JP6135455B2 - プラズマ処理装置及びプラズマ処理方法 - Google Patents
プラズマ処理装置及びプラズマ処理方法 Download PDFInfo
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- 238000011144 upstream manufacturing Methods 0.000 claims description 14
- 230000005684 electric field Effects 0.000 claims description 13
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- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 26
- 238000000926 separation method Methods 0.000 description 22
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 7
- 238000004804 winding Methods 0.000 description 7
- 239000007795 chemical reaction product Substances 0.000 description 6
- 229910001873 dinitrogen Inorganic materials 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000010926 purge Methods 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 150000004678 hydrides Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- -1 oxide Chemical class 0.000 description 2
- 238000002407 reforming Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000000415 inactivating effect Effects 0.000 description 1
- 230000002779 inactivation Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000036470 plasma concentration Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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Description
しかしながら、これら特許文献1、2には、プラズマ処理を行うにあたって、ある任意のアンテナの下方側に発生するプラズマの分布を均一化する技術については検討されていない。
基板を載置する基板載置領域を公転させるための回転テーブルと、
前記基板載置領域に対向し、プラズマ発生用のガスの吐出口が前記回転テーブルの外周部側から中心部側に向かって直線状に配列されたノズル部と、
前記ノズル部よりも前記回転テーブルの回転方向下流側にて当該ノズル部に沿って基板の通過領域を跨ぐように伸びる直線部位と、当該直線部位に対して平面で見た時に離間した領域に位置する部位と、を備えると共に、上下方向に伸びる軸の周りに巻回され、前記ガスが供給される処理領域に誘導プラズマを発生させるためのアンテナと、
前記アンテナと前記処理領域との間に当該処理領域とは気密に区画して設けられ、前記アンテナにより発生する電磁界のうち電界を遮断するための導電板と、前記導電板に、前記アンテナの対応する部位と各々直交して形成され、前記電磁界のうちの磁界を通過させるためのスリットの群と、を備えたファラデーシールドと、を備え、
前記アンテナは、前記軸の周りに複数周巻回され、
前記離間した領域に位置する部位は、当該直線部位に対して前記回転テーブルの回転方向下流側に配置されると共に、複数周巻回された前記部位のうち一の部位と他の部位とが前記回転テーブルの回転方向に沿って互いに位置ずれするように配置され、
少なくとも前記直線部位の下方側には前記スリットの群が形成され、前記直線部位の端部から屈曲する屈曲部位の下方側は、スリットの群が存在しない導電板の部位が位置することを特徴とする。
前記アンテナは、前記直線部位に対して前記ノズル部とは反対側に位置する他の直線部位を備え、
前記他の直線部位の下方側には前記スリットの群が形成されていても良い。
前記アンテナは、前記軸の周りに複数周巻回され、前記ノズル部に近い直線部位が複数段積層されていても良い。
前記ノズル部は、前記処理領域の上流側に位置する壁部の近傍にて当該壁部に沿って伸びていても良い。
(VI÷VO)と、(LI÷LO)と、が揃うように、前記壁部が配置されていることが好ましい。
回転テーブル上の基板載置領域に基板を載置して、回転テーブルによりこの基板を公転させる工程と、
この回転テーブルに対向して当該回転テーブルの外周部側から中心部側に向かって直線状に伸びるように設けられたノズル部から、このノズル部の長さ方向に沿って前記真空容器内における処理領域にプラズマ発生用のガスを供給する工程と、
前記ノズル部よりも前記回転テーブルの回転方向下流側にて当該ノズル部に沿って基板の通過領域を跨ぐように伸びる直線部位と、当該直線部位に対して平面で見た時に離間した領域に位置する部位と、を備えると共に上下方向に伸びる軸の周りに巻回されたアンテナにより、前記処理領域に誘導プラズマを発生させる工程と、
前記アンテナと前記処理領域との間に当該処理領域とは気密に区画して設けられた導電板により、前記アンテナにより発生する電磁界のうち電界を遮断すると共に、前記アンテナの対応する部位と各々直交するように前記導電板に形成されたスリットの群を介して前記電磁界のうち磁界を通過させる工程と、を含み、
前記アンテナは、前記軸の周りに複数周巻回され、
前記離間した領域に位置する部位は、当該直線部位に対して前記回転テーブルの回転方向下流側に配置されると共に、複数周巻回された前記部位のうち一の部位と他の部位とが前記回転テーブルの回転方向に沿って互いに位置ずれするように配置され、
少なくとも前記直線部位の下方側には前記スリットの群が形成され、前記直線部位の端部から屈曲する屈曲部位の下方側は、スリットの群が存在しない導電板の部位が位置することを特徴とする。
更に、プラズマ発生用ガスノズル32の上方側にはスリット97を形成していないので、当該プラズマ発生用ガスノズル32の内部あるいは外壁に反応生成物などの付着物が付着することを抑制できる。
また、プラズマ発生用ガスノズル32としては、既述のガスインジェクター方式に代えて、下面側が開口すると共に回転テーブル2の半径方向に沿って伸びる概略箱状体を真空容器1内に設けて、この箱状体の長さ方向にガス吐出孔33を形成した構成を用いても良い。
1 真空容器
2 回転テーブル
P1 吸着領域
P2 反応領域
31、32、34 ガスノズル
83 アンテナ
95 ファラデーシールド
97 スリット
Claims (7)
- 真空容器内にて基板に対してプラズマ処理を行うプラズマ処理装置において、
基板を載置する基板載置領域を公転させるための回転テーブルと、
前記基板載置領域に対向し、プラズマ発生用のガスの吐出口が前記回転テーブルの外周部側から中心部側に向かって直線状に配列されたノズル部と、
前記ノズル部よりも前記回転テーブルの回転方向下流側にて当該ノズル部に沿って基板の通過領域を跨ぐように伸びる直線部位と、当該直線部位に対して平面で見た時に離間した領域に位置する部位と、を備えると共に、上下方向に伸びる軸の周りに巻回され、前記ガスが供給される処理領域に誘導プラズマを発生させるためのアンテナと、
前記アンテナと前記処理領域との間に当該処理領域とは気密に区画して設けられ、前記アンテナにより発生する電磁界のうち電界を遮断するための導電板と、前記導電板に、前記アンテナの対応する部位と各々直交して形成され、前記電磁界のうちの磁界を通過させるためのスリットの群と、を備えたファラデーシールドと、を備え、
前記アンテナは、前記軸の周りに複数周巻回され、
前記離間した領域に位置する部位は、当該直線部位に対して前記回転テーブルの回転方向下流側に配置されると共に、複数周巻回された前記部位のうち一の部位と他の部位とが前記回転テーブルの回転方向に沿って互いに位置ずれするように配置され、
少なくとも前記直線部位の下方側には前記スリットの群が形成され、前記直線部位の端部から屈曲する屈曲部位の下方側は、スリットの群が存在しない導電板の部位が位置することを特徴とするプラズマ処理装置。 - 前記離間した領域に位置する部位は、前記直線部位に対して前記回転テーブルの回転方向下流側に配置されていることを特徴とする請求項1に記載のプラズマ処理装置。
- 前記アンテナは、前記直線部位に対して前記ノズル部とは反対側に位置する他の直線部位を備え、
前記他の直線部位の下方側には前記スリットの群が形成されていることを特徴とする請求項1または2に記載のプラズマ処理装置。 - 前記アンテナは、前記軸の周りに複数周巻回され、前記ノズル部に近い直線部位が複数段積層されていることを特徴とする請求項1ないし3のいずれか1つに記載のプラズマ処理装置。
- 前記回転テーブルの中央から放射状に延びかつ回転テーブルの周方向に離れた2本の線に沿った側部を有する扇型状に処理領域を区画するように、前記真空容器の天板から下に向かう壁部を設け、
前記ノズル部は、前記処理領域の上流側に位置する壁部の近傍にて当該壁部に沿って伸びていることを特徴とする請求項1ないし4のいずれか1つに記載のプラズマ処理装置。 - 前記回転テーブル上の基板における回転中心側の端部が当該回転テーブルの回転によって移動する時の速度をVI、前記基板における前記回転テーブルの周縁部側の端部が当該回転テーブルの回転によって移動する時の速度をVO、前記回転中心側の端部及び前記周縁部側の端部が通過する前記処理領域の長さ寸法を夫々LI、LOとすると、
(VI÷VO)と、(LI÷LO)と、が揃うように、前記壁部が配置されていることを特徴とする請求項5に記載のプラズマ処理装置。 - 真空容器内にて基板に対してプラズマ処理を行うプラズマ処理方法において、
回転テーブル上の基板載置領域に基板を載置して、回転テーブルによりこの基板を公転させる工程と、
この回転テーブルに対向して当該回転テーブルの外周部側から中心部側に向かって直線状に伸びるように設けられたノズル部から、このノズル部の長さ方向に沿って前記真空容器内における処理領域にプラズマ発生用のガスを供給する工程と、
前記ノズル部よりも前記回転テーブルの回転方向下流側にて当該ノズル部に沿って基板の通過領域を跨ぐように伸びる直線部位と、当該直線部位に対して平面で見た時に離間した領域に位置する部位と、を備えると共に上下方向に伸びる軸の周りに巻回されたアンテナにより、前記処理領域に誘導プラズマを発生させる工程と、
前記アンテナと前記処理領域との間に当該処理領域とは気密に区画して設けられた導電板により、前記アンテナにより発生する電磁界のうち電界を遮断すると共に、前記アンテナの対応する部位と各々直交するように前記導電板に形成されたスリットの群を介して前記電磁界のうち磁界を通過させる工程と、を含み、
前記アンテナは、前記軸の周りに複数周巻回され、
前記離間した領域に位置する部位は、当該直線部位に対して前記回転テーブルの回転方向下流側に配置されると共に、複数周巻回された前記部位のうち一の部位と他の部位とが前記回転テーブルの回転方向に沿って互いに位置ずれするように配置され、
少なくとも前記直線部位の下方側には前記スリットの群が形成され、前記直線部位の端部から屈曲する屈曲部位の下方側は、スリットの群が存在しない導電板の部位が位置することを特徴とするプラズマ処理方法。
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