ATE514096T1 - Rauscharmer magnetfeldsensor - Google Patents

Rauscharmer magnetfeldsensor

Info

Publication number
ATE514096T1
ATE514096T1 AT08774779T AT08774779T ATE514096T1 AT E514096 T1 ATE514096 T1 AT E514096T1 AT 08774779 T AT08774779 T AT 08774779T AT 08774779 T AT08774779 T AT 08774779T AT E514096 T1 ATE514096 T1 AT E514096T1
Authority
AT
Austria
Prior art keywords
magnetic layer
magnetization
layer
magnetic field
pinned
Prior art date
Application number
AT08774779T
Other languages
English (en)
Inventor
Bernard Dieny
Claire Baraduc
Sebastien Petit
Christophe Thirion
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Application granted granted Critical
Publication of ATE514096T1 publication Critical patent/ATE514096T1/de

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/398—Specially shaped layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
  • Magnetic Heads (AREA)
  • Transmission And Conversion Of Sensor Element Output (AREA)
AT08774779T 2007-07-10 2008-07-04 Rauscharmer magnetfeldsensor ATE514096T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0756394A FR2918761B1 (fr) 2007-07-10 2007-07-10 Capteur de champ magnetique a faible bruit.
PCT/EP2008/058701 WO2009007323A1 (fr) 2007-07-10 2008-07-04 Capteur de champ magnétique à faible bruit

Publications (1)

Publication Number Publication Date
ATE514096T1 true ATE514096T1 (de) 2011-07-15

Family

ID=39295946

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08774779T ATE514096T1 (de) 2007-07-10 2008-07-04 Rauscharmer magnetfeldsensor

Country Status (7)

Country Link
US (1) US8068316B2 (de)
EP (1) EP2167984B1 (de)
JP (1) JP2010533366A (de)
CN (1) CN101688904A (de)
AT (1) ATE514096T1 (de)
FR (1) FR2918761B1 (de)
WO (1) WO2009007323A1 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2918762B1 (fr) * 2007-07-10 2010-03-19 Commissariat Energie Atomique Capteur de champ magnetique a faible bruit utilisant un transfert de spin lateral.
CN104995525A (zh) * 2012-12-17 2015-10-21 地质研究院及核科学有限公司 宽动态范围磁强计
US9529060B2 (en) 2014-01-09 2016-12-27 Allegro Microsystems, Llc Magnetoresistance element with improved response to magnetic fields
WO2016196157A1 (en) 2015-06-05 2016-12-08 Allegro Microsystems, Llc Spin valve magnetoresistance element with improved response to magnetic fields
US11022661B2 (en) 2017-05-19 2021-06-01 Allegro Microsystems, Llc Magnetoresistance element with increased operational range
US10620279B2 (en) 2017-05-19 2020-04-14 Allegro Microsystems, Llc Magnetoresistance element with increased operational range
JP2019033159A (ja) * 2017-08-07 2019-02-28 Tdk株式会社 磁気抵抗効果デバイス及び高周波デバイス
US10876839B2 (en) 2018-09-11 2020-12-29 Honeywell International Inc. Spintronic gyroscopic sensor device
US10802087B2 (en) 2018-09-11 2020-10-13 Honeywell International Inc. Spintronic accelerometer
US10871529B2 (en) 2018-09-11 2020-12-22 Honeywell International Inc. Spintronic mechanical shock and vibration sensor device
US10615887B1 (en) * 2018-09-24 2020-04-07 Seagate Technology Llc Mitigation of noise generated by random excitation of asymmetric oscillation modes
CN112305468B (zh) * 2019-07-29 2023-09-26 甘肃省科学院传感技术研究所 一种可用于巨磁阻传感器退火的方法与结构
DE102019126320B4 (de) * 2019-09-30 2024-03-28 Infineon Technologies Ag Magnetoresistiver Sensor und Fertigungsverfahren für einen magnetoresistiven Sensor
FR3113519B1 (fr) * 2020-08-24 2022-09-02 Commissariat Energie Atomique Procédé de mesure d’un champ magnétique extérieur par au moins un point mémoire magnétique
US11719771B1 (en) 2022-06-02 2023-08-08 Allegro Microsystems, Llc Magnetoresistive sensor having seed layer hysteresis suppression

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2725977B2 (ja) * 1992-08-28 1998-03-11 インターナショナル・ビジネス・マシーンズ・コーポレイション 磁気抵抗センサ及びその製造方法、磁気記憶システム
KR20010085831A (ko) * 1998-09-28 2001-09-07 추후 쿼드-층 ｇｍｒ 샌드위치
FR2814592B1 (fr) 2000-09-26 2003-01-03 Commissariat Energie Atomique Dispositif a vanne de spin a reflexion electronique speculaire dependant du spin
FR2817998B1 (fr) 2000-12-07 2003-01-10 Commissariat Energie Atomique Dispositif magnetique a polarisation de spin et a rotation d'aimantation, memoire et procede d'ecriture utilisant ce dispositif
FR2817999B1 (fr) 2000-12-07 2003-01-10 Commissariat Energie Atomique Dispositif magnetique a polarisation de spin et a empilement(s) tri-couche(s) et memoire utilisant ce dispositif
US6888742B1 (en) * 2002-08-28 2005-05-03 Grandis, Inc. Off-axis pinned layer magnetic element utilizing spin transfer and an MRAM device using the magnetic element
US7245462B2 (en) * 2003-08-21 2007-07-17 Grandis, Inc. Magnetoresistive element having reduced spin transfer induced noise
US7098494B2 (en) * 2004-06-16 2006-08-29 Grandis, Inc. Re-configurable logic elements using heat assisted magnetic tunneling elements
JP2006005185A (ja) * 2004-06-18 2006-01-05 Alps Electric Co Ltd 磁気検出素子
JP4674498B2 (ja) * 2004-09-03 2011-04-20 Ｔｄｋ株式会社 磁気検出素子
JP2006253451A (ja) * 2005-03-11 2006-09-21 Alps Electric Co Ltd 磁気検出素子
US8130474B2 (en) * 2005-07-18 2012-03-06 Hitachi Global Storage Technologies Netherlands B.V. CPP-TMR sensor with non-orthogonal free and reference layer magnetization orientation
JP2007110011A (ja) * 2005-10-17 2007-04-26 Tdk Corp 磁気抵抗効果素子、薄膜磁気ヘッド、薄膜磁気ヘッドのウエハ、ヘッドジンバルアセンブリ、ハードディスク装置、磁気メモリ素子、および磁気センサアセンブリ
JP4786331B2 (ja) * 2005-12-21 2011-10-05 株式会社東芝 磁気抵抗効果素子の製造方法
US20070153432A1 (en) * 2005-12-29 2007-07-05 Tdk Corporation Magnetic head
JP2008066640A (ja) * 2006-09-11 2008-03-21 Alps Electric Co Ltd トンネル型磁気検出素子およびその製造方法
JP2009016401A (ja) * 2007-06-29 2009-01-22 Toshiba Corp 磁気抵抗効果素子、垂直通電型磁気ヘッド、および磁気ディスク装置

Also Published As

Publication number Publication date
FR2918761B1 (fr) 2009-11-06
US8068316B2 (en) 2011-11-29
JP2010533366A (ja) 2010-10-21
WO2009007323A1 (fr) 2009-01-15
FR2918761A1 (fr) 2009-01-16
US20090015972A1 (en) 2009-01-15
EP2167984B1 (de) 2011-06-22
EP2167984A1 (de) 2010-03-31
CN101688904A (zh) 2010-03-31

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