JP6910118B2 - 成膜方法および成膜システム、ならびに表面処理方法 - Google Patents
成膜方法および成膜システム、ならびに表面処理方法 Download PDFInfo
- Publication number
- JP6910118B2 JP6910118B2 JP2016154425A JP2016154425A JP6910118B2 JP 6910118 B2 JP6910118 B2 JP 6910118B2 JP 2016154425 A JP2016154425 A JP 2016154425A JP 2016154425 A JP2016154425 A JP 2016154425A JP 6910118 B2 JP6910118 B2 JP 6910118B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- gas
- treatment
- surface treatment
- film forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004381 surface treatment Methods 0.000 title claims description 114
- 238000000034 method Methods 0.000 title claims description 55
- 230000015572 biosynthetic process Effects 0.000 title claims description 51
- 239000007789 gas Substances 0.000 claims description 212
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 74
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 56
- 125000005372 silanol group Chemical group 0.000 claims description 40
- 239000002184 metal Substances 0.000 claims description 36
- 229910052751 metal Inorganic materials 0.000 claims description 36
- 239000007864 aqueous solution Substances 0.000 claims description 35
- 239000002994 raw material Substances 0.000 claims description 35
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 34
- 229910052739 hydrogen Inorganic materials 0.000 claims description 34
- 150000004767 nitrides Chemical class 0.000 claims description 32
- 238000004140 cleaning Methods 0.000 claims description 31
- 230000007246 mechanism Effects 0.000 claims description 31
- 239000012530 fluid Substances 0.000 claims description 30
- 229910010060 TiBN Inorganic materials 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 28
- 239000000243 solution Substances 0.000 claims description 24
- 229910001510 metal chloride Inorganic materials 0.000 claims description 18
- 229910004356 Ti Raw Inorganic materials 0.000 claims description 14
- 238000006243 chemical reaction Methods 0.000 claims description 13
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 12
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 10
- 238000005121 nitriding Methods 0.000 claims description 10
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 7
- 230000001965 increasing effect Effects 0.000 claims description 7
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 4
- 238000006482 condensation reaction Methods 0.000 claims description 4
- 238000009489 vacuum treatment Methods 0.000 claims description 4
