JP2008190046A - 成膜装置および成膜方法 - Google Patents
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- JP2008190046A JP2008190046A JP2008089537A JP2008089537A JP2008190046A JP 2008190046 A JP2008190046 A JP 2008190046A JP 2008089537 A JP2008089537 A JP 2008089537A JP 2008089537 A JP2008089537 A JP 2008089537A JP 2008190046 A JP2008190046 A JP 2008190046A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45519—Inert gas curtains
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
Abstract
【解決手段】基板Wを収容するチャンバー11と、チャンバー11内で複数の基板Wを平面的に支持する基板支持部材12と、チャンバー11内に設けられ、TiCl4を吐出する第1の処理ガス吐出ノズル20と、NH3を吐出する第2の処理ガス吐出ノズル21と、チャンバー11内にクリーニングガスを吐出するクリーニングガス吐出手段31,35,46,47,48と、基板支持部材12を回転させる回転機構14と、基板Wを加熱するヒーター16とを具備し、基板支持部材12を回転させながら、基板W上に、Tiの単原子層と、Nの単原子層とを交互に形成し、クリーニングガスにより前記チャンバー内をクリーニングする。
【選択図】図1
Description
前記チャンバー内で複数の基板を平面的に支持する基板支持部材と、
前記チャンバー内に設けられ、第1の処理ガスを吐出する第1の処理ガス吐出部と、
前記チャンバー内の第1の処理ガス吐出部とは異なる位置に設けられ、第2の処理ガスを吐出する第2の処理ガス吐出部と、
前記チャンバー内にクリーニングガスを吐出するクリーニングガス吐出手段と、
前記基板支持部材を回転させる回転機構と、
前記基板を加熱する加熱手段と
を具備し、
前記基板支持部材を回転させながら、基板上に、第1の処理ガスおよび第2の処理ガスを交互に吸着させ、クリーニングガスにより前記チャンバー内をクリーニングすることを特徴とする成膜装置を提供する。
前記チャンバー内に第1の処理ガスを吐出する第1の処理ガス吐出部と第2の処理ガスを吐出する第2の処理ガス吐出部とを配置し、
前記基板支持部材を回転させながら、基板上に、第1の処理ガスおよび第2の処理ガスを交互に吸着させ、
膜形成終了後、クリーニングガス供給手段により前記チャンバー内にクリーニングガスを供給してクリーニングを行うことを特徴とする成膜方法を提供する。
TiCl4ガス流量:1〜50sccm(0.001〜0.05L/min)、好ましくは5〜20sccm(0.005〜0.02L/min)
Arガス(キャリアガス)流量:10〜100sccm(0.01〜0.1L/min)、TiCl4ガスが低流量の場合にはキャリアガスは用いなくてもよい
NH3ガス流量:50〜1000sccm(0.05〜1L/min)、好ましくは50〜500sccm(0.05〜0.5L/min)
パージガス流量:100〜1000sccm(0.1〜1L/min)
チャンバー内圧力:100mTorr〜5Torr(13.3Pa〜665Pa)、好ましくは100mTorr〜1Torr(13.3Pa〜133Pa)
加熱温度:300〜700℃、好ましくは400〜600℃
ClF3ガス流量:100〜500sccm(0.1〜0.5L/min)、好ましくは200〜300sccm(0.2〜0.3L/min)
チャンバー内圧力:1〜10Torr(133〜1330Pa)、好ましくは1〜5Torr(133〜665Pa)
クリーニング温度:200〜500℃、好ましくは200〜300℃
11;チャンバー
12,12’;ウエハ支持部材
12a;ウエハ支持部
13;回転軸
14;モーター
16,16’;ヒーター
20,21;処理ガス吐出ノズル
22;パージガス吐出ノズル
30;ガス供給機構
25,70;排気口
26,71;排気管
28;排気装置
52;ウエハテーブル
53;モーター
60,61;シャワーヘッド
W;半導体ウエハ
Claims (11)
- 基板を収容するチャンバーと、
前記チャンバー内で複数の基板を平面的に支持する基板支持部材と、
前記チャンバー内に設けられ、第1の処理ガスを吐出する第1の処理ガス吐出部と、
前記チャンバー内の第1の処理ガス吐出部とは異なる位置に設けられ、第2の処理ガスを吐出する第2の処理ガス吐出部と、
前記チャンバー内にクリーニングガスを吐出するクリーニングガス吐出手段と、
前記基板支持部材を回転させる回転機構と、
前記基板を加熱する加熱手段と
を具備し、
前記基板支持部材を回転させながら、基板上に、第1の処理ガスおよび第2の処理ガスを交互に吸着させ、クリーニングガスにより前記チャンバー内をクリーニングすることを特徴とする成膜装置。 - 前記クリーニングガス吐出手段は、クリーニングガス供給源と、前記クリーニングガス供給源から前記第1の処理ガス吐出部および/または前記第2の処理ガス吐出部に接続される配管とを有し、前記第1の処理ガス吐出部および/または前記第2の処理ガス吐出部からクリーニングガスを吐出することを特徴とする請求項1に記載の成膜装置。
- 前記第1の処理ガス吐出部と前記第2の処理ガス吐出部との間にパージガスを吐出するパージガス吐出部を有し、基板上に、第1の処理ガスおよび第2の処理ガスをパージガスを挟んで交互に走査させ、パージガスにより前記第1の処理ガスおよび第2の処理ガスを分離することを特徴とする請求項1に記載の成膜装置。
- 前記クリーニングガス吐出手段は、クリーニングガス供給源と、前記クリーニングガス供給源から前記第1の処理ガス吐出部および/または前記第2の処理ガス吐出部および/またはパージガス吐出部に接続される配管とを有し、前記第1の処理ガス吐出部および/または前記第2の処理ガス吐出部および/またはパージガス吐出部からクリーニングガスを吐出することを特徴とする請求項3に記載の成膜装置。
- 前記クリーニングガスは、ClF3ガスであることを特徴とする請求項1から請求項4のいずれか1項に記載の成膜装置。
- 前記第1の処理ガスは、Al、Zr、Ti、Ta、Si、WおよびRuのうちいずれか1種を含み、前記第2の処理ガスはNまたはOを含むことを特徴とする請求項1から請求項5のいずれか1項に記載の成膜装置。
- Al2O3、ZrO2、TiN、TaN、SiO2、SiN、SiON、SiOF、WN、WSiおよびRuO2のうちいずれか1種を成膜することを特徴とする請求項1から請求項5のいずれか1項に記載の成膜装置。
- チャンバー内で複数の基板を基板支持部材に平面的に配置された状態で支持させ、
前記チャンバー内に第1の処理ガスを吐出する第1の処理ガス吐出部と第2の処理ガスを吐出する第2の処理ガス吐出部とを配置し、
前記基板支持部材を回転させながら、基板上に、第1の処理ガスおよび第2の処理ガスを交互に吸着させ、
膜形成終了後、クリーニングガス供給手段により前記チャンバー内にクリーニングガスを供給してクリーニングを行うことを特徴とする成膜方法。 - 前記クリーニングガスは、ClF3ガスであることを特徴とする請求項8に記載の成膜方法。
- 前記第1の処理ガスは、Al、Zr、Ti、Ta、Si、WおよびRuのうちいずれか1種を含み、前記第2の処理ガスはNまたはOを含むことを特徴とする請求項8または請求項9に記載の成膜方法。
- Al2O3、ZrO2、TiN、TaN、SiO2、SiN、SiON、SiOF、WN、WSiおよびRuO2のうちいずれか1種を成膜することを特徴とする請求項8または請求項9に記載の成膜方法。
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WO2013146278A1 (ja) * | 2012-03-30 | 2013-10-03 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法及び基板処理装置 |
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Also Published As
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US6576062B2 (en) | 2003-06-10 |
JP2008240154A (ja) | 2008-10-09 |
JP4817267B2 (ja) | 2011-11-16 |
US20010007244A1 (en) | 2001-07-12 |
JP4817268B2 (ja) | 2011-11-16 |
JP4817266B2 (ja) | 2011-11-16 |
JP2008190045A (ja) | 2008-08-21 |
JP2008208462A (ja) | 2008-09-11 |
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