JP2012094870A - 耐久性が改良された熱アシスト磁気ランダムアクセスメモリ素子 - Google Patents
耐久性が改良された熱アシスト磁気ランダムアクセスメモリ素子 Download PDFInfo
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Abstract
【解決手段】 本発明は、熱アシストスイッチング書き込み操作に適した磁気メモリ素子であって、磁気トンネル接合の一端と電気的に連絡した電流線を備え、磁気トンネル接合が、固定磁化を有する第1の強磁性層と、所定の高温しきい値で自由に整列させることができる磁化を有する第2の強磁性層と、第1の強磁性層と第2の強磁性層の間に提供されたトンネル障壁とを備え、電流線が、書き込み操作中に磁気トンネル接合を通して加熱電流を流すように適合され、前記磁気トンネル接合が、加熱電流が磁気トンネル接合を通して流されるときに熱を発生するように適合された少なくとも1つの加熱要素と、前記少なくとも1つの加熱要素と直列の熱障壁とをさらに備え、前記熱障壁が、磁気トンネル接合内部で前記少なくとも1つの加熱要素によって発生する熱を閉じ込めるように適合される磁気メモリ素子に関する。
【選択図】 図1
Description
・ スタティックランダムアクセスメモリ(SRAM)と同等の速度
・ フラッシュメモリと同様の不揮発性
・ 経時的な読み出し及び書き込み劣化がないこと
・ 電離放射線に対する不感受性
・ 書き込みすべきメモリ点のみが加熱されることによる書き込み選択性の大幅な改良
・ メモリ点が周囲温度で寄生磁場を受けるときでさえ、メモリに書き込まれた情報を維持すること
・ (本来的に、又は記憶層をピン止めする反強磁性層の交換異方性磁場により)周囲温度で強い磁気異方性を有する材料を使用することによる、情報の熱的安定性の改良
・ 周囲温度で強い磁気異方性を有する材料、又は交換異方性によってピン止めされた記憶層を使用することによって、安定性限界に影響を及ぼすことなくメモリ点セルのサイズを大幅に減少させる可能性があること
・ 書き込み中の消費の減少
・ 特定の環境でマルチレベル記憶セルを得る可能性があること
電流線4で加熱電流31を磁気トンネル接合2に流すことによって、磁気トンネル接合2を加熱するステップと、
磁気トンネル接合2が所定の高温しきい値に達した後、記憶層23の磁化を整列させるステップと、
整列された方向で記憶層の磁化を凍結させるために、加熱電流31をオフすることによって磁気トンネル接合2を冷却するステップと、
を含むことができる。
2 磁気トンネル接合
20 反強磁性基準層
21 第1の強磁性層、基準層
22 トンネル障壁、第1の加熱要素
23 第2の強磁性層、記憶層
24 反強磁性記憶層
25 第1の加熱要素
26 第2の加熱要素
3 選択トランジスタ
30 熱障壁
31 加熱電流
4 電流線
41 磁場電流
42 磁場
f 係数
RAMTJ トンネル障壁の抵抗面積積
RAHE 第2及び第3の加熱要素の抵抗面積積
TMR 磁気トンネル接合の磁気抵抗
Claims (10)
- 熱アシストスイッチング書き込み操作に適した磁気メモリ素子であって、磁気トンネル接合の一端と電気的に連絡した電流線を備え、
前記磁気トンネル接合が、固定磁化を有する第1の強磁性層と、所定の高温しきい値で自由に整列させることができる磁化を有する第2の強磁性層と、前記第1の強磁性層と前記第2の強磁性層の間に提供されたトンネル障壁とを備え、
前記電流線が、前記書き込み操作中に前記磁気トンネル接合を通して加熱電流を流すように適合された磁気メモリ素子において、
前記磁気トンネル接合が、前記加熱電流が前記磁気トンネル接合を通して流されるときに熱を発生するように適合された少なくとも1つの加熱要素と、前記少なくとも1つの加熱要素と直列の熱障壁とをさらに備え、
前記熱障壁が、前記磁気トンネル接合内部で前記少なくとも1つの加熱要素によって発生する熱を閉じ込めるように適合されることを特徴とする磁気メモリ素子。 - 前記第2の強磁性層が、所定の低温しきい値では反強磁性層と交換ピン止めされ、前記所定の高温しきい値では自由に整列させることができる磁化を有する請求項1に記載の磁気メモリ素子。
- 前記少なくとも1つの加熱要素は、前記第1の強磁性層と前記第2の強磁性層の少なくとも一方が前記トンネル障壁と前記少なくとも1つの加熱要素の間にあるようなものである請求項1に記載の磁気メモリ素子。
- 前記少なくとも1つの加熱要素が、MgO又はCoSiNからなる請求項1に記載の磁気メモリ素子。
- 前記少なくとも1つの加熱要素が、前記トンネル障壁の抵抗面積積の0〜1.5倍の抵抗面積積を有する請求項1に記載の磁気メモリ素子。
- 前記熱障壁が、前記反強磁性記憶層及び基準層の表面と接触する表面と反対側の前記少なくとも1つの加熱要素の表面と接触する請求項1に記載の磁気メモリ素子。
- 前記少なくとも1つの加熱要素が、第1の加熱要素及び第2の加熱要素を備える請求項1に記載の磁気メモリ素子。
- 前記第1の加熱要素は、前記第2の強磁性層が前記トンネル障壁と前記第1の加熱要素の間にあるようなものであり、前記第2の加熱要素は、前記第1の強磁性層が前記トンネル障壁と前記第2の加熱要素の間にあるようなものである請求項7に記載の磁気メモリ素子。
- 前記熱障壁の導電率が、前記トンネル障壁の導電率の約10倍である請求項1に記載の磁気メモリ素子。
