置、及び窒化物半導体発光素子の製造方法
US10052848B2 (en) 2012-03-06 2018-08-21 Apple Inc. Sapphire laminates
US9608145B2 (en) * 2012-03-14 2017-03-28 Robbie J. Jorgenson Materials, structures, and methods for optical and electrical III-nitride semiconductor devices
KR101351484B1 (ko) 2012-03-22 2014-01-15 삼성전자주식회사 질화물계 반도체 전방향 리플렉터를 구비한 발광소자
TW201347231A (zh) * 2012-05-04 2013-11-16 Lextar Electronics Corp 發光二極體元件
WO2014004261A1 (en) * 2012-06-28 2014-01-03 Yale University Lateral electrochemical etching of iii-nitride materials for microfabrication
US9221289B2 (en) 2012-07-27 2015-12-29 Apple Inc. Sapphire window
US9232672B2 (en) 2013-01-10 2016-01-05 Apple Inc. Ceramic insert control mechanism
CN104103722B (zh) 2013-04-15 2017-03-01 展晶科技(深圳)有限公司 发光二极管晶粒及其制造方法
US9632537B2 (en) 2013-09-23 2017-04-25 Apple Inc. Electronic component embedded in ceramic material
US9678540B2 (en) 2013-09-23 2017-06-13 Apple Inc. Electronic component embedded in ceramic material
US9154678B2 (en) 2013-12-11 2015-10-06 Apple Inc. Cover glass arrangement for an electronic device
US9225056B2 (en) 2014-02-12 2015-12-29 Apple Inc. Antenna on sapphire structure
US11095096B2 (en) 2014-04-16 2021-08-17 Yale University Method for a GaN vertical microcavity surface emitting laser (VCSEL)
CN107078190B (zh) 2014-09-30 2020-09-08 耶鲁大学 用于GaN垂直微腔面发射激光器(VCSEL)的方法
US11018231B2 (en) 2014-12-01 2021-05-25 Yale University Method to make buried, highly conductive p-type III-nitride layers
WO2016187421A1 (en) 2015-05-19 2016-11-24 Yale University A method and device concerning iii-nitride edge emitting laser diode of high confinement factor with lattice matched cladding layer
US10406634B2 (en) 2015-07-01 2019-09-10 Apple Inc. Enhancing strength in laser cutting of ceramic components
KR102369976B1 (ko) * 2015-07-16 2022-03-04 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자
US10263144B2 (en) 2015-10-16 2019-04-16 Robbie J. Jorgenson System and method for light-emitting devices on lattice-matched metal substrates
KR102383837B1 (ko) 2016-05-26 2022-04-07 로비 조젠슨 3a족 질화물 성장 시스템 및 방법
CN106449933B (zh) * 2016-09-08 2018-11-06 华灿光电（浙江）有限公司 一种发光二极管芯片及其制备方法
KR102611981B1 (ko) * 2017-10-19 2023-12-11 삼성전자주식회사 발광 장치 및 그 제조 방법

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01104031A (ja) * 1987-07-03 1989-04-21 Ajinomoto Co Inc フッ素系化合物及び液晶組成物
EP1017113B1 (de) * 1997-01-09 2012-08-22 Nichia Corporation Halbleiteranordnung aus einer nitridverbindung
JP3930161B2 (ja) * 1997-08-29 2007-06-13 株式会社東芝 窒化物系半導体素子、発光素子及びその製造方法
JP3516433B2 (ja) * 1997-12-19 2004-04-05 昭和電工株式会社 化合物半導体発光素子
JP3301601B2 (ja) * 1998-01-27 2002-07-15 日亜化学工業株式会社 窒化物半導体発光素子
JP3620269B2 (ja) * 1998-02-27 2005-02-16 豊田合成株式会社 ＧａＮ系半導体素子の製造方法
US6335546B1 (en) * 1998-07-31 2002-01-01 Sharp Kabushiki Kaisha Nitride semiconductor structure, method for producing a nitride semiconductor structure, and light emitting device
JP3987660B2 (ja) * 1998-07-31 2007-10-10 シャープ株式会社 窒化物半導体構造とその製法および発光素子
KR100677683B1 (ko) * 1999-03-17 2007-02-05 미츠비시 덴센 고교 가부시키가이샤 반도체 기재와 그 제조 방법 및 반도체 결정의 제조 방법
EP1104031B1 (de) * 1999-11-15 2012-04-11 Panasonic Corporation Nitrid-Halbleiterlaserdiode und deren Herstellungsverfahren
JP3571641B2 (ja) * 1999-11-15 2004-09-29 松下電器産業株式会社 窒化物半導体素子
JP2001177145A (ja) * 1999-12-21 2001-06-29 Toshiba Electronic Engineering Corp 半導体発光素子およびその製造方法
JP3614070B2 (ja) * 2000-01-17 2005-01-26 日亜化学工業株式会社 窒化物半導体発光ダイオード
JP2001217503A (ja) * 2000-02-03 2001-08-10 Matsushita Electric Ind Co Ltd ＧａＮ系半導体発光素子およびその製造方法
JP4665286B2 (ja) * 2000-03-24 2011-04-06 三菱化学株式会社 半導体基材及びその製造方法
JP4406999B2 (ja) * 2000-03-31 2010-02-03 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体の製造方法及びｉｉｉ族窒化物系化合物半導体素子
TW518767B (en) 2000-03-31 2003-01-21 Toyoda Gosei Kk Production method of III nitride compound semiconductor and III nitride compound semiconductor element
US6627974B2 (en) * 2000-06-19 2003-09-30 Nichia Corporation Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor device using nitride semiconductor substrate
US6608360B2 (en) * 2000-12-15 2003-08-19 University Of Houston One-chip micro-integrated optoelectronic sensor
JP4683730B2 (ja) * 2001-01-04 2011-05-18 シャープ株式会社 窒化物半導体発光素子とこれを含む装置
US7352006B2 (en) * 2004-09-28 2008-04-01 Goldeneye, Inc. Light emitting diodes exhibiting both high reflectivity and high light extraction

