ATE538474T1 - System und verfahren zum schreiben von daten auf magnetoresistive direktzugriffsspeicherzellen - Google Patents

System und verfahren zum schreiben von daten auf magnetoresistive direktzugriffsspeicherzellen

Info

Publication number
ATE538474T1
ATE538474T1 AT09157306T AT09157306T ATE538474T1 AT E538474 T1 ATE538474 T1 AT E538474T1 AT 09157306 T AT09157306 T AT 09157306T AT 09157306 T AT09157306 T AT 09157306T AT E538474 T1 ATE538474 T1 AT E538474T1
Authority
AT
Austria
Prior art keywords
random access
access memory
magnetic
magnetorresistive
memory cells
Prior art date
Application number
AT09157306T
Other languages
English (en)
Inventor
Neal Berger
Virgile Javerliac
Original Assignee
Crocus Technology Sa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Crocus Technology Sa filed Critical Crocus Technology Sa
Application granted granted Critical
Publication of ATE538474T1 publication Critical patent/ATE538474T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
AT09157306T 2008-04-07 2009-04-03 System und verfahren zum schreiben von daten auf magnetoresistive direktzugriffsspeicherzellen ATE538474T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US4303808P 2008-04-07 2008-04-07

Publications (1)

Publication Number Publication Date
ATE538474T1 true ATE538474T1 (de) 2012-01-15

Family

ID=40933614

Family Applications (1)

Application Number Title Priority Date Filing Date
AT09157306T ATE538474T1 (de) 2008-04-07 2009-04-03 System und verfahren zum schreiben von daten auf magnetoresistive direktzugriffsspeicherzellen

Country Status (4)

Country Link
US (1) US8169815B2 (de)
EP (1) EP2109111B1 (de)
JP (1) JP5319369B2 (de)
AT (1) ATE538474T1 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI449040B (zh) 2006-10-06 2014-08-11 Crocus Technology Sa 用於提供內容可定址的磁阻式隨機存取記憶體單元之系統及方法
ATE538474T1 (de) 2008-04-07 2012-01-15 Crocus Technology Sa System und verfahren zum schreiben von daten auf magnetoresistive direktzugriffsspeicherzellen
EP2124228B1 (de) 2008-05-20 2014-03-05 Crocus Technology Magnetischer Direktzugriffsspeicher mit einem elliptischen Tunnelübergang
US8031519B2 (en) 2008-06-18 2011-10-04 Crocus Technology S.A. Shared line magnetic random access memory cells
US8228703B2 (en) 2008-11-04 2012-07-24 Crocus Technology Sa Ternary Content Addressable Magnetoresistive random access memory cell
JP5432762B2 (ja) 2009-02-19 2014-03-05 クロッカス・テクノロジー・ソシエテ・アノニム アクティブストラップ式磁気ランダムアクセスメモリの記憶素子
EP2276034B1 (de) 2009-07-13 2016-04-27 Crocus Technology S.A. Selbstbezogene Magnetdirektzugriffsspeicherzelle
EP2405438B1 (de) 2010-07-07 2016-04-20 Crocus Technology S.A. Verfahren zum Schreiben in eine MRAM-basierten Speichervorrichtung mit reduziertem Energieverbrauch
EP2405439B1 (de) * 2010-07-07 2013-01-23 Crocus Technology S.A. Magnetische Vorrichtung mit optimierter Wärmeeingrenzung
US8400066B1 (en) 2010-08-01 2013-03-19 Lawrence T. Pileggi Magnetic logic circuits and systems incorporating same
EP2546836A1 (de) * 2011-07-12 2013-01-16 Crocus Technology S.A. Magnetische Direktzugriffsspeicherzelle mit verbesserter Verteilung des Schaltfelds
US8611141B2 (en) * 2011-09-21 2013-12-17 Crocus Technology Inc. Magnetic random access memory devices including heating straps
EP2575136B1 (de) * 2011-09-30 2014-12-24 Crocus Technology S.A. Selbstbezogene Magnetdirektzugriffsspeicherzelle mit ferromagnetischen Schichten
EP2615610B1 (de) * 2012-01-16 2016-11-02 Crocus Technology S.A. MRAM-Zelle und Verfahren zum Beschreiben einer MRAM-Zelle unter Verwendung einer wärmeunterstützten Schreiboperation mit reduziertem Feldstrom
US20140124880A1 (en) 2012-11-06 2014-05-08 International Business Machines Corporation Magnetoresistive random access memory
US8750033B2 (en) 2012-11-06 2014-06-10 International Business Machines Corporation Reading a cross point cell array
EP2741296B1 (de) 2012-12-07 2019-01-30 Crocus Technology S.A. Selbstbezogene Magnetdirektzugriffsspeicherzelle (MRAM) und Verfahren zum Schreiben in die MRAM-Zelle mit erhöhter Zuverlässigkeit und verringertem Stromverbrauch
US8917531B2 (en) 2013-03-14 2014-12-23 International Business Machines Corporation Cell design for embedded thermally-assisted MRAM
EP2804180A1 (de) * 2013-05-15 2014-11-19 Crocus Technology S.A. Mehrstufiger MRAM für geringen Stromverbrauch und zuverlässiger Schreiboperation
US9331123B2 (en) * 2014-05-09 2016-05-03 Tower Semiconductor Ltd. Logic unit including magnetic tunnel junction elements having two different anti-ferromagnetic layers
US9330748B2 (en) 2014-05-09 2016-05-03 Tower Semiconductor Ltd. High-speed compare operation using magnetic tunnel junction elements including two different anti-ferromagnetic layers
US9947383B1 (en) * 2017-02-23 2018-04-17 International Business Machines Corporation Spin hall write select for magneto-resistive random access memory

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4078696B2 (ja) 1997-11-28 2008-04-23 松下電器産業株式会社 記録許可判定装置及び情報記録装置
US6317349B1 (en) * 1999-04-16 2001-11-13 Sandisk Corporation Non-volatile content addressable memory
US6535416B1 (en) * 1999-06-18 2003-03-18 Nve Corporation Magnetic memory coincident thermal pulse data storage
US6191973B1 (en) * 1999-09-27 2001-02-20 Motorola Inc. Mram cam
AU5216801A (en) * 2000-03-16 2001-09-24 Hoffmann La Roche Carboxylic acid derivatives as ip antagonists
US6269016B1 (en) * 2000-06-19 2001-07-31 Motorola Inc. MRAM cam
US6385082B1 (en) * 2000-11-08 2002-05-07 International Business Machines Corp. Thermally-assisted magnetic random access memory (MRAM)
US6724674B2 (en) * 2000-11-08 2004-04-20 International Business Machines Corporation Memory storage device with heating element
JP4726292B2 (ja) * 2000-11-14 2011-07-20 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
FR2817998B1 (fr) 2000-12-07 2003-01-10 Commissariat Energie Atomique Dispositif magnetique a polarisation de spin et a rotation d'aimantation, memoire et procede d'ecriture utilisant ce dispositif
FR2817999B1 (fr) * 2000-12-07 2003-01-10 Commissariat Energie Atomique Dispositif magnetique a polarisation de spin et a empilement(s) tri-couche(s) et memoire utilisant ce dispositif
JP3920564B2 (ja) * 2000-12-25 2007-05-30 株式会社東芝 磁気ランダムアクセスメモリ
US6304477B1 (en) * 2001-01-31 2001-10-16 Motorola, Inc. Content addressable magnetic random access memory
US6760249B2 (en) * 2001-06-21 2004-07-06 Pien Chien Content addressable memory device capable of comparing data bit with storage data bit
FR2829867B1 (fr) 2001-09-20 2003-12-19 Centre Nat Rech Scient Memoire magnetique a selection a l'ecriture par inhibition et procede pour son ecriture
FR2829868A1 (fr) 2001-09-20 2003-03-21 Centre Nat Rech Scient Memoire magnetique a ecriture par courant polarise en spin, mettant en oeuvre des alliages amorphes ferrimagnetiques et procede pour son ecriture
FR2832542B1 (fr) 2001-11-16 2005-05-06 Commissariat Energie Atomique Dispositif magnetique a jonction tunnel magnetique, memoire et procedes d'ecriture et de lecture utilisant ce dispositif
US6750491B2 (en) 2001-12-20 2004-06-15 Hewlett-Packard Development Company, L.P. Magnetic memory device having soft reference layer
JP4182728B2 (ja) * 2002-11-15 2008-11-19 ソニー株式会社 磁気記憶素子の記録方法、磁気記憶装置
US6771534B2 (en) * 2002-11-15 2004-08-03 International Business Machines Corporation Thermally-assisted magnetic writing using an oxide layer and current-induced heating
US7173846B2 (en) * 2003-02-13 2007-02-06 Taiwan Semiconductor Manufacturing Company, Ltd. Magnetic RAM and array architecture using a two transistor, one MTJ cell
WO2005001490A2 (en) 2003-06-23 2005-01-06 Nve Corporation Thermally operated switch control memory cell
JP2005064050A (ja) 2003-08-14 2005-03-10 Toshiba Corp 半導体記憶装置及びそのデータ書き込み方法
KR100568512B1 (ko) * 2003-09-29 2006-04-07 삼성전자주식회사 열발생층을 갖는 자기열 램셀들 및 이를 구동시키는 방법들
FR2860910B1 (fr) 2003-10-10 2006-02-10 Commissariat Energie Atomique Dispositif a jonction tunnel magnetique et procede d'ecriture/lecture d'un tel dispositif
JP5015600B2 (ja) 2003-10-14 2012-08-29 エージェンシー フォー サイエンス，テクノロジー アンド リサーチ 磁気メモリデバイス
US7012832B1 (en) * 2003-10-31 2006-03-14 Western Digital (Fremont), Inc. Magnetic memory cell with plural read transistors
FR2866750B1 (fr) * 2004-02-23 2006-04-21 Centre Nat Rech Scient Memoire magnetique a jonction tunnel magnetique et procede pour son ecriture
FR2867300B1 (fr) * 2004-03-05 2006-04-28 Commissariat Energie Atomique Memoire vive magnetoresistive a haute densite de courant
US7345911B2 (en) * 2006-02-14 2008-03-18 Magic Technologies, Inc. Multi-state thermally assisted storage
US7457149B2 (en) * 2006-05-05 2008-11-25 Macronix International Co., Ltd. Methods and apparatus for thermally assisted programming of a magnetic memory device
US7532505B1 (en) * 2006-07-17 2009-05-12 Grandis, Inc. Method and system for using a pulsed field to assist spin transfer induced switching of magnetic memory elements
TWI449040B (zh) * 2006-10-06 2014-08-11 Crocus Technology Sa 用於提供內容可定址的磁阻式隨機存取記憶體單元之系統及方法
ATE538474T1 (de) 2008-04-07 2012-01-15 Crocus Technology Sa System und verfahren zum schreiben von daten auf magnetoresistive direktzugriffsspeicherzellen

Also Published As

Publication number Publication date
US20090251957A1 (en) 2009-10-08
JP5319369B2 (ja) 2013-10-16
US8169815B2 (en) 2012-05-01
JP2009302515A (ja) 2009-12-24
EP2109111B1 (de) 2011-12-21
EP2109111A1 (de) 2009-10-14

Similar Documents

Publication Publication Date Title
ATE538474T1 (de) System und verfahren zum schreiben von daten auf magnetoresistive direktzugriffsspeicherzellen
EP3462456B1 (de) Verfahren zum schreiben auf spin-torque-mram
ATE544153T1 (de) Magnetischer speicher mit wärmeunterstütztem schreibverfahren und niedrigem schreibstrom
US20180151210A1 (en) Shared source line architectures of perpendicular hybrid spin-torque transfer (stt) and spin-orbit torque (sot) magnetic random access memory
TW201543478A (zh) 高密度低功率混合巨大自旋霍爾效應之自旋力矩轉移（ｇｓｈｅ－ｓｔｔ）之磁阻隨機存取記憶體
TW200802365A (en) Semiconductor device
RU2599941C2 (ru) Ячейка mram и способ для записи в ячейку mram с использованием термической операции записи с пониженным током поля
RU2011127847A (ru) Магнитное устройство с оптимизированным ограничением тепла
TW200509367A (en) Semiconductor memory apparatus having magneto-resistive device and its method of writing data
RU2011143175A (ru) Термический магнитный элемент памяти с произвольным доступом с увеличенной долговечностью
WO2005096313A3 (en) Separate write and read access architecture for magnetic tunnel junction
US20100061135A1 (en) Magnetic wire unit and storage device
JP2003188358A5 (de)
ATE545133T1 (de) Magnetischer speicher mit wärmeunterstütztem schreibverfahren und eingeschränktem schreibfeld
RU2010136657A (ru) Ячейка магнитного туннельного перехода, содержащая множество магнитных доменов
TW200727295A (en) A structure and method for a magnetic memory device with proximity writing
JP2013138202A (ja) スピン注入書き込み操作を使用してセルに書き込むための自己参照磁気ランダムアクセスメモリセル及び方法
RU2012150042A (ru) Самоотносимая ячейка mram с оптимизированной надежностью
SG185894A1 (en) A current writing circuit for a resistive memory cell arrangement
JP2003338610A (ja) マグネティックｒａｍ
US20150179245A1 (en) Method for writing to a random access memory (mram) cell with improved mram cell lifespan
KR101119160B1 (ko) 자기 메모리 셀
US20100039849A1 (en) Read/write elements for a three-dimensional magnetic memory
KR20090105021A (ko) 자기 메모리 셀
Parkin Tunneling into the future: magnetic random access memory