DE60133622D1 - Spin polarisierte magnetische dreischichtige Stapelanordnung und Speicher unter Verwendung einer solchen - Google Patents

Spin polarisierte magnetische dreischichtige Stapelanordnung und Speicher unter Verwendung einer solchen

Info

Publication number
DE60133622D1
DE60133622D1 DE60133622T DE60133622T DE60133622D1 DE 60133622 D1 DE60133622 D1 DE 60133622D1 DE 60133622 T DE60133622 T DE 60133622T DE 60133622 T DE60133622 T DE 60133622T DE 60133622 D1 DE60133622 D1 DE 60133622D1
Authority
DE
Germany
Prior art keywords
memory
stack assembly
layered stack
spin polarized
polarized magnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60133622T
Other languages
English (en)
Other versions
DE60133622T2 (de
Inventor
Olivier Redon
Bernard Dieny
Bernard Rodmacq
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Application granted granted Critical
Publication of DE60133622D1 publication Critical patent/DE60133622D1/de
Publication of DE60133622T2 publication Critical patent/DE60133622T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/3218—Exchange coupling of magnetic films via an antiferromagnetic interface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
  • Thin Magnetic Films (AREA)
DE60133622T 2000-12-07 2001-12-05 Spin polarisierte magnetische dreischichtige Stapelanordnung und Speicher unter Verwendung einer solchen Expired - Lifetime DE60133622T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0015895 2000-12-07
FR0015895A FR2817999B1 (fr) 2000-12-07 2000-12-07 Dispositif magnetique a polarisation de spin et a empilement(s) tri-couche(s) et memoire utilisant ce dispositif

Publications (2)

Publication Number Publication Date
DE60133622D1 true DE60133622D1 (de) 2008-05-29
DE60133622T2 DE60133622T2 (de) 2009-06-10

Family

ID=8857352

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60133622T Expired - Lifetime DE60133622T2 (de) 2000-12-07 2001-12-05 Spin polarisierte magnetische dreischichtige Stapelanordnung und Speicher unter Verwendung einer solchen

Country Status (5)

Country Link
US (1) US6603677B2 (de)
EP (1) EP1223585B1 (de)
JP (2) JP4398127B2 (de)
DE (1) DE60133622T2 (de)
FR (1) FR2817999B1 (de)

Families Citing this family (301)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6093175A (ja) * 1983-10-27 1985-05-24 Nippon Denso Co Ltd 燃料噴射時期調整装置の噴射時期検出装置
DE10059181C2 (de) * 2000-11-29 2002-10-24 Infineon Technologies Ag Integrierter magnetoresistiver Halbleiterspeicher und Herstellungsverfahren dafür
WO2003010758A1 (en) * 2001-07-24 2003-02-06 Seagate Technology Llc Write head for high anisotropy media
JP4780878B2 (ja) * 2001-08-02 2011-09-28 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
FR2832542B1 (fr) * 2001-11-16 2005-05-06 Commissariat Energie Atomique Dispositif magnetique a jonction tunnel magnetique, memoire et procedes d'ecriture et de lecture utilisant ce dispositif
JP3866567B2 (ja) * 2001-12-13 2007-01-10 株式会社東芝 半導体記憶装置及びその製造方法
JP3583102B2 (ja) * 2001-12-27 2004-10-27 株式会社東芝 磁気スイッチング素子及び磁気メモリ
US6606262B2 (en) * 2002-01-10 2003-08-12 Hewlett-Packard Development Company, L.P. Magnetoresistive random access memory (MRAM) with on-chip automatic determination of optimized write current method and apparatus
US6714444B2 (en) 2002-08-06 2004-03-30 Grandis, Inc. Magnetic element utilizing spin transfer and an MRAM device using the magnetic element
JP4146202B2 (ja) * 2002-09-24 2008-09-10 株式会社東芝 スピントンネルトランジスタ、磁気再生ヘッド、磁気情報再生システム、及び磁気記憶装置
US6838740B2 (en) * 2002-09-27 2005-01-04 Grandis, Inc. Thermally stable magnetic elements utilizing spin transfer and an MRAM device using the magnetic element
US6958927B1 (en) 2002-10-09 2005-10-25 Grandis Inc. Magnetic element utilizing spin-transfer and half-metals and an MRAM device using the magnetic element
US8553517B2 (en) * 2002-10-14 2013-10-08 Samsung Electronics Co., Ltd. Magnetic medium using spin-polarized electrons and apparatus and method of recording data on the magnetic medium
EP1559106A2 (de) * 2002-10-22 2005-08-03 Btg International Limited Magnetspeicherbaustein
KR100493161B1 (ko) * 2002-11-07 2005-06-02 삼성전자주식회사 Ｍｒａｍ과 그 제조 및 구동방법
US6791867B2 (en) * 2002-11-18 2004-09-14 Hewlett-Packard Development Company, L.P. Selection of memory cells in data storage devices
US6956766B2 (en) * 2002-11-26 2005-10-18 Kabushiki Kaisha Toshiba Magnetic cell and magnetic memory
JP2004179483A (ja) * 2002-11-28 2004-06-24 Hitachi Ltd 不揮発性磁気メモリ
JP4873338B2 (ja) * 2002-12-13 2012-02-08 独立行政法人科学技術振興機構 スピン注入デバイス及びこれを用いた磁気装置
JP2011171756A (ja) * 2002-12-13 2011-09-01 Japan Science & Technology Agency スピン注入デバイス及びこれを用いた磁気装置
US7190611B2 (en) * 2003-01-07 2007-03-13 Grandis, Inc. Spin-transfer multilayer stack containing magnetic layers with resettable magnetization
US6829161B2 (en) * 2003-01-10 2004-12-07 Grandis, Inc. Magnetostatically coupled magnetic elements utilizing spin transfer and an MRAM device using the magnetic element
US6847547B2 (en) * 2003-02-28 2005-01-25 Grandis, Inc. Magnetostatically coupled magnetic elements utilizing spin transfer and an MRAM device using the magnetic element
KR100615600B1 (ko) * 2004-08-09 2006-08-25 삼성전자주식회사 고집적 자기램 소자 및 그 제조방법
US6952364B2 (en) * 2003-03-03 2005-10-04 Samsung Electronics Co., Ltd. Magnetic tunnel junction structures and methods of fabrication
KR100542743B1 (ko) * 2003-04-22 2006-01-11 삼성전자주식회사 자기 랜덤 엑세스 메모리
US6933155B2 (en) * 2003-05-21 2005-08-23 Grandis, Inc. Methods for providing a sub .15 micron magnetic memory structure
US7006375B2 (en) * 2003-06-06 2006-02-28 Seagate Technology Llc Hybrid write mechanism for high speed and high density magnetic random access memory
US6865109B2 (en) * 2003-06-06 2005-03-08 Seagate Technology Llc Magnetic random access memory having flux closure for the free layer and spin transfer write mechanism
JP4966483B2 (ja) * 2003-06-25 2012-07-04 パナソニック株式会社 磁気抵抗効果素子、および磁気抵抗効果素子を用いた磁気ヘッド、記録再生装置、メモリ素子、メモリアレイ、および磁気抵抗効果素子の製造方法
JP2005064050A (ja) * 2003-08-14 2005-03-10 Toshiba Corp 半導体記憶装置及びそのデータ書き込み方法
US7573737B2 (en) * 2003-08-19 2009-08-11 New York University High speed low power magnetic devices based on current induced spin-momentum transfer
US7911832B2 (en) 2003-08-19 2011-03-22 New York University High speed low power magnetic devices based on current induced spin-momentum transfer
US8755222B2 (en) 2003-08-19 2014-06-17 New York University Bipolar spin-transfer switching
US6980469B2 (en) * 2003-08-19 2005-12-27 New York University High speed low power magnetic devices based on current induced spin-momentum transfer
US6985385B2 (en) 2003-08-26 2006-01-10 Grandis, Inc. Magnetic memory element utilizing spin transfer switching and storing multiple bits
JP2005093488A (ja) * 2003-09-12 2005-04-07 Sony Corp 磁気抵抗効果素子とその製造方法、および磁気メモリ装置とその製造方法
US7161829B2 (en) * 2003-09-19 2007-01-09 Grandis, Inc. Current confined pass layer for magnetic elements utilizing spin-transfer and an MRAM device using such magnetic elements
KR100615089B1 (ko) * 2004-07-14 2006-08-23 삼성전자주식회사 낮은 구동 전류를 갖는 자기 램
KR100568512B1 (ko) * 2003-09-29 2006-04-07 삼성전자주식회사 열발생층을 갖는 자기열 램셀들 및 이를 구동시키는 방법들
KR100835275B1 (ko) * 2004-08-12 2008-06-05 삼성전자주식회사 스핀 주입 메카니즘을 사용하여 자기램 소자를 구동시키는방법들
US7372722B2 (en) * 2003-09-29 2008-05-13 Samsung Electronics Co., Ltd. Methods of operating magnetic random access memory devices including heat-generating structures
US7369428B2 (en) * 2003-09-29 2008-05-06 Samsung Electronics Co., Ltd. Methods of operating a magnetic random access memory device and related devices and structures
JP2005109263A (ja) * 2003-09-30 2005-04-21 Toshiba Corp 磁性体素子及磁気メモリ
US7027320B2 (en) * 2003-10-21 2006-04-11 Hewlett-Packard Development Company, L.P. Soft-reference magnetic memory digitized device and method of operation
US7282755B2 (en) 2003-11-14 2007-10-16 Grandis, Inc. Stress assisted current driven switching for magnetic memory applications
US7009877B1 (en) 2003-11-14 2006-03-07 Grandis, Inc. Three-terminal magnetostatically coupled spin transfer-based MRAM cell
US7602000B2 (en) * 2003-11-19 2009-10-13 International Business Machines Corporation Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element
JP2005166087A (ja) * 2003-11-28 2005-06-23 Toshiba Corp 半導体集積回路装置
JP4581394B2 (ja) * 2003-12-22 2010-11-17 ソニー株式会社 磁気メモリ
US20050136600A1 (en) 2003-12-22 2005-06-23 Yiming Huai Magnetic elements with ballistic magnetoresistance utilizing spin-transfer and an MRAM device using such magnetic elements
JP2005209248A (ja) * 2004-01-20 2005-08-04 Hitachi Ltd 磁気ヘッド及び磁気記録再生装置
US7110287B2 (en) 2004-02-13 2006-09-19 Grandis, Inc. Method and system for providing heat assisted switching of a magnetic element utilizing spin transfer
US7242045B2 (en) 2004-02-19 2007-07-10 Grandis, Inc. Spin transfer magnetic element having low saturation magnetization free layers
US6967863B2 (en) 2004-02-25 2005-11-22 Grandis, Inc. Perpendicular magnetization magnetic element utilizing spin transfer
US20110140217A1 (en) * 2004-02-26 2011-06-16 Grandis, Inc. Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization
US6992359B2 (en) * 2004-02-26 2006-01-31 Grandis, Inc. Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization
JP2006148039A (ja) * 2004-03-03 2006-06-08 Toshiba Corp 磁気抵抗効果素子および磁気メモリ
JP2005294376A (ja) 2004-03-31 2005-10-20 Toshiba Corp 磁気記録素子及び磁気メモリ
US6946698B1 (en) 2004-04-02 2005-09-20 Taiwan Semiconductor Manufacturing Company, Ltd. MRAM device having low-k inter-metal dielectric
JP4747507B2 (ja) * 2004-04-16 2011-08-17 ソニー株式会社 磁気メモリ及びその記録方法
US7233039B2 (en) * 2004-04-21 2007-06-19 Grandis, Inc. Spin transfer magnetic elements with spin depolarization layers
US7057921B2 (en) * 2004-05-11 2006-06-06 Grandis, Inc. Spin barrier enhanced dual magnetoresistance effect element and magnetic memory using the same
US7088609B2 (en) * 2004-05-11 2006-08-08 Grandis, Inc. Spin barrier enhanced magnetoresistance effect element and magnetic memory using the same