Also Published As

Publication number Publication date
US7030417B2 (en) 2006-04-18
US20040021147A1 (en) 2004-02-05
US7470608B2 (en) 2008-12-30
AU2003234805A1 (en) 2003-12-02
EP1970969A1 (de) 2008-09-17
WO2003098710A1 (en) 2003-11-27
DE60331490D1 (de) 2010-04-08
EP1508922A4 (de) 2006-09-13
TW200403867A (en) 2004-03-01
DE60326572D1 (de) 2009-04-23
EP1508922A1 (de) 2005-02-23
US20060145165A1 (en) 2006-07-06
ATE459107T1 (de) 2010-03-15
TWI265641B (en) 2006-11-01
EP1508922B1 (de) 2009-03-11
EP1814166A1 (de) 2007-08-01
CN1653624A (zh) 2005-08-10
JP3911699B2 (ja) 2007-05-09
CN100418236C (zh) 2008-09-10
JPWO2003098710A1 (ja) 2005-09-22
EP1970969B1 (de) 2010-02-24

Similar Documents

Publication Publication Date Title
ATE425557T1 (de) Lichtemittierendes halbleiterelement und zugehöriges produktionsverfahren
US7915606B2 (en) Semiconductor light emitting device
DE60341314C5 (de) Hocheffiziente leuchtdioden auf galliumnitridbasis mit oberflächenaufrauhung
TW200514279A (en) Semiconductor light-emitting element and manufacturing method, integrated semiconductor light-emitting device and manufacturing method, image display and manufacturing method, and illuminating device and manufacturing method
JP4938822B2 (ja) 発光装置
US7317212B2 (en) Light emitting diode
TW200739957A (en) Manufacturing method of nitride semiconductor light-emitting element
TW200802964A (en) Nitride semiconductor light-emitting element and its manufacturing method
DE60324413D1 (de) Verfahren zur herstellung von vertikalstruktur-leds
TW200514281A (en) Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device
EP2045889A3 (de) Nitrid-Halbleiter-Lichtemittierende Vorrichtung
TW200642119A (en) Light-emitting device, method for making the same, and nitride semiconductor substrate
JP4195041B2 (ja) 発光装置
US20100187558A1 (en) Semiconductor light emitting device and method of fabricating the same
RU2014142050A (ru) Светоизлучающее устройство, выращенное на кремниевой подложке
US9142719B2 (en) Patterned substrate and light-emitting diode having the same
JP2005123501A5 (de)
TW200725948A (en) Gallium nitride-based compound semiconductor light-emitting device and production method thereof
JP4949211B2 (ja) 発光装置
TW200507260A (en) A semiconductor device and method for fabricating the same
TW200705704A (en) Light-emitting diode with co-doping rough layer and manufacturing method thereof
TW200623448A (en) Light emitting diode and manufacturing method thereof
TW200701501A (en) Method for fabricating led
TW201424033A (zh) 發光二極體製造方法
KR20070049910A (ko) 미세로드들을 구비하는 복수개의 발광셀들을 갖는 발광다이오드 및 그것을 제조하는 방법

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties