DE69920390D1 - Mram mit geteilten wort-und bitleitungen - Google Patents

Mram mit geteilten wort-und bitleitungen

Info

Publication number
DE69920390D1
DE69920390D1 DE69920390T DE69920390T DE69920390D1 DE 69920390 D1 DE69920390 D1 DE 69920390D1 DE 69920390 T DE69920390 T DE 69920390T DE 69920390 T DE69920390 T DE 69920390T DE 69920390 D1 DE69920390 D1 DE 69920390D1
Authority
DE
Germany
Prior art keywords
biteline
mram
shared word
shared
word
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69920390T
Other languages
English (en)
Other versions
DE69920390T2 (de
Inventor
K Naji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Application granted granted Critical
Publication of DE69920390D1 publication Critical patent/DE69920390D1/de
Publication of DE69920390T2 publication Critical patent/DE69920390T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1657—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)
DE69920390T 1998-07-20 1999-07-15 Mram mit geteilten wort-und bitleitungen Expired - Fee Related DE69920390T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/118,977 US5946227A (en) 1998-07-20 1998-07-20 Magnetoresistive random access memory with shared word and digit lines
US118977 1998-07-20
PCT/US1999/016197 WO2000004551A1 (en) 1998-07-20 1999-07-15 Mram with shared word and digit lines

Publications (2)

Publication Number Publication Date
DE69920390D1 true DE69920390D1 (de) 2004-10-28
DE69920390T2 DE69920390T2 (de) 2005-02-24

Family

ID=22381905

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69920390T Expired - Fee Related DE69920390T2 (de) 1998-07-20 1999-07-15 Mram mit geteilten wort-und bitleitungen

Country Status (5)

Country Link
US (1) US5946227A (de)
EP (1) EP1018118B1 (de)
JP (1) JP2002520767A (de)
DE (1) DE69920390T2 (de)
WO (1) WO2000004551A1 (de)

Families Citing this family (103)

* Cited by examiner, † Cited by third party
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US6219273B1 (en) * 1998-03-02 2001-04-17 California Institute Of Technology Integrated semiconductor-magnetic random access memory system
US6111781A (en) * 1998-08-03 2000-08-29 Motorola, Inc. Magnetic random access memory array divided into a plurality of memory banks
US6172903B1 (en) * 1998-09-22 2001-01-09 Canon Kabushiki Kaisha Hybrid device, memory apparatus using such hybrid devices and information reading method
TW440835B (en) * 1998-09-30 2001-06-16 Siemens Ag Magnetoresistive memory with raised interference security
US6178131B1 (en) * 1999-01-11 2001-01-23 Ball Semiconductor, Inc. Magnetic random access memory
FR2792781B1 (fr) * 1999-04-26 2001-07-13 Cit Alcatel Procede et dispositif d'alimentation electrique dans un appareil mobile
US6611405B1 (en) * 1999-09-16 2003-08-26 Kabushiki Kaisha Toshiba Magnetoresistive element and magnetic memory device
SG88760A1 (en) * 1999-10-13 2002-05-21 Inst Data Storage Four state magnetoresistive random access memory
US6244331B1 (en) * 1999-10-22 2001-06-12 Intel Corporation Heatsink with integrated blower for improved heat transfer
US6169689B1 (en) * 1999-12-08 2001-01-02 Motorola, Inc. MTJ stacked cell memory sensing method and apparatus
JP2001196658A (ja) * 2000-01-07 2001-07-19 Fujitsu Ltd 磁気素子及び磁気記憶装置
JP4477199B2 (ja) * 2000-06-16 2010-06-09 株式会社ルネサステクノロジ 磁気ランダムアクセスメモリ、磁気ランダムアクセスメモリへのアクセス方法および磁気ランダムアクセスメモリの製造方法
DE10033486A1 (de) * 2000-07-10 2002-01-24 Infineon Technologies Ag Integrierter Speicher mit Speicherzellen mit magnetoresistivem Speichereffekt
US6493258B1 (en) * 2000-07-18 2002-12-10 Micron Technology, Inc. Magneto-resistive memory array
US6724654B1 (en) * 2000-08-14 2004-04-20 Micron Technology, Inc. Pulsed write techniques for magneto-resistive memories
DE10041378C1 (de) * 2000-08-23 2002-05-16 Infineon Technologies Ag MRAM-Anordnung
US6331943B1 (en) * 2000-08-28 2001-12-18 Motorola, Inc. MTJ MRAM series-parallel architecture
DE10045042C1 (de) * 2000-09-12 2002-05-23 Infineon Technologies Ag MRAM-Modulanordnung
JP2002170377A (ja) * 2000-09-22 2002-06-14 Mitsubishi Electric Corp 薄膜磁性体記憶装置
JP5100806B2 (ja) * 2000-09-22 2012-12-19 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
JP4656720B2 (ja) * 2000-09-25 2011-03-23 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
DE10050365A1 (de) * 2000-10-11 2002-05-16 Infineon Technologies Ag MRAM-Anordnung
US6385082B1 (en) * 2000-11-08 2002-05-07 International Business Machines Corp. Thermally-assisted magnetic random access memory (MRAM)
US6538919B1 (en) 2000-11-08 2003-03-25 International Business Machines Corporation Magnetic tunnel junctions using ferrimagnetic materials
TW584976B (en) * 2000-11-09 2004-04-21 Sanyo Electric Co Magnetic memory device
JP4726292B2 (ja) * 2000-11-14 2011-07-20 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
DE10059181C2 (de) * 2000-11-29 2002-10-24 Infineon Technologies Ag Integrierter magnetoresistiver Halbleiterspeicher und Herstellungsverfahren dafür
JP4667594B2 (ja) * 2000-12-25 2011-04-13 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
US7242922B2 (en) * 2000-12-29 2007-07-10 Vesta Corporation Toll free calling account recharge system and method
US6351409B1 (en) * 2001-01-04 2002-02-26 Motorola, Inc. MRAM write apparatus and method
DE10102351B4 (de) * 2001-01-19 2007-08-02 Infineon Technologies Ag Integrierter Speicher
US6418046B1 (en) 2001-01-30 2002-07-09 Motorola, Inc. MRAM architecture and system
JP3677455B2 (ja) * 2001-02-13 2005-08-03 Ｎｅｃエレクトロニクス株式会社 不揮発性磁気記憶装置およびその製造方法
JP2002298572A (ja) 2001-03-28 2002-10-11 Toshiba Corp 半導体記憶装置
JP4405103B2 (ja) * 2001-04-20 2010-01-27 株式会社東芝 半導体記憶装置
JP2002367364A (ja) 2001-06-06 2002-12-20 Sanyo Electric Co Ltd 磁気メモリ装置
DE10132849A1 (de) * 2001-07-06 2003-01-23 Infineon Technologies Ag Halbleiterspeichereinrichtung
US6515896B1 (en) * 2001-07-24 2003-02-04 Hewlett-Packard Company Memory device with short read time
