DE60021997D1 - Magnetischer MRAM Speicher mit einer darin integrierten Halbleiteranordnung - Google Patents

Magnetischer MRAM Speicher mit einer darin integrierten Halbleiteranordnung

Info

Publication number
DE60021997D1
DE60021997D1 DE60021997T DE60021997T DE60021997D1 DE 60021997 D1 DE60021997 D1 DE 60021997D1 DE 60021997 T DE60021997 T DE 60021997T DE 60021997 T DE60021997 T DE 60021997T DE 60021997 D1 DE60021997 D1 DE 60021997D1
Authority
DE
Germany
Prior art keywords
semiconductor device
device integrated
mram memory
magnetic mram
magnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60021997T
Other languages
English (en)
Other versions
DE60021997T2 (de
Inventor
Saied Tehrani
Jing Shi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of DE60021997D1 publication Critical patent/DE60021997D1/de
Application granted granted Critical
Publication of DE60021997T2 publication Critical patent/DE60021997T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/10—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having two electrodes, e.g. diodes or MIM elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Junction Field-Effect Transistors (AREA)
DE60021997T 1999-12-13 2000-12-11 Magnetischer MRAM Speicher mit einer darin integrierten Halbleiteranordnung Expired - Fee Related DE60021997T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/460,056 US6285581B1 (en) 1999-12-13 1999-12-13 MRAM having semiconductor device integrated therein
US460056 1999-12-13

Publications (2)

Publication Number Publication Date
DE60021997D1 true DE60021997D1 (de) 2005-09-22
DE60021997T2 DE60021997T2 (de) 2006-01-26

Family

ID=23827246

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60021997T Expired - Fee Related DE60021997T2 (de) 1999-12-13 2000-12-11 Magnetischer MRAM Speicher mit einer darin integrierten Halbleiteranordnung

Country Status (7)

Country Link
US (1) US6285581B1 (de)
EP (1) EP1109169B1 (de)
JP (1) JP2001203332A (de)
KR (1) KR20010062244A (de)
CN (1) CN1200430C (de)
DE (1) DE60021997T2 (de)
SG (1) SG88806A1 (de)

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JP4491870B2 (ja) * 1999-10-27 2010-06-30 ソニー株式会社 不揮発性メモリの駆動方法
EP1134743A3 (de) * 2000-03-13 2002-04-10 Matsushita Electric Industrial Co., Ltd. Magnetoresistive Anordnung und Speicheranordnung eines magnetoresitiven Effekt Typs
JP3604617B2 (ja) * 2000-06-12 2004-12-22 富士通株式会社 磁気検出素子
US6351409B1 (en) * 2001-01-04 2002-02-26 Motorola, Inc. MRAM write apparatus and method
US6649423B2 (en) * 2001-10-04 2003-11-18 Hewlett-Packard Development Company, L.P. Method for modifying switching field characteristics of magnetic tunnel junctions
US6636436B2 (en) 2001-10-25 2003-10-21 Hewlett-Packard Development Company, L.P. Isolation of memory cells in cross point arrays
US20030229058A1 (en) * 2001-11-13 2003-12-11 Moran Edmund J. Aryl aniline beta2 adrenergic receptor agonists
KR100465598B1 (ko) * 2001-12-26 2005-01-13 주식회사 하이닉스반도체 쇼트키 다이오드를 이용한 마그네틱 램
JP4157707B2 (ja) * 2002-01-16 2008-10-01 株式会社東芝 磁気メモリ
DE10209508B4 (de) * 2002-03-05 2009-01-15 Forschungszentrum Jülich GmbH Verfahren zur Speicherung von Daten in einem MRAM-Datenspeicher
US6927073B2 (en) * 2002-05-16 2005-08-09 Nova Research, Inc. Methods of fabricating magnetoresistive memory devices
JP3643823B2 (ja) 2002-09-30 2005-04-27 株式会社東芝 磁気抵抗効果素子
US6809388B2 (en) * 2002-10-31 2004-10-26 Hewlett-Packard Development Company, L.P. Magnetic sensor based on efficient spin injection into semiconductors
US20040089905A1 (en) * 2002-10-31 2004-05-13 Ossipov Viatcheslav V. Magnetic sensor using spin injection through a semiconductor with a graded doping profile
CN101114694A (zh) * 2002-11-26 2008-01-30 株式会社东芝 磁单元和磁存储器
JP2004179483A (ja) * 2002-11-28 2004-06-24 Hitachi Ltd 不揮発性磁気メモリ
US7528428B2 (en) * 2003-03-07 2009-05-05 Japan Science And Technology Agency Field-effect transistor with spin-dependent transmission characteristics and non-volatile memory using the same
JP2004319587A (ja) * 2003-04-11 2004-11-11 Sharp Corp メモリセル、メモリ装置及びメモリセル製造方法
JP2005109263A (ja) * 2003-09-30 2005-04-21 Toshiba Corp 磁性体素子及磁気メモリ
US6947333B2 (en) * 2003-10-30 2005-09-20 Hewlett-Packard Development Company, L.P. Memory device
DE602005022398D1 (de) * 2004-11-30 2010-09-02 Toshiba Kk Anordnung der Schreiblinien in einer MRAM-Vorrichtung
CN100459149C (zh) * 2005-03-24 2009-02-04 株式会社日立制作所 导电控制器件
EP1934984B1 (de) * 2005-09-30 2011-05-18 Nxp B.V. Nanodraht- magnet-ram
US8183652B2 (en) * 2007-02-12 2012-05-22 Avalanche Technology, Inc. Non-volatile magnetic memory with low switching current and high thermal stability
US20080246104A1 (en) * 2007-02-12 2008-10-09 Yadav Technology High Capacity Low Cost Multi-State Magnetic Memory
US8018011B2 (en) * 2007-02-12 2011-09-13 Avalanche Technology, Inc. Low cost multi-state magnetic memory
US8063459B2 (en) * 2007-02-12 2011-11-22 Avalanche Technologies, Inc. Non-volatile magnetic memory element with graded layer
US8058696B2 (en) * 2006-02-25 2011-11-15 Avalanche Technology, Inc. High capacity low cost multi-state magnetic memory
US8508984B2 (en) * 2006-02-25 2013-08-13 Avalanche Technology, Inc. Low resistance high-TMR magnetic tunnel junction and process for fabrication thereof
US7732881B2 (en) * 2006-11-01 2010-06-08 Avalanche Technology, Inc. Current-confined effect of magnetic nano-current-channel (NCC) for magnetic random access memory (MRAM)
US8535952B2 (en) * 2006-02-25 2013-09-17 Avalanche Technology, Inc. Method for manufacturing non-volatile magnetic memory
US8084835B2 (en) * 2006-10-20 2011-12-27 Avalanche Technology, Inc. Non-uniform switching based non-volatile magnetic based memory
US20070253245A1 (en) * 2006-04-27 2007-11-01 Yadav Technology High Capacity Low Cost Multi-Stacked Cross-Line Magnetic Memory
JP5072392B2 (ja) * 2007-03-08 2012-11-14 株式会社東芝 縦型スピントランジスタ及びその製造方法
JP2009064826A (ja) * 2007-09-04 2009-03-26 Tdk Corp スピントランジスタ及びその製造方法
JP5455313B2 (ja) * 2008-02-21 2014-03-26 株式会社東芝 磁気記憶素子及び磁気記憶装置
WO2009107780A1 (ja) * 2008-02-28 2009-09-03 日本電気株式会社 磁気抵抗記憶装置及びその動作方法
US8802451B2 (en) 2008-02-29 2014-08-12 Avalanche Technology Inc. Method for manufacturing high density non-volatile magnetic memory
JP4908540B2 (ja) 2009-03-25 2012-04-04 株式会社東芝 スピンｍｏｓｆｅｔおよびリコンフィギャラブルロジック回路
US7986572B2 (en) * 2009-08-17 2011-07-26 Magic Technologies, Inc. Magnetic memory capable of minimizing gate voltage stress in unselected memory cells
JP2013089890A (ja) * 2011-10-21 2013-05-13 Toshiba Corp 磁気記憶素子
TWI559450B (zh) * 2014-04-18 2016-11-21 力晶科技股份有限公司 記憶體結構及其操作方法
RU2573200C2 (ru) * 2014-11-20 2016-01-20 Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский университет "Московский институт электронной техники" Магниторезистивная ячейка памяти и способ ее использования
CN109859785B (zh) * 2019-01-11 2020-11-06 中电海康集团有限公司 一种时钟自适应访问mram的装置
WO2020160358A1 (en) * 2019-01-31 2020-08-06 Northwestern University Magnetic memory device using doped semiconductor layer

