JP7279605B2 - 成膜装置及び成膜装置の運用方法 - Google Patents
成膜装置及び成膜装置の運用方法 Download PDFInfo
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Description
内部を外側の大気雰囲気に開放する大気開放が可能な真空容器の当該内部にて、載置された前記基板を公転させるために回転する回転テーブルと、
前記原料ガスを前記回転テーブル上の第1の領域に吐出する原料ガス吐出口と、
前記第1の領域に対して前記回転テーブルの周方向に離れた第2の領域に、前記第1の反応ガスと、前記大気開放を行うときの当該真空容器内に残留する塩素と大気との反応による第2の反応生成物の生成を防ぐために当該塩素と反応して第3の反応生成物を生成する第2の反応ガスとを、各々供給する反応ガス供給部と、
前記膜を成膜するときに前記第1の領域の雰囲気と第2の領域の雰囲気とを分離する雰囲気分離部と、
前記膜を成膜するときに前記第1の領域の雰囲気、前記第2の領域の雰囲気を夫々専ら排気する第1の排気口、第2の排気口と、
前記回転テーブルの回転中に前記第1の領域、第2の領域への前記原料ガス、前記第1の反応ガスの供給を夫々行い、前記基板に前記膜を成膜する成膜ステップと、前記成膜ステップの後に前記第1の領域への前記原料ガスの供給を停止した状態で、前記第1の排気口及び前記第2の排気口のうち少なくとも前記第1の排気口からの排気を行うと共に、前記第2の領域に前記第2の反応ガスを供給して当該第2の領域から当該第1の排気口へ向かう当該第2の反応ガスの気流を形成する前記大気開放の前処理ステップと、を実行する制御信号を出力する制御部と、
を備えた。
また真空容器11における回転テーブル12の外側の下方であって、プラズマ形成ユニット3Bの外側には第2の排気口51が開口しており、この排気口51は真空排気部50に接続されている。即ち第2の排気口51は、囲繞領域RAに対して、回転テーブル12の周方向に離れて設けられていると言える。
ところで塩素と塩素以外の化合物、例えばDCSガスを原料ガスとして用いる成膜装置では、真空容器11の内面、特にガス給排気ユニット2の下面のガス吐出口21の周囲にClが付着残留していることがある。そしてメンテナンスのために真空容器11を大気開放したときに成膜装置の外部の大気に含まれる水分と真空容器11内に付着しているClとが反応し、例えば第2の反応生成物であるHClが生成されることがある。このような成膜装置においては、ガス吸排気ユニット2の下面などがHClにより腐食してしまうおそれがある。
これにより図7に示すように真空容器11内に供給されたプラズマ化したNH3ガスは、各プラズマ形成ユニット3A~3Cの下方からガス給排気ユニット2に向かって流れる。なお図7では、ガス給排気ユニット2のガス吐出口21及びパージガス吐出口23から吐出されるパージガスの流れを示す矢印の記載を省略している。
その後、例えばプラズマ化したNH3ガスを10分間供給した後、各プラズマ形成ユニット3A~3Cに供給するマイクロ波を停止すると共に、NH3ガスの供給を停止する。さらに回転テーブル12を停止させ、さらに真空容器11内の温度を40℃に降温させる。
図5に戻って、このように前処理を実行した後(ステップS3)、例えば真空容器11内に設けられた温度検出部により、真空容器内の温度が予め設定された温度を下回っていることを確認する。さらに例えばガス給排気ユニット2及び各プラズマ形成ユニット3A~3Cから真空容器11内にパージガスを供給し、真空容器11内に真空容器11内の圧力を大気圧まで上昇させる(ステップS5)。その後真空容器11を真空搬送室から切り離し、天板11Bを容器本体11Aから取り外して、真空容器11を大気開放し、成膜装置の部材の交換や付着物の除去などのメンテナンスを行う。
また成膜処理に用いる原料ガスに含まれるCl以外の元素は、Siに限らず、例えばチタンであってもよく、Cl以外の元素を含む膜として、そのように例えばチタンを含む膜を成膜することができる。なおCl以外の元素を含む膜とは、Cl以外の元素を膜の主成分として含む膜であり、膜の不純物として塩素を含むという意味ではない。
また本開示は、前処理工程において、回転テーブル12を回転させない場合にもプラズマ化したNH3ガスは、拡散により吸着領域R0に侵入することができるが、回転テーブル12を回転させることで回転テーブル12の回転によりプラズマ化したNH3ガスを吸着領域R0に送り込むことができる。従ってガス給排気ユニット2の下面にプラズマ化されたNH3ガスが供給されやすくなる。
また本開示にかかる成膜装置は、回転テーブル12の径方向に沿って分離ガスを吐出する雰囲気分離部を回転テーブル12の周方向に2つ設けて第1の領域と、第2の領域とを分離し、第1の領域と第2の領域とに夫々第1の排気口と、第2の排気口と、を設けた成膜装置であってもよい。
11 真空容器
12 回転テーブル
21 ガス吐出孔
22 第1の排気口
23 パージガス吐出口
51 第2の排気口
3A~3C プラズマ形成ユニット
RA 囲繞領域
W ウエハ
Claims (10)
- 塩素と塩素以外の元素とにより構成される化合物である原料ガスと、前記原料ガスと反応して前記塩素以外の元素を含む第1の反応生成物を生成する第1の反応ガスと、を基板に順番に供給するサイクルを複数回行い、第1の反応生成物の膜を成膜する成膜装置において、
内部を外側の大気雰囲気に開放する大気開放が可能な真空容器の当該内部にて、載置された前記基板を公転させるために回転する回転テーブルと、
前記原料ガスを前記回転テーブル上の第1の領域に吐出する原料ガス吐出口と、
前記第1の領域に対して前記回転テーブルの周方向に離れた第2の領域に、前記第1の反応ガスと、前記大気開放を行うときの当該真空容器内に残留する塩素と大気との反応による第2の反応生成物の生成を防ぐために当該塩素と反応して第3の反応生成物を生成する第2の反応ガスとを、各々供給する反応ガス供給部と、
前記膜を成膜するときに前記第1の領域の雰囲気と第2の領域の雰囲気とを分離する雰囲気分離部と、
前記膜を成膜するときに前記第1の領域の雰囲気、前記第2の領域の雰囲気を夫々専ら排気する第1の排気口、第2の排気口と、
前記回転テーブルの回転中に前記第1の領域、第2の領域への前記原料ガス、前記第1の反応ガスの供給を夫々行い、前記基板に前記膜を成膜する成膜ステップと、前記成膜ステップの後に前記第1の領域への前記原料ガスの供給を停止した状態で、前記第1の排気口及び前記第2の排気口のうち少なくとも前記第1の排気口からの排気を行うと共に、前記第2の領域に前記第2の反応ガスを供給して当該第2の領域から当該第1の排気口へ向かう当該第2の反応ガスの気流を形成する前記大気開放の前処理ステップと、を実行する制御信号を出力する制御部と、
を備えた成膜装置。 - 前記第1の排気口は、前記第1の領域を囲む囲繞領域の内縁を排気すると共に前記雰囲気分離部を構成し、
前記雰囲気分離部は、前記囲繞領域の外縁にパージガスの吐出を行うパージガス吐出口を備え、
前記第2の排気口は、前記囲繞領域に対して前記回転テーブルの周方向に離れて設けられる請求項1記載の成膜装置。 - 前記第1の反応ガス及び第2の反応ガスはアンモニアガスであり、前記塩素以外の元素はシリコンであり、前記第1の反応生成物の膜はシリコン窒化膜である請求項1または2に記載の成膜装置。