- 複数の磁気メモリ素子を備える磁気メモリデバイスにおいて、
各磁気メモリ素子が、固定磁化を有する第1の強磁性層と、高温しきい値で自由に整列させることができる磁化を有する第2の強磁性層と、前記第1の強磁性層と前記第2の強磁性層の間に提供されたトンネル障壁と、少なくとも1つの加熱要素と、前記少なくとも1つの加熱要素と直列の熱障壁とを備える磁気トンネル接合を備え、前記磁気メモリデバイスが、磁気トンネル接合の一端と電気的に連絡した電流線をさらに備え、前記少なくとも1つの加熱要素が、加熱電流が電流線を介して前記磁気トンネル接合内に流されるときに熱を発生するように適合され、前記熱障壁が、前記磁気トンネル接合内部で前記少なくとも1つの加熱要素によって発生した熱を閉じ込めるように適合された磁気メモリデバイス。
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EP2672487B1 (en) | 2012-06-08 | 2015-08-05 | Crocus Technology S.A. | Method for writing to a Random Access Memory (MRAM) Cell with improved MRAM Cell Lifespan |
FR2993387B1 (fr) * | 2012-07-11 | 2014-08-08 | Commissariat Energie Atomique | Dispositif magnetique a ecriture assistee thermiquement |
US8767448B2 (en) | 2012-11-05 | 2014-07-01 | International Business Machines Corporation | Magnetoresistive random access memory |
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US20150069548A1 (en) * | 2013-09-09 | 2015-03-12 | Masahiko Nakayama | Magnetoresistive element |
US9214625B2 (en) | 2014-03-18 | 2015-12-15 | International Business Machines Corporation | Thermally assisted MRAM with increased breakdown voltage using a double tunnel barrier |
US9515251B2 (en) * | 2014-04-09 | 2016-12-06 | International Business Machines Corporation | Structure for thermally assisted MRAM |
US9384811B2 (en) | 2014-04-10 | 2016-07-05 | Samsung Electronics Co., Ltd. | Method and system for providing a thermally assisted spin transfer torque magnetic device including smart thermal barriers |
US9576633B2 (en) | 2015-01-05 | 2017-02-21 | Samsung Electronics Co., Ltd. | Method and system for programming magnetic junctions utilizing high frequency magnetic oscillations |
US10672420B2 (en) * | 2015-03-05 | 2020-06-02 | Sony Corporation | Storage device, storage apparatus, magnetic head, and electronic apparatus |
US9324937B1 (en) | 2015-03-24 | 2016-04-26 | International Business Machines Corporation | Thermally assisted MRAM including magnetic tunnel junction and vacuum cavity |
US9825217B1 (en) * | 2016-05-18 | 2017-11-21 | Samsung Electronics Co., Ltd. | Magnetic memory device having cobalt-iron-beryllium magnetic layers |
GB2576174B (en) * | 2018-08-07 | 2021-06-16 | Ip2Ipo Innovations Ltd | Memory |
CN109585644A (zh) * | 2018-11-09 | 2019-04-05 | 中国科学院微电子研究所 | 自旋轨道转矩磁阻式随机存储器及写入方法、装置 |
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