FR2892871B1 - Oscillateur radio frequence a courant elelctrique polarise en spin - Google Patents

Oscillateur radio frequence a courant elelctrique polarise en spin

Info

Publication number
FR2892871B1
FR2892871B1 FR0553321A FR0553321A FR2892871B1 FR 2892871 B1 FR2892871 B1 FR 2892871B1 FR 0553321 A FR0553321 A FR 0553321A FR 0553321 A FR0553321 A FR 0553321A FR 2892871 B1 FR2892871 B1 FR 2892871B1
Authority
FR
France
Prior art keywords
elelectic
current frequency
frequency radio
magnetic
radio oscillator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0553321A
Other languages
English (en)
Other versions
FR2892871A1 (fr
Inventor
Bernard Dieny
Renner Alina Maria Deac
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR0553321A priority Critical patent/FR2892871B1/fr
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to AT06832165T priority patent/ATE428217T1/de
Priority to PCT/IB2006/054692 priority patent/WO2007052240A2/fr
Priority to BRPI0618122-8A priority patent/BRPI0618122A2/pt
Priority to CN2006800409708A priority patent/CN101300735B/zh
Priority to DE602006006207T priority patent/DE602006006207D1/de
Priority to EP06832165A priority patent/EP1943727B1/fr
Priority to JP2008538491A priority patent/JP5051726B2/ja
Publication of FR2892871A1 publication Critical patent/FR2892871A1/fr
Application granted granted Critical
Publication of FR2892871B1 publication Critical patent/FR2892871B1/fr
Priority to US12/107,954 priority patent/US8227099B2/en
Priority to HK08114110.8A priority patent/HK1120937A1/xx
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B15/00—Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects
    • H03B15/006—Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects using spin transfer effects or giant magnetoresistance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1107—Magnetoresistive
    • Y10T428/1121—Multilayer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Power Engineering (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Heads (AREA)
  • Inverter Devices (AREA)
  • Transmitters (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Nitrogen And Oxygen As The Only Ring Hetero Atoms (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
FR0553321A 2005-11-02 2005-11-02 Oscillateur radio frequence a courant elelctrique polarise en spin Expired - Fee Related FR2892871B1 (fr)

Priority Applications (10)

Application Number Priority Date Filing Date Title
FR0553321A FR2892871B1 (fr) 2005-11-02 2005-11-02 Oscillateur radio frequence a courant elelctrique polarise en spin
JP2008538491A JP5051726B2 (ja) 2005-11-02 2006-10-31 スピン偏極電流を利用する無線周波数発振器
BRPI0618122-8A BRPI0618122A2 (pt) 2005-11-02 2006-10-31 oscilador de radiofrequência
CN2006800409708A CN101300735B (zh) 2005-11-02 2006-10-31 具有自旋极化电流的射频振荡器
DE602006006207T DE602006006207D1 (de) 2005-11-02 2006-10-31 Hochfrequenzoszillator mit spin-polarisiertem elektrischen strom
EP06832165A EP1943727B1 (fr) 2005-11-02 2006-10-31 Oscillateur rf a courant electrique a polarisation des spin
AT06832165T ATE428217T1 (de) 2005-11-02 2006-10-31 Hochfrequenzoszillator mit spin-polarisiertem elektrischen strom
PCT/IB2006/054692 WO2007052240A2 (fr) 2005-11-02 2006-10-31 Oscillateur rf a courant electrique a polarisation des spin
US12/107,954 US8227099B2 (en) 2005-11-02 2008-04-23 Radio-frequency oscillator with spin-polarised current
HK08114110.8A HK1120937A1 (en) 2005-11-02 2008-12-30 Radio-frequency oscillator with spin-polarised electric current

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0553321A FR2892871B1 (fr) 2005-11-02 2005-11-02 Oscillateur radio frequence a courant elelctrique polarise en spin

Publications (2)

Publication Number Publication Date
FR2892871A1 FR2892871A1 (fr) 2007-05-04
FR2892871B1 true FR2892871B1 (fr) 2007-11-23

Family

ID=37036883

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0553321A Expired - Fee Related FR2892871B1 (fr) 2005-11-02 2005-11-02 Oscillateur radio frequence a courant elelctrique polarise en spin

Country Status (10)

