DE602004018719D1 - System mit an- und absteckbarem Speicher und entsprechende Kontrollmethode - Google Patents

System mit an- und absteckbarem Speicher und entsprechende Kontrollmethode

Info

Publication number
DE602004018719D1
DE602004018719D1 DE602004018719T DE602004018719T DE602004018719D1 DE 602004018719 D1 DE602004018719 D1 DE 602004018719D1 DE 602004018719 T DE602004018719 T DE 602004018719T DE 602004018719 T DE602004018719 T DE 602004018719T DE 602004018719 D1 DE602004018719 D1 DE 602004018719D1
Authority
DE
Germany
Prior art keywords
dockable
memory
control method
corresponding control
dockable memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602004018719T
Other languages
English (en)
Inventor
Soo-Hwam Choi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE602004018719D1 publication Critical patent/DE602004018719D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/30Power supply circuits
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/14Handling requests for interconnection or transfer
    • G06F13/16Handling requests for interconnection or transfer for access to memory bus
    • G06F13/1668Details of memory controller
    • G06F13/1694Configuration of memory controller to different memory types

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Read Only Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Power Sources (AREA)
DE602004018719T 2003-09-02 2004-09-02 System mit an- und absteckbarem Speicher und entsprechende Kontrollmethode Active DE602004018719D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020030061089A KR100560767B1 (ko) 2003-09-02 2003-09-02 탈착 가능한 저장 장치를 포함하는 시스템 및 그것의 제어방법

Publications (1)

Publication Number Publication Date
DE602004018719D1 true DE602004018719D1 (de) 2009-02-12

Family

ID=34132222

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004018719T Active DE602004018719D1 (de) 2003-09-02 2004-09-02 System mit an- und absteckbarem Speicher und entsprechende Kontrollmethode

Country Status (5)

Country Link
US (1) US7617335B2 (de)
EP (1) EP1513070B1 (de)
JP (1) JP4707352B2 (de)
KR (1) KR100560767B1 (de)
DE (1) DE602004018719D1 (de)

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US7864615B2 (en) * 2005-02-25 2011-01-04 Kingston Technology Corporation Flash memory controller utilizing multiple voltages and a method of use
WO2006117966A1 (ja) * 2005-04-27 2006-11-09 Matsushita Electric Industrial Co., Ltd. カード型電子装置及びホスト装置
US8291295B2 (en) 2005-09-26 2012-10-16 Sandisk Il Ltd. NAND flash memory controller exporting a NAND interface
US7631245B2 (en) * 2005-09-26 2009-12-08 Sandisk Il Ltd. NAND flash memory controller exporting a NAND interface
US7436708B2 (en) * 2006-03-01 2008-10-14 Micron Technology, Inc. NAND memory device column charging
KR100761470B1 (ko) 2006-07-31 2007-09-27 삼성전자주식회사 프로그램 디스터브를 방지할 수 있는 플래시 메모리 장치및 그것의 프로그램 방법
US20080046641A1 (en) * 2006-08-21 2008-02-21 Sandisk Il Ltd. NAND flash memory controller exporting a logical sector-based interface
US20080046630A1 (en) * 2006-08-21 2008-02-21 Sandisk Il Ltd. NAND flash memory controller exporting a logical sector-based interface
US8067861B2 (en) * 2008-02-29 2011-11-29 Panasonic Corporation Interface device for host device, interface device for slave device, host device, slave device, communication system and interface voltage switching method
JP5106219B2 (ja) * 2008-03-19 2012-12-26 株式会社東芝 メモリデバイス、ホストデバイス、メモリシステム、メモリデバイスの制御方法、ホストデバイスの制御方法、およびメモリシステムの制御方法
TW201005535A (en) * 2008-07-17 2010-02-01 Ind Tech Res Inst Electronic apparatus and method for managing a plugged device
US8316201B2 (en) * 2008-12-18 2012-11-20 Sandisk Il Ltd. Methods for executing a command to write data from a source location to a destination location in a memory device
US20110041005A1 (en) * 2009-08-11 2011-02-17 Selinger Robert D Controller and Method for Providing Read Status and Spare Block Management Information in a Flash Memory System
US20110041039A1 (en) * 2009-08-11 2011-02-17 Eliyahou Harari Controller and Method for Interfacing Between a Host Controller in a Host and a Flash Memory Device
US20110040924A1 (en) * 2009-08-11 2011-02-17 Selinger Robert D Controller and Method for Detecting a Transmission Error Over a NAND Interface Using Error Detection Code
US8595411B2 (en) 2009-12-30 2013-11-26 Sandisk Technologies Inc. Method and controller for performing a sequence of commands
US8443263B2 (en) 2009-12-30 2013-05-14 Sandisk Technologies Inc. Method and controller for performing a copy-back operation
CN102375815A (zh) * 2010-08-10 2012-03-14 鸿富锦精密工业(深圳)有限公司 应用于嵌入式设备的三维网络用户接口及其实现方法
CN102023943B (zh) * 2010-11-25 2013-06-19 杭州晟元芯片技术有限公司 一种通过四通道IO接口控制并读写NandFlash的方法
US10235312B2 (en) * 2016-10-07 2019-03-19 Samsung Electronics Co., Ltd. Memory system and host device that maintain compatibility with memory devices under previous standards and/or versions of standards
US12009022B2 (en) * 2022-08-11 2024-06-11 Nanya Technology Corporation Semiconductor device for memory device

