JP4817266B2 - 成膜装置および成膜方法 - Google Patents
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45519—Inert gas curtains
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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Description
前記チャンバー内で複数の基板を平面的に円周状に配置された状態で支持する基板支持部材と、
前記チャンバー内に設けられ、前記基板支持部材の上方に対向させた状態で第1の処理ガスを吐出する複数の吐出口を有する第1の処理ガス吐出部と、
前記チャンバー内の前記第1の処理ガス吐出部とは異なる位置に設けられ、前記基板支持部材の上方に対向させた状態で第2の処理ガスを吐出する複数の吐出口を有する第2の処理ガス吐出部と、
前記第1の処理ガス吐出部と前記第2の処理ガス吐出部との間に位置し、パージガスを吐出するパージガス吐出部と、
前記基板支持部材を回転させる回転機構と、
前記基板を加熱する加熱手段と、
前記チャンバーの底部に設けられた排気口と
を具備し、
前記第1の処理ガス吐出部と前記第2の処理ガス吐出部とは、前記基板支持部材の基板配置領域の上方に交互に基板の移動軌跡に沿って円周状に配置され、
前記パージガス吐出部は、前記基板支持部材の径方向に対応する長さが円周方向に対応する長さよりも長く形成され、パージガスを吐出する吐出口の下方に延びるように設けられた、吐出されたパージガスの流れが拡散することを防止するスカート部を有し、吐出された前記パージガスが前記スカート部によってエアカーテンとなり、このエアカーテンにより前記第1の処理ガスの雰囲気と前記第2の処理ガスの雰囲気とが分離され、前記パージガス吐出部の前記基板支持部材の径方向に対応する長さが、少なくとも前記基板配置領域に配置された基板の径方向の長さを覆う長さであり、前記パージガス吐出部の吐出口の高さ位置が、前記第1の処理ガス吐出部における吐出口の高さ位置および前記第2の処理ガス吐出部における吐出口の高さ位置よりも高く、
前記回転機構は、前記基板支持部材に支持された基板が前記第1の処理ガス吐出部および前記第2の処理ガス吐出部の直下を通過するように前記基板支持部材を回転させ、
前記回転機構により前記基板支持部材を回転させることにより、基板の上方の前記第1の処理ガス吐出部および前記第2の処理ガス吐出部から底部の前記排気口に向けた、パージガスで分離された状態の前記第1の処理ガスの流れおよび前記第2の処理ガスの流れの中に前記加熱手段により加熱された状態の基板を通過させ、基板上に、前記第1の処理ガスおよび前記第2の処理ガスを、互いに混合することなく交互に吸着させて、前記第1の処理ガスによる単原子層および前記第2の処理ガスによる単原子層とを交互に形成し、これらを熱的に反応させて化合物の膜を形成することを特徴とする成膜装置を提供する。
前記チャンバー内で複数の基板を平面的に円周状に配置された状態で支持する基板支持部材と、
前記チャンバー内に設けられ、前記基板支持部材の上方に対向させた状態で第1の処理ガスを吐出する複数の吐出口を有する第1の処理ガス吐出部と、
前記チャンバー内の前記第1の処理ガス吐出部とは異なる位置に設けられ、前記基板支持部材の上方に対向させた状態で第2の処理ガスを吐出する複数の吐出口を有する第2の処理ガス吐出部と、
前記第1の処理ガス吐出部と前記第2の処理ガス吐出部との間に位置し、パージガスを吐出するパージガス吐出部と、
前記基板支持部材を回転させる回転機構と、
前記基板を加熱する加熱手段と、
前記チャンバーの底部に設けられた排気口と
を具備し、
前記第1の処理ガス吐出部と前記第2の処理ガス吐出部とは、前記基板支持部材の基板配置領域の上方に交互に基板の移動軌跡に沿って円周状に配置され、
前記パージガス吐出部は、前記基板支持部材の径方向に対応する長さが円周方向に対応する長さよりも長く形成され、パージガスを吐出する吐出口の下方に延びるように設けられた、吐出されたパージガスの流れが拡散することを防止するスカート部を有し、
前記回転機構は、前記基板支持部材に支持された基板が前記第1の処理ガス吐出部および前記第2の処理ガス吐出部の直下を通過するように前記基板支持部材を回転させる成膜装置を用いて基板上に化合物膜を成膜する成膜方法であって、
前記パージガス吐出部を、その前記基板支持部材の径方向に対応する長さが、少なくとも前記基板配置領域に配置された基板の径方向の長さを覆う長さになるようにし、かつ、その吐出口の高さ位置が、前記第1の処理ガス吐出部における吐出口の高さ位置および前記第2の処理ガス吐出部における吐出口の高さ位置よりも高くなるようにし、
前記パージガス吐出部から吐出された前記パージガスを前記スカート部によってエアカーテンとし、このエアカーテンにより前記第1の処理ガスの雰囲気と前記第2の処理ガスの雰囲気とを分離し、基板の上方の前記第1の処理ガス吐出部および前記第2の処理ガス吐出部から底部の前記排気口に向けた、パージガスで分離された状態の前記第1の処理ガスおよび前記第2の処理ガスの流れを形成し、
前記回転機構により前記基板支持部材を回転させることにより、前記第1の処理ガスおよび前記第2の処理ガスの流れの中に前記加熱手段により加熱された状態の基板を通過させ、
前記加熱された基板上に、前記第1の処理ガスおよび前記第2の処理ガスを、互いに混合することなく交互に吸着させて、前記第1の処理ガスによる単原子層および前記第2の処理ガスによる単原子層とを交互に形成し、これらを熱的に反応させて化合物の膜を形成することを特徴とする成膜方法を提供する。
TiCl4ガス流量:1〜50sccm(0.001〜0.05L/min)、好ましくは5〜20sccm(0.005〜0.02L/min)
Arガス(キャリアガス)流量:10〜100sccm(0.01〜0.1L/min)、TiCl4ガスが低流量の場合にはキャリアガスは用いなくてもよい
NH3ガス流量:50〜1000sccm(0.05〜1L/min)、好ましくは50〜500sccm(0.05〜0.5L/min)
パージガス流量:100〜1000sccm(0.1〜1L/min)
チャンバー内圧力:100mTorr〜5Torr(13.3Pa〜665Pa)、好ましくは100mTorr〜1Torr(13.3Pa〜133Pa)
加熱温度:300〜700℃、好ましくは400〜600℃
ClF3ガス流量:100〜500sccm(0.1〜0.5L/min)、好ましくは200〜300sccm(0.2〜0.3L/min)
チャンバー内圧力:1〜10Torr(133〜1330Pa)、好ましくは1〜5Torr(133〜665Pa)
クリーニング温度:200〜500℃、好ましくは200〜300℃
11;チャンバー
12,12’;ウエハ支持部材
12a;ウエハ支持部
13;回転軸
14;モーター
16,16’;ヒーター
20,21;処理ガス吐出ノズル
22;パージガス吐出ノズル
30;ガス供給機構
25,70;排気口
26,71;排気管
28;排気装置
52;ウエハテーブル
53;モーター
60,61;シャワーヘッド
W;半導体ウエハ
Claims (11)
- 基板を収容するチャンバーと、
前記チャンバー内で複数の基板を平面的に円周状に配置された状態で支持する基板支持部材と、
前記チャンバー内に設けられ、前記基板支持部材の上方に対向させた状態で第1の処理ガスを吐出する複数の吐出口を有する第1の処理ガス吐出部と、
前記チャンバー内の前記第1の処理ガス吐出部とは異なる位置に設けられ、前記基板支持部材の上方に対向させた状態で第2の処理ガスを吐出する複数の吐出口を有する第2の処理ガス吐出部と、
前記第1の処理ガス吐出部と前記第2の処理ガス吐出部との間に位置し、パージガスを吐出するパージガス吐出部と、
前記基板支持部材を回転させる回転機構と、
前記基板を加熱する加熱手段と、
前記チャンバーの底部に設けられた排気口と
を具備し、
前記第1の処理ガス吐出部と前記第2の処理ガス吐出部とは、前記基板支持部材の基板配置領域の上方に交互に基板の移動軌跡に沿って円周状に配置され、
前記パージガス吐出部は、前記基板支持部材の径方向に対応する長さが円周方向に対応する長さよりも長く形成され、パージガスを吐出する吐出口の下方に延びるように設けられた、吐出されたパージガスの流れが拡散することを防止するスカート部を有し、吐出された前記パージガスが前記スカート部によってエアカーテンとなり、このエアカーテンにより前記第1の処理ガスの雰囲気と前記第2の処理ガスの雰囲気とが分離され、前記パージガス吐出部の前記基板支持部材の径方向に対応する長さが、少なくとも前記基板配置領域に配置された基板の径方向の長さを覆う長さであり、前記パージガス吐出部の吐出口の高さ位置が、前記第1の処理ガス吐出部における吐出口の高さ位置および前記第2の処理ガス吐出部における吐出口の高さ位置よりも高く、
前記回転機構は、前記基板支持部材に支持された基板が前記第1の処理ガス吐出部および前記第2の処理ガス吐出部の直下を通過するように前記基板支持部材を回転させ、
前記回転機構により前記基板支持部材を回転させることにより、基板の上方の前記第1の処理ガス吐出部および前記第2の処理ガス吐出部から底部の前記排気口に向けた、パージガスで分離された状態の前記第1の処理ガスの流れおよび前記第2の処理ガスの流れの中に前記加熱手段により加熱された状態の基板を通過させ、基板上に、前記第1の処理ガスおよび前記第2の処理ガスを、互いに混合することなく交互に吸着させて、前記第1の処理ガスによる単原子層および前記第2の処理ガスによる単原子層とを交互に形成し、これらを熱的に反応させて化合物の膜を形成することを特徴とする成膜装置。 - 前記第1の処理ガスは、Al、Zr、Ti、Ta、Si、WおよびRuのうちいずれか1種を含み、前記第2の処理ガスはNまたはOを含むことを特徴とする請求項1に記載の成膜装置。
- Al2O3、ZrO2、TiN、TaN、SiO2、SiN、SiON、SiOF、WN、WSiおよびRuO2のうちいずれか1種を成膜することを特徴とする請求項1または請求項2に記載の成膜装置。
- 前記回転機構は、前記第1の処理ガスおよび前記第2の処理ガスの吸着速度に応じてその回転数が可変であることを特徴とする請求項1から請求項3のいずれか1項に記載の成膜装置。
- 前記第1の処理ガス吐出部および前記第2の処理ガス吐出部は、クリーニングガスを吐出することを特徴とする請求項1から請求項4のいずれか1項に記載の成膜装置。
- 前記クリーニングガスはClF3であることを特徴とする請求項5に記載の成膜装置。
- 基板を収容するチャンバーと、
前記チャンバー内で複数の基板を平面的に円周状に配置された状態で支持する基板支持部材と、
前記チャンバー内に設けられ、前記基板支持部材の上方に対向させた状態で第1の処理ガスを吐出する複数の吐出口を有する第1の処理ガス吐出部と、
前記チャンバー内の前記第1の処理ガス吐出部とは異なる位置に設けられ、前記基板支持部材の上方に対向させた状態で第2の処理ガスを吐出する複数の吐出口を有する第2の処理ガス吐出部と、
前記第1の処理ガス吐出部と前記第2の処理ガス吐出部との間に位置し、パージガスを吐出するパージガス吐出部と、
前記基板支持部材を回転させる回転機構と、
前記基板を加熱する加熱手段と、
前記チャンバーの底部に設けられた排気口と
を具備し、
前記第1の処理ガス吐出部と前記第2の処理ガス吐出部とは、前記基板支持部材の基板配置領域の上方に交互に基板の移動軌跡に沿って円周状に配置され、
前記パージガス吐出部は、前記基板支持部材の径方向に対応する長さが円周方向に対応する長さよりも長く形成され、パージガスを吐出する吐出口の下方に延びるように設けられた、吐出されたパージガスの流れが拡散することを防止するスカート部を有し、
前記回転機構は、前記基板支持部材に支持された基板が前記第1の処理ガス吐出部および前記第2の処理ガス吐出部の直下を通過するように前記基板支持部材を回転させる成膜装置を用いて基板上に化合物膜を成膜する成膜方法であって、
前記パージガス吐出部を、その前記基板支持部材の径方向に対応する長さが、少なくとも前記基板配置領域に配置された基板の径方向の長さを覆う長さになるようにし、かつ、その吐出口の高さ位置が、前記第1の処理ガス吐出部における吐出口の高さ位置および前記第2の処理ガス吐出部における吐出口の高さ位置よりも高くなるようにし、
前記パージガス吐出部から吐出された前記パージガスを前記スカート部によってエアカーテンとし、このエアカーテンにより前記第1の処理ガスの雰囲気と前記第2の処理ガスの雰囲気とを分離し、基板の上方の前記第1の処理ガス吐出部および前記第2の処理ガス吐出部から底部の前記排気口に向けた、パージガスで分離された状態の前記第1の処理ガスおよび前記第2の処理ガスの流れを形成し、
前記回転機構により前記基板支持部材を回転させることにより、前記第1の処理ガスおよび前記第2の処理ガスの流れの中に前記加熱手段により加熱された状態の基板を通過させ、
前記加熱された基板上に、前記第1の処理ガスおよび前記第2の処理ガスを、互いに混合することなく交互に吸着させて、前記第1の処理ガスによる単原子層および前記第2の処理ガスによる単原子層とを交互に形成し、これらを熱的に反応させて化合物の膜を形成することを特徴とする成膜方法。 - 前記第1の処理ガスは、Al、Zr、Ti、Ta、Si、WおよびRuのうちいずれか1種を含み、前記第2の処理ガスはNまたはOを含むことを特徴とする請求項7に記載の成膜方法。
- Al2O3、ZrO2、TiN、TaN、SiO2、SiN、SiON、SiOF、WN、WSiおよびRuO2のうちいずれか1種を成膜することを特徴とする請求項7または請求項8に記載の成膜方法。
- 前記第1の処理ガス吐出部および前記第2の処理ガス吐出部からクリーニングガスを吐出し、チャンバー内をクリーニングすることを特徴とする請求項7から請求項9のいずれか1項に記載の成膜方法。
- 前記クリーニングガスはClF3であることを特徴とする請求項10に記載の成膜方法。
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Families Citing this family (459)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020195056A1 (en) * | 2000-05-12 | 2002-12-26 | Gurtej Sandhu | Versatile atomic layer deposition apparatus |
US6541353B1 (en) * | 2000-08-31 | 2003-04-01 | Micron Technology, Inc. | Atomic layer doping apparatus and method |
JP2002367990A (ja) * | 2001-06-04 | 2002-12-20 | Tokyo Electron Ltd | 半導体装置の製造方法 |
JP3886424B2 (ja) * | 2001-08-28 | 2007-02-28 | 鹿児島日本電気株式会社 | 基板処理装置及び方法 |
US6932871B2 (en) | 2002-04-16 | 2005-08-23 | Applied Materials, Inc. | Multi-station deposition apparatus and method |
US6869641B2 (en) * | 2002-07-03 | 2005-03-22 | Unaxis Balzers Ltd. | Method and apparatus for ALD on a rotary susceptor |
US7153542B2 (en) * | 2002-08-06 | 2006-12-26 | Tegal Corporation | Assembly line processing method |
US20040058293A1 (en) * | 2002-08-06 | 2004-03-25 | Tue Nguyen | Assembly line processing system |
KR100497748B1 (ko) * | 2002-09-17 | 2005-06-29 | 주식회사 무한 | 반도체소자 제조용 원자층 증착 장치 및 원자층 증착 방법 |
US6972055B2 (en) * | 2003-03-28 | 2005-12-06 | Finens Corporation | Continuous flow deposition system |
US6703296B1 (en) * | 2003-04-17 | 2004-03-09 | Macronix International Co. Ltd. | Method for forming metal salicide |
US20050011459A1 (en) * | 2003-07-15 | 2005-01-20 | Heng Liu | Chemical vapor deposition reactor |
US20050178336A1 (en) * | 2003-07-15 | 2005-08-18 | Heng Liu | Chemical vapor deposition reactor having multiple inlets |
US20050205210A1 (en) * | 2004-01-06 | 2005-09-22 | Devine Daniel J | Advanced multi-pressure workpiece processing |
US7892357B2 (en) * | 2004-01-12 | 2011-02-22 | Axcelis Technologies, Inc. | Gas distribution plate assembly for plasma reactors |
TWI334450B (en) * | 2004-03-12 | 2010-12-11 | Hitachi Int Electric Inc | Wafer treatment device and the manufacturing method of semiconductor device |
KR100574569B1 (ko) * | 2004-04-30 | 2006-05-03 | 주성엔지니어링(주) | 박막 증착방법 및 분리된 퍼지가스 분사구를 구비하는박막 증착장치 |
TWI249589B (en) * | 2004-07-16 | 2006-02-21 | Promos Technologies Inc | Method for improving atomic layer deposition process and the device thereof |
CN100411117C (zh) * | 2004-09-10 | 2008-08-13 | 茂德科技股份有限公司 | 改善原子层沉积工艺的方法及装置 |
US20060137609A1 (en) * | 2004-09-13 | 2006-06-29 | Puchacz Jerzy P | Multi-single wafer processing apparatus |
US20060073276A1 (en) * | 2004-10-04 | 2006-04-06 | Eric Antonissen | Multi-zone atomic layer deposition apparatus and method |
KR100558922B1 (ko) * | 2004-12-16 | 2006-03-10 | (주)퓨전에이드 | 박막 증착장치 및 방법 |
US20060195261A1 (en) * | 2005-02-10 | 2006-08-31 | Homeland Integrated Security Systems, Inc. | Electronic device for tracking and monitoring assets |
KR101447897B1 (ko) | 2005-03-21 | 2014-10-07 | 비로베이, 인코포레이티드 | 시스테인 단백질분해효소 억제제로서의 알파 케토아미드화합물 |
CN100358098C (zh) * | 2005-08-05 | 2007-12-26 | 中微半导体设备(上海)有限公司 | 半导体工艺件处理装置 |
US20070151842A1 (en) * | 2005-12-15 | 2007-07-05 | Fluens Corporation | Apparatus for reactive sputtering |
JP4760516B2 (ja) * | 2005-12-15 | 2011-08-31 | 東京エレクトロン株式会社 | 塗布装置及び塗布方法 |
WO2007106076A2 (en) * | 2006-03-03 | 2007-09-20 | Prasad Gadgil | Apparatus and method for large area multi-layer atomic layer chemical vapor processing of thin films |
US20070218702A1 (en) * | 2006-03-15 | 2007-09-20 | Asm Japan K.K. | Semiconductor-processing apparatus with rotating susceptor |
US20070234956A1 (en) * | 2006-04-05 | 2007-10-11 | Dalton Jeremie J | Method and apparatus for providing uniform gas delivery to a reactor |
US20080072821A1 (en) * | 2006-07-21 | 2008-03-27 | Dalton Jeremic J | Small volume symmetric flow single wafer ald apparatus |
WO2008016836A2 (en) * | 2006-07-29 | 2008-02-07 | Lotus Applied Technology, Llc | Radical-enhanced atomic layer deposition system and method |
US20080057195A1 (en) * | 2006-08-31 | 2008-03-06 | United Technologies Corporation | Non-line of sight coating technique |
KR20080027009A (ko) * | 2006-09-22 | 2008-03-26 | 에이에스엠지니텍코리아 주식회사 | 원자층 증착 장치 및 그를 이용한 다층막 증착 방법 |
US7879401B2 (en) * | 2006-12-22 | 2011-02-01 | The Regents Of The University Of Michigan | Organic vapor jet deposition using an exhaust |
US8043432B2 (en) * | 2007-02-12 | 2011-10-25 | Tokyo Electron Limited | Atomic layer deposition systems and methods |
US20080241384A1 (en) * | 2007-04-02 | 2008-10-02 | Asm Genitech Korea Ltd. | Lateral flow deposition apparatus and method of depositing film by using the apparatus |
US8216419B2 (en) * | 2008-03-28 | 2012-07-10 | Bridgelux, Inc. | Drilled CVD shower head |
US20090096349A1 (en) * | 2007-04-26 | 2009-04-16 | Moshtagh Vahid S | Cross flow cvd reactor |
KR100830590B1 (ko) * | 2007-06-01 | 2008-05-21 | 삼성전자주식회사 | 텅스텐막, 그 형성 방법, 이를 포함한 반도체 소자 및 그반도체 소자의 형성 방법 |
KR20090013286A (ko) * | 2007-08-01 | 2009-02-05 | 삼성전자주식회사 | 반도체 소자 제조설비 |
KR100918663B1 (ko) * | 2007-08-22 | 2009-09-22 | 주식회사 테라세미콘 | 반도체 제조 장치 |
US8440259B2 (en) * | 2007-09-05 | 2013-05-14 | Intermolecular, Inc. | Vapor based combinatorial processing |
EP2042619A3 (de) | 2007-09-28 | 2010-06-02 | OSRAM Opto Semiconductors GmbH | Beschichtungsvorrichtung und Verfahren zu deren Betrieb |
DE102008010041A1 (de) | 2007-09-28 | 2009-04-02 | Osram Opto Semiconductors Gmbh | Schichtabscheidevorrichtung und Verfahren zu deren Betrieb |
US8668775B2 (en) * | 2007-10-31 | 2014-03-11 | Toshiba Techno Center Inc. | Machine CVD shower head |
KR101376336B1 (ko) | 2007-11-27 | 2014-03-18 | 한국에이에스엠지니텍 주식회사 | 원자층 증착 장치 |
CN101451237B (zh) * | 2007-11-30 | 2012-02-08 | 中微半导体设备(上海)有限公司 | 具有多个等离子体反应区域的包括多个处理平台的等离子体反应室 |
KR101394109B1 (ko) | 2008-02-11 | 2014-05-13 | (주)소슬 | 기판 처리 장치 및 기판 처리 시스템 |
US20100012036A1 (en) * | 2008-07-11 | 2010-01-21 | Hugo Silva | Isolation for multi-single-wafer processing apparatus |
JP5423205B2 (ja) * | 2008-08-29 | 2014-02-19 | 東京エレクトロン株式会社 | 成膜装置 |
JP5276387B2 (ja) * | 2008-09-04 | 2013-08-28 | 東京エレクトロン株式会社 | 成膜装置、基板処理装置、成膜方法及びこの成膜方法を実行させるためのプログラムを記録した記録媒体 |
JP5544697B2 (ja) * | 2008-09-30 | 2014-07-09 | 東京エレクトロン株式会社 | 成膜装置 |
US8426250B2 (en) * | 2008-10-22 | 2013-04-23 | Intel Corporation | Laser-assisted chemical singulation of a wafer |
JP5445044B2 (ja) * | 2008-11-14 | 2014-03-19 | 東京エレクトロン株式会社 | 成膜装置 |
US10378106B2 (en) | 2008-11-14 | 2019-08-13 | Asm Ip Holding B.V. | Method of forming insulation film by modified PEALD |
JP2010153769A (ja) * | 2008-11-19 | 2010-07-08 | Tokyo Electron Ltd | 基板位置検出装置、基板位置検出方法、成膜装置、成膜方法、プログラム及びコンピュータ可読記憶媒体 |
US20100129984A1 (en) * | 2008-11-26 | 2010-05-27 | George Vakanas | Wafer singulation in high volume manufacturing |
DE102008062332A1 (de) * | 2008-12-15 | 2010-06-17 | Gühring Ohg | Vorrichtung zur Oberflächenbehandlung und/oder -beschichtung von Substratkomponenten |
US20100221426A1 (en) * | 2009-03-02 | 2010-09-02 | Fluens Corporation | Web Substrate Deposition System |
US20100227059A1 (en) | 2009-03-04 | 2010-09-09 | Tokyo Electron Limited | Film deposition apparatus, film deposition method, and computer readable storage medium |
JP5107285B2 (ja) * | 2009-03-04 | 2012-12-26 | 東京エレクトロン株式会社 | 成膜装置、成膜方法、プログラム、およびコンピュータ可読記憶媒体 |
US9394608B2 (en) | 2009-04-06 | 2016-07-19 | Asm America, Inc. | Semiconductor processing reactor and components thereof |
JP5131240B2 (ja) * | 2009-04-09 | 2013-01-30 | 東京エレクトロン株式会社 | 成膜装置、成膜方法及び記憶媒体 |
JP5181100B2 (ja) * | 2009-04-09 | 2013-04-10 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及び記憶媒体 |
US20110290175A1 (en) * | 2009-06-07 | 2011-12-01 | Veeco Instruments, Inc. | Multi-Chamber CVD Processing System |
KR101110080B1 (ko) * | 2009-07-08 | 2012-03-13 | 주식회사 유진테크 | 확산판을 선택적으로 삽입설치하는 기판처리방법 |
JP5287592B2 (ja) * | 2009-08-11 | 2013-09-11 | 東京エレクトロン株式会社 | 成膜装置 |
US8802201B2 (en) | 2009-08-14 | 2014-08-12 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
JP5434484B2 (ja) * | 2009-11-02 | 2014-03-05 | 東京エレクトロン株式会社 | 成膜装置、成膜方法及び記憶媒体 |
JP5257328B2 (ja) * | 2009-11-04 | 2013-08-07 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及び記憶媒体 |
JP5310512B2 (ja) * | 2009-12-02 | 2013-10-09 | 東京エレクトロン株式会社 | 基板処理装置 |
JP5553588B2 (ja) * | 2009-12-10 | 2014-07-16 | 東京エレクトロン株式会社 | 成膜装置 |
JP5482196B2 (ja) * | 2009-12-25 | 2014-04-23 | 東京エレクトロン株式会社 | 成膜装置、成膜方法及び記憶媒体 |
US8034723B2 (en) * | 2009-12-25 | 2011-10-11 | Tokyo Electron Limited | Film deposition apparatus and film deposition method |
JP5497423B2 (ja) * | 2009-12-25 | 2014-05-21 | 東京エレクトロン株式会社 | 成膜装置 |
JP5396264B2 (ja) * | 2009-12-25 | 2014-01-22 | 東京エレクトロン株式会社 | 成膜装置 |
KR101084184B1 (ko) | 2010-01-11 | 2011-11-17 | 삼성모바일디스플레이주식회사 | 박막 증착 장치 |
US8741394B2 (en) * | 2010-03-25 | 2014-06-03 | Novellus Systems, Inc. | In-situ deposition of film stacks |
JP5872141B2 (ja) * | 2010-05-20 | 2016-03-01 | 東京エレクトロン株式会社 | 基板処理装置、その制御装置およびその制御方法 |
FI124113B (fi) * | 2010-08-30 | 2014-03-31 | Beneq Oy | Laitteisto ja menetelmä substraatin pinnan muokkaamiseksi |
US8845806B2 (en) * | 2010-10-22 | 2014-09-30 | Asm Japan K.K. | Shower plate having different aperture dimensions and/or distributions |
US20120222620A1 (en) * | 2011-03-01 | 2012-09-06 | Applied Materials, Inc. | Atomic Layer Deposition Carousel with Continuous Rotation and Methods of Use |
US20120225207A1 (en) * | 2011-03-01 | 2012-09-06 | Applied Materials, Inc. | Apparatus and Process for Atomic Layer Deposition |
US8541069B2 (en) | 2011-04-11 | 2013-09-24 | United Technologies Corporation | Method of guided non-line of sight coating |
EP2518178B1 (en) * | 2011-04-29 | 2014-01-01 | Applied Materials, Inc. | Tooling carrier for inline coating machine, method of operating thereof and process of coating a substrate |
US9312155B2 (en) | 2011-06-06 | 2016-04-12 | Asm Japan K.K. | High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules |
US9175392B2 (en) * | 2011-06-17 | 2015-11-03 | Intermolecular, Inc. | System for multi-region processing |
US9793148B2 (en) | 2011-06-22 | 2017-10-17 | Asm Japan K.K. | Method for positioning wafers in multiple wafer transport |
US10364496B2 (en) | 2011-06-27 | 2019-07-30 | Asm Ip Holding B.V. | Dual section module having shared and unshared mass flow controllers |
US10854498B2 (en) | 2011-07-15 | 2020-12-01 | Asm Ip Holding B.V. | Wafer-supporting device and method for producing same |
US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
US8821641B2 (en) | 2011-09-30 | 2014-09-02 | Samsung Electronics Co., Ltd. | Nozzle unit, and apparatus and method for treating substrate with the same |
US9017481B1 (en) | 2011-10-28 | 2015-04-28 | Asm America, Inc. | Process feed management for semiconductor substrate processing |
US20130192761A1 (en) * | 2012-01-31 | 2013-08-01 | Joseph Yudovsky | Rotary Substrate Processing System |
US20130196078A1 (en) * | 2012-01-31 | 2013-08-01 | Joseph Yudovsky | Multi-Chamber Substrate Processing System |
JP6095172B2 (ja) * | 2012-03-30 | 2017-03-15 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法及び基板処理装置 |
US8946830B2 (en) | 2012-04-04 | 2015-02-03 | Asm Ip Holdings B.V. | Metal oxide protective layer for a semiconductor device |
US20130323422A1 (en) * | 2012-05-29 | 2013-12-05 | Applied Materials, Inc. | Apparatus for CVD and ALD with an Elongate Nozzle and Methods Of Use |
KR102070400B1 (ko) | 2012-06-29 | 2020-01-28 | 주성엔지니어링(주) | 기판 처리 장치 및 기판 처리 방법 |
JP6040609B2 (ja) * | 2012-07-20 | 2016-12-07 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
US9558931B2 (en) | 2012-07-27 | 2017-01-31 | Asm Ip Holding B.V. | System and method for gas-phase sulfur passivation of a semiconductor surface |
US9659799B2 (en) | 2012-08-28 | 2017-05-23 | Asm Ip Holding B.V. | Systems and methods for dynamic semiconductor process scheduling |
US9021985B2 (en) | 2012-09-12 | 2015-05-05 | Asm Ip Holdings B.V. | Process gas management for an inductively-coupled plasma deposition reactor |
US9324811B2 (en) | 2012-09-26 | 2016-04-26 | Asm Ip Holding B.V. | Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
US11043386B2 (en) | 2012-10-26 | 2021-06-22 | Applied Materials, Inc. | Enhanced spatial ALD of metals through controlled precursor mixing |
US9230815B2 (en) | 2012-10-26 | 2016-01-05 | Appled Materials, Inc. | Methods for depositing fluorine/carbon-free conformal tungsten |
US9640416B2 (en) | 2012-12-26 | 2017-05-02 | Asm Ip Holding B.V. | Single-and dual-chamber module-attachable wafer-handling chamber |
US20160376700A1 (en) | 2013-02-01 | 2016-12-29 | Asm Ip Holding B.V. | System for treatment of deposition reactor |
US9484191B2 (en) | 2013-03-08 | 2016-11-01 | Asm Ip Holding B.V. | Pulsed remote plasma method and system |
US9589770B2 (en) | 2013-03-08 | 2017-03-07 | Asm Ip Holding B.V. | Method and systems for in-situ formation of intermediate reactive species |
JP6134191B2 (ja) | 2013-04-07 | 2017-05-24 | 村川 惠美 | 回転型セミバッチald装置 |
CN104103549B (zh) * | 2013-04-07 | 2018-05-18 | 盛美半导体设备(上海)有限公司 | 半导体工艺腔室 |
US8993054B2 (en) | 2013-07-12 | 2015-03-31 | Asm Ip Holding B.V. | Method and system to reduce outgassing in a reaction chamber |
US9018111B2 (en) | 2013-07-22 | 2015-04-28 | Asm Ip Holding B.V. | Semiconductor reaction chamber with plasma capabilities |
KR102115337B1 (ko) * | 2013-07-31 | 2020-05-26 | 주성엔지니어링(주) | 기판 처리 장치 |
US9793115B2 (en) | 2013-08-14 | 2017-10-17 | Asm Ip Holding B.V. | Structures and devices including germanium-tin films and methods of forming same |
JP6338462B2 (ja) * | 2013-09-11 | 2018-06-06 | 東京エレクトロン株式会社 | プラズマ処理装置 |
KR101466816B1 (ko) * | 2013-09-23 | 2014-12-10 | 국제엘렉트릭코리아 주식회사 | 히터 부재 및 그것을 갖는 기판 처리 장치 |