US6385079B1 (en) * 2001-08-31 2002-05-07 Hewlett-Packard Company Methods and structure for maximizing signal to noise ratio in resistive array
JP4780874B2 (ja) * 2001-09-04 2011-09-28 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
US6538917B1 (en) * 2001-09-25 2003-03-25 Hewlett-Packard Development Company, L.P. Read methods for magneto-resistive device having soft reference layer
US6902481B2 (en) 2001-09-28 2005-06-07 Igt Decoupling of the graphical presentation of a game from the presentation logic
US8708828B2 (en) 2001-09-28 2014-04-29 Igt Pluggable modular gaming modifiers and configuration templates for gaming environments
US7931533B2 (en) 2001-09-28 2011-04-26 Igt Game development architecture that decouples the game logic from the graphics logics
US6545906B1 (en) 2001-10-16 2003-04-08 Motorola, Inc. Method of writing to scalable magnetoresistance random access memory element
KR100451660B1 (ko) * 2001-12-05 2004-10-08 대한민국(서울대학교 총장) 전압을 이용한 강자성박막의 자화용이축 제어방법 및 이를이용한 비휘발성, 초고집적, 초절전형 자기메모리와정보기록방법
JP2003196973A (ja) * 2001-12-21 2003-07-11 Mitsubishi Electric Corp 薄膜磁性体記憶装置
US7020008B2 (en) 2001-12-26 2006-03-28 Renesas Technology Corp. Thin film magnetic memory device writing data with bidirectional current
US6760244B2 (en) * 2002-01-30 2004-07-06 Sanyo Electric Co., Ltd. Magnetic memory device including storage elements exhibiting a ferromagnetic tunnel effect
US6498747B1 (en) * 2002-02-08 2002-12-24 Infineon Technologies Ag Magnetoresistive random access memory (MRAM) cross-point array with reduced parasitic effects
US6665205B2 (en) * 2002-02-20 2003-12-16 Hewlett-Packard Development Company, Lp. Shared global word line magnetic random access memory
JP2003346474A (ja) * 2002-03-19 2003-12-05 Mitsubishi Electric Corp 薄膜磁性体記憶装置
JP4047615B2 (ja) 2002-04-03 2008-02-13 株式会社ルネサステクノロジ 磁気記憶装置
US6940748B2 (en) * 2002-05-16 2005-09-06 Micron Technology, Inc. Stacked 1T-nMTJ MRAM structure
WO2003098636A2 (en) * 2002-05-16 2003-11-27 Micron Technology, Inc. STACKED 1T-nMEMORY CELL STRUCTURE
US6693824B2 (en) 2002-06-28 2004-02-17 Motorola, Inc. Circuit and method of writing a toggle memory
US6903964B2 (en) * 2002-06-28 2005-06-07 Freescale Semiconductor, Inc. MRAM architecture with electrically isolated read and write circuitry
US7095646B2 (en) * 2002-07-17 2006-08-22 Freescale Semiconductor, Inc. Multi-state magnetoresistance random access cell with improved memory storage density
US6856536B2 (en) * 2002-08-02 2005-02-15 Unity Semiconductor Corporation Non-volatile memory with a single transistor and resistive memory element
US6917539B2 (en) * 2002-08-02 2005-07-12 Unity Semiconductor Corporation High-density NVRAM
US6798685B2 (en) * 2002-08-02 2004-09-28 Unity Semiconductor Corporation Multi-output multiplexor
US6831854B2 (en) * 2002-08-02 2004-12-14 Unity Semiconductor Corporation Cross point memory array using distinct voltages
US6834008B2 (en) * 2002-08-02 2004-12-21 Unity Semiconductor Corporation Cross point memory array using multiple modes of operation
US6859382B2 (en) * 2002-08-02 2005-02-22 Unity Semiconductor Corporation Memory array of a non-volatile ram
US6850455B2 (en) * 2002-08-02 2005-02-01 Unity Semiconductor Corporation Multiplexor having a reference voltage on unselected lines
US6850429B2 (en) * 2002-08-02 2005-02-01 Unity Semiconductor Corporation Cross point memory array with memory plugs exhibiting a characteristic hysteresis
US6753561B1 (en) 2002-08-02 2004-06-22 Unity Semiconductor Corporation Cross point memory array using multiple thin films
US6970375B2 (en) * 2002-08-02 2005-11-29 Unity Semiconductor Corporation Providing a reference voltage to a cross point memory array
US6882553B2 (en) * 2002-08-08 2005-04-19 Micron Technology Inc. Stacked columnar resistive memory structure and its method of formation and operation
US6822278B1 (en) * 2002-09-11 2004-11-23 Silicon Magnetic Systems Localized field-inducding line and method for making the same
CN100403444C (zh) * 2002-09-28 2008-07-16 台湾积体电路制造股份有限公司 磁阻式随机存取存储器电路
US6944049B2 (en) * 2002-10-30 2005-09-13 Infineon Technologies Ag Magnetic tunnel junction memory cell architecture
