JP5339272B2 - スピントロニクスデバイス及び情報伝達方法 - Google Patents
スピントロニクスデバイス及び情報伝達方法 Download PDFInfo
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- JP5339272B2 JP5339272B2 JP2008148556A JP2008148556A JP5339272B2 JP 5339272 B2 JP5339272 B2 JP 5339272B2 JP 2008148556 A JP2008148556 A JP 2008148556A JP 2008148556 A JP2008148556 A JP 2008148556A JP 5339272 B2 JP5339272 B2 JP 5339272B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
- H01F10/20—Ferrites
- H01F10/24—Garnets
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/18—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using Hall-effect devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Power Engineering (AREA)
- Hall/Mr Elements (AREA)
Description
上記課題を解決するために、本発明は、スピントロニクスデバイスであって、磁性誘電体層と、前記磁性誘電体層上に設けられたPt、Au、Pd、Ag、Bi、またはそれらの合金、或いは、f軌道を有する元素等のスピン軌道相互作用の大きな元素からなる少なくとも一つの金属電極とを備え、前記磁性誘電体層と前記金属電極との界面でスピン波スピン流−純スピン流の交換を行う。
次いで、図2(c)に示すように、電気炉中において、例えば、550℃で5分間加熱する仮焼成によって酸化物層13とする。
12 MOD溶液
13 酸化物層
14 YIG層
15 Pt膜
16 電圧計
17 出力電極
21 YIG層
22,23 Pt電極
31 GGG単結晶基板
32 YIG層
33,34 Pt電極
35 PdPtMn反強磁性層
Claims (6)
- 磁性誘電体層と、前記磁性誘電体層上に設けられたPt、Au、Pd、Ag、Bi、またはそれらの合金、或いは、f軌道を有する元素のいずれかからなる少なくとも一つの金属電極とを備え、前記磁性誘電体層と前記金属電極との界面でスピン波スピン流−純スピン流の交換を行うスピントロニクスデバイス。
- 前記金属電極が少なくとも2個設けられ、1つの金属電極が前記磁性誘電体層へスピン波スピン流を注入するスピン流注入電極であり、他の少なくとも1つの金属電極が前記磁性誘電体層からのスピン波スピン流を電流として取り出す出力電極である請求項1記載のスピントロニクスデバイス。
- 前記磁性誘電体層が、強磁性誘電体或いは反強磁性誘電体のいずれかからなる請求項1または2に記載のスピントロニクスデバイス。
- 前記磁性誘電体層が強磁性誘電体からなるとともに、前記磁性誘電体層が該磁性誘電体層の磁化方向を固定する反強磁性層上に設けられたものである請求項1乃至3のいずれか1項に記載のスピントロニクスデバイス。
- 前記強磁性誘電体が、Y3 Fe5-x Gax O12(但し、x<5)からなる請求項1乃至4のいずれか1項に記載のスピントロニクスデバイス。
- 磁性誘電体層上にPt、Au、Pd、Ag、Bi、またはそれらの合金、或いは、f軌道を有する元素のいずれかからなる少なくとも一対の金属電極を設け、前記一対の金属電極の一方に信号電流を流すことによって前記磁性誘電体層中に信号電流に対応したスピン波スピン流を注入し、前記一対の金属電極の他方において、前記磁性誘電体層中を輸送されたスピン波スピン流によって純スピン流を生起し、前記純スピン流と直交する方向に信号電流を取り出す情報伝送方法。
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JP2008148556A JP5339272B2 (ja) | 2008-06-05 | 2008-06-05 | スピントロニクスデバイス及び情報伝達方法 |
PCT/JP2009/060225 WO2009148108A1 (ja) | 2008-06-05 | 2009-06-04 | スピントロニクスデバイス及び情報伝達方法 |
US12/996,509 US8254163B2 (en) | 2008-06-05 | 2009-06-04 | Spintronic device and information transmitting method |
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JP2008148556A JP5339272B2 (ja) | 2008-06-05 | 2008-06-05 | スピントロニクスデバイス及び情報伝達方法 |
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JP2009295824A JP2009295824A (ja) | 2009-12-17 |
JP5339272B2 true JP5339272B2 (ja) | 2013-11-13 |
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US (1) | US8254163B2 (ja) |
JP (1) | JP5339272B2 (ja) |
WO (1) | WO2009148108A1 (ja) |
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JP5397902B2 (ja) * | 2007-03-16 | 2014-01-22 | 国立大学法人東北大学 | スピン緩和変動方法、スピン流検出方法、及び、スピン緩和を利用したスピントロニクスデバイス |
US8686525B2 (en) * | 2009-03-25 | 2014-04-01 | Toroku University | Magnetic sensor and magnetic memory |
WO2011118374A1 (ja) | 2010-03-25 | 2011-09-29 | 日本電気株式会社 | 熱型センサ及びプラットフォーム |
JP5590488B2 (ja) * | 2010-08-27 | 2014-09-17 | 独立行政法人理化学研究所 | 電流−スピン流変換素子 |
JP5228015B2 (ja) | 2010-09-14 | 2013-07-03 | 株式会社東芝 | スピン波装置 |
CN103370793B (zh) | 2011-02-09 | 2016-08-17 | 日本电气株式会社 | 热电转换元件、热电转换元件的制造方法及热电转换方法 |
JP5907492B2 (ja) * | 2011-03-10 | 2016-04-26 | 国立大学法人東北大学 | 音波−スピン流変換素子 |