US7576956B2 (en) * 2004-07-26 2009-08-18 Grandis Inc. Magnetic tunnel junction having diffusion stop layer
KR100660539B1 (ko) * 2004-07-29 2006-12-22 삼성전자주식회사 자기 기억 소자 및 그 형성 방법
US7221584B2 (en) * 2004-08-13 2007-05-22 Taiwan Semiconductor Manufacturing Company, Ltd. MRAM cell having shared configuration
JP4568152B2 (ja) * 2004-09-17 2010-10-27 株式会社東芝 磁気記録素子及びそれを用いた磁気記録装置
JP4920881B2 (ja) * 2004-09-27 2012-04-18 株式会社日立製作所 低消費電力磁気メモリ及び磁化情報書き込み装置
JP2006108316A (ja) * 2004-10-04 2006-04-20 Sony Corp 記憶素子及びメモリ
JP4626253B2 (ja) * 2004-10-08 2011-02-02 ソニー株式会社 記憶装置
KR100642638B1 (ko) * 2004-10-21 2006-11-10 삼성전자주식회사 낮은 임계 전류를 갖는 자기 램 소자의 구동 방법들
US7149106B2 (en) * 2004-10-22 2006-12-12 Freescale Semiconductor, Inc. Spin-transfer based MRAM using angular-dependent selectivity
US20060092688A1 (en) * 2004-10-29 2006-05-04 International Business Machines Corporation Stacked magnetic devices
JP2006165264A (ja) * 2004-12-07 2006-06-22 Sony Corp メモリ、磁気ヘッド及び磁気センサー、並びにこれらの製造方法
JP2006179694A (ja) * 2004-12-22 2006-07-06 Sony Corp 記憶素子
US7170775B2 (en) * 2005-01-06 2007-01-30 Taiwan Semiconductor Manufacturing Company, Ltd. MRAM cell with reduced write current
JP2007027197A (ja) * 2005-07-12 2007-02-01 Sony Corp 記憶素子
JP2007027575A (ja) * 2005-07-20 2007-02-01 Toshiba Corp 磁気抵抗効果素子および磁気メモリ
JP5096702B2 (ja) * 2005-07-28 2012-12-12 株式会社日立製作所 磁気抵抗効果素子及びそれを搭載した不揮発性磁気メモリ
US7224601B2 (en) 2005-08-25 2007-05-29 Grandis Inc. Oscillating-field assisted spin torque switching of a magnetic tunnel junction memory element
JP2007081280A (ja) * 2005-09-16 2007-03-29 Fujitsu Ltd 磁気抵抗効果素子及び磁気メモリ装置
US7777261B2 (en) 2005-09-20 2010-08-17 Grandis Inc. Magnetic device having stabilized free ferromagnetic layer
US7859034B2 (en) * 2005-09-20 2010-12-28 Grandis Inc. Magnetic devices having oxide antiferromagnetic layer next to free ferromagnetic layer
US7973349B2 (en) * 2005-09-20 2011-07-05 Grandis Inc. Magnetic device having multilayered free ferromagnetic layer
WO2007040189A1 (ja) * 2005-10-03 2007-04-12 Nec Corporation 磁気ランダムアクセスメモリ及びその動作方法
US7286395B2 (en) * 2005-10-27 2007-10-23 Grandis, Inc. Current driven switched magnetic storage cells having improved read and write margins and magnetic memories using such cells
FR2892871B1 (fr) 2005-11-02 2007-11-23 Commissariat Energie Atomique Oscillateur radio frequence a courant elelctrique polarise en spin
US7430135B2 (en) * 2005-12-23 2008-09-30 Grandis Inc. Current-switched spin-transfer magnetic devices with reduced spin-transfer switching current density
US20070253245A1 (en) * 2006-04-27 2007-11-01 Yadav Technology High Capacity Low Cost Multi-Stacked Cross-Line Magnetic Memory
US20080246104A1 (en) * 2007-02-12 2008-10-09 Yadav Technology High Capacity Low Cost Multi-State Magnetic Memory
US8018011B2 (en) * 2007-02-12 2011-09-13 Avalanche Technology, Inc. Low cost multi-state magnetic memory
US8535952B2 (en) * 2006-02-25 2013-09-17 Avalanche Technology, Inc. Method for manufacturing non-volatile magnetic memory
US8084835B2 (en) * 2006-10-20 2011-12-27 Avalanche Technology, Inc. Non-uniform switching based non-volatile magnetic based memory
US7732881B2 (en) * 2006-11-01 2010-06-08 Avalanche Technology, Inc. Current-confined effect of magnetic nano-current-channel (NCC) for magnetic random access memory (MRAM)
US8058696B2 (en) * 2006-02-25 2011-11-15 Avalanche Technology, Inc. High capacity low cost multi-state magnetic memory
US8508984B2 (en) * 2006-02-25 2013-08-13 Avalanche Technology, Inc. Low resistance high-TMR magnetic tunnel junction and process for fabrication thereof
US8063459B2 (en) * 2007-02-12 2011-11-22 Avalanche Technologies, Inc. Non-volatile magnetic memory element with graded layer
US8183652B2 (en) * 2007-02-12 2012-05-22 Avalanche Technology, Inc. Non-volatile magnetic memory with low switching current and high thermal stability
US20070246787A1 (en) * 2006-03-29 2007-10-25 Lien-Chang Wang On-plug magnetic tunnel junction devices based on spin torque transfer switching
JP2007273523A (ja) * 2006-03-30 2007-10-18 Tdk Corp 磁気メモリ及びスピン注入方法
JP4277870B2 (ja) 2006-04-17 2009-06-10 ソニー株式会社 記憶素子及びメモリ
JP2007294737A (ja) 2006-04-26 2007-11-08 Hitachi Ltd トンネル磁気抵抗効果素子、それを用いた磁気メモリセル及びランダムアクセスメモリ
JP5096690B2 (ja) 2006-04-26 2012-12-12 株式会社日立製作所 磁気メモリセル及びランダムアクセスメモリ
EP1852874B1 (de) * 2006-05-04 2010-04-28 Hitachi Ltd. Magnetspeichervorrichtung
JP2007305882A (ja) * 2006-05-12 2007-11-22 Sony Corp 記憶素子及びメモリ
JP5076361B2 (ja) * 2006-05-18 2012-11-21 株式会社日立製作所 半導体装置
US7532505B1 (en) * 2006-07-17 2009-05-12 Grandis, Inc. Method and system for using a pulsed field to assist spin transfer induced switching of magnetic memory elements
US7502249B1 (en) * 2006-07-17 2009-03-10 Grandis, Inc. Method and system for using a pulsed field to assist spin transfer induced switching of magnetic memory elements
US7851840B2 (en) * 2006-09-13 2010-12-14 Grandis Inc. Devices and circuits based on magnetic tunnel junctions utilizing a multilayer barrier
JP5147212B2 (ja) * 2006-10-04 2013-02-20 株式会社日立製作所 磁気メモリセル及び磁気ランダムアクセスメモリ
TWI449040B (zh) 2006-10-06 2014-08-11 Crocus Technology Sa 用於提供內容可定址的磁阻式隨機存取記憶體單元之系統及方法
US7742329B2 (en) * 2007-03-06 2010-06-22 Qualcomm Incorporated Word line transistor strength control for read and write in spin transfer torque magnetoresistive random access memory
JP4682998B2 (ja) * 2007-03-15 2011-05-11 ソニー株式会社 記憶素子及びメモリ
US8564293B2 (en) * 2007-03-16 2013-10-22 Tohoku University Method for changing spin relaxation, method for detecting spin current and spintronics device using spin relaxation
US7573736B2 (en) * 2007-05-22 2009-08-11 Taiwan Semiconductor Manufacturing Company Spin torque transfer MRAM device
JP4625936B2 (ja) * 2007-06-12 2011-02-02 独立行政法人産業技術総合研究所 乱数発生器
WO2008154519A1 (en) * 2007-06-12 2008-12-18 Grandis, Inc. Method and system for providing a magnetic element and magnetic memory being unidirectional writing enabled
US7688616B2 (en) * 2007-06-18 2010-03-30 Taiwan Semicondcutor Manufacturing Company, Ltd. Device and method of programming a magnetic memory element
US7957179B2 (en) * 2007-06-27 2011-06-07 Grandis Inc. Magnetic shielding in magnetic multilayer structures
FR2918761B1 (fr) * 2007-07-10 2009-11-06 Commissariat Energie Atomique Capteur de champ magnetique a faible bruit.
FR2918762B1 (fr) * 2007-07-10 2010-03-19 Commissariat Energie Atomique Capteur de champ magnetique a faible bruit utilisant un transfert de spin lateral.
JP4874884B2 (ja) * 2007-07-11 2012-02-15 株式会社東芝 磁気記録素子及び磁気記録装置
US7982275B2 (en) * 2007-08-22 2011-07-19 Grandis Inc. Magnetic element having low saturation magnetization
US9812184B2 (en) 2007-10-31 2017-11-07 New York University Current induced spin-momentum transfer stack with dual insulating layers
WO2009074411A1 (en) 2007-12-13 2009-06-18 Crocus Technology Magnetic memory with a thermally assisted writing procedure
JP2009158877A (ja) 2007-12-28 2009-07-16 Hitachi Ltd 磁気メモリセル及びランダムアクセスメモリ
US8013406B2 (en) * 2008-01-02 2011-09-06 The Hong Kong University Of Science And Technology Method and apparatus for generating giant spin-dependent chemical potential difference in non-magnetic materials
US7919794B2 (en) * 2008-01-08 2011-04-05 Qualcomm, Incorporated Memory cell and method of forming a magnetic tunnel junction (MTJ) of a memory cell
JP5283922B2 (ja) * 2008-02-14 2013-09-04 株式会社東芝 磁気メモリ
JP5455313B2 (ja) * 2008-02-21 2014-03-26 株式会社東芝 磁気記憶素子及び磁気記憶装置
US8802451B2 (en) 2008-02-29 2014-08-12 Avalanche Technology Inc. Method for manufacturing high density non-volatile magnetic memory
ATE538474T1 (de) 2008-04-07 2012-01-15 Crocus Technology Sa System und verfahren zum schreiben von daten auf magnetoresistive direktzugriffsspeicherzellen
US8659852B2 (en) 2008-04-21 2014-02-25 Seagate Technology Llc Write-once magentic junction memory array
FR2931011B1 (fr) * 2008-05-06 2010-05-28 Commissariat Energie Atomique Element magnetique a ecriture assistee thermiquement
EP2124228B1 (de) 2008-05-20 2014-03-05 Crocus Technology Magnetischer Direktzugriffsspeicher mit einem elliptischen Tunnelübergang
US7855911B2 (en) 2008-05-23 2010-12-21 Seagate Technology Llc Reconfigurable magnetic logic device using spin torque
JP5339272B2 (ja) 2008-06-05 2013-11-13 国立大学法人東北大学 スピントロニクスデバイス及び情報伝達方法
US8031519B2 (en) 2008-06-18 2011-10-04 Crocus Technology S.A. Shared line magnetic random access memory cells
US8274818B2 (en) 2008-08-05 2012-09-25 Tohoku University Magnetoresistive element, magnetic memory cell and magnetic random access memory using the same
US7881098B2 (en) 2008-08-26 2011-02-01 Seagate Technology Llc Memory with separate read and write paths
US7894248B2 (en) * 2008-09-12 2011-02-22 Grandis Inc. Programmable and redundant circuitry based on magnetic tunnel junction (MTJ)
EP2328194A4 (de) * 2008-09-22 2013-07-10 Hitachi Ltd Magnetisches aufzeichnungselement, magnetische speicherzelle und magnetischer ram-speicher
US7985994B2 (en) 2008-09-29 2011-07-26 Seagate Technology Llc Flux-closed STRAM with electronically reflective insulative spacer
US8169810B2 (en) 2008-10-08 2012-05-01 Seagate Technology Llc Magnetic memory with asymmetric energy barrier
US7880209B2 (en) * 2008-10-09 2011-02-01 Seagate Technology Llc MRAM cells including coupled free ferromagnetic layers for stabilization
US8039913B2 (en) 2008-10-09 2011-10-18 Seagate Technology Llc Magnetic stack with laminated layer
US8089132B2 (en) * 2008-10-09 2012-01-03 Seagate Technology Llc Magnetic memory with phonon glass electron crystal material
US8228703B2 (en) 2008-11-04 2012-07-24 Crocus Technology Sa Ternary Content Addressable Magnetoresistive random access memory cell
US8043732B2 (en) 2008-11-11 2011-10-25 Seagate Technology Llc Memory cell with radial barrier
US7826181B2 (en) 2008-11-12 2010-11-02 Seagate Technology Llc Magnetic memory with porous non-conductive current confinement layer
KR101255474B1 (ko) 2008-12-10 2013-04-16 가부시키가이샤 히타치세이사쿠쇼 자기 저항 효과 소자, 그것을 이용한 자기 메모리 셀 및 자기 랜덤 액세스 메모리
US8344433B2 (en) * 2009-04-14 2013-01-01 Qualcomm Incorporated Magnetic tunnel junction (MTJ) and methods, and magnetic random access memory (MRAM) employing same
EP2249349B1 (de) * 2009-05-08 2012-02-08 Crocus Technology Magnetischer Speicher mit wärmeunterstütztem Schreibverfahren und eingeschränktem Schreibfeld
EP2249350B1 (de) 2009-05-08 2012-02-01 Crocus Technology Magnetischer Speicher mit wärmeunterstütztem Schreibverfahren und niedrigem Schreibstrom
US8218349B2 (en) 2009-05-26 2012-07-10 Crocus Technology Sa Non-volatile logic devices using magnetic tunnel junctions
US7999338B2 (en) 2009-07-13 2011-08-16 Seagate Technology Llc Magnetic stack having reference layers with orthogonal magnetization orientation directions
US8102703B2 (en) 2009-07-14 2012-01-24 Crocus Technology Magnetic element with a fast spin transfer torque writing procedure
US8913350B2 (en) * 2009-08-10 2014-12-16 Grandis, Inc. Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements
US20110031569A1 (en) * 2009-08-10 2011-02-10 Grandis, Inc. Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements
US10446209B2 (en) * 2009-08-10 2019-10-15 Samsung Semiconductor Inc. Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements
US8385106B2 (en) * 2009-09-11 2013-02-26 Grandis, Inc. Method and system for providing a hierarchical data path for spin transfer torque random access memory
US8422285B2 (en) * 2009-10-30 2013-04-16 Grandis, Inc. Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories
US8159866B2 (en) * 2009-10-30 2012-04-17 Grandis, Inc. Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories
US20110141802A1 (en) * 2009-12-15 2011-06-16 Grandis, Inc. Method and system for providing a high density memory cell for spin transfer torque random access memory
US8199553B2 (en) * 2009-12-17 2012-06-12 Hitachi Global Storage Technologies Netherlands B.V. Multilevel frequency addressable field driven MRAM
US8063460B2 (en) * 2009-12-18 2011-11-22 Intel Corporation Spin torque magnetic integrated circuits and devices therefor
US9130151B2 (en) 2010-01-11 2015-09-08 Samsung Electronics Co., Ltd. Method and system for providing magnetic tunneling junctions usable in spin transfer torque magnetic memories
US8254162B2 (en) 2010-01-11 2012-08-28 Grandis, Inc. Method and system for providing magnetic tunneling junctions usable in spin transfer torque magnetic memories
JP4903277B2 (ja) 2010-01-26 2012-03-28 株式会社日立製作所 磁気抵抗効果素子、それを用いた磁気メモリセル及びランダムアクセスメモリ
JP5461683B2 (ja) * 2010-03-05 2014-04-02 株式会社日立製作所 磁気メモリセル及び磁気ランダムアクセスメモリ
US8891290B2 (en) 2010-03-17 2014-11-18 Samsung Electronics Co., Ltd. Method and system for providing inverted dual magnetic tunneling junction elements
US8411497B2 (en) 2010-05-05 2013-04-02 Grandis, Inc. Method and system for providing a magnetic field aligned spin transfer torque random access memory
US8546896B2 (en) 2010-07-16 2013-10-01 Grandis, Inc. Magnetic tunneling junction elements having magnetic substructures(s) with a perpendicular anisotropy and memories using such magnetic elements
US8374048B2 (en) 2010-08-11 2013-02-12 Grandis, Inc. Method and system for providing magnetic tunneling junction elements having a biaxial anisotropy
FR2964248B1 (fr) 2010-09-01 2013-07-19 Commissariat Energie Atomique Dispositif magnetique et procede de lecture et d’ecriture dans un tel dispositif magnetique
JP5742142B2 (ja) * 2010-09-08 2015-07-01 ソニー株式会社 記憶素子、メモリ装置
FR2965654B1 (fr) 2010-10-01 2012-10-19 Commissariat Energie Atomique Dispositif magnetique a ecriture assistee thermiquement
US8399941B2 (en) 2010-11-05 2013-03-19 Grandis, Inc. Magnetic junction elements having an easy cone anisotropy and a magnetic memory using such magnetic junction elements
US8796794B2 (en) 2010-12-17 2014-08-05 Intel Corporation Write current reduction in spin transfer torque memory devices
US8432009B2 (en) 2010-12-31 2013-04-30 Grandis, Inc. Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories
US9478730B2 (en) 2010-12-31 2016-10-25 Samsung Electronics Co., Ltd. Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories
EP2477227B1 (de) 2011-01-13 2019-03-27 Crocus Technology S.A. Magnettunnelübergang mit einer Polarisierungsschicht
JP5686626B2 (ja) * 2011-02-22 2015-03-18 ルネサスエレクトロニクス株式会社 磁気メモリ及びその製造方法
FR2976113B1 (fr) 2011-06-06 2013-07-12 Commissariat Energie Atomique Dispositif magnetique a couplage d'echange
FR2976396B1 (fr) 2011-06-07 2013-07-12 Commissariat Energie Atomique Empilement magnetique et point memoire comportant un tel empilement
US8766383B2 (en) 2011-07-07 2014-07-01 Samsung Electronics Co., Ltd. Method and system for providing a magnetic junction using half metallic ferromagnets
JP2012028798A (ja) * 2011-09-14 2012-02-09 Sony Corp メモリ
US8570792B2 (en) * 2012-01-24 2013-10-29 Taiwan Semiconductor Manufacturing Co., Ltd. Magnetoresistive random access memory
US8884386B2 (en) 2012-02-02 2014-11-11 Taiwan Semiconductor Manufacturing Company, Ltd. MRAM device and fabrication method thereof
US9007818B2 (en) 2012-03-22 2015-04-14 Micron Technology, Inc. Memory cells, semiconductor device structures, systems including such cells, and methods of fabrication
FR2989211B1 (fr) 2012-04-10 2014-09-26 Commissariat Energie Atomique Dispositif magnetique a ecriture assistee thermiquement
US9054030B2 (en) 2012-06-19 2015-06-09 Micron Technology, Inc. Memory cells, semiconductor device structures, memory systems, and methods of fabrication
US8923038B2 (en) 2012-06-19 2014-12-30 Micron Technology, Inc. Memory cells, semiconductor device structures, memory systems, and methods of fabrication
FR2993387B1 (fr) 2012-07-11 2014-08-08 Commissariat Energie Atomique Dispositif magnetique a ecriture assistee thermiquement
US9082950B2 (en) 2012-10-17 2015-07-14 New York University Increased magnetoresistance in an inverted orthogonal spin transfer layer stack
US9082888B2 (en) 2012-10-17 2015-07-14 New York University Inverted orthogonal spin transfer layer stack
US8879205B2 (en) 2012-11-13 2014-11-04 HGST Netherlands B.V. High spin-torque efficiency spin-torque oscillator (STO) with dual spin polarization layer
KR102199622B1 (ko) * 2013-01-11 2021-01-08 삼성전자주식회사 용이 콘 이방성을 가지는 자기 터널 접합 소자들을 제공하는 방법 및 시스템
US9379315B2 (en) 2013-03-12 2016-06-28 Micron Technology, Inc. Memory cells, methods of fabrication, semiconductor device structures, and memory systems
JP6078643B2 (ja) * 2013-05-22 2017-02-08 株式会社日立製作所 スピン波デバイス
US8982613B2 (en) 2013-06-17 2015-03-17 New York University Scalable orthogonal spin transfer magnetic random access memory devices with reduced write error rates
US9368714B2 (en) 2013-07-01 2016-06-14 Micron Technology, Inc. Memory cells, methods of operation and fabrication, semiconductor device structures, and memory systems
US9466787B2 (en) 2013-07-23 2016-10-11 Micron Technology, Inc. Memory cells, methods of fabrication, semiconductor device structures, memory systems, and electronic systems
US9461242B2 (en) 2013-09-13 2016-10-04 Micron Technology, Inc. Magnetic memory cells, methods of fabrication, semiconductor devices, memory systems, and electronic systems
US9608197B2 (en) 2013-09-18 2017-03-28 Micron Technology, Inc. Memory cells, methods of fabrication, and semiconductor devices
US9529060B2 (en) 2014-01-09 2016-12-27 Allegro Microsystems, Llc Magnetoresistance element with improved response to magnetic fields
US10454024B2 (en) 2014-02-28 2019-10-22 Micron Technology, Inc. Memory cells, methods of fabrication, and memory devices
US9281466B2 (en) 2014-04-09 2016-03-08 Micron Technology, Inc. Memory cells, semiconductor structures, semiconductor devices, and methods of fabrication
US9269888B2 (en) 2014-04-18 2016-02-23 Micron Technology, Inc. Memory cells, methods of fabrication, and semiconductor devices
US9263667B1 (en) 2014-07-25 2016-02-16 Spin Transfer Technologies, Inc. Method for manufacturing MTJ memory device
US9337412B2 (en) * 2014-09-22 2016-05-10 Spin Transfer Technologies, Inc. Magnetic tunnel junction structure for MRAM device
US9349945B2 (en) 2014-10-16 2016-05-24 Micron Technology, Inc. Memory cells, semiconductor devices, and methods of fabrication
US9768377B2 (en) 2014-12-02 2017-09-19 Micron Technology, Inc. Magnetic cell structures, and methods of fabrication
US10439131B2 (en) 2015-01-15 2019-10-08 Micron Technology, Inc. Methods of forming semiconductor devices including tunnel barrier materials
US9502642B2 (en) 2015-04-10 2016-11-22 Micron Technology, Inc. Magnetic tunnel junctions, methods used while forming magnetic tunnel junctions, and methods of forming magnetic tunnel junctions
US9530959B2 (en) 2015-04-15 2016-12-27 Micron Technology, Inc. Magnetic tunnel junctions
US9520553B2 (en) 2015-04-15 2016-12-13 Micron Technology, Inc. Methods of forming a magnetic electrode of a magnetic tunnel junction and methods of forming a magnetic tunnel junction
US10468590B2 (en) 2015-04-21 2019-11-05 Spin Memory, Inc. High annealing temperature perpendicular magnetic anisotropy structure for magnetic random access memory
US9728712B2 (en) 2015-04-21 2017-08-08 Spin Transfer Technologies, Inc. Spin transfer torque structure for MRAM devices having a spin current injection capping layer
US9257136B1 (en) 2015-05-05 2016-02-09 Micron Technology, Inc. Magnetic tunnel junctions
US9960346B2 (en) 2015-05-07 2018-05-01 Micron Technology, Inc. Magnetic tunnel junctions
US9812637B2 (en) 2015-06-05 2017-11-07 Allegro Microsystems, Llc Spin valve magnetoresistance element with improved response to magnetic fields
US9853206B2 (en) 2015-06-16 2017-12-26 Spin Transfer Technologies, Inc. Precessional spin current structure for MRAM
US9773974B2 (en) 2015-07-30 2017-09-26 Spin Transfer Technologies, Inc. Polishing stop layer(s) for processing arrays of semiconductor elements
US10163479B2 (en) 2015-08-14 2018-12-25 Spin Transfer Technologies, Inc. Method and apparatus for bipolar memory write-verify
US10573363B2 (en) 2015-12-02 2020-02-25 Samsung Electronics Co., Ltd. Method and apparatus for performing self-referenced read in a magnetoresistive random access memory
US9741926B1 (en) 2016-01-28 2017-08-22 Spin Transfer Technologies, Inc. Memory cell having magnetic tunnel junction and thermal stability enhancement layer
JP2017139399A (ja) * 2016-02-05 2017-08-10 Tdk株式会社 磁気メモリ
US9680089B1 (en) 2016-05-13 2017-06-13 Micron Technology, Inc. Magnetic tunnel junctions
US10446210B2 (en) 2016-09-27 2019-10-15 Spin Memory, Inc. Memory instruction pipeline with a pre-read stage for a write operation for reducing power consumption in a memory device that uses dynamic redundancy registers
US10991410B2 (en) 2016-09-27 2021-04-27 Spin Memory, Inc. Bi-polar write scheme
US11119910B2 (en) 2016-09-27 2021-09-14 Spin Memory, Inc. Heuristics for selecting subsegments for entry in and entry out operations in an error cache system with coarse and fine grain segments
US10818331B2 (en) 2016-09-27 2020-10-27 Spin Memory, Inc. Multi-chip module for MRAM devices with levels of dynamic redundancy registers
US11151042B2 (en) 2016-09-27 2021-10-19 Integrated Silicon Solution, (Cayman) Inc. Error cache segmentation for power reduction
US10437723B2 (en) 2016-09-27 2019-10-08 Spin Memory, Inc. Method of flushing the contents of a dynamic redundancy register to a secure storage area during a power down in a memory device
US10366774B2 (en) 2016-09-27 2019-07-30 Spin Memory, Inc. Device with dynamic redundancy registers
US10460781B2 (en) 2016-09-27 2019-10-29 Spin Memory, Inc. Memory device with a dual Y-multiplexer structure for performing two simultaneous operations on the same row of a memory bank
US10546625B2 (en) 2016-09-27 2020-01-28 Spin Memory, Inc. Method of optimizing write voltage based on error buffer occupancy
US10628316B2 (en) 2016-09-27 2020-04-21 Spin Memory, Inc. Memory device with a plurality of memory banks where each memory bank is associated with a corresponding memory instruction pipeline and a dynamic redundancy register
US10437491B2 (en) 2016-09-27 2019-10-08 Spin Memory, Inc. Method of processing incomplete memory operations in a memory device during a power up sequence and a power down sequence using a dynamic redundancy register
US11119936B2 (en) 2016-09-27 2021-09-14 Spin Memory, Inc. Error cache system with coarse and fine segments for power optimization
US10360964B2 (en) 2016-09-27 2019-07-23 Spin Memory, Inc. Method of writing contents in memory during a power up sequence using a dynamic redundancy register in a memory device
US10665777B2 (en) 2017-02-28 2020-05-26 Spin Memory, Inc. Precessional spin current structure with non-magnetic insertion layer for MRAM
US10672976B2 (en) 2017-02-28 2020-06-02 Spin Memory, Inc. Precessional spin current structure with high in-plane magnetization for MRAM
US10620279B2 (en) 2017-05-19 2020-04-14 Allegro Microsystems, Llc Magnetoresistance element with increased operational range
US11022661B2 (en) 2017-05-19 2021-06-01 Allegro Microsystems, Llc Magnetoresistance element with increased operational range
