DE60018875D1 - MRAM mit Leseverstärkern - Google Patents

MRAM mit Leseverstärkern

Info

Publication number
DE60018875D1
DE60018875D1 DE60018875T DE60018875T DE60018875D1 DE 60018875 D1 DE60018875 D1 DE 60018875D1 DE 60018875 T DE60018875 T DE 60018875T DE 60018875 T DE60018875 T DE 60018875T DE 60018875 D1 DE60018875 D1 DE 60018875D1
Authority
DE
Germany
Prior art keywords
mram
sense amplifiers
amplifiers
sense
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60018875T
Other languages
English (en)
Other versions
DE60018875T2 (de
Inventor
Frederick A Perner
Kenneth J Eldredge
Lung T Tran
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of DE60018875D1 publication Critical patent/DE60018875D1/de
Application granted granted Critical
Publication of DE60018875T2 publication Critical patent/DE60018875T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1693—Timing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/067—Single-ended amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
DE60018875T 1999-10-29 2000-10-24 MRAM mit Leseverstärkern Expired - Lifetime DE60018875T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US430611 1999-10-29
US09/430,611 US6188615B1 (en) 1999-10-29 1999-10-29 MRAM device including digital sense amplifiers

Publications (2)

Publication Number Publication Date
DE60018875D1 true DE60018875D1 (de) 2005-04-28
DE60018875T2 DE60018875T2 (de) 2006-03-23

Family

ID=23708300

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60018875T Expired - Lifetime DE60018875T2 (de) 1999-10-29 2000-10-24 MRAM mit Leseverstärkern

Country Status (5)

Country Link
US (1) US6188615B1 (de)
EP (1) EP1096501B1 (de)
JP (1) JP3760092B2 (de)
CN (1) CN1295332A (de)
DE (1) DE60018875T2 (de)

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US6426907B1 (en) * 2001-01-24 2002-07-30 Infineon Technologies North America Corp. Reference for MRAM cell
DE10112281B4 (de) * 2001-03-14 2006-06-29 Infineon Technologies Ag Leseverstärkeranordnungen für eine Halbleiterspeichereinrichtung
JP2002299575A (ja) * 2001-03-29 2002-10-11 Toshiba Corp 半導体記憶装置
DE60129928D1 (de) * 2001-04-19 2007-09-27 St Microelectronics Srl Verfahren und Schaltung zur Zeitsteuerung des dynamischen Auslesens einer Speicherzelle mit Kontrolle der Integrationszeit
US6587384B2 (en) * 2001-04-21 2003-07-01 Hewlett-Packard Development Company, L.P. Multi-function serial I/O circuit
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US6504779B2 (en) * 2001-05-14 2003-01-07 Hewlett-Packard Company Resistive cross point memory with on-chip sense amplifier calibration method and apparatus
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US6597600B2 (en) * 2001-08-27 2003-07-22 Micron Technology, Inc. Offset compensated sensing for magnetic random access memory
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US6456524B1 (en) * 2001-10-31 2002-09-24 Hewlett-Packard Company Hybrid resistive cross point memory cell arrays and methods of making the same
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US6868025B2 (en) * 2003-03-10 2005-03-15 Sharp Laboratories Of America, Inc. Temperature compensated RRAM circuit
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JP3913709B2 (ja) * 2003-05-09 2007-05-09 株式会社東芝 半導体記憶装置
US6826094B1 (en) 2003-06-02 2004-11-30 Hewlett-Packard Development Company, L.P. Magnetic memory cell sensing with first and second currents
US6795359B1 (en) * 2003-06-10 2004-09-21 Micron Technology, Inc. Methods and apparatus for measuring current as in sensing a memory cell
US7237074B2 (en) * 2003-06-13 2007-06-26 Sandisk Corporation Tracking cells for a memory system
US7042783B2 (en) * 2003-06-18 2006-05-09 Hewlett-Packard Development Company, L.P. Magnetic memory
US7061789B2 (en) * 2003-07-02 2006-06-13 Micron Technology, Inc. Sensing scheme for programmable resistance memory using voltage coefficient characteristics
US6912165B2 (en) * 2003-08-22 2005-06-28 International Business Machines Corporation Method for transparent updates of output driver impedance
US6901005B2 (en) * 2003-08-27 2005-05-31 Hewlett-Packard Development Company, L.P. Method and system reading magnetic memory
US7006388B2 (en) 2003-08-28 2006-02-28 Hewlett-Packard Development Company, L.P. Memory with reference-initiated sequential sensing
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US6842365B1 (en) * 2003-09-05 2005-01-11 Freescale Semiconductor, Inc. Write driver for a magnetoresistive memory
US7079436B2 (en) * 2003-09-30 2006-07-18 Hewlett-Packard Development Company, L.P. Resistive cross point memory
US6894938B2 (en) * 2003-10-03 2005-05-17 Hewlett-Packard Development Company, L.P. System and method of calibrating a read circuit in a magnetic memory
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US7913130B2 (en) * 2003-10-31 2011-03-22 Hewlett-Packard Development Company, L.P. Multi-sample read circuit having test mode of operation
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US6980455B2 (en) * 2004-02-03 2005-12-27 Hewlett-Packard Development Company, L.P. Remote sensed pre-amplifier for cross-point arrays
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US7042757B2 (en) * 2004-03-04 2006-05-09 Hewlett-Packard Development Company, L.P. 1R1D MRAM block architecture
US7440314B2 (en) 2004-03-05 2008-10-21 Nec Corporation Toggle-type magnetoresistive random access memory
US7102920B2 (en) * 2004-03-23 2006-09-05 Hewlett-Packard Development Company, L.P. Soft-reference three conductor magnetic memory storage device
US7102921B2 (en) * 2004-05-11 2006-09-05 Hewlett-Packard Development Company, L.P. Magnetic memory device
US7075817B2 (en) * 2004-07-20 2006-07-11 Unity Semiconductor Corporation Two terminal memory array having reference cells
US7224598B2 (en) * 2004-09-02 2007-05-29 Hewlett-Packard Development Company, L.P. Programming of programmable resistive memory devices
US7130235B2 (en) * 2004-09-03 2006-10-31 Hewlett-Packard Development Company, L.P. Method and apparatus for a sense amplifier
JP2006134398A (ja) * 2004-11-04 2006-05-25 Sony Corp 記憶装置及び半導体装置
US7239537B2 (en) * 2005-01-12 2007-07-03 International Business Machines Corporation Method and apparatus for current sense amplifier calibration in MRAM devices
US7397074B2 (en) * 2005-01-12 2008-07-08 Samsung Electronics Co., Ltd. RF field heated diodes for providing thermally assisted switching to magnetic memory elements
CN101142629B (zh) * 2005-01-24 2010-05-19 Nxp股份有限公司 具有附加稳定层的磁性rom信息载体
US7543211B2 (en) * 2005-01-31 2009-06-02 Everspin Technologies, Inc. Toggle memory burst
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US7379364B2 (en) * 2006-10-19 2008-05-27 Unity Semiconductor Corporation Sensing a signal in a two-terminal memory array having leakage current
US7372753B1 (en) * 2006-10-19 2008-05-13 Unity Semiconductor Corporation Two-cycle sensing in a two-terminal memory array having leakage current
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US7715244B2 (en) * 2008-02-05 2010-05-11 Unity Semiconductor Corporation Non-volatile register having a memory element and register logic vertically configured on a substrate
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US8406033B2 (en) * 2009-06-22 2013-03-26 Macronix International Co., Ltd. Memory device and method for sensing and fixing margin cells
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JP5776927B2 (ja) * 2011-03-28 2015-09-09 ソニー株式会社 情報処理装置及び方法、並びにプログラム
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Also Published As

Publication number Publication date
CN1295332A (zh) 2001-05-16
JP2001184857A (ja) 2001-07-06
DE60018875T2 (de) 2006-03-23
JP3760092B2 (ja) 2006-03-29
EP1096501A1 (de) 2001-05-02
EP1096501B1 (de) 2005-03-23
US6188615B1 (en) 2001-02-13

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: HEWLETT-PACKARD CO. (N.D.GES.D.STAATES DELAWARE),

8327 Change in the person/name/address of the patent owner

Owner name: HEWLETT-PACKARD DEVELOPMENT CO., L.P., HOUSTON, TE

8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: SAMSUNG ELECTRONICS CO., LTD., SUWON, GYEONGGI, KR