DE60205569D1 - MRAM mit gestapelten Speicherzellen - Google Patents
MRAM mit gestapelten SpeicherzellenInfo
- Publication number
- DE60205569D1 DE60205569D1 DE60205569T DE60205569T DE60205569D1 DE 60205569 D1 DE60205569 D1 DE 60205569D1 DE 60205569 T DE60205569 T DE 60205569T DE 60205569 T DE60205569 T DE 60205569T DE 60205569 D1 DE60205569 D1 DE 60205569D1
- Authority
- DE
- Germany
- Prior art keywords
- mram
- memory cells
- stacked memory
- stacked
- cells
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1653—Address circuits or decoders
- G11C11/1657—Word-line or row circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/10—Decoders
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/10—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having two electrodes, e.g. diodes or MIM elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001390549 | 2001-12-21 | ||
JP2001390549 | 2001-12-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60205569D1 true DE60205569D1 (de) | 2005-09-22 |
DE60205569T2 DE60205569T2 (de) | 2006-05-18 |
Family
ID=19188387
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60205569T Expired - Lifetime DE60205569T2 (de) | 2001-12-21 | 2002-06-05 | MRAM mit gestapelten Speicherzellen |
Country Status (6)
Country | Link |
---|---|
US (4) | US20030123271A1 (de) |
EP (1) | EP1321941B1 (de) |
KR (1) | KR100509774B1 (de) |
CN (1) | CN1294596C (de) |
DE (1) | DE60205569T2 (de) |
TW (1) | TW582033B (de) |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002246567A (ja) * | 2001-02-14 | 2002-08-30 | Toshiba Corp | 磁気ランダムアクセスメモリ |
JP2002299575A (ja) * | 2001-03-29 | 2002-10-11 | Toshiba Corp | 半導体記憶装置 |
US6795334B2 (en) * | 2001-12-21 | 2004-09-21 | Kabushiki Kaisha Toshiba | Magnetic random access memory |
US6940748B2 (en) | 2002-05-16 | 2005-09-06 | Micron Technology, Inc. | Stacked 1T-nMTJ MRAM structure |
US7042749B2 (en) | 2002-05-16 | 2006-05-09 | Micron Technology, Inc. | Stacked 1T-nmemory cell structure |
WO2003098636A2 (en) * | 2002-05-16 | 2003-11-27 | Micron Technology, Inc. | STACKED 1T-nMEMORY CELL STRUCTURE |
US6754124B2 (en) * | 2002-06-11 | 2004-06-22 | Micron Technology, Inc. | Hybrid MRAM array structure and operation |
JP2004079632A (ja) * | 2002-08-12 | 2004-03-11 | Toshiba Corp | 半導体集積回路装置 |
JP3935049B2 (ja) * | 2002-11-05 | 2007-06-20 | 株式会社東芝 | 磁気記憶装置及びその製造方法 |
JP3766380B2 (ja) * | 2002-12-25 | 2006-04-12 | 株式会社東芝 | 磁気ランダムアクセスメモリ及びその磁気ランダムアクセスメモリのデータ読み出し方法 |
JP2004213771A (ja) * | 2002-12-27 | 2004-07-29 | Toshiba Corp | 磁気ランダムアクセスメモリ |
US20050248042A1 (en) * | 2004-05-04 | 2005-11-10 | Lee Jong-Eon | Semiconductor memory device |
KR100604913B1 (ko) | 2004-10-28 | 2006-07-28 | 삼성전자주식회사 | 멀티 비트 셀 어레이 구조를 가지는 마그네틱 램 |
JP2006165327A (ja) * | 2004-12-08 | 2006-06-22 | Toshiba Corp | 磁気ランダムアクセスメモリ |
JP4591821B2 (ja) * | 2005-02-09 | 2010-12-01 | エルピーダメモリ株式会社 | 半導体装置 |
KR100697282B1 (ko) * | 2005-03-28 | 2007-03-20 | 삼성전자주식회사 | 저항 메모리 셀, 그 형성 방법 및 이를 이용한 저항 메모리배열 |
US7286393B2 (en) * | 2005-03-31 | 2007-10-23 | Honeywell International Inc. | System and method for hardening MRAM bits |
JP2008034456A (ja) | 2006-07-26 | 2008-02-14 | Toshiba Corp | 不揮発性半導体記憶装置 |
US7911830B2 (en) * | 2007-05-17 | 2011-03-22 | Integrated Magnetoelectronics | Scalable nonvolatile memory |
JP2009043804A (ja) * | 2007-08-07 | 2009-02-26 | Panasonic Corp | 半導体記憶装置、メモリ搭載lsi、及び半導体記憶装置の製造方法 |
US8072792B2 (en) * | 2008-02-15 | 2011-12-06 | Qimonda Ag | Integrated circuit with resistive memory cells and method for manufacturing same |
US8159870B2 (en) * | 2008-04-04 | 2012-04-17 | Qualcomm Incorporated | Array structural design of magnetoresistive random access memory (MRAM) bit cells |
US20150021724A1 (en) | 2011-04-11 | 2015-01-22 | Magsil Corporation | Self contacting bit line to mram cell |
US8638605B2 (en) | 2011-05-25 | 2014-01-28 | Micron Technology, Inc. | Apparatus and methods including a bipolar junction transistor coupled to a string of memory cells |
JP5543027B2 (ja) * | 2011-06-10 | 2014-07-09 | 株式会社日立製作所 | 半導体記憶装置 |
JP2014049547A (ja) * | 2012-08-30 | 2014-03-17 | Toshiba Corp | 半導体記憶装置 |
US9165631B2 (en) * | 2012-09-13 | 2015-10-20 | Qualcomm Incorporated | OTP scheme with multiple magnetic tunnel junction devices in a cell |
KR101967352B1 (ko) * | 2012-10-31 | 2019-04-10 | 삼성전자주식회사 | 자기 메모리 소자 및 그 제조 방법 |
US8901687B2 (en) | 2012-11-27 | 2014-12-02 | Industrial Technology Research Institute | Magnetic device with a substrate, a sensing block and a repair layer |
CN105070314A (zh) * | 2015-08-24 | 2015-11-18 | 西安电子科技大学宁波信息技术研究院 | 一种用于提高自旋磁随机存储器读取可靠性的电路 |
US9679643B1 (en) * | 2016-03-09 | 2017-06-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Resistive memory device having a trimmable resistance of at least on of a driver and a sinker is trimmed based on a row location |
JP2019192869A (ja) * | 2018-04-27 | 2019-10-31 | 東芝メモリ株式会社 | 半導体記憶装置 |
JP2020042879A (ja) | 2018-09-12 | 2020-03-19 | キオクシア株式会社 | 磁気記憶装置 |
CN111293136A (zh) * | 2018-12-07 | 2020-06-16 | 中国科学院上海微系统与信息技术研究所 | 基于二维器件的三维mram存储结构及其制作方法 |
EP4075529A4 (de) * | 2020-01-15 | 2023-05-10 | Huawei Technologies Co., Ltd. | Magnetischer direktzugriffsspeicher und elektronisches gerät |
JP2022050059A (ja) * | 2020-09-17 | 2022-03-30 | キオクシア株式会社 | 磁気記憶装置及びメモリシステム |
US11488662B2 (en) * | 2020-11-16 | 2022-11-01 | Sandisk Technologies Llc | Concurrent multi-bit access in cross-point array |
US11763857B2 (en) * | 2021-05-14 | 2023-09-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory device and method of forming the same |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5837948A (ja) * | 1981-08-31 | 1983-03-05 | Toshiba Corp | 積層半導体記憶装置 |
EP0395886A2 (de) * | 1989-04-03 | 1990-11-07 | Olympus Optical Co., Ltd. | Speicherzelle und multidimensionale Speichereinrichtung, die durch die Anordnung der Speicherzellen konstituiert ist |
US5894447A (en) * | 1996-09-26 | 1999-04-13 | Kabushiki Kaisha Toshiba | Semiconductor memory device including a particular memory cell block structure |
TW411471B (en) * | 1997-09-17 | 2000-11-11 | Siemens Ag | Memory-cell device |
US6038091A (en) * | 1997-10-06 | 2000-03-14 | Cirrus Logic, Inc. | Magnetic disk drive read channel with digital thermal asperity detector |
DE19744095A1 (de) * | 1997-10-06 | 1999-04-15 | Siemens Ag | Speicherzellenanordnung |
US6169688B1 (en) * | 1998-03-23 | 2001-01-02 | Kabushiki Kaisha Toshiba | Magnetic storage device using unipole currents for selecting memory cells |
US5936882A (en) * | 1998-03-31 | 1999-08-10 | Motorola, Inc. | Magnetoresistive random access memory device and method of manufacture |
US6055179A (en) * | 1998-05-19 | 2000-04-25 | Canon Kk | Memory device utilizing giant magnetoresistance effect |
TW440835B (en) | 1998-09-30 | 2001-06-16 | Siemens Ag | Magnetoresistive memory with raised interference security |
US6111783A (en) * | 1999-06-16 | 2000-08-29 | Hewlett-Packard Company | MRAM device including write circuit for supplying word and bit line current having unequal magnitudes |