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US4780848A (en) 1986-06-03 1988-10-25 Honeywell Inc. Magnetoresistive memory with multi-layer storage cells having layers of limited thickness
US5343422A (en) 1993-02-23 1994-08-30 International Business Machines Corporation Nonvolatile magnetoresistive storage device using spin valve effect
DE4320514A1 (de) * 1993-06-22 1995-01-05 Forschungszentrum Juelich Gmbh Neues optisches Schreibverfahren und Schichtsystem für magnetooptische Datenspeicher
US5745408A (en) * 1996-09-09 1998-04-28 Motorola, Inc. Multi-layer magnetic memory cell with low switching current
US5734605A (en) 1996-09-10 1998-03-31 Motorola, Inc. Multi-layer magnetic tunneling junction memory cells
JP3655445B2 (ja) * 1996-09-17 2005-06-02 株式会社東芝 光半導体装置
WO1998025263A1 (en) * 1996-12-02 1998-06-11 Koninklijke Philips Electronics N.V. Lateral magneto-electronic device exploiting a quasi-two-dimensional electron gas
US5774394A (en) * 1997-05-22 1998-06-30 Motorola, Inc. Magnetic memory cell with increased GMR ratio
US5838608A (en) * 1997-06-16 1998-11-17 Motorola, Inc. Multi-layer magnetic random access memory and method for fabricating thereof
US5959880A (en) * 1997-12-18 1999-09-28 Motorola, Inc. Low aspect ratio magnetoresistive tunneling junction
US6069820A (en) * 1998-02-20 2000-05-30 Kabushiki Kaisha Toshiba Spin dependent conduction device
US5943574A (en) 1998-02-23 1999-08-24 Motorola, Inc. Method of fabricating 3D multilayer semiconductor circuits
DE69923386T2 (de) * 1998-05-13 2005-12-22 Sony Corp. Bauelement mit magnetischem Material und Adressierverfahren dafür
JPH11330387A (ja) * 1998-05-13 1999-11-30 Sony Corp 磁化制御方法、情報記録方法及び情報記録素子
JP4076197B2 (ja) * 1999-05-19 2008-04-16 株式会社東芝 磁性素子、記憶装置、磁気再生ヘッド、３端子素子、及び磁気ディスク装置

Also Published As

Publication number Publication date
SG88806A1 (en) 2002-05-21
CN1200430C (zh) 2005-05-04
EP1109169A2 (de) 2001-06-20
EP1109169A3 (de) 2001-09-19
JP2001203332A (ja) 2001-07-27
US6285581B1 (en) 2001-09-04
EP1109169B1 (de) 2005-08-17
KR20010062244A (ko) 2001-07-07
CN1300077A (zh) 2001-06-20
DE60021997T2 (de) 2006-01-26

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: FREESCALE SEMICONDUCTOR, INC., AUSTIN, TEX., US

8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee