ATE545133T1 - Magnetischer speicher mit wärmeunterstütztem schreibverfahren und eingeschränktem schreibfeld - Google Patents

Magnetischer speicher mit wärmeunterstütztem schreibverfahren und eingeschränktem schreibfeld

Info

Publication number
ATE545133T1
ATE545133T1 AT09290339T AT09290339T ATE545133T1 AT E545133 T1 ATE545133 T1 AT E545133T1 AT 09290339 T AT09290339 T AT 09290339T AT 09290339 T AT09290339 T AT 09290339T AT E545133 T1 ATE545133 T1 AT E545133T1
Authority
AT
Austria
Prior art keywords
ferromagnetic
tas
layer
tunnel junction
mram
Prior art date
Application number
AT09290339T
Other languages
English (en)
Inventor
Ioan Lucian Prejbeanu
Clarisse Ducruet
Original Assignee
Crocus Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Crocus Technology filed Critical Crocus Technology
Application granted granted Critical
Publication of ATE545133T1 publication Critical patent/ATE545133T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
AT09290339T 2009-05-08 2009-05-08 Magnetischer speicher mit wärmeunterstütztem schreibverfahren und eingeschränktem schreibfeld ATE545133T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP09290339A EP2249349B1 (de) 2009-05-08 2009-05-08 Magnetischer Speicher mit wärmeunterstütztem Schreibverfahren und eingeschränktem Schreibfeld

Publications (1)

Publication Number Publication Date
ATE545133T1 true ATE545133T1 (de) 2012-02-15

Family

ID=41128268

Family Applications (1)

Application Number Title Priority Date Filing Date
AT09290339T ATE545133T1 (de) 2009-05-08 2009-05-08 Magnetischer speicher mit wärmeunterstütztem schreibverfahren und eingeschränktem schreibfeld

Country Status (4)

Country Link
US (1) US8391053B2 (de)
EP (1) EP2249349B1 (de)
JP (1) JP5653649B2 (de)
AT (1) ATE545133T1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8482967B2 (en) * 2010-11-03 2013-07-09 Seagate Technology Llc Magnetic memory element with multi-domain storage layer
EP2466586B1 (de) * 2010-12-16 2016-03-02 Crocus Technology Magnetische Multibit-Direktzugriffsspeicherzelle mit verbessertem Lesebereich
CN102147295B (zh) * 2011-01-14 2012-08-22 北方工业大学 基于磁隧道结器件的温度传感器
EP2479759A1 (de) * 2011-01-19 2012-07-25 Crocus Technology S.A. Stromsparende Magnetdirektzugriffsspeicherzelle
KR101962784B1 (ko) 2012-10-09 2019-03-27 삼성전자주식회사 온도에 따라 차별화된 리드 동작 및 라이트 동작을 갖는 반도체 메모리 장치
WO2015042033A1 (en) * 2013-09-19 2015-03-26 University Of Pittsburgh-Of The Commonwealth System Of Higher Education Magnetic-assisted nondestructive self-reference sensing method for spin-transfer torque random access memory
US8824200B1 (en) * 2013-12-17 2014-09-02 The United States Of America As Represented By The Secretary Of The Army Nonvolative memory cells programable by phase change
US9330748B2 (en) 2014-05-09 2016-05-03 Tower Semiconductor Ltd. High-speed compare operation using magnetic tunnel junction elements including two different anti-ferromagnetic layers
US9331123B2 (en) * 2014-05-09 2016-05-03 Tower Semiconductor Ltd. Logic unit including magnetic tunnel junction elements having two different anti-ferromagnetic layers