US6611405B1 (en) * | 1999-09-16 | 2003-08-26 | Kabushiki Kaisha Toshiba | Magnetoresistive element and magnetic memory device |
US6169668B1 (en) * | 1999-10-27 | 2001-01-02 | Space Systems/Loral, Inc. | Zero voltage switching isolated boost converters |
JP3913971B2 (ja) * | 1999-12-16 | 2007-05-09 | 株式会社東芝 | 磁気メモリ装置 |
JP2001217398A (ja) | 2000-02-03 | 2001-08-10 | Rohm Co Ltd | 強磁性トンネル接合素子を用いた記憶装置 |
JP3877490B2 (ja) | 2000-03-28 | 2007-02-07 | 株式会社東芝 | 磁気素子およびその製造方法 |
US6205073B1 (en) * | 2000-03-31 | 2001-03-20 | Motorola, Inc. | Current conveyor and method for readout of MTJ memories |
DE10020128A1 (de) * | 2000-04-14 | 2001-10-18 | Infineon Technologies Ag | MRAM-Speicher |
JP4477199B2 (ja) * | 2000-06-16 | 2010-06-09 | 株式会社ルネサステクノロジ | 磁気ランダムアクセスメモリ、磁気ランダムアクセスメモリへのアクセス方法および磁気ランダムアクセスメモリの製造方法 |
US6335890B1 (en) * | 2000-11-01 | 2002-01-01 | International Business Machines Corporation | Segmented write line architecture for writing magnetic random access memories |
JP4667594B2 (ja) * | 2000-12-25 | 2011-04-13 | ルネサスエレクトロニクス株式会社 | 薄膜磁性体記憶装置 |
US6611453B2 (en) * | 2001-01-24 | 2003-08-26 | Infineon Technologies Ag | Self-aligned cross-point MRAM device with aluminum metallization layers |
US6356477B1 (en) * | 2001-01-29 | 2002-03-12 | Hewlett Packard Company | Cross point memory array including shared devices for blocking sneak path currents |
US6385109B1 (en) * | 2001-01-30 | 2002-05-07 | Motorola, Inc. | Reference voltage generator for MRAM and method |
US6512690B1 (en) * | 2001-08-15 | 2003-01-28 | Read-Rite Corporation | High sensitivity common source amplifier MRAM cell, memory array and read/write scheme |
US6445612B1 (en) * | 2001-08-27 | 2002-09-03 | Motorola, Inc. | MRAM with midpoint generator reference and method for readout |
US6574129B1 (en) * | 2002-04-30 | 2003-06-03 | Hewlett-Packard Development Company, L.P. | Resistive cross point memory cell arrays having a cross-couple latch sense amplifier |
US6597598B1 (en) * | 2002-04-30 | 2003-07-22 | Hewlett-Packard Development Company, L.P. | Resistive cross point memory arrays having a charge injection differential sense amplifier |
-
2002
- 2002-06-05 EP EP02012346A patent/EP1321941B1/de not_active Expired - Lifetime
- 2002-06-05 DE DE60205569T patent/DE60205569T2/de not_active Expired - Lifetime
- 2002-06-06 US US10/162,605 patent/US20030123271A1/en not_active Abandoned
- 2002-12-12 TW TW091135959A patent/TW582033B/zh not_active IP Right Cessation
- 2002-12-20 CN CNB021575460A patent/CN1294596C/zh not_active Expired - Fee Related
- 2002-12-20 KR KR10-2002-0081689A patent/KR100509774B1/ko not_active IP Right Cessation
-
2004
- 2004-11-04 US US10/980,849 patent/US6990004B2/en not_active Expired - Fee Related
- 2004-11-04 US US10/980,270 patent/US20050083730A1/en not_active Abandoned
- 2004-11-04 US US10/980,847 patent/US7064975B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US6990004B2 (en) | 2006-01-24 |
US7064975B2 (en) | 2006-06-20 |
CN1294596C (zh) | 2007-01-10 |
KR20030053051A (ko) | 2003-06-27 |
TW200304144A (en) | 2003-09-16 |
DE60205569T2 (de) | 2006-05-18 |
KR100509774B1 (ko) | 2005-08-24 |
US20050083731A1 (en) | 2005-04-21 |
US20030123271A1 (en) | 2003-07-03 |
TW582033B (en) | 2004-04-01 |
EP1321941A1 (de) | 2003-06-25 |
US20050083730A1 (en) | 2005-04-21 |
EP1321941B1 (de) | 2005-08-17 |
CN1428785A (zh) | 2003-07-09 |
US20050083734A1 (en) | 2005-04-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |