IN2015MN00034A - - Google Patents

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Publication number
IN2015MN00034A
IN2015MN00034A IN34MUN2015A IN2015MN00034A IN 2015MN00034 A IN2015MN00034 A IN 2015MN00034A IN 34MUN2015 A IN34MUN2015 A IN 34MUN2015A IN 2015MN00034 A IN2015MN00034 A IN 2015MN00034A
Authority
IN
India
Prior art keywords
tmr
buffer layer
enhancement buffer
layers
amorphous alloy
Prior art date
Application number
Other languages
English (en)
Inventor
Kangho Lee
Wei Chuan Chen
Seung H Kang
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of IN2015MN00034A publication Critical patent/IN2015MN00034A/en

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
IN34MUN2015 2012-07-27 2013-07-26 IN2015MN00034A (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261676487P 2012-07-27 2012-07-27
US13/770,526 US9214624B2 (en) 2012-07-27 2013-02-19 Amorphous spacerlattice spacer for perpendicular MTJs
PCT/US2013/052383 WO2014018920A1 (en) 2012-07-27 2013-07-26 Amorphous alloy spacer for perpendicular mtjs

Publications (1)

Publication Number Publication Date
IN2015MN00034A true IN2015MN00034A (de) 2015-10-16

Family

ID=49994074

Family Applications (1)

Application Number Title Priority Date Filing Date
IN34MUN2015 IN2015MN00034A (de) 2012-07-27 2013-07-26

Country Status (5)

Country Link
US (2) US9214624B2 (de)
EP (1) EP2878017B1 (de)
CN (1) CN104488102B (de)
IN (1) IN2015MN00034A (de)
WO (1) WO2014018920A1 (de)

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Also Published As

Publication number Publication date
US20160111634A1 (en) 2016-04-21
EP2878017B1 (de) 2016-08-24
EP2878017A1 (de) 2015-06-03
CN104488102B (zh) 2017-05-03
US20140027869A1 (en) 2014-01-30
US9214624B2 (en) 2015-12-15
US9548445B2 (en) 2017-01-17
CN104488102A (zh) 2015-04-01
WO2014018920A1 (en) 2014-01-30

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