JP5828341B2 (ja) | 2011-05-09 | 2015-12-02 | 日本電気株式会社 | 位置検出装置 |
JP5987242B2 (ja) * | 2011-05-23 | 2016-09-07 | 日本電気株式会社 | 熱電変換素子および熱電変換方法 |
US9496474B2 (en) | 2011-06-09 | 2016-11-15 | Nec Corporation | Thermoelectric conversion apparatus |
JP5849344B2 (ja) * | 2011-08-09 | 2016-01-27 | 日本電気株式会社 | 位置検出装置 |
JP5673951B2 (ja) | 2011-08-23 | 2015-02-18 | 独立行政法人産業技術総合研究所 | 電界強磁性共鳴励起方法及びそれを用いた磁気機能素子 |
WO2013046948A1 (ja) | 2011-09-26 | 2013-04-04 | 日本電気株式会社 | 熱電変換素子 |
US8432884B1 (en) * | 2011-11-16 | 2013-04-30 | Metropcs Wireless, Inc. | System and method for increased bandwidth efficiency within microwave backhaul of a telecommunication system |
US9281467B2 (en) | 2012-06-29 | 2016-03-08 | Intel Corporation | Spin hall effect memory |
US9105830B2 (en) | 2012-08-26 | 2015-08-11 | Samsung Electronics Co., Ltd. | Method and system for providing dual magnetic tunneling junctions using spin-orbit interaction-based switching and memories utilizing the dual magnetic tunneling junctions |
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EP2909644B1 (en) * | 2012-10-19 | 2017-08-16 | Cambridge Enterprise Limited | Electronic devices |
JP6143051B2 (ja) * | 2012-10-19 | 2017-06-07 | 国立大学法人東北大学 | スピントロニクスデバイス |
RU2585404C1 (ru) * | 2015-04-09 | 2016-05-27 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Санкт-Петербургский государственный университет" (СПбГУ) | Графеновый спиновый фильтр |
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US9564523B1 (en) * | 2015-12-11 | 2017-02-07 | International Business Machines Corporation | Non-linear spin-orbit interaction devices and methods for current-to-spin conversion and amplification of spin-polarizations |
US10516098B2 (en) * | 2016-12-22 | 2019-12-24 | Purdue Research Foundation | Apparatus for spin injection enhancement and method of making the same |
WO2019005175A1 (en) * | 2017-06-30 | 2019-01-03 | Intel Corporation | MAGNETELECTRIC SPIN-ORBIT LOGIC WITH TRAVEL LOAD |
WO2019005176A1 (en) * | 2017-06-30 | 2019-01-03 | Intel Corporation | MAGNETO-ELECTRIC SPIN-ORBIT LOGIC WITH NEGATIVE CAPACITANCE |
KR101934644B1 (ko) * | 2017-07-31 | 2019-01-02 | 울산과학기술원 | 그래핀 홀 소자, 이의 제조방법 및 이를 포함하는 반도체 소자 |
CN109308924B (zh) * | 2018-08-10 | 2021-01-01 | 复旦大学 | 一种计算器件及其计算方法 |
US11557629B2 (en) * | 2019-03-27 | 2023-01-17 | Intel Corporation | Spin orbit memory devices with reduced magnetic moment and methods of fabrication |
US11594673B2 (en) | 2019-03-27 | 2023-02-28 | Intel Corporation | Two terminal spin orbit memory devices and methods of fabrication |
CN112035390A (zh) * | 2020-08-28 | 2020-12-04 | 中国科学院微电子研究所 | 数据传输装置及方法 |
JP2023018973A (ja) * | 2021-07-28 | 2023-02-09 | 太一 後藤 | スピン波励起検出構造体 |
JP2023018972A (ja) * | 2021-07-28 | 2023-02-09 | 信越化学工業株式会社 | スピン波励起検出構造体の製造方法 |
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FR2817999B1 (fr) | 2000-12-07 | 2003-01-10 | Commissariat Energie Atomique | Dispositif magnetique a polarisation de spin et a empilement(s) tri-couche(s) et memoire utilisant ce dispositif |
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US20110075476A1 (en) | 2011-03-31 |
JP2009295824A (ja) | 2009-12-17 |
WO2009148108A1 (ja) | 2009-12-10 |
US8254163B2 (en) | 2012-08-28 |
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