- 238000011065 in-situ storage Methods 0.000 claims description 3
- 230000001737 promoting effect Effects 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 62
- 238000000231 atomic layer deposition Methods 0.000 description 29
- 239000007788 liquid Substances 0.000 description 26
- 239000010936 titanium Substances 0.000 description 25
- 238000010926 purge Methods 0.000 description 23
- 239000000126 substance Substances 0.000 description 22
- 238000005229 chemical vapour deposition Methods 0.000 description 19
- 238000003860 storage Methods 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 7
- 238000001035 drying Methods 0.000 description 5
- 239000012528 membrane Substances 0.000 description 5
- 229910021529 ammonia Inorganic materials 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000003028 elevating effect Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000011534 incubation Methods 0.000 description 3
- 238000011068 loading method Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- HDZGCSFEDULWCS-UHFFFAOYSA-N monomethylhydrazine Chemical compound CNN HDZGCSFEDULWCS-UHFFFAOYSA-N 0.000 description 2
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- QRDJMFAGNINQFN-UHFFFAOYSA-N CC[Ti](N)CC Chemical compound CC[Ti](N)CC QRDJMFAGNINQFN-UHFFFAOYSA-N 0.000 description 1
- ZLOKVAIRQVQRGC-UHFFFAOYSA-N CN(C)[Ti] Chemical compound CN(C)[Ti] ZLOKVAIRQVQRGC-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 239000012487 rinsing solution Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- UBZYKBZMAMTNKW-UHFFFAOYSA-J titanium tetrabromide Chemical compound Br[Ti](Br)(Br)Br UBZYKBZMAMTNKW-UHFFFAOYSA-J 0.000 description 1
- NLLZTRMHNHVXJJ-UHFFFAOYSA-J titanium tetraiodide Chemical compound I[Ti](I)(I)I NLLZTRMHNHVXJJ-UHFFFAOYSA-J 0.000 description 1
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- 238000004876 x-ray fluorescence Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
- C23C28/042—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material including a refractory ceramic layer, e.g. refractory metal oxides, ZrO2, rare earth oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01C—AMMONIA; CYANOGEN; COMPOUNDS THEREOF
- C01C1/00—Ammonia; Compounds thereof
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G23/00—Compounds of titanium
- C01G23/02—Halides of titanium
- C01G23/022—Titanium tetrachloride
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Description
最初に、本発明に係る成膜方法の一実施形態について説明する
次に、実験例について説明する。
(実験例1)