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US56063A (en) * 1866-07-03 Improvement in sprinkler and dredger
US5534711A (en) * 1991-01-18 1996-07-09 Energy Conversion Devices, Inc. Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom
JPH0612537A (ja) * 1992-06-25 1994-01-21 Fuji Photo Film Co Ltd Icメモリカード
JP3705842B2 (ja) 1994-08-04 2005-10-12 株式会社ルネサステクノロジ 半導体装置
US5815426A (en) * 1996-08-13 1998-09-29 Nexcom Technology, Inc. Adapter for interfacing an insertable/removable digital memory apparatus to a host data part
JPH10247379A (ja) * 1997-03-04 1998-09-14 Toshiba Corp 半導体メモリカードシステム
JPH1173769A (ja) * 1997-08-27 1999-03-16 Mitsubishi Electric Corp 半導体装置
US6378018B1 (en) 1997-10-10 2002-04-23 Intel Corporation Memory device and system including a low power interface
KR19990084397A (ko) 1998-05-06 1999-12-06 윤종용 내부전압 변환 장치
JP3185875B2 (ja) 1998-08-12 2001-07-11 日本電気株式会社 センスアンプ駆動回路
US6327663B2 (en) * 1998-10-21 2001-12-04 Advanced Micro Devices, Inc. System and method for processor dual voltage detection and over stress protection
JP2001035199A (ja) 1999-07-26 2001-02-09 Mitsubishi Electric Corp 半導体装置
JP2001128443A (ja) * 1999-10-22 2001-05-11 Tdk Corp 電源制御ユニット
AU1801201A (en) 1999-12-08 2001-06-18 Rambus Inc. Memory system with channel multiplexing of multiple memory devices
AU2001251121A1 (en) 2000-03-30 2001-10-15 Micron Technology, Inc. Synchronous flash memory with non-volatile mode register
US20020056063A1 (en) 2000-05-31 2002-05-09 Nerl John A. Power saving feature during memory self-test
AU2002211583A1 (en) * 2000-10-10 2002-04-22 Primarion, Inc. System and method for highly phased power regulation
JP2002342256A (ja) * 2001-05-14 2002-11-29 Hitachi Ltd データプロセッサ及びデータテーブルの更新方法
KR100395770B1 (ko) * 2001-05-23 2003-08-21 삼성전자주식회사 시스템의 부트-업 메모리로서 사용 가능한 불휘발성플래시 메모리 장치 및 그의 동작 방법
US6856556B1 (en) * 2003-04-03 2005-02-15 Siliconsystems, Inc. Storage subsystem with embedded circuit for protecting against anomalies in power signal from host

Also Published As

Publication number Publication date
EP1513070A2 (de) 2005-03-09
US7617335B2 (en) 2009-11-10
KR20050023705A (ko) 2005-03-10
JP4707352B2 (ja) 2011-06-22
KR100560767B1 (ko) 2006-03-13
JP2005078648A (ja) 2005-03-24
EP1513070B1 (de) 2008-12-31
US20050050235A1 (en) 2005-03-03
EP1513070A3 (de) 2005-04-13

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