US6660568B1 (en) 2002-11-07 2003-12-09 International Business Machines Corporation BiLevel metallization for embedded back end of the line structures
US6914808B2 (en) 2002-12-27 2005-07-05 Kabushiki Kaisha Toshiba Magnetoresistive random access memory device
US6839270B2 (en) * 2003-01-17 2005-01-04 Hewlett-Packard Development Company, L.P. System for and method of accessing a four-conductor magnetic random access memory
US6714442B1 (en) 2003-01-17 2004-03-30 Motorola, Inc. MRAM architecture with a grounded write bit line and electrically isolated read bit line
US6952364B2 (en) 2003-03-03 2005-10-04 Samsung Electronics Co., Ltd. Magnetic tunnel junction structures and methods of fabrication
US6667899B1 (en) 2003-03-27 2003-12-23 Motorola, Inc. Magnetic memory and method of bi-directional write current programming
KR100542743B1 (ko) * 2003-04-22 2006-01-11 삼성전자주식회사 자기 랜덤 엑세스 메모리
US6956763B2 (en) 2003-06-27 2005-10-18 Freescale Semiconductor, Inc. MRAM element and methods for writing the MRAM element
US6977838B1 (en) * 2003-08-11 2005-12-20 Applied Spintronics Technology, Inc. Method and system for providing a programmable current source for a magnetic memory
US6967366B2 (en) 2003-08-25 2005-11-22 Freescale Semiconductor, Inc. Magnetoresistive random access memory with reduced switching field variation
US7372722B2 (en) 2003-09-29 2008-05-13 Samsung Electronics Co., Ltd. Methods of operating magnetic random access memory devices including heat-generating structures
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US7023753B2 (en) * 2003-11-30 2006-04-04 Union Semiconductor Technology Corporation Current controlled word and sense source
US7054185B2 (en) * 2003-11-30 2006-05-30 Union Semiconductor Technology Corporation Optimized MRAM current sources
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CN1957423A (zh) * 2004-05-27 2007-05-02 皇家飞利浦电子股份有限公司 Mram功率有效字节写入的颠倒磁性隧道结
US7269685B2 (en) * 2004-09-02 2007-09-11 Micron Technology, Inc. Apparatus and methods for storing data in a magnetic random access memory (MRAM)
US7129098B2 (en) 2004-11-24 2006-10-31 Freescale Semiconductor, Inc. Reduced power magnetoresistive random access memory elements
JP2006185477A (ja) * 2004-12-27 2006-07-13 Fujitsu Ltd 磁気メモリ装置並びにその読み出し方法及び書き込み方法
US20060205513A1 (en) * 2005-03-09 2006-09-14 Igt MRAM as nonvolatile safe storage for power hit and ESD tolerance in gaming machines
US7736234B2 (en) * 2005-03-09 2010-06-15 Igt MRAM as critical event storage for powered down gaming machines
US7722468B2 (en) * 2005-03-09 2010-05-25 Igt Magnetoresistive memory units as read only memory devices in gaming machines
JP2008085349A (ja) * 2007-10-11 2008-04-10 Toshiba Corp 磁気ランダムアクセスメモリ
JP5150936B2 (ja) * 2007-12-28 2013-02-27 ルネサスエレクトロニクス株式会社 半導体装置
CN101546598B (zh) * 2008-03-27 2011-12-14 台湾积体电路制造股份有限公司 磁阻随机存取存储器装置与其切换方法与存储器阵列
JP5153844B2 (ja) * 2010-09-24 2013-02-27 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
JP5138056B2 (ja) * 2011-03-03 2013-02-06 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
KR20130139066A (ko) 2012-06-12 2013-12-20 삼성전자주식회사 소스라인 전압 발생기를 포함하는 자기 저항 메모리 장치

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JP3179937B2 (ja) * 1993-05-01 2001-06-25 株式会社東芝 半導体装置
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US5541868A (en) * 1995-02-21 1996-07-30 The United States Of America As Represented By The Secretary Of The Navy Annular GMR-based memory element
US5732016A (en) * 1996-07-02 1998-03-24 Motorola Memory cell structure in a magnetic random access memory and a method for fabricating thereof
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Also Published As

Publication number Publication date
EP1018118B1 (de) 2004-09-22
WO2000004551A1 (en) 2000-01-27
JP2002520767A (ja) 2002-07-09
US5946227A (en) 1999-08-31
DE69920390T2 (de) 2005-02-24
EP1018118A1 (de) 2000-07-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FREESCALE SEMICONDUCTOR, INC., AUSTIN, TEX., US

8339 Ceased/non-payment of the annual fee