US9240412B2 (en) | 2013-09-27 | 2016-01-19 | Asm Ip Holding B.V. | Semiconductor structure and device and methods of forming same using selective epitaxial process |
US9556516B2 (en) | 2013-10-09 | 2017-01-31 | ASM IP Holding B.V | Method for forming Ti-containing film by PEALD using TDMAT or TDEAT |
US9694436B2 (en) * | 2013-11-04 | 2017-07-04 | Veeco Precision Surface Processing Llc | System and method for flux coat, reflow and clean |
US10179947B2 (en) | 2013-11-26 | 2019-01-15 | Asm Ip Holding B.V. | Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition |
JP2017503079A (ja) * | 2014-01-05 | 2017-01-26 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 空間的原子層堆積又はパルス化学気相堆積を使用する膜堆積 |
JP6287240B2 (ja) * | 2014-01-17 | 2018-03-07 | 東京エレクトロン株式会社 | 真空処理装置及び真空処理方法 |
US10683571B2 (en) | 2014-02-25 | 2020-06-16 | Asm Ip Holding B.V. | Gas supply manifold and method of supplying gases to chamber using same |
US9447498B2 (en) | 2014-03-18 | 2016-09-20 | Asm Ip Holding B.V. | Method for performing uniform processing in gas system-sharing multiple reaction chambers |
US10167557B2 (en) | 2014-03-18 | 2019-01-01 | Asm Ip Holding B.V. | Gas distribution system, reactor including the system, and methods of using the same |
US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
US9404587B2 (en) | 2014-04-24 | 2016-08-02 | ASM IP Holding B.V | Lockout tagout for semiconductor vacuum valve |
US10858737B2 (en) | 2014-07-28 | 2020-12-08 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
US9543180B2 (en) | 2014-08-01 | 2017-01-10 | Asm Ip Holding B.V. | Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum |
US9890456B2 (en) | 2014-08-21 | 2018-02-13 | Asm Ip Holding B.V. | Method and system for in situ formation of gas-phase compounds |
KR102017962B1 (ko) * | 2014-09-17 | 2019-09-03 | 도쿄엘렉트론가부시키가이샤 | 샤워 헤드 및 성막 장치 |
US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
US9657845B2 (en) | 2014-10-07 | 2017-05-23 | Asm Ip Holding B.V. | Variable conductance gas distribution apparatus and method |
JP6330623B2 (ja) * | 2014-10-31 | 2018-05-30 | 東京エレクトロン株式会社 | 成膜装置、成膜方法及び記憶媒体 |
JP6330630B2 (ja) * | 2014-11-13 | 2018-05-30 | 東京エレクトロン株式会社 | 成膜装置 |
KR102300403B1 (ko) | 2014-11-19 | 2021-09-09 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
JP6404111B2 (ja) * | 2014-12-18 | 2018-10-10 | 東京エレクトロン株式会社 | プラズマ処理装置 |
KR102263121B1 (ko) | 2014-12-22 | 2021-06-09 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 및 그 제조 방법 |
US9478415B2 (en) | 2015-02-13 | 2016-10-25 | Asm Ip Holding B.V. | Method for forming film having low resistance and shallow junction depth |
US10529542B2 (en) | 2015-03-11 | 2020-01-07 | Asm Ip Holdings B.V. | Cross-flow reactor and method |
US9601391B2 (en) * | 2015-03-12 | 2017-03-21 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Mechanical stress measurement during thin-film fabrication |
US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
US10954597B2 (en) * | 2015-03-17 | 2021-03-23 | Asm Ip Holding B.V. | Atomic layer deposition apparatus |
US10233528B2 (en) | 2015-06-08 | 2019-03-19 | Applied Materials, Inc. | Mask for deposition system and method for using the mask |
US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
JP6447393B2 (ja) * | 2015-07-06 | 2019-01-09 | 東京エレクトロン株式会社 | 成膜処理装置、成膜処理方法及び記憶媒体 |
US10600673B2 (en) | 2015-07-07 | 2020-03-24 | Asm Ip Holding B.V. | Magnetic susceptor to baseplate seal |
US9899291B2 (en) | 2015-07-13 | 2018-02-20 | Asm Ip Holding B.V. | Method for protecting layer by forming hydrocarbon-based extremely thin film |
US10043661B2 (en) | 2015-07-13 | 2018-08-07 | Asm Ip Holding B.V. | Method for protecting layer by forming hydrocarbon-based extremely thin film |
US10083836B2 (en) | 2015-07-24 | 2018-09-25 | Asm Ip Holding B.V. | Formation of boron-doped titanium metal films with high work function |
US10087525B2 (en) | 2015-08-04 | 2018-10-02 | Asm Ip Holding B.V. | Variable gap hard stop design |
US9647114B2 (en) | 2015-08-14 | 2017-05-09 | Asm Ip Holding B.V. | Methods of forming highly p-type doped germanium tin films and structures and devices including the films |
KR20170022459A (ko) * | 2015-08-20 | 2017-03-02 | 주성엔지니어링(주) | 기판 처리 장치 및 기판 처리 방법 |
US9711345B2 (en) | 2015-08-25 | 2017-07-18 | Asm Ip Holding B.V. | Method for forming aluminum nitride-based film by PEALD |
US9960072B2 (en) | 2015-09-29 | 2018-05-01 | Asm Ip Holding B.V. | Variable adjustment for precise matching of multiple chamber cavity housings |
US9909214B2 (en) | 2015-10-15 | 2018-03-06 | Asm Ip Holding B.V. | Method for depositing dielectric film in trenches by PEALD |
US11244822B2 (en) * | 2015-10-20 | 2022-02-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for manufacturing a thin film and a method therefor |
US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
US10322384B2 (en) | 2015-11-09 | 2019-06-18 | Asm Ip Holding B.V. | Counter flow mixer for process chamber |
US9455138B1 (en) | 2015-11-10 | 2016-09-27 | Asm Ip Holding B.V. | Method for forming dielectric film in trenches by PEALD using H-containing gas |
US9905420B2 (en) | 2015-12-01 | 2018-02-27 | Asm Ip Holding B.V. | Methods of forming silicon germanium tin films and structures and devices including the films |
US9607837B1 (en) | 2015-12-21 | 2017-03-28 | Asm Ip Holding B.V. | Method for forming silicon oxide cap layer for solid state diffusion process |
US9735024B2 (en) | 2015-12-28 | 2017-08-15 | Asm Ip Holding B.V. | Method of atomic layer etching using functional group-containing fluorocarbon |
US9627221B1 (en) | 2015-12-28 | 2017-04-18 | Asm Ip Holding B.V. | Continuous process incorporating atomic layer etching |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US10468251B2 (en) | 2016-02-19 | 2019-11-05 | Asm Ip Holding B.V. | Method for forming spacers using silicon nitride film for spacer-defined multiple patterning |
US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US9754779B1 (en) | 2016-02-19 | 2017-09-05 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10501866B2 (en) | 2016-03-09 | 2019-12-10 | Asm Ip Holding B.V. | Gas distribution apparatus for improved film uniformity in an epitaxial system |
US10343920B2 (en) | 2016-03-18 | 2019-07-09 | Asm Ip Holding B.V. | Aligned carbon nanotubes |
US9892913B2 (en) | 2016-03-24 | 2018-02-13 | Asm Ip Holding B.V. | Radial and thickness control via biased multi-port injection settings |
TWI729101B (zh) | 2016-04-02 | 2021-06-01 | 美商應用材料股份有限公司 | 用於旋轉料架基座中的晶圓旋轉的設備及方法 |
US10087522B2 (en) | 2016-04-21 | 2018-10-02 | Asm Ip Holding B.V. | Deposition of metal borides |
US10190213B2 (en) | 2016-04-21 | 2019-01-29 | Asm Ip Holding B.V. | Deposition of metal borides |
US10865475B2 (en) | 2016-04-21 | 2020-12-15 | Asm Ip Holding B.V. | Deposition of metal borides and silicides |
US11015246B2 (en) | 2016-04-24 | 2021-05-25 | Applied Materials, Inc. | Apparatus and methods for depositing ALD films with enhanced chemical exchange |
TWI734770B (zh) | 2016-04-24 | 2021-08-01 | 美商應用材料股份有限公司 | 用於防止空間ald處理腔室中之背側沉積的設備 |
US10367080B2 (en) | 2016-05-02 | 2019-07-30 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
US10032628B2 (en) | 2016-05-02 | 2018-07-24 | Asm Ip Holding B.V. | Source/drain performance through conformal solid state doping |
KR102592471B1 (ko) | 2016-05-17 | 2023-10-20 | 에이에스엠 아이피 홀딩 비.브이. | 금속 배선 형성 방법 및 이를 이용한 반도체 장치의 제조 방법 |
US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
US10388509B2 (en) | 2016-06-28 | 2019-08-20 | Asm Ip Holding B.V. | Formation of epitaxial layers via dislocation filtering |
US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
US9793135B1 (en) | 2016-07-14 | 2017-10-17 | ASM IP Holding B.V | Method of cyclic dry etching using etchant film |
US10714385B2 (en) | 2016-07-19 | 2020-07-14 | Asm Ip Holding B.V. | Selective deposition of tungsten |
KR102354490B1 (ko) | 2016-07-27 | 2022-01-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 |
US10177025B2 (en) | 2016-07-28 | 2019-01-08 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
KR102532607B1 (ko) | 2016-07-28 | 2023-05-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 가공 장치 및 그 동작 방법 |
US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10395919B2 (en) | 2016-07-28 | 2019-08-27 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10090316B2 (en) | 2016-09-01 | 2018-10-02 | Asm Ip Holding B.V. | 3D stacked multilayer semiconductor memory using doped select transistor channel |
US10410943B2 (en) | 2016-10-13 | 2019-09-10 | Asm Ip Holding B.V. | Method for passivating a surface of a semiconductor and related systems |
US10643826B2 (en) | 2016-10-26 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for thermally calibrating reaction chambers |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US10229833B2 (en) | 2016-11-01 | 2019-03-12 | Asm Ip Holding B.V. | Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10643904B2 (en) | 2016-11-01 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for forming a semiconductor device and related semiconductor device structures |
US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10435790B2 (en) | 2016-11-01 | 2019-10-08 | Asm Ip Holding B.V. | Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap |
US10134757B2 (en) | 2016-11-07 | 2018-11-20 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by using the method |
KR102546317B1 (ko) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기체 공급 유닛 및 이를 포함하는 기판 처리 장치 |
US10340135B2 (en) | 2016-11-28 | 2019-07-02 | Asm Ip Holding B.V. | Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride |
KR20180068582A (ko) | 2016-12-14 | 2018-06-22 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US9916980B1 (en) | 2016-12-15 | 2018-03-13 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
KR20180070971A (ko) * | 2016-12-19 | 2018-06-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US10867788B2 (en) | 2016-12-28 | 2020-12-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
US10655221B2 (en) | 2017-02-09 | 2020-05-19 | Asm Ip Holding B.V. | Method for depositing oxide film by thermal ALD and PEALD |
US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
US10529563B2 (en) | 2017-03-29 | 2020-01-07 | Asm Ip Holdings B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
US10283353B2 (en) | 2017-03-29 | 2019-05-07 | Asm Ip Holding B.V. | Method of reforming insulating film deposited on substrate with recess pattern |
US10103040B1 (en) | 2017-03-31 | 2018-10-16 | Asm Ip Holding B.V. | Apparatus and method for manufacturing a semiconductor device |
USD830981S1 (en) | 2017-04-07 | 2018-10-16 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate processing apparatus |
KR102457289B1 (ko) | 2017-04-25 | 2022-10-21 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
US10446393B2 (en) | 2017-05-08 | 2019-10-15 | Asm Ip Holding B.V. | Methods for forming silicon-containing epitaxial layers and related semiconductor device structures |
US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US10892156B2 (en) | 2017-05-08 | 2021-01-12 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film on a substrate and related semiconductor device structures |
US10504742B2 (en) | 2017-05-31 | 2019-12-10 | Asm Ip Holding B.V. | Method of atomic layer etching using hydrogen plasma |
US10886123B2 (en) | 2017-06-02 | 2021-01-05 | Asm Ip Holding B.V. | Methods for forming low temperature semiconductor layers and related semiconductor device structures |
US11306395B2 (en) * | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
US10685834B2 (en) | 2017-07-05 | 2020-06-16 | Asm Ip Holdings B.V. | Methods for forming a silicon germanium tin layer and related semiconductor device structures |
KR20190009245A (ko) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물 |
US10541333B2 (en) | 2017-07-19 | 2020-01-21 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US10605530B2 (en) | 2017-07-26 | 2020-03-31 | Asm Ip Holding B.V. | Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace |
US10312055B2 (en) | 2017-07-26 | 2019-06-04 | Asm Ip Holding B.V. | Method of depositing film by PEALD using negative bias |
US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US10249524B2 (en) | 2017-08-09 | 2019-04-02 | Asm Ip Holding B.V. | Cassette holder assembly for a substrate cassette and holding member for use in such assembly |
US10236177B1 (en) | 2017-08-22 | 2019-03-19 | ASM IP Holding B.V.. | Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures |
USD900036S1 (en) | 2017-08-24 | 2020-10-27 | Asm Ip Holding B.V. | Heater electrical connector and adapter |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
KR102491945B1 (ko) | 2017-08-30 | 2023-01-26 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
KR102401446B1 (ko) | 2017-08-31 | 2022-05-24 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
JP2019052339A (ja) * | 2017-09-13 | 2019-04-04 | 東京エレクトロン株式会社 | 排気管のクリーニング方法 |
US10607895B2 (en) | 2017-09-18 | 2020-03-31 | Asm Ip Holdings B.V. | Method for forming a semiconductor device structure comprising a gate fill metal |
KR102630301B1 (ko) | 2017-09-21 | 2024-01-29 | 에이에스엠 아이피 홀딩 비.브이. | 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치 |
US10844484B2 (en) | 2017-09-22 | 2020-11-24 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US10319588B2 (en) | 2017-10-10 | 2019-06-11 | Asm Ip Holding B.V. | Method for depositing a metal chalcogenide on a substrate by cyclical deposition |
TWI768849B (zh) | 2017-10-27 | 2022-06-21 | 美商應用材料股份有限公司 | 具有空間分離的單個晶圓處理環境 |
US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
KR102443047B1 (ko) | 2017-11-16 | 2022-09-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 방법 및 그에 의해 제조된 장치 |
US10910262B2 (en) | 2017-11-16 | 2021-02-02 | Asm Ip Holding B.V. | Method of selectively depositing a capping layer structure on a semiconductor device structure |
US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
CN111316417B (zh) | 2017-11-27 | 2023-12-22 | 阿斯莫Ip控股公司 | 与批式炉偕同使用的用于储存晶圆匣的储存装置 |
WO2019103610A1 (en) | 2017-11-27 | 2019-05-31 | Asm Ip Holding B.V. | Apparatus including a clean mini environment |
US10290508B1 (en) | 2017-12-05 | 2019-05-14 | Asm Ip Holding B.V. | Method for forming vertical spacers for spacer-defined patterning |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
CN111630203A (zh) | 2018-01-19 | 2020-09-04 | Asm Ip私人控股有限公司 | 通过等离子体辅助沉积来沉积间隙填充层的方法 |
TWI799494B (zh) | 2018-01-19 | 2023-04-21 | 荷蘭商Asm 智慧財產控股公司 | 沈積方法 |
USD903477S1 (en) | 2018-01-24 | 2020-12-01 | Asm Ip Holdings B.V. | Metal clamp |
US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
US10535516B2 (en) | 2018-02-01 | 2020-01-14 | Asm Ip Holdings B.V. | Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures |
USD880437S1 (en) | 2018-02-01 | 2020-04-07 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
CN111699278B (zh) | 2018-02-14 | 2023-05-16 | Asm Ip私人控股有限公司 | 通过循环沉积工艺在衬底上沉积含钌膜的方法 |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US10731249B2 (en) | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
KR102636427B1 (ko) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 장치 |
US10658181B2 (en) | 2018-02-20 | 2020-05-19 | Asm Ip Holding B.V. | Method of spacer-defined direct patterning in semiconductor fabrication |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
KR102646467B1 (ko) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조 |
US10510536B2 (en) | 2018-03-29 | 2019-12-17 | Asm Ip Holding B.V. | Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber |
US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102501472B1 (ko) | 2018-03-30 | 2023-02-20 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 |
TWI811348B (zh) | 2018-05-08 | 2023-08-11 | 荷蘭商Asm 智慧財產控股公司 | 藉由循環沉積製程於基板上沉積氧化物膜之方法及相關裝置結構 |
CN110473769A (zh) * | 2018-05-11 | 2019-11-19 | 圆益Ips股份有限公司 | 薄膜形成方法 |
KR20190129718A (ko) | 2018-05-11 | 2019-11-20 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 피도핑 금속 탄화물 막을 형성하는 방법 및 관련 반도체 소자 구조 |
KR102596988B1 (ko) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 그에 의해 제조된 장치 |
US11270899B2 (en) | 2018-06-04 | 2022-03-08 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
KR102568797B1 (ko) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 시스템 |
CN112292478A (zh) | 2018-06-27 | 2021-01-29 | Asm Ip私人控股有限公司 | 用于形成含金属的材料的循环沉积方法及包含含金属的材料的膜和结构 |
CN112292477A (zh) | 2018-06-27 | 2021-01-29 | Asm Ip私人控股有限公司 | 用于形成含金属的材料的循环沉积方法及包含含金属的材料的膜和结构 |
KR20200002519A (ko) | 2018-06-29 | 2020-01-08 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10767789B2 (en) | 2018-07-16 | 2020-09-08 | Asm Ip Holding B.V. | Diaphragm valves, valve components, and methods for forming valve components |
US10483099B1 (en) | 2018-07-26 | 2019-11-19 | Asm Ip Holding B.V. | Method for forming thermally stable organosilicon polymer film |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
US10829852B2 (en) | 2018-08-16 | 2020-11-10 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR20200030162A (ko) | 2018-09-11 | 2020-03-20 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
CN110970344A (zh) | 2018-10-01 | 2020-04-07 | Asm Ip控股有限公司 | 衬底保持设备、包含所述设备的系统及其使用方法 |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102592699B1 (ko) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치 |
US10847365B2 (en) | 2018-10-11 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming conformal silicon carbide film by cyclic CVD |
US10811256B2 (en) | 2018-10-16 | 2020-10-20 | Asm Ip Holding B.V. | Method for etching a carbon-containing feature |
KR102605121B1 (ko) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
KR102546322B1 (ko) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US10381219B1 (en) | 2018-10-25 | 2019-08-13 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
KR20200051105A (ko) | 2018-11-02 | 2020-05-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 기판 처리 장치 |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US10559458B1 (en) | 2018-11-26 | 2020-02-11 | Asm Ip Holding B.V. | Method of forming oxynitride film |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
KR102636428B1 (ko) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치를 세정하는 방법 |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
TW202037745A (zh) | 2018-12-14 | 2020-10-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成裝置結構之方法、其所形成之結構及施行其之系統 |
TW202405220A (zh) | 2019-01-17 | 2024-02-01 | 荷蘭商Asm Ip 私人控股有限公司 | 藉由循環沈積製程於基板上形成含過渡金屬膜之方法 |
KR20200091543A (ko) | 2019-01-22 | 2020-07-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
CN111524788B (zh) | 2019-02-01 | 2023-11-24 | Asm Ip私人控股有限公司 | 氧化硅的拓扑选择性膜形成的方法 |
KR102626263B1 (ko) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치 |
JP2020136677A (ja) | 2019-02-20 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材表面内に形成された凹部を充填するための周期的堆積方法および装置 |
TW202044325A (zh) | 2019-02-20 | 2020-12-01 | 荷蘭商Asm Ip私人控股有限公司 | 填充一基板之一表面內所形成的一凹槽的方法、根據其所形成之半導體結構、及半導體處理設備 |
US11482533B2 (en) | 2019-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Apparatus and methods for plug fill deposition in 3-D NAND applications |
JP2020133004A (ja) | 2019-02-22 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材を処理するための基材処理装置および方法 |
KR20200108243A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOC 층을 포함한 구조체 및 이의 형성 방법 |
KR20200108248A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOCN 층을 포함한 구조체 및 이의 형성 방법 |
KR20200108242A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체 |
KR20200116033A (ko) | 2019-03-28 | 2020-10-08 | 에이에스엠 아이피 홀딩 비.브이. | 도어 개방기 및 이를 구비한 기판 처리 장치 |
KR20200116855A (ko) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자를 제조하는 방법 |
KR20200123380A (ko) | 2019-04-19 | 2020-10-29 | 에이에스엠 아이피 홀딩 비.브이. | 층 형성 방법 및 장치 |
KR20200125453A (ko) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 기상 반응기 시스템 및 이를 사용하는 방법 |
KR20200130121A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 딥 튜브가 있는 화학물질 공급원 용기 |
KR20200130118A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 비정질 탄소 중합체 막을 개질하는 방법 |
KR20200130652A (ko) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조 |
JP2020188254A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
JP2020188255A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
US10998209B2 (en) | 2019-05-31 | 2021-05-04 | Applied Materials, Inc. | Substrate processing platforms including multiple processing chambers |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
KR20200141003A (ko) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | 가스 감지기를 포함하는 기상 반응기 시스템 |
KR20200143254A (ko) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조 |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
KR20210005515A (ko) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법 |
JP7499079B2 (ja) | 2019-07-09 | 2024-06-13 | エーエスエム・アイピー・ホールディング・ベー・フェー | 同軸導波管を用いたプラズマ装置、基板処理方法 |
CN112216646A (zh) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | 基板支撑组件及包括其的基板处理装置 |
KR20210010307A (ko) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210010816A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 라디칼 보조 점화 플라즈마 시스템 및 방법 |
KR20210010820A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 게르마늄 구조를 형성하는 방법 |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
CN112242296A (zh) | 2019-07-19 | 2021-01-19 | Asm Ip私人控股有限公司 | 形成拓扑受控的无定形碳聚合物膜的方法 |
TW202113936A (zh) | 2019-07-29 | 2021-04-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於利用n型摻雜物及/或替代摻雜物選擇性沉積以達成高摻雜物併入之方法 |
CN112309899A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112309900A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
CN112323048B (zh) | 2019-08-05 | 2024-02-09 | Asm Ip私人控股有限公司 | 用于化学源容器的液位传感器 |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
JP2021031769A (ja) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー.ブイ. | 成膜原料混合ガス生成装置及び成膜装置 |
KR20210024423A (ko) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 홀을 구비한 구조체를 형성하기 위한 방법 |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
KR20210024420A (ko) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법 |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
KR20210029090A (ko) | 2019-09-04 | 2021-03-15 | 에이에스엠 아이피 홀딩 비.브이. | 희생 캡핑 층을 이용한 선택적 증착 방법 |
KR20210029663A (ko) | 2019-09-05 | 2021-03-16 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
CN112593212B (zh) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法 |
TW202129060A (zh) | 2019-10-08 | 2021-08-01 | 荷蘭商Asm Ip控股公司 | 基板處理裝置、及基板處理方法 |
KR20210042810A (ko) | 2019-10-08 | 2021-04-20 | 에이에스엠 아이피 홀딩 비.브이. | 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법 |
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US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
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KR20210054983A (ko) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템 |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
KR20210062561A (ko) | 2019-11-20 | 2021-05-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템 |
KR20210065848A (ko) | 2019-11-26 | 2021-06-04 | 에이에스엠 아이피 홀딩 비.브이. | 제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법 |
CN112951697A (zh) | 2019-11-26 | 2021-06-11 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112885692A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112885693A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
JP2021090042A (ja) | 2019-12-02 | 2021-06-10 | エーエスエム アイピー ホールディング ビー.ブイ. | 基板処理装置、基板処理方法 |
KR20210070898A (ko) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
JP2021097227A (ja) | 2019-12-17 | 2021-06-24 | エーエスエム・アイピー・ホールディング・ベー・フェー | 窒化バナジウム層および窒化バナジウム層を含む構造体を形成する方法 |
US11527403B2 (en) | 2019-12-19 | 2022-12-13 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
TW202140135A (zh) | 2020-01-06 | 2021-11-01 | 荷蘭商Asm Ip私人控股有限公司 | 氣體供應總成以及閥板總成 |
US11993847B2 (en) | 2020-01-08 | 2024-05-28 | Asm Ip Holding B.V. | Injector |
US11551912B2 (en) | 2020-01-20 | 2023-01-10 | Asm Ip Holding B.V. | Method of forming thin film and method of modifying surface of thin film |
TW202130846A (zh) | 2020-02-03 | 2021-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成包括釩或銦層的結構之方法 |
TW202146882A (zh) | 2020-02-04 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 驗證一物品之方法、用於驗證一物品之設備、及用於驗證一反應室之系統 |
US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
US11781243B2 (en) | 2020-02-17 | 2023-10-10 | Asm Ip Holding B.V. | Method for depositing low temperature phosphorous-doped silicon |
TW202203344A (zh) | 2020-02-28 | 2022-01-16 | 荷蘭商Asm Ip控股公司 | 專用於零件清潔的系統 |
KR20210116240A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 조절성 접합부를 갖는 기판 핸들링 장치 |
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KR20210117157A (ko) | 2020-03-12 | 2021-09-28 | 에이에스엠 아이피 홀딩 비.브이. | 타겟 토폴로지 프로파일을 갖는 층 구조를 제조하기 위한 방법 |
KR20210124042A (ko) | 2020-04-02 | 2021-10-14 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 |
TW202146689A (zh) | 2020-04-03 | 2021-12-16 | 荷蘭商Asm Ip控股公司 | 阻障層形成方法及半導體裝置的製造方法 |
TW202145344A (zh) | 2020-04-08 | 2021-12-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於選擇性蝕刻氧化矽膜之設備及方法 |
US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
US11996289B2 (en) | 2020-04-16 | 2024-05-28 | Asm Ip Holding B.V. | Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods |
KR20210132600A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템 |
KR20210132576A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐 나이트라이드 함유 층을 형성하는 방법 및 이를 포함하는 구조 |
TW202146831A (zh) | 2020-04-24 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 垂直批式熔爐總成、及用於冷卻垂直批式熔爐之方法 |
KR20210134226A (ko) | 2020-04-29 | 2021-11-09 | 에이에스엠 아이피 홀딩 비.브이. | 고체 소스 전구체 용기 |
KR20210134869A (ko) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Foup 핸들러를 이용한 foup의 빠른 교환 |
KR20210141379A (ko) | 2020-05-13 | 2021-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 반응기 시스템용 레이저 정렬 고정구 |
TW202147383A (zh) | 2020-05-19 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 基材處理設備 |
KR20210145078A (ko) | 2020-05-21 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법 |
TW202200837A (zh) | 2020-05-22 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於在基材上形成薄膜之反應系統 |
TW202201602A (zh) | 2020-05-29 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
TW202218133A (zh) | 2020-06-24 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成含矽層之方法 |
TW202217953A (zh) | 2020-06-30 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
TW202219628A (zh) | 2020-07-17 | 2022-05-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於光微影之結構與方法 |
TW202204662A (zh) | 2020-07-20 | 2022-02-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於沉積鉬層之方法及系統 |
US11749542B2 (en) | 2020-07-27 | 2023-09-05 | Applied Materials, Inc. | Apparatus, system, and method for non-contact temperature monitoring of substrate supports |
US11817331B2 (en) | 2020-07-27 | 2023-11-14 | Applied Materials, Inc. | Substrate holder replacement with protective disk during pasting process |
KR20220027026A (ko) | 2020-08-26 | 2022-03-07 | 에이에스엠 아이피 홀딩 비.브이. | 금속 실리콘 산화물 및 금속 실리콘 산질화물 층을 형성하기 위한 방법 및 시스템 |
US11600507B2 (en) | 2020-09-09 | 2023-03-07 | Applied Materials, Inc. | Pedestal assembly for a substrate processing chamber |
USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
US11610799B2 (en) | 2020-09-18 | 2023-03-21 | Applied Materials, Inc. | Electrostatic chuck having a heating and chucking capabilities |
USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
US12009224B2 (en) | 2020-09-29 | 2024-06-11 | Asm Ip Holding B.V. | Apparatus and method for etching metal nitrides |
TW202229613A (zh) | 2020-10-14 | 2022-08-01 | 荷蘭商Asm Ip私人控股有限公司 | 於階梯式結構上沉積材料的方法 |
TW202217037A (zh) | 2020-10-22 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 沉積釩金屬的方法、結構、裝置及沉積總成 |
TW202223136A (zh) | 2020-10-28 | 2022-06-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於在基板上形成層之方法、及半導體處理系統 |
TW202235675A (zh) | 2020-11-30 | 2022-09-16 | 荷蘭商Asm Ip私人控股有限公司 | 注入器、及基板處理設備 |
US11946137B2 (en) | 2020-12-16 | 2024-04-02 | Asm Ip Holding B.V. | Runout and wobble measurement fixtures |
TW202231903A (zh) | 2020-12-22 | 2022-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成 |
US11674227B2 (en) | 2021-02-03 | 2023-06-13 | Applied Materials, Inc. | Symmetric pump down mini-volume with laminar flow cavity gas injection for high and low pressure |
USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
USD1023959S1 (en) | 2021-05-11 | 2024-04-23 | Asm Ip Holding B.V. | Electrode for substrate processing apparatus |
US12002668B2 (en) | 2021-06-25 | 2024-06-04 | Applied Materials, Inc. | Thermal management hardware for uniform temperature control for enhanced bake-out for cluster tool |
USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
JP7160421B1 (ja) | 2022-02-10 | 2022-10-25 | 株式会社シー・ヴィ・リサーチ | 成膜装置、成膜方法及びガスノズル |
Family Cites Families (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE393967B (sv) * | 1974-11-29 | 1977-05-31 | Sateko Oy | Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket |
JPS6226811A (ja) * | 1985-07-26 | 1987-02-04 | Fujitsu Ltd | 半導体製造装置 |
US4699805A (en) * | 1986-07-03 | 1987-10-13 | Motorola Inc. | Process and apparatus for the low pressure chemical vapor deposition of thin films |
US4976996A (en) * | 1987-02-17 | 1990-12-11 | Lam Research Corporation | Chemical vapor deposition reactor and method of use thereof |
JPS63266072A (ja) * | 1987-04-23 | 1988-11-02 | Hitachi Electronics Eng Co Ltd | 気相反応装置 |
JP2576135B2 (ja) * | 1987-07-14 | 1997-01-29 | 日本電気株式会社 | Si基板上のGaP結晶の成長方法 |
US5166092A (en) | 1988-01-28 | 1992-11-24 | Fujitsu Limited | Method of growing compound semiconductor epitaxial layer by atomic layer epitaxy |
WO1990010092A1 (en) * | 1989-02-24 | 1990-09-07 | Massachusetts Institute Of Technology | A modified stagnation flow apparatus for chemical vapor deposition providing excellent control of the deposition |
JPH0824191B2 (ja) | 1989-03-17 | 1996-03-06 | 富士通株式会社 | 薄膜トランジスタ |
JP2940051B2 (ja) | 1990-02-09 | 1999-08-25 | 富士通株式会社 | 絶縁薄膜の形成方法 |
US5071670A (en) * | 1990-06-11 | 1991-12-10 | Kelly Michael A | Method for chemical vapor deposition under a single reactor vessel divided into separate reaction chambers each with its own depositing and exhausting means |
US5225366A (en) * | 1990-06-22 | 1993-07-06 | The United States Of America As Represented By The Secretary Of The Navy | Apparatus for and a method of growing thin films of elemental semiconductors |
JPH04236465A (ja) | 1991-01-18 | 1992-08-25 | Fujitsu Ltd | 薄膜トランジスタおよびその製造方法 |
JPH04287912A (ja) * | 1991-02-19 | 1992-10-13 | Mitsubishi Electric Corp | 半導体製造装置 |
JP3126787B2 (ja) | 1992-01-30 | 2001-01-22 | 理化学研究所 | 成膜方法および成膜装置 |
JPH05251701A (ja) * | 1992-03-04 | 1993-09-28 | Fujitsu Ltd | 薄膜トランジスタの形成方法 |
US5338362A (en) * | 1992-08-29 | 1994-08-16 | Tokyo Electron Limited | Apparatus for processing semiconductor wafer comprising continuously rotating wafer table and plural chamber compartments |
US5647945A (en) * | 1993-08-25 | 1997-07-15 | Tokyo Electron Limited | Vacuum processing apparatus |
JP3144665B2 (ja) | 1993-09-17 | 2001-03-12 | 東京エレクトロン株式会社 | 処理用ガスの供給方法 |
JP2963973B2 (ja) * | 1993-09-17 | 1999-10-18 | 東京エレクトロン株式会社 | バッチ式コールドウォール処理装置及びそのクリーニング方法 |
DE19603323A1 (de) * | 1996-01-30 | 1997-08-07 | Siemens Ag | Verfahren und Vorrichtung zum Herstellen von SiC durch CVD mit verbesserter Gasausnutzung |
TW340957B (en) * | 1996-02-01 | 1998-09-21 | Canon Hanbai Kk | Plasma processor and gas release device |
JPH09330884A (ja) * | 1996-06-07 | 1997-12-22 | Sony Corp | エピタキシャル成長装置 |
US5747113A (en) * | 1996-07-29 | 1998-05-05 | Tsai; Charles Su-Chang | Method of chemical vapor deposition for producing layer variation by planetary susceptor rotation |
US5807792A (en) * | 1996-12-18 | 1998-09-15 | Siemens Aktiengesellschaft | Uniform distribution of reactants in a device layer |
US5879459A (en) | 1997-08-29 | 1999-03-09 | Genus, Inc. | Vertically-stacked process reactor and cluster tool system for atomic layer deposition |
JP4114972B2 (ja) * | 1997-05-27 | 2008-07-09 | キヤノンアネルバ株式会社 | 基板処理装置 |
US5951770A (en) * | 1997-06-04 | 1999-09-14 | Applied Materials, Inc. | Carousel wafer transfer system |
US6020024A (en) | 1997-08-04 | 2000-02-01 | Motorola, Inc. | Method for forming high dielectric constant metal oxides |
US6395640B2 (en) * | 1999-12-17 | 2002-05-28 | Texas Instruments Incorporated | Apparatus and method for selectivity restricting process fluid flow in semiconductor processing |
US6143082A (en) * | 1998-10-08 | 2000-11-07 | Novellus Systems, Inc. | Isolation of incompatible processes in a multi-station processing chamber |
KR100347379B1 (ko) | 1999-05-01 | 2002-08-07 | 주식회사 피케이엘 | 복수매 기판의 박막 증착 공정이 가능한 원자층 증착장치 |
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US6576062B2 (en) | 2003-06-10 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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LAPS | Cancellation because of no payment of annual fees |