DE60000400D1 - Speicher mit eingeblendeter Logikschaltung - Google Patents

Speicher mit eingeblendeter Logikschaltung

Info

Publication number
DE60000400D1
DE60000400D1 DE60000400T DE60000400T DE60000400D1 DE 60000400 D1 DE60000400 D1 DE 60000400D1 DE 60000400 T DE60000400 T DE 60000400T DE 60000400 T DE60000400 T DE 60000400T DE 60000400 D1 DE60000400 D1 DE 60000400D1
Authority
DE
Germany
Prior art keywords
memory
logic circuit
circuit shown
logic
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60000400T
Other languages
English (en)
Other versions
DE60000400T2 (de
Inventor
Hideyuki Noda
Kazutami Arimoto
Katsumi Dosaka
Takeshi Fujino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE60000400D1 publication Critical patent/DE60000400D1/de
Publication of DE60000400T2 publication Critical patent/DE60000400T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/50—Peripheral circuit region structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/18—Bit line organisation; Bit line lay-out

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
DE60000400T 1999-08-30 2000-08-03 Speicher mit eingeblendeter Logikschaltung Expired - Lifetime DE60000400T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24318999A JP4614481B2 (ja) 1999-08-30 1999-08-30 半導体集積回路装置

Publications (2)

Publication Number Publication Date
DE60000400D1 true DE60000400D1 (de) 2002-10-10
DE60000400T2 DE60000400T2 (de) 2003-04-30

Family

ID=17100163

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60000400T Expired - Lifetime DE60000400T2 (de) 1999-08-30 2000-08-03 Speicher mit eingeblendeter Logikschaltung

Country Status (6)

Country Link
US (2) US6649984B1 (de)
EP (1) EP1081715B1 (de)
JP (1) JP4614481B2 (de)
KR (1) KR100388589B1 (de)
DE (1) DE60000400T2 (de)
TW (1) TW463370B (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4614481B2 (ja) * 1999-08-30 2011-01-19 ルネサスエレクトロニクス株式会社 半導体集積回路装置
JP3966718B2 (ja) * 2001-11-28 2007-08-29 富士通株式会社 半導体記憶装置
US7333378B2 (en) * 2002-09-18 2008-02-19 Samsung Electronics Co., Ltd Memory device that recycles a signal charge
KR100482370B1 (ko) 2002-09-27 2005-04-13 삼성전자주식회사 게이트 산화막의 두께가 다른 반도체장치
JP2004178725A (ja) 2002-11-28 2004-06-24 Renesas Technology Corp 半導体記憶装置
DE10319271A1 (de) * 2003-04-29 2004-11-25 Infineon Technologies Ag Speicher-Schaltungsanordnung und Verfahren zur Herstellung
JP2005101466A (ja) 2003-09-26 2005-04-14 Renesas Technology Corp 半導体記憶装置
JP4646106B2 (ja) * 2004-05-25 2011-03-09 株式会社日立製作所 半導体集積回路装置
US7103861B2 (en) * 2004-06-10 2006-09-05 Chartered Semiconductor Manufacturing Ltd. Test structure for automatic dynamic negative-bias temperature instability testing
US7227799B2 (en) * 2005-04-29 2007-06-05 Infineon Technologies Ag Sense amplifier for eliminating leakage current due to bit line shorts
US7355905B2 (en) 2005-07-01 2008-04-08 P.A. Semi, Inc. Integrated circuit with separate supply voltage for memory that is different from logic circuit supply voltage
US7548484B2 (en) * 2005-09-29 2009-06-16 Hynix Semiconductor Inc. Semiconductor memory device having column decoder
JP2007251351A (ja) 2006-03-14 2007-09-27 Renesas Technology Corp 半導体装置
US20080043544A1 (en) * 2006-08-21 2008-02-21 Corvin Liaw Memory device and method of improving the reliability of a memory device
JPWO2010073523A1 (ja) 2008-12-25 2012-06-07 パナソニック株式会社 半導体集積回路
JP5243568B2 (ja) * 2011-02-23 2013-07-24 株式会社半導体理工学研究センター センスアンプ回路
KR20140008099A (ko) * 2012-07-10 2014-01-21 삼성전자주식회사 반도체 메모리 장치
JP6517720B2 (ja) * 2016-03-16 2019-05-22 東芝メモリ株式会社 半導体記憶装置
JP2018049673A (ja) * 2016-09-20 2018-03-29 東芝メモリ株式会社 半導体記憶装置
KR20200079808A (ko) * 2018-12-26 2020-07-06 에스케이하이닉스 주식회사 집적 회로 및 메모리
US11961551B2 (en) 2021-04-09 2024-04-16 Samsung Electronics Co., Ltd. Bitline sense amplifier and a memory device with an equalizer
CN113223973B (zh) * 2021-05-06 2024-08-02 长江先进存储产业创新中心有限责任公司 半导体器件及其制备方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56120166A (en) * 1980-02-27 1981-09-21 Hitachi Ltd Semiconductor ic device and manufacture thereof
US4482985A (en) * 1981-04-17 1984-11-13 Hitachi, Ltd. Semiconductor integrated circuit
JPH03245567A (ja) * 1990-02-23 1991-11-01 Toshiba Corp 半導体装置
US5256892A (en) * 1990-06-29 1993-10-26 Nec Corporation Semiconductor memory device wherein gate electrode thickness is greater in the memory cells than in the peripheral cells
JPH04165670A (ja) * 1990-10-30 1992-06-11 Toshiba Corp 半導体記憶装置とその製造方法
US5610858A (en) * 1994-05-12 1997-03-11 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and method of manufacturing the same
JPH08221981A (ja) * 1994-12-15 1996-08-30 Mitsubishi Electric Corp 同期型半導体記憶装置
JP3193581B2 (ja) 1995-01-24 2001-07-30 沖電気工業株式会社 １トランジスタ１キャパシタ型のダイナミックランダムアクセスメモリ
US6404670B2 (en) * 1996-05-24 2002-06-11 Uniram Technology, Inc. Multiple ports memory-cell structure
JP3310174B2 (ja) 1996-08-19 2002-07-29 東芝マイクロエレクトロニクス株式会社 半導体集積回路
KR100457280B1 (ko) * 1997-05-01 2004-11-16 가부시키가이샤 히타치세이사쿠쇼 반도체집적회로장치 및 그의 제조방법
US5920779A (en) * 1997-05-21 1999-07-06 United Microelectronics Corp. Differential gate oxide thickness by nitrogen implantation for mixed mode and embedded VLSI circuits
JPH1126716A (ja) * 1997-06-30 1999-01-29 Hitachi Ltd 半導体集積回路装置およびその製造方法
JPH11126886A (ja) * 1997-10-24 1999-05-11 Hitachi Ltd ダイナミック型ｒａｍ
JP4931267B2 (ja) * 1998-01-29 2012-05-16 ルネサスエレクトロニクス株式会社 半導体装置
JPH11238860A (ja) 1998-02-19 1999-08-31 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP4614481B2 (ja) * 1999-08-30 2011-01-19 ルネサスエレクトロニクス株式会社 半導体集積回路装置
JP2001127171A (ja) * 1999-10-26 2001-05-11 Matsushita Electronics Industry Corp 半導体装置及びその製造方法
US6420248B1 (en) * 2000-10-10 2002-07-16 Vanguard International Semiconductor Corp. Double gate oxide layer method of manufacture

Also Published As

Publication number Publication date
EP1081715B1 (de) 2002-09-04
KR100388589B1 (ko) 2003-06-25
DE60000400T2 (de) 2003-04-30
KR20010050100A (ko) 2001-06-15
US7102954B2 (en) 2006-09-05
JP4614481B2 (ja) 2011-01-19
TW463370B (en) 2001-11-11
JP2001068634A (ja) 2001-03-16
EP1081715A1 (de) 2001-03-07
US6649984B1 (en) 2003-11-18
US20040136230A1 (en) 2004-07-15

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Legal Events

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