Country Link
US (1) US8227099B2 (fr)
EP (1) EP1943727B1 (fr)
JP (1) JP5051726B2 (fr)
CN (1) CN101300735B (fr)
AT (1) ATE428217T1 (fr)
BR (1) BRPI0618122A2 (fr)
DE (1) DE602006006207D1 (fr)
FR (1) FR2892871B1 (fr)
HK (1) HK1120937A1 (fr)
WO (1) WO2007052240A2 (fr)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2904724B1 (fr) * 2006-08-03 2011-03-04 Commissariat Energie Atomique Dispositif magnetique en couches minces a forte polarisation en spin perpendiculaire au plan des couches, jonction tunnel magnetique et vanne de spin mettant en oeuvre un tel dispositif
JP5036585B2 (ja) * 2008-02-13 2012-09-26 株式会社東芝 磁性発振素子、この磁性発振素子を有する磁気ヘッド、および磁気記録再生装置
FR2929759B1 (fr) * 2008-04-03 2010-04-16 Commissariat Energie Atomique Dispositif magnetique integrant un empilement magnetoresistif
FR2944384B1 (fr) * 2009-04-09 2012-01-20 Commissariat Energie Atomique Oscillateur radiofrequence a vanne de spin ou a jonction tunnel
US20100308923A1 (en) * 2009-06-04 2010-12-09 Seagate Technology Llc Magnetic voltage controlled oscillator
US8259409B2 (en) * 2009-06-25 2012-09-04 Hitachi Global Storage Technologies Netherlands B.V. Spin torque oscillator sensor
US8432644B2 (en) * 2009-06-25 2013-04-30 HGST Netherlands B.V. Spin torque oscillator sensor enhanced by magnetic anisotropy
JP4551973B1 (ja) * 2009-09-02 2010-09-29 キヤノンアネルバ株式会社 周波数変換装置
US20110058408A1 (en) * 2009-09-07 2011-03-10 Agency For Science, Technology And Research Memory cell arrangements; memory cell reader; method for determining a memory cell storage state
KR101616046B1 (ko) * 2009-10-05 2016-04-27 삼성전자주식회사 발진기 및 그 동작방법
FR2952486B1 (fr) 2009-11-06 2012-01-06 Commissariat Energie Atomique Oscillateur radiofrequence
FR2957209B1 (fr) 2010-03-03 2012-04-13 Commissariat Energie Atomique Oscillateur radiofrequence et procede de generation d'un signal oscillant
FR2957210B1 (fr) 2010-03-03 2012-04-13 Commissariat Energie Atomique Oscillateur radiofrequence et procede de generation d'un signal oscillant
US8581672B2 (en) * 2010-05-14 2013-11-12 Nokia Corporation Frequency synthesis
KR101676809B1 (ko) 2010-08-13 2016-11-16 삼성전자주식회사 발진기 및 그 동작방법
KR101676808B1 (ko) 2010-08-25 2016-11-17 삼성전자 주식회사 발진기 및 그 동작방법
KR101701979B1 (ko) 2010-09-02 2017-02-03 삼성전자 주식회사 발진기 및 그 동작방법
WO2012033571A1 (fr) * 2010-09-09 2012-03-15 New York University Nano-oscillateurs à couple de spin agrégés
KR101740485B1 (ko) 2010-09-16 2017-05-29 삼성전자 주식회사 발진기와 그 제조 및 동작방법
US8421440B2 (en) * 2010-10-25 2013-04-16 Nokia Corporation Apparatus for spectrum sensing and associated methods
KR101777264B1 (ko) 2010-11-09 2017-09-12 삼성전자 주식회사 발진기 및 상기 발진기의 동작 방법
US8525602B2 (en) * 2011-03-23 2013-09-03 Honeywell International Inc. Magnetic device with weakly exchange coupled antiferromagnetic layer
FR2974468B1 (fr) 2011-04-20 2013-05-31 Commissariat Energie Atomique Demodulateur d'un signal electrique module en frequence
FR2974418B1 (fr) 2011-04-20 2013-05-31 Commissariat Energie Atomique Detecteur d'oscillations
FR2974467B1 (fr) 2011-04-20 2013-05-31 Commissariat Energie Atomique Synthetiseur d'un signal oscillant
US8462461B2 (en) * 2011-07-05 2013-06-11 HGST Netherlands B.V. Spin-torque oscillator (STO) with magnetically damped free layer
US8908424B2 (en) * 2011-10-03 2014-12-09 The Hong Kong University Of Science And Technology Magnetization switching through magnonic spin transfer torque
US9343656B2 (en) 2012-03-02 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Magnetic tunnel junction (MTJ) structure in magnetic random access memory
US9355654B1 (en) * 2012-12-21 2016-05-31 Western Digital Technologies, Inc. Spin torque oscillator for microwave assisted magnetic recording with increased damping
KR20140135566A (ko) * 2013-05-16 2014-11-26 삼성전자주식회사 자기저항요소 및 이를 포함하는 메모리소자
FR3020497B1 (fr) 2014-04-28 2016-05-13 Commissariat Energie Atomique Aimant permanent comportant un empilement de couches ferromagnetiques et antiferromagnetiques
CN105223414B (zh) * 2014-06-18 2018-11-09 中国科学院苏州纳米技术与纳米仿生研究所 一种高灵敏度的微波探测器
CL2015003361A1 (es) * 2015-11-16 2017-08-04 Univ Santiago Chile Nanogenerador de campo magnético alterno que utiliza un nanohilo que permite ser aplicado en la generación corriente alterna a nivel de nanoescala; y método asociado
CN105448463B (zh) * 2016-01-14 2017-12-22 青岛大学 一种光学模铁磁共振增强的多层膜及其制备方法
FR3050068B1 (fr) 2016-04-06 2018-05-18 Commissariat A L'energie Atomique Et Aux Energies Alternatives Aimant permanent comprenant un empilement de n motifs
SE540812C2 (en) * 2016-11-02 2018-11-20 Johan Aakerman Ab Spin oscillator device and mutually synchronized spin oscillator device arrays
CN108242858A (zh) * 2016-12-27 2018-07-03 中国科学院苏州纳米技术与纳米仿生研究所 一种基于电子自旋属性的新型射频微波能量采集装置
FR3073661B1 (fr) 2017-11-10 2019-11-22 Commissariat A L'energie Atomique Et Aux Energies Alternatives Aimant permanent comprenant une couche antiferromagnetique et une couche ferromagnetique
CN109256656B (zh) * 2018-10-19 2020-04-24 山东大学 自旋矩纳米振荡器及基于该振荡器的太赫兹信号发生器
CN109411993A (zh) * 2018-12-28 2019-03-01 中国工程物理研究院电子工程研究所 一种基于交换偏置磁场的太赫兹波发生器
CN114730570A (zh) * 2020-05-29 2022-07-08 西部数据技术公司 具有反铁磁耦合辅助层的自旋扭矩振荡器及其操作方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5390061A (en) * 1990-06-08 1995-02-14 Hitachi, Ltd. Multilayer magnetoresistance effect-type magnetic head
US5786900A (en) 1994-03-23 1998-07-28 Fuji Photo Film Co., Ltd. Image recording device for recording multicolor images with dot pitch pattern randomly arranged only in the sub-scanning direction
US5695864A (en) * 1995-09-28 1997-12-09 International Business Machines Corporation Electronic device using magnetic components
JP3995072B2 (ja) * 2000-11-16 2007-10-24 富士通株式会社 Ｃｐｐ構造スピンバルブヘッド
FR2817999B1 (fr) * 2000-12-07 2003-01-10 Commissariat Energie Atomique Dispositif magnetique a polarisation de spin et a empilement(s) tri-couche(s) et memoire utilisant ce dispositif
US6958927B1 (en) * 2002-10-09 2005-10-25 Grandis Inc. Magnetic element utilizing spin-transfer and half-metals and an MRAM device using the magnetic element
US6963500B2 (en) * 2003-03-14 2005-11-08 Applied Spintronics Technology, Inc. Magnetic tunneling junction cell array with shared reference layer for MRAM applications
JP2005025831A (ja) * 2003-06-30 2005-01-27 Toshiba Corp 高周波発振素子、磁気情報記録用ヘッド及び磁気記憶装置
US6980469B2 (en) * 2003-08-19 2005-12-27 New York University High speed low power magnetic devices based on current induced spin-momentum transfer
EP1548702A1 (fr) * 2003-12-24 2005-06-29 Interuniversitair Microelektronica Centrum Vzw Procédé de réglage ultrarapide d'une cellule magnétique et dispositifs associés
US7471491B2 (en) * 2004-03-30 2008-12-30 Kabushiki Kaisha Toshiba Magnetic sensor having a frequency filter coupled to an output of a magnetoresistance element
JP4050245B2 (ja) * 2004-03-30 2008-02-20 株式会社東芝 磁気記録ヘッド及び磁気記憶装置
US7241631B2 (en) * 2004-12-29 2007-07-10 Grandis, Inc. MTJ elements with high spin polarization layers configured for spin-transfer switching and spintronics devices using the magnetic elements
JP4677589B2 (ja) * 2005-03-18 2011-04-27 独立行政法人科学技術振興機構 伝送回路一体型マイクロ波発生素子並びにマイクロ波検出方法、マイクロ波検出回路、マイクロ波検出素子及び伝送回路一体型マイクロ波検出素子
US7558028B2 (en) * 2005-11-16 2009-07-07 Hitachi Global Storage Technologies Netherlands B.V. Magnetic head with improved CPP sensor using Heusler alloys
US7616412B2 (en) * 2006-07-21 2009-11-10 Carnegie Melon University Perpendicular spin-torque-driven magnetic oscillator
US7750421B2 (en) * 2007-07-23 2010-07-06 Magic Technologies, Inc. High performance MTJ element for STT-RAM and method for making the same

