JP6971887B2 - 成膜方法及び成膜装置 - Google Patents
成膜方法及び成膜装置 Download PDFInfo
- Publication number
- JP6971887B2 JP6971887B2 JP2018038039A JP2018038039A JP6971887B2 JP 6971887 B2 JP6971887 B2 JP 6971887B2 JP 2018038039 A JP2018038039 A JP 2018038039A JP 2018038039 A JP2018038039 A JP 2018038039A JP 6971887 B2 JP6971887 B2 JP 6971887B2
- Authority
- JP
- Japan
- Prior art keywords
- raw material
- gas supply
- supply unit
- material gas
- film forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims description 72
- 230000015572 biosynthetic process Effects 0.000 title claims description 18
- 239000007789 gas Substances 0.000 claims description 534
- 239000002994 raw material Substances 0.000 claims description 211
- 238000004140 cleaning Methods 0.000 claims description 145
- 238000010926 purge Methods 0.000 claims description 56
- 239000000758 substrate Substances 0.000 claims description 54
- 238000012545 processing Methods 0.000 claims description 46
- 239000012495 reaction gas Substances 0.000 claims description 34
- 239000007795 chemical reaction product Substances 0.000 claims description 22
- 238000011144 upstream manufacturing Methods 0.000 claims description 21
- 238000000151 deposition Methods 0.000 claims description 14
- 238000001179 sorption measurement Methods 0.000 claims description 11
- 230000008021 deposition Effects 0.000 claims description 4
- 239000010408 film Substances 0.000 description 114
- 235000012431 wafers Nutrition 0.000 description 75
- 230000002093 peripheral effect Effects 0.000 description 42
- 238000000926 separation method Methods 0.000 description 38
- 230000003647 oxidation Effects 0.000 description 8
- 238000007254 oxidation reaction Methods 0.000 description 8
- 239000002245 particle Substances 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 238000005108 dry cleaning Methods 0.000 description 7
- 238000002156 mixing Methods 0.000 description 6
- 230000001590 oxidative effect Effects 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 238000012805 post-processing Methods 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000003028 elevating effect Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000002052 molecular layer Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000005121 nitriding Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 101100441092 Danio rerio crlf3 gene Proteins 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Magnetic Heads (AREA)
- Medicinal Preparation (AREA)
Description
前記成膜装置の処理室に基板を搬入する搬入工程と、
前記処理室内の圧力及び温度を含む成膜条件を調整する成膜前処理工程と、
前記クリーニングガス供給部にパージガスを供給することなく前記原料ガス供給部から原料ガスを基板に供給して前記原料ガスを前記基板に吸着させる工程と、
前記クリーニングガス供給部にパージガスを供給することなく、前記原料ガスが吸着した前記基板に前記原料ガスと反応して反応生成物を生成可能な反応ガスを供給し、前記基板上に前記反応生成物を堆積させる工程と、
前記原料ガスを前記基板に吸着させる工程及び前記基板上に前記反応生成物を堆積させる工程を、前記反応生成物が所定の厚さとなるまで周期的に繰り返す成膜工程と、
前記成膜工程の後に、前記原料ガスの供給を停止して前記処理室内の状態を調整する成膜後処理工程と、
前記基板を前記処理室から搬出する搬出工程と、を有し、
前記搬入工程、前記成膜前処理工程、前記成膜工程、前記成膜後処理工程及び前記搬出工程を周期的に繰り返し、前記成膜工程以外の前記搬入工程、前記成膜前処理工程、前記成膜後処理工程及び前記搬出工程の一部又は総ての期間において、前記クリーニングガス供給部にパージガスを供給して前記クリーニングガス供給部をパージするクリーニングラインパージ工程を更に有する。
まず、本発明の実施形態に係る成膜装置について説明する。図1から図3までを参照すると、成膜装置は、ほぼ円形の平面形状を有する扁平な真空容器1と、真空容器1内に設けられ、真空容器1の中心に回転中心を有する回転テーブル2と、を備えている。真空容器1は、内部に収容したウェハの表面上に成膜処理を行うための処理室である。真空容器1は、有底の円筒形状を有する容器本体12と、容器本体12の上面に対して、例えばOリングなどのシール部材13(図1)を介して気密に着脱可能に配置される天板11とを有している。
以下、本発明の実施形態に係る成膜方法について説明する。本実施形態に係る成膜方法では、上述の本実施形態に係る成膜装置を用いた例を挙げて説明する。本実施形態に係る成膜方法は、原料ガス及び反応ガスの種類は問わず、種々の薄膜を成膜するプロセスに適用可能であるが、説明の容易のため、原料ガスとしてSi含有ガスを供給し、反応ガスとして酸化ガスを供給した例を挙げて説明する。
から酸化ガスを供給した状態で、回転テーブル2の回転を継続する成膜後処理工程を行う。これにより、未反応のSi含有ガスが酸化ガスと反応し、シリコン酸化膜が緻密化され、品質が向上する。その後は、酸化ガスの供給も停止するとともに、パージガス(N2)の供給も停止し、回転テーブル2の回転を停止させる。真空容器1内の温度、圧力等の条件も元に戻してよい。このような成膜後の処理を成膜後処理工程と呼ぶ。
2 回転テーブル
24 凹部
30 シャワーヘッド
31 底面板
32 原料ガス供給部
33 軸側原料ガス供給部
34 外周側原料ガス供給部
35 クリーニングガス供給部
50 反応ガスノズル
60 クリーニングガスノズル
32a〜35a ガス吐出孔
32b〜35b ガス導入路
32c〜35c ガス導入部
121〜125 流量制御器
131〜135 ガス供給源
P1、P2 処理領域
W ウェハ
Claims (11)
- 原料ガス供給部と、クリーニングガス供給部とを有する成膜装置を用いた成膜方法であって、
前記成膜装置の処理室に基板を搬入する搬入工程と、
前記処理室内の圧力及び温度を含む成膜条件を調整する成膜前処理工程と、
前記クリーニングガス供給部にパージガスを供給することなく前記原料ガス供給部から原料ガスを基板に供給して前記原料ガスを前記基板に吸着させる工程と、
前記クリーニングガス供給部にパージガスを供給することなく、前記原料ガスが吸着した前記基板に前記原料ガスと反応して反応生成物を生成可能な反応ガスを供給し、前記基板上に前記反応生成物を堆積させる工程と、
前記原料ガスを前記基板に吸着させる工程及び前記基板上に前記反応生成物を堆積させる工程を、前記反応生成物が所定の厚さとなるまで周期的に繰り返す成膜工程と、
前記成膜工程の後に、前記原料ガスの供給を停止して前記処理室内の状態を調整する成膜後処理工程と、
前記基板を前記処理室から搬出する搬出工程と、を有し、
前記搬入工程、前記成膜前処理工程、前記成膜工程、前記成膜後処理工程及び前記搬出工程を周期的に繰り返し、前記成膜工程以外の前記搬入工程、前記成膜前処理工程、前記成膜後処理工程及び前記搬出工程の一部又は総ての期間において、前記クリーニングガス供給部にパージガスを供給して前記クリーニングガス供給部をパージするクリーニングラインパージ工程を更に有する成膜方法。 - 前記クリーニングラインパージ工程は、前記搬出工程と前記搬入工程との間の前記処理室内に前記基板が存在しないときに行われる請求項1に記載の成膜方法。
- 前記処理室は複数の基板を収容可能であり、
前記搬入工程及び前記搬出工程は、前記複数の基板の1枚を前記処理室から搬出してから搬出したスペースに新たな基板を搬入する差替え工程を含む請求項1又は2に記載の成膜方法。 - 前記クリーニングガス供給部は、前記原料ガス供給部の近傍に配置されている請求項1乃至3のいずれか一項に記載の成膜方法。
- 前記クリーニングガス供給部は、前記処理室内に設けられた排気口からの排気により形成される排気方向において、前記原料ガス供給部の上流側に設けられた請求項1乃至3のいずれか一項に記載の成膜方法。
- 前記処理室内には、複数の基板を周方向に沿って載置可能な基板載置領域を有する回転テーブルが設けられ、
前記回転テーブルの上方において、前記回転テーブルの回転方向に沿って互いに離間して原料ガス吸着領域及び反応生成物堆積領域が設けられ、
前記回転テーブルを回転させることにより、前記複数の基板に前記原料ガス吸着領域及び前記反応生成物堆積領域を順次通過させ、
前記複数の基板が前記原料ガス吸着領域を通過したときに前記原料ガスを前記基板に吸着させる工程を実行し、
前記複数の基板が前記反応生成物堆積領域を通過したときに前記基板上に前記反応生成物を堆積させる工程を実行する請求項1乃至3又は5のいずれか一項に記載の成膜方法。 - 前記原料ガス供給部及び前記クリーニングガス供給部は、前記回転テーブルの半径方向に沿って延びた直線的な平面形状を有するとともに、略平行に並んで、前記原料ガス吸着領域内に設けられている請求項6に記載の成膜方法。
- 前記原料ガス供給部及び前記クリーニングガス供給部は、シャワーヘッドの底面に設けられている請求項7に記載の成膜方法。
- 前記原料ガス供給部及び前記クリーニングガス供給部は、前記回転テーブルに平行に設けられた整流板に覆われた互いに独立したガスノズルである請求項7に記載の成膜方法。
- 処理室と、
前記処理室内に設けられ、周方向に沿って基板を載置可能な基板載置領域を有する回転テーブルと、
前記回転テーブルの表面に原料ガスを供給可能であり、前記回転テーブルの半径方向に沿って延び、前記基板載置領域を前記半径方向において覆うように設けられた原料ガス供給部と、
前記原料ガス供給部の近傍で、前記原料ガス供給部と略平行に設けられたクリーニングガス供給部と、
前記原料ガス供給部及び前記クリーニングガス供給部の前記回転テーブルの回転方向下流側に、前記原料ガス供給部及び前記クリーニングガス供給部と離間して設けられ、前記原料ガスと反応して反応生成物を堆積可能な反応ガスを供給する反応ガス供給部と、
前記クリーニングガス供給部からパージガスを供給しない状態で前記原料ガス供給部から前記原料ガス、前記反応ガス供給部から前記反応ガスを供給させるとともに、前記回転テーブルを回転させて前記基板の表面への前記原料ガスの吸着、前記基板の表面に吸着した前記原料ガスと前記反応ガスとの反応により前記反応生成物を前記基板の表面上に堆積させる成膜工程を実施する制御を行う制御部と、を有する成膜装置。 - 前記制御部は、前記成膜工程を実施していないいずれかのときに、前記クリーニングガス供給部から前記パージガスを供給させる制御を行う請求項10に記載の成膜装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018038039A JP6971887B2 (ja) | 2018-03-02 | 2018-03-02 | 成膜方法及び成膜装置 |
KR1020190018945A KR102491924B1 (ko) | 2018-03-02 | 2019-02-19 | 성막 방법 및 성막 장치 |
US16/285,352 US11702739B2 (en) | 2018-03-02 | 2019-02-26 | Film deposition method and film deposition apparatus |
TW108106427A TWI791778B (zh) | 2018-03-02 | 2019-02-26 | 成膜方法及成膜裝置 |
CN201910154884.9A CN110218989B (zh) | 2018-03-02 | 2019-03-01 | 成膜方法和成膜装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018038039A JP6971887B2 (ja) | 2018-03-02 | 2018-03-02 | 成膜方法及び成膜装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019153700A JP2019153700A (ja) | 2019-09-12 |
JP6971887B2 true JP6971887B2 (ja) | 2021-11-24 |
Family
ID=67768502
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018038039A Active JP6971887B2 (ja) | 2018-03-02 | 2018-03-02 | 成膜方法及び成膜装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US11702739B2 (ja) |
JP (1) | JP6971887B2 (ja) |
KR (1) | KR102491924B1 (ja) |
CN (1) | CN110218989B (ja) |
TW (1) | TWI791778B (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7037526B2 (ja) * | 2019-09-10 | 2022-03-16 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法及びプログラム |
JP7274387B2 (ja) * | 2019-09-24 | 2023-05-16 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
JP7098677B2 (ja) * | 2020-03-25 | 2022-07-11 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法及びプログラム |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3476638B2 (ja) * | 1996-12-20 | 2003-12-10 | 東京エレクトロン株式会社 | Cvd成膜方法 |
JP2003077839A (ja) * | 2001-08-30 | 2003-03-14 | Toshiba Corp | 半導体製造装置のパージ方法及び半導体装置の製造方法 |
JP4235076B2 (ja) * | 2003-10-08 | 2009-03-04 | 東京エレクトロン株式会社 | 半導体製造装置および半導体製造方法 |
JP5031013B2 (ja) | 2008-11-19 | 2012-09-19 | 東京エレクトロン株式会社 | 成膜装置、成膜装置のクリーニング方法、プログラム、プログラムを記憶するコンピュータ可読記憶媒体 |
JP6011417B2 (ja) * | 2012-06-15 | 2016-10-19 | 東京エレクトロン株式会社 | 成膜装置、基板処理装置及び成膜方法 |
JP5857896B2 (ja) * | 2012-07-06 | 2016-02-10 | 東京エレクトロン株式会社 | 成膜装置の運転方法及び成膜装置 |
JP6114708B2 (ja) * | 2013-05-27 | 2017-04-12 | 東京エレクトロン株式会社 | 基板脱離検出装置及び基板脱離検出方法、並びにこれらを用いた基板処理装置及び基板処理方法 |
JP6123688B2 (ja) * | 2014-01-29 | 2017-05-10 | 東京エレクトロン株式会社 | 成膜装置 |
JP6221932B2 (ja) * | 2014-05-16 | 2017-11-01 | 東京エレクトロン株式会社 | 成膜装置 |
JP6298383B2 (ja) * | 2014-08-19 | 2018-03-20 | 株式会社日立国際電気 | 基板処理装置及び半導体装置の製造方法 |
JP6388553B2 (ja) * | 2015-03-03 | 2018-09-12 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
JP6468955B2 (ja) * | 2015-06-23 | 2019-02-13 | 東京エレクトロン株式会社 | シリコン含有膜の成膜方法及び成膜装置 |
-
2018
- 2018-03-02 JP JP2018038039A patent/JP6971887B2/ja active Active
-
2019
- 2019-02-19 KR KR1020190018945A patent/KR102491924B1/ko active IP Right Grant
- 2019-02-26 TW TW108106427A patent/TWI791778B/zh active
- 2019-02-26 US US16/285,352 patent/US11702739B2/en active Active
- 2019-03-01 CN CN201910154884.9A patent/CN110218989B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
KR102491924B1 (ko) | 2023-01-27 |
CN110218989B (zh) | 2022-08-05 |
CN110218989A (zh) | 2019-09-10 |
JP2019153700A (ja) | 2019-09-12 |
TW201945578A (zh) | 2019-12-01 |
KR20190104884A (ko) | 2019-09-11 |
TWI791778B (zh) | 2023-02-11 |
US11702739B2 (en) | 2023-07-18 |
US20190271077A1 (en) | 2019-09-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5031013B2 (ja) | 成膜装置、成膜装置のクリーニング方法、プログラム、プログラムを記憶するコンピュータ可読記憶媒体 | |
US10475641B2 (en) | Substrate processing apparatus | |
JP5107185B2 (ja) | 成膜装置、基板処理装置、成膜方法及びこの成膜方法を実行させるためのプログラムを記録した記録媒体 | |
TWI506159B (zh) | 成膜裝置 | |
KR101562396B1 (ko) | 성막 장치 및 기판 처리 장치 | |
TWI523970B (zh) | 成膜裝置(一) | |
JP6478847B2 (ja) | 基板処理装置 | |
JP5068780B2 (ja) | 成膜装置、成膜方法、プログラム、およびコンピュータ可読記憶媒体 | |
JP5093162B2 (ja) | 成膜装置、成膜方法及び記憶媒体 | |
KR101848123B1 (ko) | 기판 처리 방법 및 기판 처리 장치 | |
JP5823922B2 (ja) | 成膜方法 | |
JP5262452B2 (ja) | 成膜装置及び基板処理装置 | |
KR102170612B1 (ko) | 클리닝 방법 | |
JP6685216B2 (ja) | 成膜装置、成膜方法、プログラム及びコンピュータ可読記憶媒体 | |
TWI547588B (zh) | 成膜方法(一) | |
JP6971887B2 (ja) | 成膜方法及び成膜装置 | |
JP2010135510A (ja) | 成膜装置 | |
JP2013133521A (ja) | 成膜方法 | |
JP7042689B2 (ja) | サセプタのドライクリーニング方法及び基板処理装置 | |
JP7274387B2 (ja) | 成膜装置及び成膜方法 | |
JP5913079B2 (ja) | 成膜方法 | |
JP6494495B2 (ja) | 基板処理方法及び基板処理装置 | |
JP2010129983A (ja) | 成膜装置 | |
JP6096955B2 (ja) | 成膜方法 | |
JP6906439B2 (ja) | 成膜方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200821 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20210707 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210720 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210917 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20211005 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20211102 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6971887 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |