DE60014774D1 - Flash-Speicher mit Übertragungs- und Kombinierfunktion - Google Patents

Flash-Speicher mit Übertragungs- und Kombinierfunktion

Info

Publication number
DE60014774D1
DE60014774D1 DE2000614774 DE60014774T DE60014774D1 DE 60014774 D1 DE60014774 D1 DE 60014774D1 DE 2000614774 DE2000614774 DE 2000614774 DE 60014774 T DE60014774 T DE 60014774T DE 60014774 D1 DE60014774 D1 DE 60014774D1
Authority
DE
Germany
Prior art keywords
transfer
flash memory
combine function
combine
function
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE2000614774
Other languages
English (en)
Other versions
DE60014774T2 (de
Inventor
Koichi Komatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Semiconductor Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE60014774D1 publication Critical patent/DE60014774D1/de
Application granted granted Critical
Publication of DE60014774T2 publication Critical patent/DE60014774T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
DE60014774T 1999-06-16 2000-04-28 Flash-Speicher mit Übertragungs- und Kombinierfunktion Expired - Lifetime DE60014774T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP16927699A JP2001006379A (ja) 1999-06-16 1999-06-16 複写、移動機能を有するフラッシュメモリ
JP16927699 1999-06-16

Publications (2)

Publication Number Publication Date
DE60014774D1 true DE60014774D1 (de) 2004-11-18
DE60014774T2 DE60014774T2 (de) 2005-02-10

Family

ID=15883520

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60014774T Expired - Lifetime DE60014774T2 (de) 1999-06-16 2000-04-28 Flash-Speicher mit Übertragungs- und Kombinierfunktion

Country Status (5)

Country Link
US (1) US6201736B1 (de)
EP (1) EP1061524B1 (de)
JP (1) JP2001006379A (de)
KR (1) KR100591570B1 (de)
DE (1) DE60014774T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6731538B2 (en) * 2000-03-10 2004-05-04 Kabushiki Kaisha Toshiba Semiconductor memory device including page latch circuit
KR100389867B1 (ko) * 2001-06-04 2003-07-04 삼성전자주식회사 플래시 메모리 관리방법
JP3875139B2 (ja) 2002-04-24 2007-01-31 Ｎｅｃエレクトロニクス株式会社 不揮発性半導体記憶装置、そのデータ書き込み制御方法およびプログラム
KR100543447B1 (ko) * 2003-04-03 2006-01-23 삼성전자주식회사 에러정정기능을 가진 플래쉬메모리장치
US7298646B1 (en) 2004-08-11 2007-11-20 Altera Corporation Apparatus for configuring programmable logic devices and associated methods
JP4955990B2 (ja) * 2005-12-14 2012-06-20 株式会社東芝 不揮発性半導体記憶装置
TWI306255B (en) * 2006-09-26 2009-02-11 Ite Tech Inc Control device for accelerating memory to execute iterant command
KR100918707B1 (ko) * 2007-03-12 2009-09-23 삼성전자주식회사 플래시 메모리를 기반으로 한 메모리 시스템
US8307180B2 (en) 2008-02-28 2012-11-06 Nokia Corporation Extended utilization area for a memory device
JP2008293648A (ja) * 2008-08-05 2008-12-04 Renesas Technology Corp 半導体記憶装置
US8874824B2 (en) 2009-06-04 2014-10-28 Memory Technologies, LLC Apparatus and method to share host system RAM with mass storage memory RAM
US9417998B2 (en) 2012-01-26 2016-08-16 Memory Technologies Llc Apparatus and method to provide cache move with non-volatile mass memory system
US9311226B2 (en) 2012-04-20 2016-04-12 Memory Technologies Llc Managing operational state data of a memory module using host memory in association with state change
JP2019008844A (ja) * 2017-06-22 2019-01-17 ルネサスエレクトロニクス株式会社 半導体装置
US11360704B2 (en) 2018-12-21 2022-06-14 Micron Technology, Inc. Multiplexed signal development in a memory device

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4253059A (en) * 1979-05-14 1981-02-24 Fairchild Camera & Instrument Corp. EPROM Reliability test circuit
JPH051040Y2 (de) * 1985-04-09 1993-01-12
JPS62114200A (ja) * 1985-11-13 1987-05-25 Mitsubishi Electric Corp 半導体メモリ装置
JP3323869B2 (ja) 1992-03-31 2002-09-09 株式会社東芝 不揮発性半導体メモリ装置
JPH07235193A (ja) 1993-12-28 1995-09-05 Toshiba Corp 半導体記憶装置
US5715423A (en) * 1994-04-18 1998-02-03 Intel Corporation Memory device with an internal data transfer circuit
US5490109A (en) * 1994-06-28 1996-02-06 Intel Corporation Method and apparatus for preventing over-erasure of flash EEPROM memory devices
KR0154756B1 (ko) * 1995-07-12 1998-12-01 김광호 반도체 메모리 장치의데이타 입출력 제어회로
KR0172366B1 (ko) * 1995-11-10 1999-03-30 김광호 불휘발성 반도체 메모리 장치의 독출 및 프로그램 방법과 그 회로
JP3702515B2 (ja) 1995-12-04 2005-10-05 富士通株式会社 フラッシュメモリ制御方法及びフラッシュメモリ制御ユニット

Also Published As

Publication number Publication date
EP1061524B1 (de) 2004-10-13
EP1061524A3 (de) 2002-05-08
EP1061524A2 (de) 2000-12-20
JP2001006379A (ja) 2001-01-12
DE60014774T2 (de) 2005-02-10
KR20010007312A (ko) 2001-01-26
KR100591570B1 (ko) 2006-06-20
US6201736B1 (en) 2001-03-13

Similar Documents

Publication Publication Date Title
DE69936654D1 (de) Speicheranordnung
DE69920390D1 (de) Mram mit geteilten wort-und bitleitungen
DE60034712D1 (de) Speicherkarte
DE60109958D1 (de) Seitenlöschbarer flash-speicher
DE60039144D1 (de) Antriebsvorrichtung mit Formgedächnislegierung
NO20016420L (no) Höytetthets ikke-flyktig minneanordning
DE60005920D1 (de) Speicherkarte
DE60014774D1 (de) Flash-Speicher mit Übertragungs- und Kombinierfunktion
DE60042640D1 (de) Datenprozessor mit cachespeicher
DE50000494D1 (de) Funktionsträgeranordnung
DE60000400D1 (de) Speicher mit eingeblendeter Logikschaltung
DE69937611D1 (de) Intelligenter Puffer-Speicher
FI991261A0 (fi) Trie-rakenteeseen perustuva funktionaalinen muisti
DE69908340D1 (de) Seitenmoduslöschverfahren in flash-speichermatrize
DE60043485D1 (de) Nichtflüchtiger Halbleiterspeicher
DE69823074D1 (de) Speicherschaltung mit variabler Latenz
DE69901513D1 (de) Simultaner flash-speicher mit flexibler speicherbankeinteilung
DE69828021D1 (de) Halbleiterspeicheranordnung mit mehreren Banken
DE69929409D1 (de) Speicherzelle mit kapazitiver Ladung
DE60009817D1 (de) Gemeinsamen Speicher verteilende Multiprozessorvorrichtung
DE69919992D1 (de) Verteilter Speicher mit programmierbarer Grösse
DE60000469T2 (de) Silikonemulsionen mit grösser Korngrössen
DE10082797D2 (de) Wärmespeicher
DE50014731D1 (de) Speicherzellenanordnung
DE60030392D1 (de) Wertübertragungssysteme

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FUJITSU MICROELECTRONICS LTD., TOKYO, JP

8327 Change in the person/name/address of the patent owner

Owner name: FUJITSU SEMICONDUCTOR LTD., YOKOHAMA, KANAGAWA, JP

8328 Change in the person/name/address of the agent

Representative=s name: SEEGER SEEGER LINDNER PARTNERSCHAFT PATENTANWAELTE