ATE459107T1 - Lichtemittierendes halbleiterelement - Google Patents

Lichtemittierendes halbleiterelement

Info

Publication number
ATE459107T1
ATE459107T1 AT08012060T AT08012060T ATE459107T1 AT E459107 T1 ATE459107 T1 AT E459107T1 AT 08012060 T AT08012060 T AT 08012060T AT 08012060 T AT08012060 T AT 08012060T AT E459107 T1 ATE459107 T1 AT E459107T1
Authority
AT
Austria
Prior art keywords
gan layer
layer
light emitting
type electrode
semiconductor element
Prior art date
Application number
AT08012060T
Other languages
English (en)
Inventor
Akihiko Ishibashi
Toshiya Yokogawa
Kiyoshi Ohnaka
Susumu Koike
Original Assignee
Panasonic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp filed Critical Panasonic Corp
Application granted granted Critical
Publication of ATE459107T1 publication Critical patent/ATE459107T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth
    • H01L21/0265—Pendeoepitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Heating, Cooling, Or Curing Plastics Or The Like In General (AREA)
  • Die Bonding (AREA)
AT08012060T 2002-05-15 2003-05-15 Lichtemittierendes halbleiterelement ATE459107T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002139609 2002-05-15

Publications (1)

Publication Number Publication Date
ATE459107T1 true ATE459107T1 (de) 2010-03-15

Family

ID=29544895

Family Applications (2)

Application Number Title Priority Date Filing Date
AT08012060T ATE459107T1 (de) 2002-05-15 2003-05-15 Lichtemittierendes halbleiterelement
AT03728073T ATE425557T1 (de) 2002-05-15 2003-05-15 Lichtemittierendes halbleiterelement und zugehöriges produktionsverfahren

Family Applications After (1)

Application Number Title Priority Date Filing Date
AT03728073T ATE425557T1 (de) 2002-05-15 2003-05-15 Lichtemittierendes halbleiterelement und zugehöriges produktionsverfahren

Country Status (9)

Country Link
US (2) US7030417B2 (de)
EP (3) EP1970969B1 (de)
JP (1) JP3911699B2 (de)
CN (1) CN100418236C (de)
AT (2) ATE459107T1 (de)
AU (1) AU2003234805A1 (de)
DE (2) DE60326572D1 (de)
TW (1) TWI265641B (de)
WO (1) WO2003098710A1 (de)

Families Citing this family (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101034055B1 (ko) 2003-07-18 2011-05-12 엘지이노텍 주식회사 발광 다이오드 및 그 제조방법
KR20050077902A (ko) * 2004-01-29 2005-08-04 엘지전자 주식회사 질화물 반도체 박막의 성장 방법
US7687827B2 (en) * 2004-07-07 2010-03-30 Nitronex Corporation III-nitride materials including low dislocation densities and methods associated with the same
DE102005010821B4 (de) * 2005-03-07 2007-01-25 Technische Universität Berlin Verfahren zum Herstellen eines Bauelements
US20060267043A1 (en) * 2005-05-27 2006-11-30 Emerson David T Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices
KR20090045310A (ko) * 2006-08-06 2009-05-07 라이트웨이브 포토닉스 인코포레이티드 하나 이상의 공진 반사기를 갖는 3족 질화물 발광소자 및 그 소자를 위한 반사 설계된 성장 템플릿 및, 방법
US7915624B2 (en) 2006-08-06 2011-03-29 Lightwave Photonics, Inc. III-nitride light-emitting devices with one or more resonance reflectors and reflective engineered growth templates for such devices, and methods
JP2008066702A (ja) * 2006-08-10 2008-03-21 Matsushita Electric Ind Co Ltd 固体撮像素子及びカメラ
KR101316120B1 (ko) * 2006-12-28 2013-10-11 서울바이오시스 주식회사 양극 알루미늄산화를 이용한 산란 중심을 구비하는 발광 소자 제조방법 및 그 발광 소자
KR100767258B1 (ko) 2007-05-15 2007-10-17 주식회사 시스넥스 질화물 반도체 발광소자 및 이의 제조방법
JP5045418B2 (ja) * 2007-11-28 2012-10-10 三菱化学株式会社 ＧａＮ系ＬＥＤ素子、ＧａＮ系ＬＥＤ素子の製造方法およびＧａＮ系ＬＥＤ素子製造用テンプレート
KR20100126437A (ko) 2008-02-25 2010-12-01 라이트웨이브 포토닉스 인코포레이티드 전류-주입/터널링 발광소자 및 방법
US9070827B2 (en) 2010-10-29 2015-06-30 Epistar Corporation Optoelectronic device and method for manufacturing the same
KR101068158B1 (ko) 2009-05-12 2011-09-27 전북대학교산학협력단 에어면을 포함하는 발광소자 및 그 제조방법
KR101068157B1 (ko) 2009-05-12 2011-09-27 전북대학교산학협력단 에어패스를 포함하는 발광소자 및 그 제조방법
US8481411B2 (en) 2009-06-10 2013-07-09 Seoul Opto Device Co., Ltd. Method of manufacturing a semiconductor substrate having a cavity
JP5647497B2 (ja) * 2010-02-10 2014-12-24 ソウル バイオシス カンパニー リミテッドＳｅｏｕｌ Ｖｉｏｓｙｓ Ｃｏ．，Ｌｔｄ． 半導体基板、その製造方法、半導体デバイス及びその製造方法
WO2010143778A1 (ko) 2009-06-10 2010-12-16 서울옵토디바이스주식회사 반도체 기판, 그 제조 방법, 반도체 소자 및 그 제조 방법
US8860183B2 (en) 2009-06-10 2014-10-14 Seoul Viosys Co., Ltd. Semiconductor substrate, semiconductor device, and manufacturing methods thereof
JP2011023537A (ja) 2009-07-15 2011-02-03 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物半導体素子、エピタキシャル基板、及びｉｉｉ族窒化物半導体素子を作製する方法
CN104795314B (zh) 2009-08-26 2018-02-09 首尔伟傲世有限公司 制造发光装置的方法
JP4881492B2 (ja) * 2009-09-17 2012-02-22 株式会社東芝 半導体発光素子
KR101631599B1 (ko) 2009-12-02 2016-06-27 삼성전자주식회사 발광 소자 및 그 제조 방법
JP5961557B2 (ja) 2010-01-27 2016-08-02 イェイル ユニヴァーシティ ＧａＮデバイスのための導電率ベースの選択的エッチング及びその用途
JP5570838B2 (ja) 2010-02-10 2014-08-13 ソウル バイオシス カンパニー リミテッド 半導体基板、その製造方法、半導体デバイス及びその製造方法
JP5508539B2 (ja) * 2010-09-30 2014-06-04 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物半導体発光素子およびその製造方法
CN102194941A (zh) * 2010-11-16 2011-09-21 华灿光电股份有限公司 内置空腔的高效率发光二极管及其制备方法
TWI419367B (zh) 2010-12-02 2013-12-11 Epistar Corp 光電元件及其製造方法
CN102544287B (zh) * 2010-12-10 2016-06-22 晶元光电股份有限公司 光电元件及其制造方法
WO2012091311A2 (en) * 2010-12-28 2012-07-05 Seoul Opto Device Co., Ltd. High efficiency light emitting diode
CN102544249A (zh) * 2010-12-31 2012-07-04 展晶科技(深圳)有限公司 发光二极管晶粒及其制作方法
CN102623580B (zh) * 2011-01-27 2015-05-06 晶元光电股份有限公司 光电元件及其制造方法
US8536056B2 (en) * 2011-08-22 2013-09-17 Nanya Technology Corporation Method of forming conductive pattern
JP5743806B2 (ja) * 2011-08-23 2015-07-01 シャープ株式会社 窒化物半導体発光素子、窒化物半導体発光装置、及び窒化物半導体発光素子の製造方法
US10052848B2 (en) 2012-03-06 2018-08-21 Apple Inc. Sapphire laminates
US20140008660A1 (en) * 2012-03-14 2014-01-09 Lightwave Photonics, Inc. Materials, structures, and methods for optical and electrical iii-nitride semiconductor devices
KR101351484B1 (ko) 2012-03-22 2014-01-15 삼성전자주식회사 질화물계 반도체 전방향 리플렉터를 구비한 발광소자
TW201347231A (zh) * 2012-05-04 2013-11-16 Lextar Electronics Corp 發光二極體元件
US9583353B2 (en) * 2012-06-28 2017-02-28 Yale University Lateral electrochemical etching of III-nitride materials for microfabrication
US9221289B2 (en) 2012-07-27 2015-12-29 Apple Inc. Sapphire window
US9232672B2 (en) 2013-01-10 2016-01-05 Apple Inc. Ceramic insert control mechanism
CN104103722B (zh) 2013-04-15 2017-03-01 展晶科技(深圳)有限公司 发光二极管晶粒及其制造方法
US9678540B2 (en) 2013-09-23 2017-06-13 Apple Inc. Electronic component embedded in ceramic material
US9632537B2 (en) 2013-09-23 2017-04-25 Apple Inc. Electronic component embedded in ceramic material
US9154678B2 (en) 2013-12-11 2015-10-06 Apple Inc. Cover glass arrangement for an electronic device
US9225056B2 (en) 2014-02-12 2015-12-29 Apple Inc. Antenna on sapphire structure
US11095096B2 (en) 2014-04-16 2021-08-17 Yale University Method for a GaN vertical microcavity surface emitting laser (VCSEL)
CN107078190B (zh) 2014-09-30 2020-09-08 耶鲁大学 用于GaN垂直微腔面发射激光器(VCSEL)的方法
US11018231B2 (en) 2014-12-01 2021-05-25 Yale University Method to make buried, highly conductive p-type III-nitride layers
EP3298624B1 (de) 2015-05-19 2023-04-19 Yale University Verfahren und vorrichtung für eine iii-nitrid-kantenemittierende laserdiode mit hohem begrenzungsfaktor mit gitterangepasster mantelschicht
US10406634B2 (en) 2015-07-01 2019-09-10 Apple Inc. Enhancing strength in laser cutting of ceramic components
KR102369976B1 (ko) * 2015-07-16 2022-03-04 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자
US10263144B2 (en) 2015-10-16 2019-04-16 Robbie J. Jorgenson System and method for light-emitting devices on lattice-matched metal substrates
US10170303B2 (en) 2016-05-26 2019-01-01 Robbie J. Jorgenson Group IIIA nitride growth system and method
CN106449933B (zh) * 2016-09-08 2018-11-06 华灿光电（浙江）有限公司 一种发光二极管芯片及其制备方法
KR102611981B1 (ko) * 2017-10-19 2023-12-11 삼성전자주식회사 발광 장치 및 그 제조 방법

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01104031A (ja) * 1987-07-03 1989-04-21 Ajinomoto Co Inc フッ素系化合物及び液晶組成物
CN100485985C (zh) * 1997-01-09 2009-05-06 日亚化学工业株式会社 氮化物半导体元器件
JP3930161B2 (ja) * 1997-08-29 2007-06-13 株式会社東芝 窒化物系半導体素子、発光素子及びその製造方法
JP3516433B2 (ja) * 1997-12-19 2004-04-05 昭和電工株式会社 化合物半導体発光素子
JP3301601B2 (ja) * 1998-01-27 2002-07-15 日亜化学工業株式会社 窒化物半導体発光素子
JP3620269B2 (ja) * 1998-02-27 2005-02-16 豊田合成株式会社 ＧａＮ系半導体素子の製造方法
US6335546B1 (en) * 1998-07-31 2002-01-01 Sharp Kabushiki Kaisha Nitride semiconductor structure, method for producing a nitride semiconductor structure, and light emitting device
JP3987660B2 (ja) * 1998-07-31 2007-10-10 シャープ株式会社 窒化物半導体構造とその製法および発光素子
US6940098B1 (en) * 1999-03-17 2005-09-06 Mitsubishi Cable Industries, Ltd. Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method
JP3571641B2 (ja) * 1999-11-15 2004-09-29 松下電器産業株式会社 窒化物半導体素子
EP1104031B1 (de) * 1999-11-15 2012-04-11 Panasonic Corporation Nitrid-Halbleiterlaserdiode und deren Herstellungsverfahren
JP2001177145A (ja) * 1999-12-21 2001-06-29 Toshiba Electronic Engineering Corp 半導体発光素子およびその製造方法
JP3614070B2 (ja) * 2000-01-17 2005-01-26 日亜化学工業株式会社 窒化物半導体発光ダイオード
JP2001217503A (ja) * 2000-02-03 2001-08-10 Matsushita Electric Ind Co Ltd ＧａＮ系半導体発光素子およびその製造方法
JP4665286B2 (ja) * 2000-03-24 2011-04-06 三菱化学株式会社 半導体基材及びその製造方法
TW518767B (en) 2000-03-31 2003-01-21 Toyoda Gosei Kk Production method of III nitride compound semiconductor and III nitride compound semiconductor element
JP4406999B2 (ja) * 2000-03-31 2010-02-03 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体の製造方法及びｉｉｉ族窒化物系化合物半導体素子
US6627974B2 (en) * 2000-06-19 2003-09-30 Nichia Corporation Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor device using nitride semiconductor substrate
US6608360B2 (en) * 2000-12-15 2003-08-19 University Of Houston One-chip micro-integrated optoelectronic sensor
JP4683730B2 (ja) * 2001-01-04 2011-05-18 シャープ株式会社 窒化物半導体発光素子とこれを含む装置
US7352006B2 (en) * 2004-09-28 2008-04-01 Goldeneye, Inc. Light emitting diodes exhibiting both high reflectivity and high light extraction

Also Published As

Publication number Publication date
CN1653624A (zh) 2005-08-10
TW200403867A (en) 2004-03-01
DE60326572D1 (de) 2009-04-23
TWI265641B (en) 2006-11-01
EP1508922A4 (de) 2006-09-13
JP3911699B2 (ja) 2007-05-09
EP1508922B1 (de) 2009-03-11
EP1508922A1 (de) 2005-02-23
DE60331490D1 (de) 2010-04-08
EP1970969A1 (de) 2008-09-17
US7030417B2 (en) 2006-04-18
US20040021147A1 (en) 2004-02-05
EP1970969B1 (de) 2010-02-24
AU2003234805A1 (en) 2003-12-02
JPWO2003098710A1 (ja) 2005-09-22
US7470608B2 (en) 2008-12-30
CN100418236C (zh) 2008-09-10
EP1814166A1 (de) 2007-08-01
WO2003098710A1 (en) 2003-11-27
US20060145165A1 (en) 2006-07-06
ATE425557T1 (de) 2009-03-15

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