ここでは、SiO2膜上にALDによりTiBN膜(TiN:BN=20:1)またはTiN膜を成膜するにあたり、成膜に先立ってウエット洗浄(SC1(アンモニア過水))による表面処理を行った場合と行わなかった場合で、膜の連続性を調査した。
ここでは、SiO2膜上にALDにより種々のBN量のTiBN膜(TiN:BN=10:1、20:1、60:1)またはTiN膜を成膜するにあたり、成膜に先立ってウエット洗浄(SC1(アンモニア過水))による表面処理を行った場合と行わなかった場合で、膜厚と膜厚の面内均一性(3σ)を評価した。膜厚はエリプソメータにより測定した。
ここでは、SiO2膜上にALDによりTiN膜を成膜するにあたり、成膜に先立ってウエット洗浄(SC1(アンモニア過水))による表面処理を行った場合と行わなかった場合でインキュベーションサイクルを評価した。膜厚は蛍光X線分析(XRF)により測定した。
次に、本発明の成膜方法に用いることができる成膜システムについて説明する。
(第1の例)
図12は、成膜システムの第1の例を示すブロック図である。
図12に示すように、本例の成膜システム100は、被処理体としてシリコン基体上に下地膜としてSiO2膜が形成された半導体ウエハ(以下、単にウエハと記す)に対し、ウエット洗浄により表面処理を行う表面処理装置101と、表面処理後のSiO2膜の表面にALDによりTiN膜を成膜する成膜装置102と、表面処理装置101と成膜装置102との間でウエハを収容したキャリアを搬送するキャリア搬送装置103と、これら各構成部を制御するための制御部104とを有している。
圧力:400〜800Pa
温度:400〜600℃
TiCl4ガス流量:50〜100sccm(mL/min)
NH3ガス流量:2000〜5000sccm(mL/min)
N2ガス流量:3000〜6000sccm(mL/min)
TiCl4ガスの供給時間(1回あたり):0.05〜0.1sec
NH3ガスの供給時間(1回あたり):0.3〜0.5sec
パージ時間(TiCl4後1回あたり):0.2〜0.4sec
パージ時間(NH3後1回あたり):0.3〜0.6sec
図17は、成膜システムの第2の例を示す概略図である。
本例の成膜システム200は、表面処理および成膜処理をいずれも真空処理で行う真空システムとして構成されている。
図19は、成膜システムの第3の例を示す断面図である。
本例の成膜システム300は、表面処理装置と成膜装置とが一体となっており、一つのチャンバー内で真空処理により表面処理と成膜処理を行うシステムとして構成されている。
以上、本発明の実施形態について説明したが、本発明は上記実施形態に限定されることなく種々変形可能である。例えば、上記実施形態では、下地膜がSiO2膜であり、成膜する膜がTiN膜、TiBN膜である場合を例示したが、本発明はこれに限定されない。例えば、下地膜としては、表面にOHを含む基が形成可能なものであればよく、Al2O3膜、HfO2膜、ZrO2膜、Al2O3・ZrO2膜等の他の酸化膜を用いることができるし、また、被処理体としてシリコンウエハ(シリコン基板)を用い、シリコンを直接下地として用いてもよい。この場合もOHを含む基はシラノール基である。また、成膜する膜としては、下地の表面OHと反応する原料ガスを用いて成膜することができる金属含有膜であればよく、他のTi含有膜であってもよく、Al,W、Cu等の他の金属を含有する膜であってもよい。
2;SiO2膜
3;被処理体
4;TiN膜またはTiBN膜
100,200,300;成膜システム
101,101′,201;表面処理装置
102,102′,202;成膜装置
103;キャリア搬送装置
104,208;制御部
203;真空搬送室
204;ロードロック室
205;真空搬送装置
W;半導体ウエハ(被処理体)
Claims (27)
- 被処理体の下地上にALDまたはCVDにより金属含有膜を成膜する成膜方法であって、
前記被処理体の前記下地の表面に、OおよびHを含有する流体を接触させて、前記下地の表面へのOHを含む基の生成を促進する表面処理を施す工程と、
前記表面処理が施された前記下地上に、前記OHを含む基と反応する金属塩化物からなる成膜原料と窒化ガスとを用いてALDまたはCVDにより金属含有膜として金属窒化膜を成膜する工程と
を有し、
前記表面処理を施す工程は、前記OおよびHを含む流体として、所定の水溶液を用い、該水溶液を接触させるウエット処理により、前記下地表面の、前記成膜原料である前記金属塩化物と反応するOH基の量を増加させて、前記窒化ガスと前記金属塩化物との反応により成膜される前記金属窒化膜のピンホールを抑制するように行われることを特徴とする成膜方法。 - 前記下地は、基体上に形成された下地膜であることを特徴とする請求項1に記載の成膜方法。
- 前記下地膜は酸化膜であることを特徴とする請求項2に記載の成膜方法。
- 前記下地膜はSiO2膜であり、前記OHを含む基はシラノール基であることを特徴とする請求項3に記載の成膜方法。
- 前記下地はシリコンであり、前記OHを含む基はシラノール基であることを特徴とする請求項1に記載の成膜方法。
- 前記金属含有膜は、Ti含有窒化膜であることを特徴とする請求項1から請求項5のいずれか1項に記載の成膜方法。
- 前記金属含有膜は、TiN膜またはTiBN膜であることを特徴とする請求項6に記載の成膜方法。
- 前記所定の水溶液として、アンモニア水と過酸化水素の混合水溶液、塩酸と過酸化水素の混合水溶液、過酸化水素の水溶液、および硫酸と過酸化水素の混合水溶液から選択されたものを用い、前記ウエット処理としてウエット洗浄処理を行うことを特徴とする請求項1から請求項7のいずれか1項に記載の成膜方法。
- 前記ウエット処理により前記表面処理を施す工程を行った後、2時間以内に前記成膜する工程を行うことを特徴とする請求項1から請求項8のいずれか1項に記載の成膜方法。
- 下地膜としてSiO2膜を有する被処理体の前記下地膜上にALDまたはCVDによりTi含有膜を成膜する成膜方法であって、
前記SiO2膜の表面に、プラズマ化していないOおよびHを含有する流体を接触させて、前記SiO2膜の表面へのシラノール基の生成を促進する表面処理を施す工程と、
前記表面処理が施された前記SiO2膜上に、前記シラノール基と反応するTi原料ガスを用いてALDまたはCVDによりTi含有膜を成膜する工程と
を有し、
前記表面処理を施す工程は、前記OおよびHを含む流体として、H 2 O 2 蒸気、O 3 +H 2 O蒸気、高温のH 2 O蒸気から選択された処理ガスを用い、該処理ガスを接触させるドライ処理により行われることを特徴とする成膜方法。 - 前記Ti原料ガスはTiCl4であり、前記シラノール基とTiCl4との縮合反応により前記Ti含有膜が成膜されることを特徴とする請求項10に記載の成膜方法。
- 前記Ti含有膜は、前記Ti原料ガスと窒化ガスとを用いて形成されるTiN膜であることを特徴とする請求項10または請求項11に記載の成膜方法。
- 前記Ti含有膜は、前記Ti原料ガスとB原料ガスと窒化ガスとを用いて形成されるTiBN膜であることを特徴とする請求項10または請求項11に記載の成膜方法。
- 前記窒化ガスは、NH3であることを特徴とする請求項12または請求項13に記載の成膜方法。
- 前記ドライ処理により前記表面処理を行った後、in−situで前記成膜処理を行うことを特徴とする請求項10から請求項14のいずれか1項に記載の成膜方法。
- 被処理体の下地上にALDまたはCVDにより金属含有膜を成膜する成膜システムであって、
前記被処理体の前記下地の表面に、OおよびHを含有する流体を接触させて、前記下地の表面へのOHを含む基の生成を促進する表面処理を施す表面処理装置と、
前記表面処理が施された前記下地上に、前記OHを含む基と反応する金属塩化物からなる成膜原料と窒化ガスとを用いてALDまたはCVDにより金属含有膜として金属窒化膜を成膜する成膜装置と
を具備し、
前記表面処理装置は、前記OおよびHを含む流体として、所定の水溶液を用い、該水溶液を接触させるウエット処理により、前記下地表面の、前記成膜原料である前記金属塩化物と反応するOH基の量を増加させて、前記窒化ガスと前記金属塩化物との反応により成膜される前記金属窒化膜のピンホールを抑制するように表面処理を行うことを特徴とする成膜システム。 - 前記表面処理装置は、前記所定の水溶液として、アンモニア水と過酸化水素の混合水溶液、塩酸と過酸化水素の混合水溶液、過酸化水素の水溶液、および硫酸と過酸化水素の混合水溶液から選択されたものを用い、前記ウエット処理としてウエット洗浄処理を行うことを特徴とする請求項16に記載の成膜システム。
- 前記表面処理装置および前記成膜装置を制御する制御部をさらに有し、前記制御部は、前記表面処理装置が前記ウエット処理により前記表面処理を施した後、2時間以内に前記成膜装置により成膜を行うように制御することを特徴とする請求項16または請求項17に記載の成膜システム。
- 下地膜としてSiO2膜を有する被処理体の前記下地膜上にALDまたはCVDによりTi含有膜を成膜する成膜システムであって、
前記SiO2膜の表面に、プラズマ化していないOおよびHを含有する流体を接触させて、前記SiO2膜の表面へのシラノール基の生成を促進する表面処理を施す表面処理装置と、
前記表面処理が施された前記SiO2膜上に、前記シラノール基と反応するTi原料ガスを用いてALDまたはCVDによりTi含有膜を成膜する成膜装置と
を具備し、
前記表面処理装置は、前記OおよびHを含む流体として、H 2 O 2 蒸気、O 3 +H 2 O蒸気、高温のH 2 O蒸気から選択された処理ガスを用い、該処理ガスを接触させるドライ処理により表面処理が行われることを特徴とする成膜システム。 - 前記Ti原料ガスはTiCl4であり、前記シラノール基とTiCl4との縮合反応により前記Ti含有膜が成膜されることを特徴とする請求項19に記載の成膜システム。
- 前記Ti含有膜は、前記Ti原料ガスと窒化ガスとを用いて形成されるTiN膜であることを特徴とする請求項19または請求項20に記載の成膜システム。
- 前記Ti含有膜は、前記Ti原料ガスとB原料ガスと窒化ガスとを用いて形成されるTiBN膜であることを特徴とする請求項19または請求項20に記載の成膜システム。
- 前記窒化ガスは、NH3であることを特徴とする請求項21または請求項22に記載の成膜システム。
- 前記表面処理装置と、前記成膜装置とは、真空処理で行われ、これらは真空に保持された真空搬送室に連結され、前記表面処理と前記成膜処理とが真空雰囲気のまま連続して行われることを特徴とする請求項19から請求項23のいずれか1項に記載の成膜システム。
- 真空に保持されるチャンバーと、前記チャンバー内で前記被処理体を載置する載置台と、前記チャンバー内に成膜用のガスを供給する機構と、前記表面処理を行う所定の処理ガスを供給する機構と、前記チャンバー内を排気する排気機構を有し、前記表面処理装置および前記成膜装置が一体化されて、前記チャンバー内で前記表面処理および前記成膜処理を行うことを特徴とする請求項19から請求項23のいずれか1項に記載の成膜システム。
- 被処理体の下地上にALDまたはCVDにより、OHを含む基と反応する金属塩化物からなる成膜原料と窒化ガスとを用いて金属含有膜として金属窒化膜を成膜するに先立って、前記下地の表面に、OおよびHを含有する所定の水溶液を接触させるウエット処理により、前記下地表面の、前記成膜原料である前記金属塩化物と反応するOH基の量を増加させて、前記窒化ガスと前記金属塩化物との反応により成膜される前記金属窒化膜のピンホールを抑制するように表面処理を施すことを特徴とする表面処理方法。
- 下地膜としてSiO2膜を有する被処理体の前記下地膜上にALDまたはCVDによりTi含有膜を成膜するに先立って、前記SiO2膜の表面に、プラズマ化していないOおよびHを含有する流体を接触させて、前記SiO2膜の表面へのシラノール基の生成を促進する表面処理を施し、
前記表面処理は、前記OおよびHを含む流体として、H 2 O 2 蒸気、O 3 +H 2 O蒸気、高温のH 2 O蒸気から選択された処理ガスを用い、該処理ガスを接触させるドライ処理により行われることを特徴とする表面処理方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016154425A JP6910118B2 (ja) | 2016-08-05 | 2016-08-05 | 成膜方法および成膜システム、ならびに表面処理方法 |
US15/667,817 US10392698B2 (en) | 2016-08-05 | 2017-08-03 | Film forming method, film forming system and surface processing method |
KR1020170098514A KR102023434B1 (ko) | 2016-08-05 | 2017-08-03 | 성막 방법 및 성막 시스템, 그리고 표면 처리 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016154425A JP6910118B2 (ja) | 2016-08-05 | 2016-08-05 | 成膜方法および成膜システム、ならびに表面処理方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018021244A JP2018021244A (ja) | 2018-02-08 |
JP6910118B2 true JP6910118B2 (ja) | 2021-07-28 |
Family
ID=61071919
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016154425A Active JP6910118B2 (ja) | 2016-08-05 | 2016-08-05 | 成膜方法および成膜システム、ならびに表面処理方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US10392698B2 (ja) |
JP (1) | JP6910118B2 (ja) |
KR (1) | KR102023434B1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019175911A (ja) * | 2018-03-27 | 2019-10-10 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置およびプログラム |
JP2022047768A (ja) | 2020-09-14 | 2022-03-25 | キオクシア株式会社 | 半導体装置の製造方法 |
JP7324740B2 (ja) * | 2020-11-25 | 2023-08-10 | 株式会社Kokusai Electric | 基板処理方法、プログラム、基板処理装置及び半導体装置の製造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3138892B2 (ja) | 1992-12-17 | 2001-02-26 | 東京エレクトロン株式会社 | 薄膜形成方法及びその装置 |
JP2001053023A (ja) * | 1999-08-11 | 2001-02-23 | Tokyo Electron Ltd | 半導体装置の製造方法及び製造装置 |
JP4434519B2 (ja) * | 2001-06-29 | 2010-03-17 | 株式会社ルネサステクノロジ | 半導体装置の製造法 |
JP4178776B2 (ja) | 2001-09-03 | 2008-11-12 | 東京エレクトロン株式会社 | 成膜方法 |
WO2003076678A2 (en) * | 2002-03-08 | 2003-09-18 | Sundew Technologies, Llc | Ald method and apparatus |
KR20040042258A (ko) * | 2002-11-13 | 2004-05-20 | 주식회사 하이닉스반도체 | 원자층증착을 이용한 반도체 소자의 박막 형성방법 |
KR100641060B1 (ko) * | 2005-07-22 | 2006-11-01 | 삼성전자주식회사 | 게이트 구조물의 제조 방법 및 이를 이용하는 반도체장치의 제조 방법 |
EP1949416A2 (en) * | 2005-09-23 | 2008-07-30 | Nxp B.V. | A method of fabricating a structure for a semiconductor device |
US9472637B2 (en) | 2010-01-07 | 2016-10-18 | Hitachi Kokusai Electric Inc. | Semiconductor device having electrode made of high work function material and method of manufacturing the same |
JP6117588B2 (ja) * | 2012-12-12 | 2017-04-19 | 東京エレクトロン株式会社 | Cu配線の形成方法 |
-
2016
- 2016-08-05 JP JP2016154425A patent/JP6910118B2/ja active Active
-
2017
- 2017-08-03 US US15/667,817 patent/US10392698B2/en active Active
- 2017-08-03 KR KR1020170098514A patent/KR102023434B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
JP2018021244A (ja) | 2018-02-08 |
KR102023434B1 (ko) | 2019-09-23 |
US10392698B2 (en) | 2019-08-27 |
KR20180016304A (ko) | 2018-02-14 |
US20180037989A1 (en) | 2018-02-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101804003B1 (ko) | 성막 방법 | |
JP5222652B2 (ja) | 基板処理装置及び半導体装置の製造方法 | |
JP5774822B2 (ja) | 半導体デバイスの製造方法及び基板処理装置 | |
KR100447284B1 (ko) | 화학기상증착 챔버의 세정 방법 | |
JP5787488B2 (ja) | 半導体装置の製造方法及び基板処理装置 | |
KR101233031B1 (ko) | 반도체 장치의 제조 방법과 기판 처리 방법 및 기판 처리 장치 | |
JP6851173B2 (ja) | 成膜装置および成膜方法 | |
KR102651019B1 (ko) | 성막 방법 및 성막 장치 | |
JP2011168881A (ja) | 半導体装置の製造方法及び基板処理装置 | |
JP4694209B2 (ja) | 基板処理装置及び半導体装置の製造方法 | |
JP6910118B2 (ja) | 成膜方法および成膜システム、ならびに表面処理方法 | |
JP2010206050A (ja) | 半導体装置の製造方法及び基板処理装置 | |
KR102333928B1 (ko) | 기판 처리 장치, 배기관의 코팅 방법 및 기판 처리 방법 | |
JP4943536B2 (ja) | 半導体装置の製造方法、基板処理方法及び基板処理装置 | |
KR101862907B1 (ko) | 성막 방법 | |
KR100989028B1 (ko) | 반도체 장치의 제조 방법 및 기판 처리 장치 | |
JP2011058031A (ja) | 半導体装置の製造方法及び基板処理装置 | |
JP2013145796A (ja) | TiSiN膜の成膜方法および記憶媒体 | |
JP5568342B2 (ja) | 半導体装置の製造方法、基板処理方法および基板処理システム | |
WO2013105389A1 (ja) | TiSiN膜の成膜方法および記憶媒体 | |
JP2017212320A (ja) | 酸化チタン膜の形成方法および形成システム、ならびにコンタクト構造の形成方法 | |
WO2020235596A1 (ja) | 成膜方法および成膜装置、ならびに処理容器のクリーニング方法 | |
WO2012096293A1 (ja) | TiSiN膜の成膜方法および記憶媒体 | |
KR20230146453A (ko) | 성막 방법 및 처리 장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170224 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20170224 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190404 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20200120 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200204 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200326 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200609 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200728 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20201208 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210202 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20210608 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20210706 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6910118 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |