JP6330630B2 - 成膜装置 - Google Patents
成膜装置 Download PDFInfo
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- JP6330630B2 JP6330630B2 JP2014230907A JP2014230907A JP6330630B2 JP 6330630 B2 JP6330630 B2 JP 6330630B2 JP 2014230907 A JP2014230907 A JP 2014230907A JP 2014230907 A JP2014230907 A JP 2014230907A JP 6330630 B2 JP6330630 B2 JP 6330630B2
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
Description
真空容器内に配置され、その一面側に設けられる載置領域に基板を載置して公転させるための回転テーブルと、
前記回転テーブルの一面側におけるガス供給領域に前記処理ガスを供給し、前記公転により当該ガス供給領域を複数回繰り返し通過する基板に成膜を行うための処理ガス供給機構と、
前記回転テーブルの他面側に設けられ、当該回転テーブルの回転方向に沿って回転自在な第1の歯車と、
前記第1の歯車に噛合し、前記載置領域と共に公転するように設けられ、自転することによって基板が自転するように当該載置領域を回転させる遊星歯車からなる第2の歯車と、
前記第1の歯車を回転させて、前記基板の自転速度を調整するための回転駆動部と、
前記第2の歯車が設けられ、前記載置領域を回転させるための自転軸と、
前記自転軸を支持する軸受けと、
前記軸受けを前記回転テーブルに支持する支持部材と、
を備え
前記支持部材は、前記自転軸に対して回転テーブルの回転方向に離れて設けられた支柱と、
前記回転テーブルの他面から離れて設けられ、前記支柱と前記軸受けを接続する接続部と、を備え、
前記接続部の上方において、前記自転軸及び支柱の移動路の内側、外側に夫々基板を加熱する加熱機構が設けられることを特徴とする。
本発明に関連した評価試験1について説明する。この評価試験1の説明では、回転テーブル2の凹部23に載置されたウエハWについて、成膜処理開始時において回転テーブル2の直径に一致するウエハWの直径をYラインと記載する。従って、Yラインは図8中に矢印A1〜A5として示した領域である。そして、このYラインに対して直交するウエハWの直径をXラインと記載する。
1 成膜装置
11 真空容器
2 回転テーブル
27 リング部材
33 ヒーター
41 自転軸
42 遊星歯車
44 公転用回転駆動部
51 第1の歯車
55 自転用回転駆動部
100 制御部
Claims (2)
- 処理ガスを基板に供給して薄膜を得る成膜装置であって、
真空容器内に配置され、その一面側に設けられる載置領域に基板を載置して公転させるための回転テーブルと、
前記回転テーブルの一面側におけるガス供給領域に前記処理ガスを供給し、前記公転により当該ガス供給領域を複数回繰り返し通過する基板に成膜を行うための処理ガス供給機構と、
前記回転テーブルの他面側に設けられ、当該回転テーブルの回転方向に沿って回転自在な第1の歯車と、
前記第1の歯車に噛合し、前記載置領域と共に公転するように設けられ、自転することによって基板が自転するように当該載置領域を回転させる遊星歯車からなる第2の歯車と、
前記第1の歯車を回転させて、前記基板の自転速度を調整するための回転駆動部と、
前記第2の歯車が設けられ、前記載置領域を回転させるための自転軸と、
前記自転軸を支持する軸受けと、
前記軸受けを前記回転テーブルに支持する支持部材と、
を備え
前記支持部材は、前記自転軸に対して回転テーブルの回転方向に離れて設けられた支柱と、
前記回転テーブルの他面から離れて設けられ、前記支柱と前記軸受けを接続する接続部と、を備え、
前記接続部の上方において、前記自転軸及び支柱の移動路の内側、外側に夫々基板を加熱する加熱機構が設けられることを特徴とする成膜装置。 - 前記第1の歯車及び前記第2の歯車は、回転テーブルの一面側から区画された区画領域に設けられ、
当該区画領域にガスを供給するガス供給部と、当該区画領域を排気する排気路と、が設けられたことを特徴とする請求項1記載の成膜装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014230907A JP6330630B2 (ja) | 2014-11-13 | 2014-11-13 | 成膜装置 |
KR1020150156584A KR101928134B1 (ko) | 2014-11-13 | 2015-11-09 | 성막 장치 |
US14/936,759 US10683573B2 (en) | 2014-11-13 | 2015-11-10 | Film forming apparatus |
TW104137106A TWI609987B (zh) | 2014-11-13 | 2015-11-11 | 成膜裝置 |
CN201510778729.6A CN105603391B (zh) | 2014-11-13 | 2015-11-13 | 成膜装置 |
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JP2014230907A JP6330630B2 (ja) | 2014-11-13 | 2014-11-13 | 成膜装置 |
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JP2016096220A JP2016096220A (ja) | 2016-05-26 |
JP6330630B2 true JP6330630B2 (ja) | 2018-05-30 |
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US (1) | US10683573B2 (ja) |
JP (1) | JP6330630B2 (ja) |
KR (1) | KR101928134B1 (ja) |
CN (1) | CN105603391B (ja) |
TW (1) | TWI609987B (ja) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6330623B2 (ja) * | 2014-10-31 | 2018-05-30 | 東京エレクトロン株式会社 | 成膜装置、成膜方法及び記憶媒体 |
KR102372893B1 (ko) * | 2014-12-04 | 2022-03-10 | 삼성전자주식회사 | 발광 소자 제조용 화학 기상 증착 장치 |
KR102508025B1 (ko) * | 2015-05-11 | 2023-03-10 | 주성엔지니어링(주) | 공정챔버 내부에 배치되는 기판 처리장치 및 그 작동방법 |
JP6447393B2 (ja) * | 2015-07-06 | 2019-01-09 | 東京エレクトロン株式会社 | 成膜処理装置、成膜処理方法及び記憶媒体 |
JP6507953B2 (ja) * | 2015-09-08 | 2019-05-08 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
US10428425B2 (en) * | 2016-01-26 | 2019-10-01 | Tokyo Electron Limited | Film deposition apparatus, method of depositing film, and non-transitory computer-readable recording medium |
DE102016110788A1 (de) * | 2016-06-13 | 2017-12-14 | Aixtron Se | Vorrichtung und Verfahren zur Herstellung von optoelektronischen Bauelementen, insbesondere von Multi-Junction-Solarzellen im Durchlaufverfahren |
KR20180024520A (ko) * | 2016-08-30 | 2018-03-08 | 주성엔지니어링(주) | 기판 처리 장치 |
KR101832253B1 (ko) * | 2016-11-24 | 2018-02-26 | 주식회사 한화 | 기판 처리 장치 |
US11339477B2 (en) * | 2016-11-30 | 2022-05-24 | Jiangsu Favored Nanotechnology Co., LTD | Plasma polymerization coating apparatus and process |
CN106756888B (zh) | 2016-11-30 | 2018-07-13 | 江苏菲沃泰纳米科技有限公司 | 一种纳米镀膜设备旋转货架装置 |
US10522387B2 (en) * | 2016-12-15 | 2019-12-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and multi-wafer deposition apparatus |
JP6777055B2 (ja) | 2017-01-11 | 2020-10-28 | 東京エレクトロン株式会社 | 基板処理装置 |
JP6763321B2 (ja) | 2017-03-01 | 2020-09-30 | 東京エレクトロン株式会社 | 自転検出用冶具、基板処理装置及び基板処理装置の運転方法 |
JP6922408B2 (ja) * | 2017-05-18 | 2021-08-18 | 東京エレクトロン株式会社 | 基板処理装置 |
JP6935741B2 (ja) * | 2017-12-20 | 2021-09-15 | 東京エレクトロン株式会社 | 成膜装置 |
US10109517B1 (en) | 2018-01-10 | 2018-10-23 | Lam Research Corporation | Rotational indexer with additional rotational axes |
DE202018100363U1 (de) | 2018-01-23 | 2019-04-24 | Aixtron Se | Vorrichtung zum Verbinden eines Suszeptors mit einer Antriebswelle |
JP2019137892A (ja) * | 2018-02-09 | 2019-08-22 | 漢民科技股▲分▼有限公司 | 成膜装置 |
JP7296732B2 (ja) * | 2019-01-18 | 2023-06-23 | 東京エレクトロン株式会社 | 基板処理方法 |
US10998209B2 (en) | 2019-05-31 | 2021-05-04 | Applied Materials, Inc. | Substrate processing platforms including multiple processing chambers |
JP7209598B2 (ja) | 2019-07-26 | 2023-01-20 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
CN110656319A (zh) * | 2019-11-06 | 2020-01-07 | 錼创显示科技股份有限公司 | 加热装置及化学气相沉积系统 |
CN110846634B (zh) * | 2019-11-25 | 2022-03-29 | 中国科学院光电技术研究所 | 一种行星转动装置及能实现大批量生产的镀膜设备 |
JP7257941B2 (ja) * | 2019-11-28 | 2023-04-14 | 東京エレクトロン株式会社 | 自転駆動機構及び自転駆動方法、並びにこれらを用いた基板処理装置及び基板処理方法 |
JP7382836B2 (ja) | 2020-01-15 | 2023-11-17 | 東京エレクトロン株式会社 | 基板処理装置及び回転駆動方法 |
JP7325345B2 (ja) | 2020-01-15 | 2023-08-14 | 東京エレクトロン株式会社 | 基板処理装置 |
JP7370270B2 (ja) | 2020-02-07 | 2023-10-27 | 東京エレクトロン株式会社 | 基板保持機構及び基板処理装置 |
