JP5148566B2 - 記憶機能を有する3層構造磁気スピン極性化装置と当該装置を使用した記憶素子 - Google Patents
記憶機能を有する3層構造磁気スピン極性化装置と当該装置を使用した記憶素子 Download PDFInfo
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- JP5148566B2 JP5148566B2 JP2009170660A JP2009170660A JP5148566B2 JP 5148566 B2 JP5148566 B2 JP 5148566B2 JP 2009170660 A JP2009170660 A JP 2009170660A JP 2009170660 A JP2009170660 A JP 2009170660A JP 5148566 B2 JP5148566 B2 JP 5148566B2
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- H—ELECTRICITY
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
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- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
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- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
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- G—PHYSICS
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- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
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- H01—ELECTRIC ELEMENTS
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- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
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Description
本発明にかかる装置は、電子工学の分野、特に記憶セルおよびMRAM(磁気ランダムアクセスメモリ)形式の記憶素子又はダイレクトアクセス磁気記憶素子に適用することができる。
・「固定」層と称する、磁界の向きが固定された第1の磁性体層と、
・「自由」層と称する、磁界の向きを変更することができる第2の磁性体層と、
・固定層と自由層とを隔離する絶縁又は半絶縁層と、
・前記層の内部に層と直交方向に電子流を流す手段と、
・当該電子のスピンを極性化する手段とを具備する電磁装置であって、
少なくとも前記自由磁性体層が1つの非磁性体からなる導電層によって隔てられた逆方向に磁化された2つの層からなる第1の3層積層構造であることを特徴とする。
t:磁化の向きを反転させる磁性体層の厚さ、
Ms:磁化の向きを反転させるべき層が磁気的飽和状態である時の磁化の強さで、CoFeの場合には、Ms=1500emu/ccである、
Hk:磁化方向を反転させるべき磁性体層の異方性の程度、
Jc(書き込み):記憶セルに書き込みを行うための電流密度、
RAmax:トンネル接合構造の表面積と電気抵抗との積で、書き込み電圧が0.6Vを超えないように定義されたもの、
Jc(読み出し):RAmaxで読み出し電圧が0.3Vである時の、読み出し電流密度、
amin:超常磁性体限界に到達する前の(正方契機億セルに対する)記憶セルの一方の側面の最小限の大きさである。
t(nm) 5 5
Ms(emu/cc) 1500 1500
有効Hk(G) 40 40
Jc(書込) (A/cm2) 3.2x105 1.6x105
RAmax(Ω・μm2) 188 375
Jc(読出) (A/cm2) 1.6x105 8x104
amin(μm) 0.12 0.12
Claims (12)
- 固定層と称する、磁界の向きが固定された第1の磁性体層(12)と、
自由層と称する、磁界の向きを変更することができる第2の磁性体層(16)と、
固定層と自由層とを隔離する絶縁又は半絶縁層(14)と、
前記層の内部に、層の面と直交方向に電子流を流す手段(22、24)と、
該固定層または該自由層が当該電流を構成する電子のスピンを極性化可能であり、
少なくとも、前記自由層(16)が、1つの導電性非磁性体層(162)によって隔てられた、逆方向に磁化された2つの磁性体層(161、163)からなり、該磁性体層のうちの一方が導電性の基板と接合している第1の3層積層構造からなる電磁装置であって、
前記層の内部に層の面と直交方向に電子流を流す手段(22、24)は、1つの方向とその逆の方向に層の内部に電子流を流す書き込み手段であることを特徴とする電磁装置。 - 前記第1の磁性体層(12)は、導電性非磁性体層(122)と、当該導電性非磁性体層で隔てられ、逆向きに磁化された2つの磁性体層(121,123)からなる第2の3層積層構造によって構成され、当該第2の3層積層構造は第2の3層積層構造の磁化の向きを固定する第1の反強磁性交換層(10)によって覆われていることを特徴とする請求項1に記載の電磁装置。
- 前記第1の3層積層構造に含まれる2つの磁性体層(161,163)の厚さが同じである請求項1に記載された装置。
- 前記第1の3層積層構造、および/または、第2の3層積層構造は、Co、Fe、Niおよびこれらの合金からなる群から選択されたものからなる請求項2に記載の装置。
- 前記第1の3層積層構造は、Co、Fe、Niおよびこれらの合金からなる群から選択されたものからなる請求項1に記載の装置。
- 第1の3層積層構造、および/または、第2の3層積層構造の導電性非磁性体層(162,122)は、Ru、Re、Cu、Cr、PtおよびAgからなる群から選択された金属であるに請求項2に記載の装置。
- 第1の3層積層構造の導電性非磁性体層(162)は、Ru、Re、Cu、Cr、PtおよびAgからなる群から選択された金属である請求項1に記載の装置。
- 第1の反強磁性交換層(10)は、Mnベースの合金である請求項2に記載の装置。
- 該電子流は所定の電流密度以上を有する請求項1に記載の装置。
- さらに、前記層構造内に、前記所定の電流密度より小さい電流を流すことができ、積層構造の端子位置での電圧を測定する手段を有する読み出し手段を具備する請求項9に記載の装置。
- 行(80)と列(90)でアドレス可能な記憶セルからなるマトリックスを具備する記憶素子であって、それぞれの記憶セルは、請求項1に記載された電磁装置(60)によって構成され、該電磁装置(60)と直列接続された電流切り替え手段(70)を具備し、各電磁装置(60)はアドレッシング行(80)に、各電流切り替え手段(70)はアドレッシング列(90)に接続されていることを特徴とする記憶素子。
- さらに、リファレンス列(100)を具備し、特定の行(80)と特定の列(90)が交差する位置にある前記電磁装置の接点において読み出された電圧と同じ行(80)とリファレンス列(100)の交差位置にある電磁装置の端子において読み出された電圧とを比較する手段を具備する請求項11に記載の記憶素子。
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FR0015895A FR2817999B1 (fr) | 2000-12-07 | 2000-12-07 | Dispositif magnetique a polarisation de spin et a empilement(s) tri-couche(s) et memoire utilisant ce dispositif |
FR0015895 | 2000-12-07 |
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JP2001375089A Division JP4398127B2 (ja) | 2000-12-07 | 2001-12-07 | 記憶機能を有する3層構造磁気スピン極性化装置と当該装置を使用した記憶素子 |
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JP2009239317A JP2009239317A (ja) | 2009-10-15 |
JP5148566B2 true JP5148566B2 (ja) | 2013-02-20 |
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JP2009170660A Expired - Lifetime JP5148566B2 (ja) | 2000-12-07 | 2009-07-22 | 記憶機能を有する3層構造磁気スピン極性化装置と当該装置を使用した記憶素子 |
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US (1) | US6603677B2 (ja) |
EP (1) | EP1223585B1 (ja) |
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DE (1) | DE60133622T2 (ja) |
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FR2817999A1 (fr) | 2002-06-14 |
EP1223585A1 (fr) | 2002-07-17 |
DE60133622D1 (de) | 2008-05-29 |
FR2817999B1 (fr) | 2003-01-10 |
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