WO2008123023A1 - スピン緩和変動方法、スピン流検出方法、及び、スピン緩和を利用したスピントロニクスデバイス - Google Patents

スピン緩和変動方法、スピン流検出方法、及び、スピン緩和を利用したスピントロニクスデバイス Download PDF

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Publication number
WO2008123023A1
WO2008123023A1 PCT/JP2008/054733 JP2008054733W WO2008123023A1 WO 2008123023 A1 WO2008123023 A1 WO 2008123023A1 JP 2008054733 W JP2008054733 W JP 2008054733W WO 2008123023 A1 WO2008123023 A1 WO 2008123023A1
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Prior art keywords
spin
spin relaxation
relaxation
current detection
device utilizing
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PCT/JP2008/054733
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English (en)
French (fr)
Inventor
Kazuya Ando
Kazuya Harii
Kohei Sasage
Eiji Saitoh
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Keio University
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Application filed by Keio University filed Critical Keio University
Priority to JP2009509018A priority Critical patent/JP5397902B2/ja
Priority to US12/531,594 priority patent/US8564293B2/en
Publication of WO2008123023A1 publication Critical patent/WO2008123023A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66984—Devices using spin polarized carriers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/18—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using Hall-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Abstract

　スピン緩和変動方法、スピン流検出方法、及び、スピン緩和を利用したスピントロニクスデバイスに関し、スピン流の注入によりスピン緩和を変動させる。 　特定のスピン状態にある部材１にスピン流４を注入してスピン緩和時間を制御する。
PCT/JP2008/054733 2007-03-16 2008-03-14 スピン緩和変動方法、スピン流検出方法、及び、スピン緩和を利用したスピントロニクスデバイス WO2008123023A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009509018A JP5397902B2 (ja) 2007-03-16 2008-03-14 スピン緩和変動方法、スピン流検出方法、及び、スピン緩和を利用したスピントロニクスデバイス
US12/531,594 US8564293B2 (en) 2007-03-16 2008-03-14 Method for changing spin relaxation, method for detecting spin current and spintronics device using spin relaxation

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007068371 2007-03-16
JP2007-068371 2007-03-16
JP2007-283363 2007-10-31
JP2007283363 2007-10-31

Publications (1)

Publication Number Publication Date
WO2008123023A1 true WO2008123023A1 (ja) 2008-10-16

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PCT/JP2008/054733 WO2008123023A1 (ja) 2007-03-16 2008-03-14 スピン緩和変動方法、スピン流検出方法、及び、スピン緩和を利用したスピントロニクスデバイス

Country Status (3)

Country Link
US (1) US8564293B2 (ja)
JP (1) JP5397902B2 (ja)
WO (1) WO2008123023A1 (ja)

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JP5565818B2 (ja) * 2009-03-25 2014-08-06 国立大学法人東北大学 磁気センサ及び磁気記憶装置
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JP2015515750A (ja) * 2012-03-29 2015-05-28 インテル コーポレイション 磁気状態素子及び回路
JP2016517165A (ja) * 2013-03-14 2016-06-09 インテル・コーポレーション スピンホールｍｔｊデバイスを有するクロスポイントアレイのｍｒａｍ
WO2018052062A1 (ja) * 2016-09-14 2018-03-22 Tdk株式会社 磁気抵抗効果デバイスおよび磁気抵抗効果モジュール
US10770214B2 (en) 2018-03-16 2020-09-08 Tdk Corporation Spin-orbit-torque magnetization rotational element, spin-orbit-torque magnetoresistance effect element, and magnetic memory
JP2022510249A (ja) * 2018-11-30 2022-01-26 世宗大学校産学協力団 異常ホール効果を利用する磁気センサ、ホールセンサおよびホールセンサの製造方法

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CN104704564B (zh) 2012-08-06 2017-05-31 康奈尔大学 磁性纳米结构中基于自旋霍尔扭矩效应的电栅控式三端子电路及装置
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CN113270542B (zh) * 2021-05-13 2023-03-21 上海科技大学 一种基于iii-v族窄禁带半导体异质结构的自旋信号探测器
CN114005933B (zh) * 2021-10-21 2024-08-20 华中科技大学 低阈值电压漂移的双向阈值切换选通管单元制备方法以及产品

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JP5565818B2 (ja) * 2009-03-25 2014-08-06 国立大学法人東北大学 磁気センサ及び磁気記憶装置
JP2010245419A (ja) * 2009-04-09 2010-10-28 Keio Gijuku マイクロ波発振素子及びマイクロ波発振装置
KR101664199B1 (ko) 2009-07-09 2016-10-10 고쿠리쓰다이가쿠호진 규슈다이가쿠 자화 반전 장치, 기억 소자, 및 자계 발생 장치
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US10770214B2 (en) 2018-03-16 2020-09-08 Tdk Corporation Spin-orbit-torque magnetization rotational element, spin-orbit-torque magnetoresistance effect element, and magnetic memory
JP2022510249A (ja) * 2018-11-30 2022-01-26 世宗大学校産学協力団 異常ホール効果を利用する磁気センサ、ホールセンサおよびホールセンサの製造方法
JP7207671B2 (ja) 2018-11-30 2023-01-18 世宗大学校産学協力団 異常ホール効果を利用する磁気センサ、ホールセンサおよびホールセンサの製造方法

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JP5397902B2 (ja) 2014-01-22
US8564293B2 (en) 2013-10-22
US20100097063A1 (en) 2010-04-22
JPWO2008123023A1 (ja) 2010-07-15

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