US11817331B2 (en) | 2020-07-27 | 2023-11-14 | Applied Materials, Inc. | Substrate holder replacement with protective disk during pasting process |
US11749542B2 (en) | 2020-07-27 | 2023-09-05 | Applied Materials, Inc. | Apparatus, system, and method for non-contact temperature monitoring of substrate supports |
US11600507B2 (en) | 2020-09-09 | 2023-03-07 | Applied Materials, Inc. | Pedestal assembly for a substrate processing chamber |
US11610799B2 (en) | 2020-09-18 | 2023-03-21 | Applied Materials, Inc. | Electrostatic chuck having a heating and chucking capabilities |
JP2022071355A (ja) * | 2020-10-28 | 2022-05-16 | 東京エレクトロン株式会社 | 基板処理装置 |
US11674227B2 (en) | 2021-02-03 | 2023-06-13 | Applied Materials, Inc. | Symmetric pump down mini-volume with laminar flow cavity gas injection for high and low pressure |
CN115943485A (zh) * | 2021-04-27 | 2023-04-07 | 朗姆研究公司 | 具有晶片定心功能的旋转转位器 |
CN115110038B (zh) * | 2022-06-29 | 2024-01-12 | 北海惠科半导体科技有限公司 | 蒸发镀膜装置和镀膜方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4284033A (en) * | 1979-10-31 | 1981-08-18 | Rca Corporation | Means to orbit and rotate target wafers supported on planet member |
JPH04302138A (ja) * | 1991-03-29 | 1992-10-26 | Furukawa Electric Co Ltd:The | 半導体ウエハの気相成長装置 |
US5795448A (en) * | 1995-12-08 | 1998-08-18 | Sony Corporation | Magnetic device for rotating a substrate |
DE19811873A1 (de) * | 1997-03-19 | 1998-09-24 | Materials Research Corp | Verfahren und Vorrichtung zum Variieren der Substratgeschwindigkeit während eines Sputterprozesses |
JP2001168034A (ja) * | 1999-12-07 | 2001-06-22 | Sony Corp | 化合物半導体結晶成長装置及び化合物半導体層の成膜方法 |
JP4817210B2 (ja) * | 2000-01-06 | 2011-11-16 | 東京エレクトロン株式会社 | 成膜装置および成膜方法 |
US6576062B2 (en) * | 2000-01-06 | 2003-06-10 | Tokyo Electron Limited | Film forming apparatus and film forming method |
JP4537566B2 (ja) * | 2000-12-07 | 2010-09-01 | 大陽日酸株式会社 | 基板回転機構を備えた成膜装置 |
JP2004055636A (ja) * | 2002-07-17 | 2004-02-19 | Sumitomo Chem Co Ltd | 気相成長装置 |
KR100943090B1 (ko) * | 2007-12-07 | 2010-02-18 | 주식회사 시스넥스 | 대면적 화학기상증착기용 유도가열장치 |
JP5139107B2 (ja) * | 2008-02-13 | 2013-02-06 | 大陽日酸株式会社 | 気相成長装置 |
JP2010126797A (ja) * | 2008-11-28 | 2010-06-10 | Tokyo Electron Ltd | 成膜装置、半導体製造装置、これらに用いられるサセプタ、プログラム、およびコンピュータ可読記憶媒体 |
US20100227059A1 (en) * | 2009-03-04 | 2010-09-09 | Tokyo Electron Limited | Film deposition apparatus, film deposition method, and computer readable storage medium |
US9230846B2 (en) * | 2010-06-07 | 2016-01-05 | Veeco Instruments, Inc. | Multi-wafer rotating disc reactor with inertial planetary drive |
CN102766850A (zh) * | 2011-05-05 | 2012-11-07 | 绿种子能源科技股份有限公司 | 薄膜沉积装置 |
CN102154690B (zh) * | 2011-05-23 | 2012-05-30 | 东莞市天域半导体科技有限公司 | 行星式外延生长设备中托盘的构成方法和装置 |
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TWI609987B (zh) | 2018-01-01 |
KR20160057322A (ko) | 2016-05-23 |
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