US10032978B1 (en) 2017-06-27 2018-07-24 Spin Transfer Technologies, Inc. MRAM with reduced stray magnetic fields
US10656994B2 (en) 2017-10-24 2020-05-19 Spin Memory, Inc. Over-voltage write operation of tunnel magnet-resistance (“TMR”) memory device and correcting failure bits therefrom by using on-the-fly bit failure detection and bit redundancy remapping techniques
US10489245B2 (en) 2017-10-24 2019-11-26 Spin Memory, Inc. Forcing stuck bits, waterfall bits, shunt bits and low TMR bits to short during testing and using on-the-fly bit failure detection and bit redundancy remapping techniques to correct them
US10481976B2 (en) 2017-10-24 2019-11-19 Spin Memory, Inc. Forcing bits as bad to widen the window between the distributions of acceptable high and low resistive bits thereby lowering the margin and increasing the speed of the sense amplifiers
US10529439B2 (en) 2017-10-24 2020-01-07 Spin Memory, Inc. On-the-fly bit failure detection and bit redundancy remapping techniques to correct for fixed bit defects
US10679685B2 (en) 2017-12-27 2020-06-09 Spin Memory, Inc. Shared bit line array architecture for magnetoresistive memory
US10395711B2 (en) 2017-12-28 2019-08-27 Spin Memory, Inc. Perpendicular source and bit lines for an MRAM array
US10516094B2 (en) 2017-12-28 2019-12-24 Spin Memory, Inc. Process for creating dense pillars using multiple exposures for MRAM fabrication
US10811594B2 (en) 2017-12-28 2020-10-20 Spin Memory, Inc. Process for hard mask development for MRAM pillar formation using photolithography
US10891997B2 (en) 2017-12-28 2021-01-12 Spin Memory, Inc. Memory array with horizontal source line and a virtual source line
US10395712B2 (en) 2017-12-28 2019-08-27 Spin Memory, Inc. Memory array with horizontal source line and sacrificial bitline per virtual source
US10360962B1 (en) 2017-12-28 2019-07-23 Spin Memory, Inc. Memory array with individually trimmable sense amplifiers
US10424726B2 (en) 2017-12-28 2019-09-24 Spin Memory, Inc. Process for improving photoresist pillar adhesion during MRAM fabrication
US10367139B2 (en) 2017-12-29 2019-07-30 Spin Memory, Inc. Methods of manufacturing magnetic tunnel junction devices
US10886330B2 (en) 2017-12-29 2021-01-05 Spin Memory, Inc. Memory device having overlapping magnetic tunnel junctions in compliance with a reference pitch
US10784439B2 (en) 2017-12-29 2020-09-22 Spin Memory, Inc. Precessional spin current magnetic tunnel junction devices and methods of manufacture
US10360961B1 (en) 2017-12-29 2019-07-23 Spin Memory, Inc. AC current pre-charge write-assist in orthogonal STT-MRAM
US10424723B2 (en) 2017-12-29 2019-09-24 Spin Memory, Inc. Magnetic tunnel junction devices including an optimization layer
US10236047B1 (en) 2017-12-29 2019-03-19 Spin Memory, Inc. Shared oscillator (STNO) for MRAM array write-assist in orthogonal STT-MRAM
US10236048B1 (en) 2017-12-29 2019-03-19 Spin Memory, Inc. AC current write-assist in orthogonal STT-MRAM
US10546624B2 (en) 2017-12-29 2020-01-28 Spin Memory, Inc. Multi-port random access memory
US10840436B2 (en) 2017-12-29 2020-11-17 Spin Memory, Inc. Perpendicular magnetic anisotropy interface tunnel junction devices and methods of manufacture
US10199083B1 (en) 2017-12-29 2019-02-05 Spin Transfer Technologies, Inc. Three-terminal MRAM with ac write-assist for low read disturb
US10270027B1 (en) 2017-12-29 2019-04-23 Spin Memory, Inc. Self-generating AC current assist in orthogonal STT-MRAM
US10840439B2 (en) 2017-12-29 2020-11-17 Spin Memory, Inc. Magnetic tunnel junction (MTJ) fabrication methods and systems
US10319900B1 (en) 2017-12-30 2019-06-11 Spin Memory, Inc. Perpendicular magnetic tunnel junction device with precessional spin current layer having a modulated moment density
US10229724B1 (en) 2017-12-30 2019-03-12 Spin Memory, Inc. Microwave write-assist in series-interconnected orthogonal STT-MRAM devices
US10339993B1 (en) 2017-12-30 2019-07-02 Spin Memory, Inc. Perpendicular magnetic tunnel junction device with skyrmionic assist layers for free layer switching
US10236439B1 (en) 2017-12-30 2019-03-19 Spin Memory, Inc. Switching and stability control for perpendicular magnetic tunnel junction device
US10141499B1 (en) 2017-12-30 2018-11-27 Spin Transfer Technologies, Inc. Perpendicular magnetic tunnel junction device with offset precessional spin current layer
US10255962B1 (en) 2017-12-30 2019-04-09 Spin Memory, Inc. Microwave write-assist in orthogonal STT-MRAM
US10468588B2 (en) 2018-01-05 2019-11-05 Spin Memory, Inc. Perpendicular magnetic tunnel junction device with skyrmionic enhancement layers for the precessional spin current magnetic layer
US10438995B2 (en) 2018-01-08 2019-10-08 Spin Memory, Inc. Devices including magnetic tunnel junctions integrated with selectors
US10438996B2 (en) 2018-01-08 2019-10-08 Spin Memory, Inc. Methods of fabricating magnetic tunnel junctions integrated with selectors
US10388861B1 (en) 2018-03-08 2019-08-20 Spin Memory, Inc. Magnetic tunnel junction wafer adaptor used in magnetic annealing furnace and method of using the same
US10446744B2 (en) 2018-03-08 2019-10-15 Spin Memory, Inc. Magnetic tunnel junction wafer adaptor used in magnetic annealing furnace and method of using the same
US20190296220A1 (en) 2018-03-23 2019-09-26 Spin Transfer Technologies, Inc. Magnetic Tunnel Junction Devices Including an Annular Free Magnetic Layer and a Planar Reference Magnetic Layer
US11107974B2 (en) 2018-03-23 2021-08-31 Spin Memory, Inc. Magnetic tunnel junction devices including a free magnetic trench layer and a planar reference magnetic layer
US11107978B2 (en) 2018-03-23 2021-08-31 Spin Memory, Inc. Methods of manufacturing three-dimensional arrays with MTJ devices including a free magnetic trench layer and a planar reference magnetic layer
US10784437B2 (en) 2018-03-23 2020-09-22 Spin Memory, Inc. Three-dimensional arrays with MTJ devices including a free magnetic trench layer and a planar reference magnetic layer
US10411185B1 (en) 2018-05-30 2019-09-10 Spin Memory, Inc. Process for creating a high density magnetic tunnel junction array test platform
US10593396B2 (en) 2018-07-06 2020-03-17 Spin Memory, Inc. Multi-bit cell read-out techniques for MRAM cells with mixed pinned magnetization orientations
US10559338B2 (en) 2018-07-06 2020-02-11 Spin Memory, Inc. Multi-bit cell read-out techniques
US10692569B2 (en) 2018-07-06 2020-06-23 Spin Memory, Inc. Read-out techniques for multi-bit cells
US10600478B2 (en) 2018-07-06 2020-03-24 Spin Memory, Inc. Multi-bit cell read-out techniques for MRAM cells with mixed pinned magnetization orientations
US11193989B2 (en) 2018-07-27 2021-12-07 Allegro Microsystems, Llc Magnetoresistance assembly having a TMR element disposed over or under a GMR element
US10650875B2 (en) 2018-08-21 2020-05-12 Spin Memory, Inc. System for a wide temperature range nonvolatile memory
US10699761B2 (en) 2018-09-18 2020-06-30 Spin Memory, Inc. Word line decoder memory architecture
US11621293B2 (en) 2018-10-01 2023-04-04 Integrated Silicon Solution, (Cayman) Inc. Multi terminal device stack systems and methods
US10971680B2 (en) 2018-10-01 2021-04-06 Spin Memory, Inc. Multi terminal device stack formation methods
US10580827B1 (en) 2018-11-16 2020-03-03 Spin Memory, Inc. Adjustable stabilizer/polarizer method for MRAM with enhanced stability and efficient switching
US11107979B2 (en) 2018-12-28 2021-08-31 Spin Memory, Inc. Patterned silicide structures and methods of manufacture
US11719771B1 (en) 2022-06-02 2023-08-08 Allegro Microsystems, Llc Magnetoresistive sensor having seed layer hysteresis suppression
CN116096210A (zh) * 2023-01-09 2023-05-09 苏州凌存科技有限公司 一种磁性多层膜及磁性存储器

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4243358A1 (de) * 1992-12-21 1994-06-23 Siemens Ag Magnetowiderstands-Sensor mit künstlichem Antiferromagneten und Verfahren zu seiner Herstellung
US5477482A (en) * 1993-10-01 1995-12-19 The United States Of America As Represented By The Secretary Of The Navy Ultra high density, non-volatile ferromagnetic random access memory
US5541868A (en) * 1995-02-21 1996-07-30 The United States Of America As Represented By The Secretary Of The Navy Annular GMR-based memory element
US5695864A (en) * 1995-09-28 1997-12-09 International Business Machines Corporation Electronic device using magnetic components
US5640343A (en) * 1996-03-18 1997-06-17 International Business Machines Corporation Magnetic memory array using magnetic tunnel junction devices in the memory cells
JP4066477B2 (ja) * 1997-10-09 2008-03-26 ソニー株式会社 不揮発性ランダムアクセスメモリー装置
US5966323A (en) * 1997-12-18 1999-10-12 Motorola, Inc. Low switching field magnetoresistive tunneling junction for high density arrays
US5959880A (en) * 1997-12-18 1999-09-28 Motorola, Inc. Low aspect ratio magnetoresistive tunneling junction
FR2774774B1 (fr) * 1998-02-11 2000-03-03 Commissariat Energie Atomique Magnetoresistance a effet tunnel et capteur magnetique utilisant une telle magnetoresistance
US5953248A (en) * 1998-07-20 1999-09-14 Motorola, Inc. Low switching field magnetic tunneling junction for high density arrays
US6055178A (en) * 1998-12-18 2000-04-25 Motorola, Inc. Magnetic random access memory with a reference memory array
JP2001156357A (ja) * 1999-09-16 2001-06-08 Toshiba Corp 磁気抵抗効果素子および磁気記録素子
JP2001196661A (ja) * 1999-10-27 2001-07-19 Sony Corp 磁化制御方法、情報記憶方法、磁気機能素子および情報記憶素子
US6473336B2 (en) * 1999-12-16 2002-10-29 Kabushiki Kaisha Toshiba Magnetic memory device
EP1187103A3 (de) * 2000-08-04 2003-01-08 Matsushita Electric Industrial Co., Ltd. Magnetowiderstandsbauteil, Kopf und Speicherelement