- 前記第2の領域に供給された前記第1の反応ガス及び前記第2の反応ガスをプラズマ化するプラズマ化機構が設けられ、前記第1の反応ガス及び前記第2の反応ガスは、プラズマ化されたアンモニアガスである請求項3記載の成膜装置。
- 前記前処理ステップにおける前記第2の排気口による排気流量は、前記成膜ステップにおける前記第2の排気口による排気流量よりも小さい請求項1ないし4のいずれか一つに記載の成膜装置。
- 前記前処理ステップにおいて、前記第2の排気口からの排気を停止する請求項5記載の成膜装置。
- 前記前処理ステップは、前記第1の排気口からの排気及び前記第2の領域への前記第2の反応ガスの供給を行うと共に前記回転テーブルを回転させる請求項1ないし6のいずれか一つに記載の成膜装置。
- 前記第1の排気口は、前記第1の領域を囲む囲繞領域の内縁を排気すると共に前記雰囲気分離部を構成し、
前記雰囲気分離部は、前記囲繞領域の外縁にパージガスの吐出を行うパージガス吐出口を備え、
前記前処理ステップにおける、前記パージガス吐出口から供給されるパージガスの流量は、前記成膜ステップにおける前記パージガス吐出口から供給されるパージガスの流量よりも小さい請求項1ないし7のいずれか一つに記載の成膜装置。 - 前記原料ガス吐出口からの前記第1の領域へのパージガスの吐出と、前記第2の領域へのパージガスの吐出と、を行うパージガス供給機構が設けられ、
前記制御部は、前記前処理ステップの後、前記第1の領域及び前記第2の領域へ各々前記パージガスが吐出されるように制御信号を出力する請求項1ないし7のいずれか一項に記載の成膜装置。 - 塩素と塩素以外の元素とにより構成される化合物である原料ガスと、前記原料ガスと反応して前記塩素以外の元素を含む第1の反応生成物を生成する第1の反応ガスと、を基板に順番に供給するサイクルを複数回行い、第1の反応生成物の膜を成膜する成膜装置の運用方法において、
内部を外側の大気雰囲気に開放する大気開放が可能な真空容器の当該内部にて回転テーブルを回転させて、載置された前記基板を公転させる工程と、
原料ガス吐出口から前記原料ガスを前記回転テーブル上の第1の領域に吐出する工程と、
前記当該第1の領域の外側に当該原料ガスが供給されることを抑制するために前記回転テーブル上に設けられた第1の排気口により前記第1の領域を囲む囲繞領域の内縁を排気する工程と、
前記当該第1の領域の外側に当該原料ガスが供給されることを抑制するために前記回転テーブル上に設けられたパージガス吐出口から前記囲繞領域の外縁にパージガスを吐出する工程と、
前記囲繞領域に対して前記回転テーブルの周方向に離れた第2の領域に、前記第1の反応ガスを供給する工程と、
前記大気開放が行われるときにおける当該真空容器内に残留する前記塩素と大気との反応による第2の反応生成物の生成を防ぐために、当該塩素と反応して第3の反応生成物を生成するための第2の反応ガスを前記第2の領域に供給する工程と、
前記囲繞領域に対して前記回転テーブルの周方向に離れて設けられる第2の排気口から前記第2の領域に供給された前記第1の反応ガスを排気する工程と、
前記回転テーブルの回転中に前記第1の領域、第2の領域への前記原料ガス、前記第1の反応ガスの供給を夫々行うと共に、前記第1の排気口、前記第2の排気口から各々排気を行い、前記基板に前記第1の反応生成物の膜を成膜する成膜工程と、
前記成膜工程の後に前記第1の領域への前記原料ガスの供給を停止した状態で、前記第1の排気口及び前記第2の排気口のうち少なくとも前記第1の排気口からの排気を行うと共に、前記第2の領域に前記第2の反応ガスを供給して当該第2の領域から当該第1の排気口へ向かう第2の反応ガスの気流を形成する前記大気開放の前処理工程と、を備える成膜装置の運用方法
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