JP5328065B2 - 拡散バリアー層及びその製造方法 - Google Patents

拡散バリアー層及びその製造方法 Download PDF

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Publication number
JP5328065B2
JP5328065B2 JP2000569428A JP2000569428A JP5328065B2 JP 5328065 B2 JP5328065 B2 JP 5328065B2 JP 2000569428 A JP2000569428 A JP 2000569428A JP 2000569428 A JP2000569428 A JP 2000569428A JP 5328065 B2 JP5328065 B2 JP 5328065B2
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Japan
Prior art keywords
platinum
ruthenium
layer
electrode
alloy
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Expired - Fee Related
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JP2000569428A
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English (en)
Japanese (ja)
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JP2002524872A5 (https=
JP2002524872A (ja
Inventor
ピー． マーシュ，ユージーン
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Mosaid Technologies Inc
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Conversant Intellectual Property Management Inc
Mosaid Technologies Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/418—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials the conductive layers comprising transition metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/069—Manufacture or treatment of conductive parts of the interconnections by forming self-aligned vias or self-aligned contact plugs

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  • Semiconductor Memories (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2000569428A 1998-09-03 1999-08-31 拡散バリアー層及びその製造方法 Expired - Fee Related JP5328065B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/146,866 1998-09-03
US09/146,866 US6323081B1 (en) 1998-09-03 1998-09-03 Diffusion barrier layers and methods of forming same
PCT/US1999/020053 WO2000014778A1 (en) 1998-09-03 1999-08-31 Diffusion barrier layers and methods of forming same

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012003619A Division JP5490829B2 (ja) 1998-09-03 2012-01-11 拡散バリアー層及びその製造方法

Publications (3)

Publication Number Publication Date
JP2002524872A JP2002524872A (ja) 2002-08-06
JP2002524872A5 JP2002524872A5 (https=) 2006-10-05
JP5328065B2 true JP5328065B2 (ja) 2013-10-30

Family

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JP2000569428A Expired - Fee Related JP5328065B2 (ja) 1998-09-03 1999-08-31 拡散バリアー層及びその製造方法
JP2012003619A Expired - Fee Related JP5490829B2 (ja) 1998-09-03 2012-01-11 拡散バリアー層及びその製造方法

Family Applications After (1)

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JP2012003619A Expired - Fee Related JP5490829B2 (ja) 1998-09-03 2012-01-11 拡散バリアー層及びその製造方法

Country Status (5)

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US (2) US6323081B1 (https=)
JP (2) JP5328065B2 (https=)
KR (1) KR100441190B1 (https=)
AU (1) AU5799699A (https=)
WO (1) WO2000014778A1 (https=)

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US20020008270A1 (en) 2002-01-24
JP2002524872A (ja) 2002-08-06
US6323081B1 (en) 2001-11-27
KR100441190B1 (ko) 2004-07-22
JP2012134508A (ja) 2012-07-12
AU5799699A (en) 2000-03-27
KR20010073053A (ko) 2001-07-31
WO2000014778A1 (en) 2000-03-16

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