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3820475C1 (de) 1988-06-16 1989-12-21 Kernforschungsanlage Juelich Gmbh, 5170 Juelich, De
US5159513A (en) 1991-02-08 1992-10-27 International Business Machines Corporation Magnetoresistive sensor based on the spin valve effect
US5343422A (en) 1993-02-23 1994-08-30 International Business Machines Corporation Nonvolatile magnetoresistive storage device using spin valve effect
US5583725A (en) 1994-06-15 1996-12-10 International Business Machines Corporation Spin valve magnetoresistive sensor with self-pinned laminated layer and magnetic recording system using the sensor
US5640343A (en) 1996-03-18 1997-06-17 International Business Machines Corporation Magnetic memory array using magnetic tunnel junction devices in the memory cells
US5959880A (en) 1997-12-18 1999-09-28 Motorola, Inc. Low aspect ratio magnetoresistive tunneling junction
FR2817999B1 (fr) * 2000-12-07 2003-01-10 Commissariat Energie Atomique Dispositif magnetique a polarisation de spin et a empilement(s) tri-couche(s) et memoire utilisant ce dispositif
FR2832542B1 (fr) 2001-11-16 2005-05-06 Commissariat Energie Atomique Dispositif magnetique a jonction tunnel magnetique, memoire et procedes d'ecriture et de lecture utilisant ce dispositif
US7110287B2 (en) * 2004-02-13 2006-09-19 Grandis, Inc. Method and system for providing heat assisted switching of a magnetic element utilizing spin transfer
FR2866750B1 (fr) * 2004-02-23 2006-04-21 Centre Nat Rech Scient Memoire magnetique a jonction tunnel magnetique et procede pour son ecriture
US6992359B2 (en) * 2004-02-26 2006-01-31 Grandis, Inc. Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization
US7582923B2 (en) * 2004-11-16 2009-09-01 Nec Corporation Magnetic memory and manufacturing method for the same
TWI283477B (en) * 2004-11-16 2007-07-01 Ind Tech Res Inst Magnetic random access memory with lower switching field
US7502253B2 (en) * 2006-08-28 2009-03-10 Everspin Technologies, Inc. Spin-transfer based MRAM with reduced critical current density
TWI449040B (zh) * 2006-10-06 2014-08-11 Crocus Technology Sa 用於提供內容可定址的磁阻式隨機存取記憶體單元之系統及方法

Also Published As

Publication number Publication date
EP2249349A1 (de) 2010-11-10
US20100284215A1 (en) 2010-11-11
JP5653649B2 (ja) 2015-01-14
US8391053B2 (en) 2013-03-05
EP2249349B1 (de) 2012-02-08
JP2010263220A (ja) 2010-11-18

Similar Documents

Publication Publication Date Title
ATE544153T1 (de) Magnetischer speicher mit wärmeunterstütztem schreibverfahren und niedrigem schreibstrom
ATE545133T1 (de) Magnetischer speicher mit wärmeunterstütztem schreibverfahren und eingeschränktem schreibfeld
US8169815B2 (en) System and method for writing data to magnetoresistive random access memory cells
JP5057254B2 (ja) 磁気メモリー素子、その駆動方法及び不揮発性記憶装置
US9178137B2 (en) Magnetoresistive element and magnetic memory
ATE528764T1 (de) Magnetoresistive tcam-direktzugriffsspeicherzelle
US8289765B2 (en) Active strap magnetic random access memory cells configured to perform thermally-assisted writing
EP2276034A3 (de) Selbstbezogene Magnetdirektzugriffsspeicherzelle
US8837209B2 (en) Magnetic memory cell and magnetic random access memory
DE602005016749D1 (de) Magnetisches Speicherzellenfeld mit benachbarter gekoppelter weichmagnetischer Schicht
JP5709329B2 (ja) 不揮発記憶装置
JP2012094870A (ja) 耐久性が改良された熱アシスト磁気ランダムアクセスメモリ素子
RU2013100988A (ru) Ячейка mram и способ для записи в ячейку mram с использованием термической операции записи с пониженным током поля
US9076960B2 (en) Magnetic memory element
JP2013110417A (ja) 最適化された信頼性を有する自己参照ｍｒａｍセル
CN101777569B (zh) 磁存储单元
CN102315255B (zh) 一种自旋场效应晶体管及其磁性存储器
US10650874B2 (en) Magnetic memory device with enhanced write performance and operation method thereof
Zeinali et al. Multilevel SOT-MRAM cell with a novel sensing scheme for high-density memory applications
JP5442121B2 (ja) 磁気メモリセル及び磁気ランダムアクセスメモリ
KR101474665B1 (ko) 스핀 전달 토크 자기터널접합 소자, 그 동작 방법 및 그를 채용하는 자기저항 메모리 소자
US9424903B2 (en) Memory apparatus and memory device
Sharad et al. Domain-wall shift based multi-level mram for high-speed, high-density and energy-efficient caches
Kim et al. Switching and reliability issues of magnetic tunnel junctions for high-density memory device
Sharad et al. Reading spin-torque memory with spin-torque sensors