JP5096690B2 - 磁気メモリセル及びランダムアクセスメモリ - Google Patents
磁気メモリセル及びランダムアクセスメモリ Download PDFInfo
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- JP5096690B2 JP5096690B2 JP2006122539A JP2006122539A JP5096690B2 JP 5096690 B2 JP5096690 B2 JP 5096690B2 JP 2006122539 A JP2006122539 A JP 2006122539A JP 2006122539 A JP2006122539 A JP 2006122539A JP 5096690 B2 JP5096690 B2 JP 5096690B2
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- ferromagnetic
- free layer
- wiring
- ferromagnetic free
- memory cell
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/329—Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/11—Magnetic recording head
- Y10T428/1107—Magnetoresistive
- Y10T428/1121—Multilayer
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
Description
J. Magn. Magn. Mater. 139, L231 (1995) Nature Material 3, 868(2004) Appl.Phys.Lett.85,5358(2004)
Claims (9)
- 非磁性膜と、前記非磁性膜を挟んで形成された強磁性自由層と強磁性固定層とを有する磁気抵抗効果素子と、
前記磁気抵抗効果素子の膜厚方向に電流を流すための電極と、
前記強磁性自由層の磁化容易軸に対して平行に配置され、逆向きの磁区の同磁極が向き合った境界領域を有する強磁性配線とを有し、
前記強磁性配線の前記境界領域から発生された磁界を前記強磁性自由層に印加した状態で前記磁気抵抗効果素子に電流を流し、スピントランスファートルクによって前記強磁性自由層の磁化を反転させて情報の書き込みを行うことを特徴とする磁気メモリセル。 - 請求項1記載の磁気メモリセルにおいて、前記非磁性膜は絶縁膜からなることを特徴とする磁気メモリセル。
- 請求項1記載の磁気メモリセルにおいて、前記強磁性配線は前記強磁性自由層の膜面を含む平面に対して上下方向にずれた位置に配置されていることを特徴とする磁気メモリセル。
- 請求項1記載の磁気メモリセルにおいて、前記磁気抵抗効果素子に流れる電流をオン・オフ制御するスイッチング素子を有することを特徴とする磁気メモリセル。
- 非磁性膜を挟んで形成された強磁性自由層と強磁性固定層とを有する磁気抵抗効果素子、前記磁気抵抗効果素子の膜厚方向に電流を流すための電極、及び前記磁気抵抗効果素子に流れる電流をオン・オフ制御するスイッチング素子を各々備える磁気メモリセルが2次元アレイ状に配列されたメモリセル群と、
前記メモリセル群の中の所望の磁気メモリセルを選択する選択手段と、
前記2次元アレイを構成する磁気メモリセルの一列毎に、当該列に属する複数の磁気メモリセルに含まれる複数の強磁性自由層の磁化容易軸方向に平行になるように配置され、逆向きの磁区の同磁極が向き合った境界領域を有する強磁性配線と、
前記強磁性配線の前記境界領域を移動させる境界領域移動手段とを有し、
前記選択手段によって選択された磁気メモリセルの前記強磁性自由層に、当該磁気メモリセルに対応付けられた前記強磁性配線の前記境界領域から発生された磁界を印加した状態で当該磁気メモリセルの前記磁気抵抗効果素子に電流を流し、スピントランスファートルクによって前記強磁性自由層の磁化を反転させて情報の書き込みを行うことを特徴とするランダムアクセスメモリ。 - 請求項5記載のランダムアクセスメモリにおいて、前記非磁性膜は絶縁膜からなることを特徴とするランダムアクセスメモリ。
- 請求項5記載のランダムアクセスメモリにおいて、前記強磁性配線は前記強磁性自由層の膜面を含む平面に対して上下方向にずれた位置に配置されていることを特徴とするランダムアクセスメモリ。
- 請求項5記載のランダムアクセスメモリにおいて、前記境界領域移動手段は、前記強磁性配線に方向の異なる電流を流す手段であることを特徴とするランダムアクセスメモリ。
- 請求項5記載のランダムアクセスメモリにおいて、前記強磁性配線は各磁気メモリセルに対応する位置に前記境界領域を停止させるための括れ部を有することを特徴とするランダムアクセスメモリ。
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JP2006122539A JP5096690B2 (ja) | 2006-04-26 | 2006-04-26 | 磁気メモリセル及びランダムアクセスメモリ |
US11/790,211 US7759750B2 (en) | 2006-04-26 | 2007-04-24 | Magnetic memory cell and random access memory |
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JP2006122539A JP5096690B2 (ja) | 2006-04-26 | 2006-04-26 | 磁気メモリセル及びランダムアクセスメモリ |
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JP2012181782A Division JP2012253379A (ja) | 2012-08-20 | 2012-08-20 | 磁気メモリセル及びランダムアクセスメモリ |
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Families Citing this family (13)
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RU2310928C2 (ru) * | 2004-10-27 | 2007-11-20 | Самсунг Электроникс Ко., Лтд. | Усовершенствованное многоразрядное магнитное запоминающее устройство с произвольной выборкой и способы его функционирования и производства |
DE102005040612A1 (de) * | 2005-08-27 | 2007-03-01 | Behr Gmbh & Co. Kg | Abgaswärmeübertrager |
KR100846510B1 (ko) * | 2006-12-22 | 2008-07-17 | 삼성전자주식회사 | 자구벽 이동을 이용한 정보 저장 장치 및 그 제조방법 |
US7957175B2 (en) * | 2006-12-22 | 2011-06-07 | Samsung Electronics Co., Ltd. | Information storage devices using movement of magnetic domain walls and methods of manufacturing the same |
JP4496242B2 (ja) * | 2007-08-29 | 2010-07-07 | 株式会社東芝 | スピントランジスタ及び磁気メモリ |
JP2009158877A (ja) * | 2007-12-28 | 2009-07-16 | Hitachi Ltd | 磁気メモリセル及びランダムアクセスメモリ |
JPWO2009110119A1 (ja) * | 2008-03-06 | 2011-07-14 | 富士電機ホールディングス株式会社 | 強磁性トンネル接合素子および強磁性トンネル接合素子の駆動方法 |
KR101586271B1 (ko) * | 2008-04-03 | 2016-01-20 | 삼성전자주식회사 | 자기 메모리 소자 및 그 정보 쓰기 및 읽기 방법 |
KR101311128B1 (ko) * | 2012-01-25 | 2013-09-25 | 인하대학교 산학협력단 | 스핀 전달 토크 자기 랜덤 억세스 메모리 |
JP2013197215A (ja) * | 2012-03-16 | 2013-09-30 | Toshiba Corp | 磁気記憶装置 |
KR20140042986A (ko) * | 2012-09-28 | 2014-04-08 | 삼성전자주식회사 | 단위 셀이 단일 소자로 구성된 메모리 소자 및 그 제조방법 |
US9105572B2 (en) * | 2013-09-09 | 2015-08-11 | Hiroyuki Kanaya | Magnetic memory and manufacturing method thereof |
US10429666B1 (en) | 2016-03-16 | 2019-10-01 | Apple Inc. | Camera actuator with magnet holder having magnetic field |
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US5695864A (en) | 1995-09-28 | 1997-12-09 | International Business Machines Corporation | Electronic device using magnetic components |
US5640343A (en) * | 1996-03-18 | 1997-06-17 | International Business Machines Corporation | Magnetic memory array using magnetic tunnel junction devices in the memory cells |
JP2001156357A (ja) * | 1999-09-16 | 2001-06-08 | Toshiba Corp | 磁気抵抗効果素子および磁気記録素子 |
US20030120858A1 (en) * | 2000-09-15 | 2003-06-26 | Matrix Semiconductor, Inc. | Memory devices and methods for use therewith |
FR2817999B1 (fr) | 2000-12-07 | 2003-01-10 | Commissariat Energie Atomique | Dispositif magnetique a polarisation de spin et a empilement(s) tri-couche(s) et memoire utilisant ce dispositif |
US6870759B2 (en) * | 2002-12-09 | 2005-03-22 | Applied Spintronics Technology, Inc. | MRAM array with segmented magnetic write lines |
JP3824600B2 (ja) | 2003-07-30 | 2006-09-20 | 株式会社東芝 | 磁気抵抗効果素子および磁気メモリ |
JP4487705B2 (ja) * | 2004-09-22 | 2010-06-23 | ソニー株式会社 | メモリの記録方法 |
JP2006339286A (ja) * | 2005-05-31 | 2006-12-14 | Tdk Corp | 磁気メモリ及びその製造方法 |
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