Also Published As

Publication number Publication date
JP4398127B2 (ja) 2010-01-13
JP5148566B2 (ja) 2013-02-20
JP2002305337A (ja) 2002-10-18
JP2009239317A (ja) 2009-10-15
EP1223585B1 (de) 2008-04-16
US6603677B2 (en) 2003-08-05
EP1223585A1 (de) 2002-07-17
FR2817999B1 (fr) 2003-01-10
US20020105827A1 (en) 2002-08-08
DE60133622T2 (de) 2009-06-10
FR2817999A1 (fr) 2002-06-14

Similar Documents

Publication Publication Date Title
DE60133622D1 (de) Spin polarisierte magnetische dreischichtige Stapelanordnung und Speicher unter Verwendung einer solchen
DE60133623D1 (de) Magnetische Anordnung basiert auf Spinpolarisierung und Rotationsmagnetisierung, Speicher und Schreibverfahren unter Verwendung einer solcher
DE60022616D1 (de) Magnetischer Speicher
DE69930129D1 (de) Mram speicher mit mehreren speicherbanken
DE69835475D1 (de) Magnetisches Dünnfilmspeicherelement unter Verwendung des GMR-Effekts und magnetischer Dünnfilmspeicher
DE60142756D1 (de) Multiportspeicher auf Basis von mehreren Speicherkernen
DE60037784D1 (de) Magnetoresistives Element und magnetische Speicheranordnung
DE59912387D1 (de) Magnetischer Speicher
DE60042554D1 (de) Rotoranordnung mit supraleitender Magnetspule
DE60021997D1 (de) Magnetischer MRAM Speicher mit einer darin integrierten Halbleiteranordnung
DE50109269D1 (de) Mikrokapseln mit Wänden aus Polyharnstoff
DE50112149D1 (de) MRAM-Anordnung
DE69942373D1 (de) Eisenreiches magnetostriktives element mit optimierter polarisationsfeldabhängiger resonanzfrequenzcharakteristik
DE50110390D1 (de) Mikrokapseln mit Wänden aus Polyharnstoff
DE60223440D1 (de) Magnetoresistives Element, Speicherelement mit solchem magnetoresistivem Element, und Speicher unter Verwendung eines solchen Speicherelements
DE60126953D1 (de) Magnetische aufzeichnungsmittel mit antiferromagnetischer kupplung
DE69826737D1 (de) Magnetisches Speichergerät mit magnetoresistivem Element
DE60132512D1 (de) Ferroelektrischer Speicher
SE0001901D0 (sv) Arrangemang utnyttjande en magnetisk attraktionskraft?
DE60142282D1 (de) Formierung von umkehrbaren gelen
DE10195791T1 (de) Solenoid
DE50103961D1 (de) Magnetische lagerung
DE60040203D1 (de) Ferromagnetisches doppelquantentopf-tunnelmagnetwiderstandsbauelement
ITTO20001128A0 (it) Induttore planare con nucleo ferromagnetico e relativo metodo di fabbricazione.
DE50005975D1 (de) Magnetventil

Legal Events

Date Code Title Description
8364 No opposition during term of opposition