Also Published As

Publication number Publication date
FR2892871A1 (fr) 2007-05-04
JP5051726B2 (ja) 2012-10-17
DE602006006207D1 (de) 2009-05-20
WO2007052240A2 (fr) 2007-05-10
CN101300735A (zh) 2008-11-05
EP1943727B1 (fr) 2009-04-08
US20080241597A1 (en) 2008-10-02
CN101300735B (zh) 2011-11-09
JP2009515406A (ja) 2009-04-09
BRPI0618122A2 (pt) 2011-08-16
US8227099B2 (en) 2012-07-24
EP1943727A2 (fr) 2008-07-16
WO2007052240A3 (fr) 2007-08-02
HK1120937A1 (en) 2009-04-09
ATE428217T1 (de) 2009-04-15

Similar Documents

Publication Publication Date Title
FR2892871B1 (fr) Oscillateur radio frequence a courant elelctrique polarise en spin
Zhu et al. Voltage-induced ferromagnetic resonance in magnetic tunnel junctions
JP4743113B2 (ja) 発振器
WO2008050045A3 (fr) Dispositif magnetique a aimantation perpendiculaire et a couche intercalaire compensatrice d'interactions
WO2005064783A3 (fr) Dispositif de couple spin accordable completement integre destine a generer un signal oscillant, et procede d'accord dudit appareil
WO2013007797A9 (fr) Oscillateur spintronique et utilisation de celui-ci dans des dispositifs radiofréquence
JP2009194070A (ja) 磁性発振素子、この磁性発振素子を有する磁気ヘッド、および磁気記録再生装置
DE602006020190D1 (de) Resonanzschaltkreis-abstimmsystem mit dynamischer impedanzanpassung
DE602005012092D1 (de) Verfahren und einrichtung zum speisen von planarantennen
CN101964440B (zh) 利用磁畴壁的振荡器及其操作方法
DE602006013482D1 (de) Omnidirektionale planarantenne und herstellungsverfahren dafür
WO2009034305A3 (fr) Capteur de pale de rotor
ATE514096T1 (de) Rauscharmer magnetfeldsensor
WO2009054182A1 (fr) Élément de vanne de spin et son procédé de fabrication
TW200711192A (en) Super-conducting device and axial gap type super-conducting motor
DE60139682D1 (de) Magnetische mehrschichtstruktur mit verbessertem magnetfeldbereich
Wang et al. Large multiple resonance of magnetoelectric effect in a multiferroic composite cylinder with an imperfect interface
Braganca et al. Coherent and incoherent spin torque oscillations in a nanopillar magnetic spin-valve
ATE479117T1 (de) Vorrichtung zur erkennung magnetischer materialien
Chen et al. Tunable characteristics of bending resonance frequency in magnetoelectric laminated composites
RU2006105373A (ru) Устройство намагничивания для средств неразрушающего контроля
Youssef et al. Triaxial Magnetic Flux Emanation in Response to Uniaxial Electric Field in Magnetoelectric Composite Cylinder Structure
FR2965654B1 (fr) Dispositif magnetique a ecriture assistee thermiquement
Huang et al. Multipeak self-biased magnetoelectric coupling characteristics in four-phase Metglas/Terfenol-D/Be-bronze/PMN-PT structure
ATE555428T1 (de) Kleiner elektromechanischer signalwandler, insbesondere uhrgenerator

Legal Events

Date Code Title Description
TQ Partial transmission of property
ST Notification of lapse

Effective date: 20110801