DE60223440D1 - Magnetoresistives Element, Speicherelement mit solchem magnetoresistivem Element, und Speicher unter Verwendung eines solchen Speicherelements - Google Patents

Magnetoresistives Element, Speicherelement mit solchem magnetoresistivem Element, und Speicher unter Verwendung eines solchen Speicherelements

Info

Publication number
DE60223440D1
DE60223440D1 DE60223440T DE60223440T DE60223440D1 DE 60223440 D1 DE60223440 D1 DE 60223440D1 DE 60223440 T DE60223440 T DE 60223440T DE 60223440 T DE60223440 T DE 60223440T DE 60223440 D1 DE60223440 D1 DE 60223440D1
Authority
DE
Germany
Prior art keywords
memory
magnetoresistive
magnetoresistive element
memory element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60223440T
Other languages
English (en)
Other versions
DE60223440T2 (de
Inventor
Takashi Ikeda
Akio Koganei
Kazuhisa Okano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2001103185A external-priority patent/JP2002299727A/ja
Priority claimed from JP2001245423A external-priority patent/JP4944315B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE60223440D1 publication Critical patent/DE60223440D1/de
Publication of DE60223440T2 publication Critical patent/DE60223440T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1107—Magnetoresistive
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1107—Magnetoresistive
    • Y10T428/1121—Multilayer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1107—Magnetoresistive
    • Y10T428/1143—Magnetoresistive with defined structural feature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12465—All metal or with adjacent metals having magnetic properties, or preformed fiber orientation coordinate with shape
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12986—Adjacent functionally defined components
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
  • Thin Magnetic Films (AREA)
DE60223440T 2001-04-02 2002-04-02 Magnetoresistives Element, Speicherelement mit solchem magnetoresistivem Element, und Speicher unter Verwendung eines solchen Speicherelements Expired - Lifetime DE60223440T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2001103185 2001-04-02
JP2001103185A JP2002299727A (ja) 2001-04-02 2001-04-02 磁性素子、トンネル磁気抵抗効果素子及びその製造方法
JP2001245423 2001-08-13
JP2001245423A JP4944315B2 (ja) 2001-08-13 2001-08-13 磁気抵抗効果膜、それを備えたメモリ素子及びそれを用いたメモリ

Publications (2)

Publication Number Publication Date
DE60223440D1 true DE60223440D1 (de) 2007-12-27
DE60223440T2 DE60223440T2 (de) 2008-09-04

Family

ID=26612947

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60223440T Expired - Lifetime DE60223440T2 (de) 2001-04-02 2002-04-02 Magnetoresistives Element, Speicherelement mit solchem magnetoresistivem Element, und Speicher unter Verwendung eines solchen Speicherelements

Country Status (6)

Country Link
US (1) US6829121B2 (de)
EP (1) EP1248264B1 (de)
KR (1) KR100498998B1 (de)
CN (1) CN1384503B (de)
DE (1) DE60223440T2 (de)
TW (1) TW560095B (de)

