DE69930129D1 - Mram speicher mit mehreren speicherbanken - Google Patents

Mram speicher mit mehreren speicherbanken

Info

Publication number
DE69930129D1
DE69930129D1 DE69930129T DE69930129T DE69930129D1 DE 69930129 D1 DE69930129 D1 DE 69930129D1 DE 69930129 T DE69930129 T DE 69930129T DE 69930129 T DE69930129 T DE 69930129T DE 69930129 D1 DE69930129 D1 DE 69930129D1
Authority
DE
Germany
Prior art keywords
memory
mram
banks
memory banks
multiple memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69930129T
Other languages
English (en)
Other versions
DE69930129T2 (de
Inventor
K Naji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of DE69930129D1 publication Critical patent/DE69930129D1/de
Application granted granted Critical
Publication of DE69930129T2 publication Critical patent/DE69930129T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1655—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1657—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)
DE69930129T 1998-08-03 1999-08-03 Mram speicher mit mehreren speicherbanken Expired - Fee Related DE69930129T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/128,020 US6111781A (en) 1998-08-03 1998-08-03 Magnetic random access memory array divided into a plurality of memory banks
US128020 1998-08-03
PCT/US1999/017581 WO2000008650A1 (en) 1998-08-03 1999-08-03 Mram array having a plurality of memory banks

Publications (2)

Publication Number Publication Date
DE69930129D1 true DE69930129D1 (de) 2006-04-27
DE69930129T2 DE69930129T2 (de) 2006-08-31

Family

ID=22433205

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69930129T Expired - Fee Related DE69930129T2 (de) 1998-08-03 1999-08-03 Mram speicher mit mehreren speicherbanken

Country Status (6)

Country Link
US (2) US6111781A (de)
EP (1) EP1105879B1 (de)
JP (1) JP4574010B2 (de)
DE (1) DE69930129T2 (de)
TW (1) TW454185B (de)
WO (1) WO2000008650A1 (de)

Families Citing this family (76)

* Cited by examiner, † Cited by third party
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US6256224B1 (en) * 2000-05-03 2001-07-03 Hewlett-Packard Co Write circuit for large MRAM arrays
DE19853447A1 (de) 1998-11-19 2000-05-25 Siemens Ag Magnetischer Speicher
US6244331B1 (en) * 1999-10-22 2001-06-12 Intel Corporation Heatsink with integrated blower for improved heat transfer
US6185143B1 (en) * 2000-02-04 2001-02-06 Hewlett-Packard Company Magnetic random access memory (MRAM) device including differential sense amplifiers
JP4477199B2 (ja) * 2000-06-16 2010-06-09 株式会社ルネサステクノロジ 磁気ランダムアクセスメモリ、磁気ランダムアクセスメモリへのアクセス方法および磁気ランダムアクセスメモリの製造方法
US6317376B1 (en) * 2000-06-20 2001-11-13 Hewlett-Packard Company Reference signal generation for magnetic random access memory devices
US6272041B1 (en) * 2000-08-28 2001-08-07 Motorola, Inc. MTJ MRAM parallel-parallel architecture
US6331943B1 (en) * 2000-08-28 2001-12-18 Motorola, Inc. MTJ MRAM series-parallel architecture
DE10045042C1 (de) * 2000-09-12 2002-05-23 Infineon Technologies Ag MRAM-Modulanordnung
JP2002170377A (ja) * 2000-09-22 2002-06-14 Mitsubishi Electric Corp 薄膜磁性体記憶装置
JP2002100181A (ja) * 2000-09-27 2002-04-05 Nec Corp 磁気ランダムアクセスメモリ
JP4149647B2 (ja) 2000-09-28 2008-09-10 株式会社東芝 半導体記憶装置及びその製造方法
US6587370B2 (en) * 2000-11-01 2003-07-01 Canon Kabushiki Kaisha Magnetic memory and information recording and reproducing method therefor
US6335890B1 (en) * 2000-11-01 2002-01-01 International Business Machines Corporation Segmented write line architecture for writing magnetic random access memories
TW584976B (en) * 2000-11-09 2004-04-21 Sanyo Electric Co Magnetic memory device
JP4726292B2 (ja) * 2000-11-14 2011-07-20 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
JP4577334B2 (ja) * 2000-11-27 2010-11-10 株式会社日立製作所 半導体装置
JP4667594B2 (ja) * 2000-12-25 2011-04-13 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
JP3920565B2 (ja) * 2000-12-26 2007-05-30 株式会社東芝 磁気ランダムアクセスメモリ
US7242922B2 (en) * 2000-12-29 2007-07-10 Vesta Corporation Toll free calling account recharge system and method
US6426907B1 (en) 2001-01-24 2002-07-30 Infineon Technologies North America Corp. Reference for MRAM cell
US6873547B1 (en) * 2001-02-23 2005-03-29 Read Rite Corporation High capacity MRAM memory array architecture
JP4712204B2 (ja) * 2001-03-05 2011-06-29 ルネサスエレクトロニクス株式会社 記憶装置
JP5300959B2 (ja) * 2001-04-26 2013-09-25 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
JP4731041B2 (ja) * 2001-05-16 2011-07-20 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
JP2002367364A (ja) 2001-06-06 2002-12-20 Sanyo Electric Co Ltd 磁気メモリ装置
US6515896B1 (en) * 2001-07-24 2003-02-04 Hewlett-Packard Company Memory device with short read time
JP4434527B2 (ja) * 2001-08-08 2010-03-17 株式会社東芝 半導体記憶装置
US6829158B2 (en) * 2001-08-22 2004-12-07 Motorola, Inc. Magnetoresistive level generator and method
US6869855B1 (en) 2001-09-02 2005-03-22 Borealis Technical Limited Method for making electrode pairs
JP4780874B2 (ja) * 2001-09-04 2011-09-28 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
JP3853199B2 (ja) * 2001-11-08 2006-12-06 Ｎｅｃエレクトロニクス株式会社 半導体記憶装置及び半導体記憶装置の読み出し方法
WO2003052828A1 (fr) * 2001-12-14 2003-06-26 Hitachi, Ltd. Dispositif a semi-conducteur
JP2003197872A (ja) * 2001-12-26 2003-07-11 Canon Inc 磁気抵抗効果膜を用いたメモリ
US6760244B2 (en) 2002-01-30 2004-07-06 Sanyo Electric Co., Ltd. Magnetic memory device including storage elements exhibiting a ferromagnetic tunnel effect
AU2003201760A1 (en) 2002-04-04 2003-10-20 Kabushiki Kaisha Toshiba Phase-change memory device
JP4282314B2 (ja) * 2002-06-25 2009-06-17 シャープ株式会社 記憶装置
US6903964B2 (en) * 2002-06-28 2005-06-07 Freescale Semiconductor, Inc. MRAM architecture with electrically isolated read and write circuitry
US6693824B2 (en) 2002-06-28 2004-02-17 Motorola, Inc. Circuit and method of writing a toggle memory
US6917539B2 (en) * 2002-08-02 2005-07-12 Unity Semiconductor Corporation High-density NVRAM
US6856536B2 (en) * 2002-08-02 2005-02-15 Unity Semiconductor Corporation Non-volatile memory with a single transistor and resistive memory element
US6831854B2 (en) * 2002-08-02 2004-12-14 Unity Semiconductor Corporation Cross point memory array using distinct voltages
US6850455B2 (en) * 2002-08-02 2005-02-01 Unity Semiconductor Corporation Multiplexor having a reference voltage on unselected lines
US6970375B2 (en) * 2002-08-02 2005-11-29 Unity Semiconductor Corporation Providing a reference voltage to a cross point memory array
US6834008B2 (en) * 2002-08-02 2004-12-21 Unity Semiconductor Corporation Cross point memory array using multiple modes of operation
US6859382B2 (en) * 2002-08-02 2005-02-22 Unity Semiconductor Corporation Memory array of a non-volatile ram
US6798685B2 (en) * 2002-08-02 2004-09-28 Unity Semiconductor Corporation Multi-output multiplexor
KR100496858B1 (ko) * 2002-08-02 2005-06-22 삼성전자주식회사 비트라인 클램핑 전압에 상관없이 기준 셀로 일정 전류가흐르는 마그네틱 랜덤 억세스 메모리
US6850429B2 (en) * 2002-08-02 2005-02-01 Unity Semiconductor Corporation Cross point memory array with memory plugs exhibiting a characteristic hysteresis
US6753561B1 (en) 2002-08-02 2004-06-22 Unity Semiconductor Corporation Cross point memory array using multiple thin films
JP2004079632A (ja) * 2002-08-12 2004-03-11 Toshiba Corp 半導体集積回路装置
US6791865B2 (en) * 2002-09-03 2004-09-14 Hewlett-Packard Development Company, L.P. Memory device capable of calibration and calibration methods therefor
KR100506932B1 (ko) * 2002-12-10 2005-08-09 삼성전자주식회사 기준 셀들을 갖는 자기 램 소자 및 그 구조체
JP3766380B2 (ja) * 2002-12-25 2006-04-12 株式会社東芝 磁気ランダムアクセスメモリ及びその磁気ランダムアクセスメモリのデータ読み出し方法
US6714442B1 (en) * 2003-01-17 2004-03-30 Motorola, Inc. MRAM architecture with a grounded write bit line and electrically isolated read bit line
US6667899B1 (en) 2003-03-27 2003-12-23 Motorola, Inc. Magnetic memory and method of bi-directional write current programming
US7123530B2 (en) * 2003-10-09 2006-10-17 Micron Technology, Inc. AC sensing for a resistive memory
KR100528341B1 (ko) * 2003-12-30 2005-11-15 삼성전자주식회사 자기 램 및 그 읽기방법
US7075817B2 (en) * 2004-07-20 2006-07-11 Unity Semiconductor Corporation Two terminal memory array having reference cells
US7327600B2 (en) * 2004-12-23 2008-02-05 Unity Semiconductor Corporation Storage controller for multiple configurations of vertical memory
US8084835B2 (en) * 2006-10-20 2011-12-27 Avalanche Technology, Inc. Non-uniform switching based non-volatile magnetic based memory
JP4675362B2 (ja) * 2007-08-10 2011-04-20 ルネサスエレクトロニクス株式会社 半導体装置
JP4712779B2 (ja) * 2007-10-19 2011-06-29 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
JP2008084533A (ja) * 2007-11-09 2008-04-10 Renesas Technology Corp 薄膜磁性体記憶装置
KR101068573B1 (ko) * 2009-04-30 2011-09-30 주식회사 하이닉스반도체 반도체 메모리 장치
US8605520B2 (en) * 2010-09-22 2013-12-10 Magic Technologies, Inc. Replaceable, precise-tracking reference lines for memory products
JP5165040B2 (ja) * 2010-10-15 2013-03-21 ルネサスエレクトロニクス株式会社 半導体集積回路
JP5138056B2 (ja) * 2011-03-03 2013-02-06 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
JP5213980B2 (ja) * 2011-03-23 2013-06-19 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
JP5192566B2 (ja) * 2011-05-27 2013-05-08 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
US9183910B2 (en) 2012-05-31 2015-11-10 Samsung Electronics Co., Ltd. Semiconductor memory devices for alternately selecting bit lines
US8750018B2 (en) 2012-06-04 2014-06-10 Samsung Electronics Co., Ltd. Sense amplifier circuitry for resistive type memory
US9070424B2 (en) 2012-06-29 2015-06-30 Samsung Electronics Co., Ltd. Sense amplifier circuitry for resistive type memory
KR102116719B1 (ko) * 2013-12-24 2020-05-29 삼성전자 주식회사 자기 메모리 장치
US9431083B2 (en) 2014-03-25 2016-08-30 Samsung Electronics Co., Ltd. Nonvolatile memory device and storage device having the same
TWI772237B (zh) * 2020-12-18 2022-07-21 力旺電子股份有限公司 記憶體裝置及其操作方法

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JP2845952B2 (ja) * 1989-06-28 1999-01-13 株式会社日立製作所 薄膜磁気メモリセルとその記録および再生装置
US5173873A (en) * 1990-06-28 1992-12-22 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration High speed magneto-resistive random access memory
JPH0512891A (ja) * 1990-09-17 1993-01-22 Toshiba Corp 半導体記憶装置
US5343422A (en) * 1993-02-23 1994-08-30 International Business Machines Corporation Nonvolatile magnetoresistive storage device using spin valve effect
US5894447A (en) * 1996-09-26 1999-04-13 Kabushiki Kaisha Toshiba Semiconductor memory device including a particular memory cell block structure
KR100224673B1 (ko) * 1996-12-13 1999-10-15 윤종용 불휘발성 강유전체 메모리장치 및 그의 구동방법
US5831920A (en) * 1997-10-14 1998-11-03 Motorola, Inc. GMR device having a sense amplifier protected by a circuit for dissipating electric charges
US5946227A (en) * 1998-07-20 1999-08-31 Motorola, Inc. Magnetoresistive random access memory with shared word and digit lines
US6055178A (en) * 1998-12-18 2000-04-25 Motorola, Inc. Magnetic random access memory with a reference memory array

Also Published As

Publication number Publication date
US6278631B1 (en) 2001-08-21
TW454185B (en) 2001-09-11
JP4574010B2 (ja) 2010-11-04
EP1105879A1 (de) 2001-06-13
JP2002522864A (ja) 2002-07-23
WO2000008650A1 (en) 2000-02-17
EP1105879B1 (de) 2006-03-01
DE69930129T2 (de) 2006-08-31
US6111781A (en) 2000-08-29

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee