DE69909969D1 - Unflüchtiger Speicher mit Zeilenredundanz - Google Patents

Unflüchtiger Speicher mit Zeilenredundanz

Info

Publication number
DE69909969D1
DE69909969D1 DE69909969T DE69909969T DE69909969D1 DE 69909969 D1 DE69909969 D1 DE 69909969D1 DE 69909969 T DE69909969 T DE 69909969T DE 69909969 T DE69909969 T DE 69909969T DE 69909969 D1 DE69909969 D1 DE 69909969D1
Authority
DE
Germany
Prior art keywords
volatile memory
line redundancy
redundancy
line
volatile
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69909969T
Other languages
English (en)
Inventor
Giovanni Campardo
Alessandro Manstretta
Rino Micheloni
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE69909969D1 publication Critical patent/DE69909969D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
    • G11C29/846—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by choosing redundant lines at an output stage
DE69909969T 1999-05-12 1999-05-12 Unflüchtiger Speicher mit Zeilenredundanz Expired - Lifetime DE69909969D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP99830286A EP1052572B1 (de) 1999-05-12 1999-05-12 Unflüchtiger Speicher mit Zeilenredundanz

Publications (1)

Publication Number Publication Date
DE69909969D1 true DE69909969D1 (de) 2003-09-04

Family

ID=8243403

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69909969T Expired - Lifetime DE69909969D1 (de) 1999-05-12 1999-05-12 Unflüchtiger Speicher mit Zeilenredundanz

Country Status (4)

Country Link
US (1) US6301152B1 (de)
EP (1) EP1052572B1 (de)
JP (1) JP4757978B2 (de)
DE (1) DE69909969D1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1126372B1 (de) * 2000-02-14 2005-05-18 STMicroelectronics S.r.l. Nichtflüchtige Speicheranordnung mit konfigurierbarer Zeilenredundanz
JP2002150789A (ja) * 2000-11-09 2002-05-24 Hitachi Ltd 不揮発性半導体記憶装置
US6711056B2 (en) * 2001-03-12 2004-03-23 Micron Technology, Inc. Memory with row redundancy
US6584034B1 (en) * 2001-04-23 2003-06-24 Aplus Flash Technology Inc. Flash memory array structure suitable for multiple simultaneous operations
JP3851856B2 (ja) * 2002-09-06 2006-11-29 株式会社東芝 半導体記憶装置
US6771541B1 (en) 2003-02-25 2004-08-03 Nexflash Technologies, Inc. Method and apparatus for providing row redundancy in nonvolatile semiconductor memory
EP1624463A1 (de) * 2004-07-14 2006-02-08 STMicroelectronics S.r.l. Ein programmierbarer Speicher mit verbesserter Redundanz-Struktur
US7340665B2 (en) * 2005-06-28 2008-03-04 Seagate Technology Llc Shared redundancy in error correcting code
JP2009187641A (ja) * 2008-02-08 2009-08-20 Elpida Memory Inc 半導体記憶装置及びその制御方法、並びに不良アドレスの救済可否判定方法
US8799598B2 (en) * 2012-02-17 2014-08-05 Spansion Llc Redundancy loading efficiency
US8793558B2 (en) 2012-08-27 2014-07-29 Freescale Semiconductor, Inc. Adaptive error correction for non-volatile memories
US10340010B2 (en) 2016-08-16 2019-07-02 Silicon Storage Technology, Inc. Method and apparatus for configuring array columns and rows for accessing flash memory cells
CN108418589B (zh) * 2018-03-05 2020-07-10 华中科技大学 一种单层非易失存储器的动态编解码方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0380500A (ja) * 1989-08-24 1991-04-05 Sharp Corp 半導体記憶装置
JPH0485797A (ja) * 1990-07-26 1992-03-18 Sharp Corp 半導体記憶装置
JPH04369265A (ja) * 1991-06-18 1992-12-22 Sharp Corp 半導体記憶装置
KR940008211B1 (ko) * 1991-08-21 1994-09-08 삼성전자 주식회사 반도체메모리장치의 리던던트 셀 어레이 배열방법
JPH05290570A (ja) * 1992-04-13 1993-11-05 Hitachi Ltd 半導体メモリ
JP2740726B2 (ja) * 1992-09-30 1998-04-15 松下電器産業株式会社 半導体集積回路
JPH08111099A (ja) * 1994-08-16 1996-04-30 Sanyo Electric Co Ltd 記憶装置
DE69520665T2 (de) * 1995-05-05 2001-08-30 Stmicroelectronics S.R.L., Agrate Brianza Anordnung von nichtflüchtigen EEPROM,insbesondere Flash-EEPROM
JPH10241396A (ja) * 1996-12-26 1998-09-11 Sony Corp 半導体不揮発性記憶装置
KR100252053B1 (ko) * 1997-12-04 2000-05-01 윤종용 칼럼 방향의 데이터 입출력선을 가지는 반도체메모리장치와불량셀 구제회로 및 방법
JP3204200B2 (ja) * 1998-02-25 2001-09-04 日本電気株式会社 半導体メモリ装置
JP4255144B2 (ja) * 1998-05-28 2009-04-15 株式会社ルネサステクノロジ 半導体記憶装置
US6128244A (en) * 1998-06-04 2000-10-03 Micron Technology, Inc. Method and apparatus for accessing one of a plurality of memory units within an electronic memory device
JP2000011681A (ja) * 1998-06-22 2000-01-14 Mitsubishi Electric Corp 同期型半導体記憶装置
JP2000113696A (ja) * 1998-10-06 2000-04-21 Hitachi Ltd 半導体集積回路装置
JP3779480B2 (ja) * 1999-02-10 2006-05-31 Ｎｅｃエレクトロニクス株式会社 半導体記憶装置
JP4607360B2 (ja) * 2001-03-22 2011-01-05 Ｏｋｉセミコンダクタ株式会社 半導体記憶装置

Also Published As

Publication number Publication date
JP4757978B2 (ja) 2011-08-24
US6301152B1 (en) 2001-10-09
JP2000357396A (ja) 2000-12-26
EP1052572A1 (de) 2000-11-15
EP1052572B1 (de) 2003-07-30

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