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US7035138B2 (en) * 2000-09-27 2006-04-25 Canon Kabushiki Kaisha Magnetic random access memory having perpendicular magnetic films switched by magnetic fields from a plurality of directions
JP2003242771A (ja) * 2002-02-15 2003-08-29 Toshiba Corp 半導体記憶装置
US6794695B2 (en) * 2002-04-29 2004-09-21 Hewlett-Packard Development Company, L.P. Magneto resistive storage device having a magnetic field sink layer
KR20040084095A (ko) * 2003-03-26 2004-10-06 주식회사 하이닉스반도체 마그네틱 램의 형성방법
JP2004363527A (ja) * 2003-04-11 2004-12-24 Toshiba Corp 磁気記憶装置、データ複写装置、データ複写システム、データ複写プログラム、及びデータ複写方法
JP4128938B2 (ja) * 2003-10-28 2008-07-30 株式会社日立製作所 磁気ヘッド及び磁気記録再生装置
US7180715B2 (en) * 2004-02-26 2007-02-20 Hitachi Global Storage Technologies Netherlands B.V. Canted easy axis in self-pinned layers
KR100694170B1 (ko) * 2004-05-24 2007-03-12 충남대학교산학협력단 이온 빔 조사에 의한 교환 바이어스 특성 향상 방법
JP4134080B2 (ja) * 2005-04-04 2008-08-13 Ｔｄｋ株式会社 磁気抵抗効果素子およびその製造方法、ならびに磁気抵抗効果装置、薄膜磁気ヘッド、ヘッドジンバルアセンブリ、ヘッドアームアセンブリおよび磁気ディスク装置
US7502253B2 (en) * 2006-08-28 2009-03-10 Everspin Technologies, Inc. Spin-transfer based MRAM with reduced critical current density
US20090218645A1 (en) * 2007-02-12 2009-09-03 Yadav Technology Inc. multi-state spin-torque transfer magnetic random access memory
JP5201885B2 (ja) * 2007-06-19 2013-06-05 キヤノン株式会社 磁性物質の検出装置及び検出方法
US20090303779A1 (en) * 2008-06-05 2009-12-10 Young-Shying Chen Spin Torque Transfer MTJ Devices with High Thermal Stability and Low Write Currents
KR101145346B1 (ko) * 2008-11-27 2012-05-14 고려대학교 산학협력단 자기 정보 처리 장치 및 그 제조 방법
JP5502627B2 (ja) * 2010-07-09 2014-05-28 株式会社東芝 磁気ランダムアクセスメモリ及びその製造方法
JP5214691B2 (ja) 2010-09-17 2013-06-19 株式会社東芝 磁気メモリ及びその製造方法
JP5535161B2 (ja) 2011-09-20 2014-07-02 株式会社東芝 磁気抵抗効果素子およびその製造方法
CN103165179B (zh) * 2011-12-14 2015-12-16 北京时代全芯科技有限公司 一种用于相变存储器的快速数据读取电路
US9190167B2 (en) 2013-02-28 2015-11-17 Kabushiki Kaisha Toshiba Shift register and shift register type magnetic memory
US9123879B2 (en) 2013-09-09 2015-09-01 Masahiko Nakayama Magnetoresistive element and method of manufacturing the same
US9385304B2 (en) 2013-09-10 2016-07-05 Kabushiki Kaisha Toshiba Magnetic memory and method of manufacturing the same
US9368717B2 (en) 2013-09-10 2016-06-14 Kabushiki Kaisha Toshiba Magnetoresistive element and method for manufacturing the same
US9231196B2 (en) 2013-09-10 2016-01-05 Kuniaki SUGIURA Magnetoresistive element and method of manufacturing the same
JP6545493B2 (ja) * 2015-03-19 2019-07-17 東芝メモリ株式会社 磁気メモリ素子および磁気メモリ
CN113025954B (zh) * 2021-03-09 2021-12-10 北京科技大学 一种调控铁磁多层膜dm相互作用的方法
CN114156042B (zh) * 2021-11-30 2023-09-12 杭州电子科技大学 一种基于倾斜垂直磁各向异性TbCo薄膜及制备方法

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NL254646A (de) 1959-08-07
JP2646398B2 (ja) * 1989-09-20 1997-08-27 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン 光磁気記録媒体
US5390061A (en) 1990-06-08 1995-02-14 Hitachi, Ltd. Multilayer magnetoresistance effect-type magnetic head
JP3022023B2 (ja) * 1992-04-13 2000-03-15 株式会社日立製作所 磁気記録再生装置
JP2725977B2 (ja) * 1992-08-28 1998-03-11 インターナショナル・ビジネス・マシーンズ・コーポレイション 磁気抵抗センサ及びその製造方法、磁気記憶システム
US5652054A (en) 1994-07-11 1997-07-29 Kabushiki Kaisha Toshiba Magnetic recording media having a magnetic thin film made of magnetic metals grains and nonmagnetic matrix
US5729410A (en) 1996-11-27 1998-03-17 International Business Machines Corporation Magnetic tunnel junction device with longitudinal biasing
JP3679593B2 (ja) 1998-01-28 2005-08-03 キヤノン株式会社 磁性薄膜素子および磁性薄膜メモリ素子およびその記録再生方法
DE19917036C2 (de) * 1999-04-15 2002-11-14 Werner Schmitz Sprossenfenster
JP2001126332A (ja) * 1999-10-21 2001-05-11 Canon Inc 光磁気記録媒体の製造方法
US6205052B1 (en) * 1999-10-21 2001-03-20 Motorola, Inc. Magnetic element with improved field response and fabricating method thereof
RU2169398C1 (ru) * 2000-02-11 2001-06-20 Общество с ограниченной ответственностью "ЛабИНТЕХ" (Лаборатория ионных нанотехнологий) Способ изготовления магнитного носителя
JP3524486B2 (ja) * 2000-10-13 2004-05-10 キヤノン株式会社 磁気抵抗素子及び該素子を用いたメモリ素子
US6798624B2 (en) * 2001-03-15 2004-09-28 Seagate Technology Llc Magnetization sensor for sensing the write field characteristics of a perpendicular or longitudinal recording head

Also Published As

Publication number Publication date
DE60223440T2 (de) 2008-09-04
CN1384503A (zh) 2002-12-11
EP1248264B1 (de) 2007-11-14
CN1384503B (zh) 2010-04-28
TW560095B (en) 2003-11-01
KR20030009095A (ko) 2003-01-29
EP1248264A3 (de) 2004-06-16
US20020182442A1 (en) 2002-12-05
US6829121B2 (en) 2004-12-07
KR100498998B1 (ko) 2005-07-01
EP1248264A2 (de) 2002-10-09

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