JP4650413B2 - 液浸リソグフラフィ装置用の移送領域を含む環境システム - Google Patents

液浸リソグフラフィ装置用の移送領域を含む環境システム Download PDF

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Publication number
JP4650413B2
JP4650413B2 JP2006509568A JP2006509568A JP4650413B2 JP 4650413 B2 JP4650413 B2 JP 4650413B2 JP 2006509568 A JP2006509568 A JP 2006509568A JP 2006509568 A JP2006509568 A JP 2006509568A JP 4650413 B2 JP4650413 B2 JP 4650413B2
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Japan
Prior art keywords
gap
immersion fluid
environment
wafer
projection system
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Expired - Fee Related
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JP2006509568A
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Japanese (ja)
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JP2006523028A5 (enExample
JP2006523028A (ja
Inventor
トーマス， ダブリュ． ノヴァク，
アンドリュー， ジェイ． ハゼルトン，
ダグラス， シイ． ワトソン，
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Nikon Corp
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Nikon Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00—Photographic printing apparatus
    • G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
    • G03B27/42—Projection printing apparatus, e.g. enlarger, copying camera for automatic sequential copying of the same original
    • G03B27/426—Projection printing apparatus, e.g. enlarger, copying camera for automatic sequential copying of the same original in enlargers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Toxicology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2006509568A 2003-04-10 2004-04-01 液浸リソグフラフィ装置用の移送領域を含む環境システム Expired - Fee Related JP4650413B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US46211203P 2003-04-10 2003-04-10
US48503303P 2003-07-02 2003-07-02
PCT/US2004/009994 WO2004092833A2 (en) 2003-04-10 2004-04-01 Environmental system including a transport region for an immersion lithography apparatus

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010026009A Division JP5088388B2 (ja) 2003-04-10 2010-02-08 液浸リソグフラフィ装置用の移送領域を含む環境システム

Publications (3)

Publication Number Publication Date
JP2006523028A JP2006523028A (ja) 2006-10-05
JP2006523028A5 JP2006523028A5 (enExample) 2010-04-02
JP4650413B2 true JP4650413B2 (ja) 2011-03-16

Family

ID=33303064

Family Applications (10)

Application Number Title Priority Date Filing Date
JP2006509568A Expired - Fee Related JP4650413B2 (ja) 2003-04-10 2004-04-01 液浸リソグフラフィ装置用の移送領域を含む環境システム
JP2010026009A Expired - Fee Related JP5088388B2 (ja) 2003-04-10 2010-02-08 液浸リソグフラフィ装置用の移送領域を含む環境システム
JP2011106092A Expired - Fee Related JP5644660B2 (ja) 2003-04-10 2011-05-11 露光装置、露光方法、及びデバイス製造方法
JP2012083122A Expired - Fee Related JP5644804B2 (ja) 2003-04-10 2012-03-30 露光装置及びデバイス製造方法
JP2013269879A Expired - Fee Related JP5765414B2 (ja) 2003-04-10 2013-12-26 液浸リソグフラフィ装置用の移送領域を含む環境システム
JP2014247000A Expired - Fee Related JP5954394B2 (ja) 2003-04-10 2014-12-05 液浸リソグフラフィ装置用の移送領域を含む環境システム
JP2015219233A Expired - Lifetime JP6319270B2 (ja) 2003-04-10 2015-11-09 液浸露光方法及びそれを用いたマイクロデバイスの製造方法
JP2016227059A Expired - Fee Related JP6409853B2 (ja) 2003-04-10 2016-11-22 液浸露光装置及びデバイス製造方法
JP2017238410A Pending JP2018041111A (ja) 2003-04-10 2017-12-13 液浸露光装置
JP2018237299A Withdrawn JP2019045881A (ja) 2003-04-10 2018-12-19 装置

Family Applications After (9)

Application Number Title Priority Date Filing Date
JP2010026009A Expired - Fee Related JP5088388B2 (ja) 2003-04-10 2010-02-08 液浸リソグフラフィ装置用の移送領域を含む環境システム
JP2011106092A Expired - Fee Related JP5644660B2 (ja) 2003-04-10 2011-05-11 露光装置、露光方法、及びデバイス製造方法
JP2012083122A Expired - Fee Related JP5644804B2 (ja) 2003-04-10 2012-03-30 露光装置及びデバイス製造方法
JP2013269879A Expired - Fee Related JP5765414B2 (ja) 2003-04-10 2013-12-26 液浸リソグフラフィ装置用の移送領域を含む環境システム
JP2014247000A Expired - Fee Related JP5954394B2 (ja) 2003-04-10 2014-12-05 液浸リソグフラフィ装置用の移送領域を含む環境システム
JP2015219233A Expired - Lifetime JP6319270B2 (ja) 2003-04-10 2015-11-09 液浸露光方法及びそれを用いたマイクロデバイスの製造方法
JP2016227059A Expired - Fee Related JP6409853B2 (ja) 2003-04-10 2016-11-22 液浸露光装置及びデバイス製造方法
JP2017238410A Pending JP2018041111A (ja) 2003-04-10 2017-12-13 液浸露光装置
JP2018237299A Withdrawn JP2019045881A (ja) 2003-04-10 2018-12-19 装置

Country Status (7)

Country Link
US (11) US7251017B2 (enExample)
EP (3) EP3352015A1 (enExample)
JP (10) JP4650413B2 (enExample)
KR (9) KR101177330B1 (enExample)
CN (1) CN101813892B (enExample)
HK (1) HK1253211A1 (enExample)
WO (1) WO2004092833A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011187976A (ja) * 2003-04-10 2011-09-22 Nikon Corp 液浸リソグフラフィ装置用の移送領域を含む環境システム
JP2017016158A (ja) * 2003-09-03 2017-01-19 株式会社ニコン 液浸リソグラフィのための流体の供給装置及び方法

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JP2015079982A (ja) 2015-04-23
KR20050120795A (ko) 2005-12-23
EP1611486B1 (en) 2016-03-16
KR101745223B1 (ko) 2017-06-08
EP1611486A2 (en) 2006-01-04
WO2004092833A3 (en) 2005-12-01
US20140354967A1 (en) 2014-12-04
KR101497289B1 (ko) 2015-02-27
US9632427B2 (en) 2017-04-25
US20180164703A1 (en) 2018-06-14
EP3352015A1 (en) 2018-07-25
HK1091272A1 (zh) 2007-01-12
US7929111B2 (en) 2011-04-19
US20070252962A1 (en) 2007-11-01
EP1611486A4 (en) 2008-10-22
JP2016026329A (ja) 2016-02-12
US7345742B2 (en) 2008-03-18
JP2012129564A (ja) 2012-07-05
JP6409853B2 (ja) 2018-10-24
CN101813892B (zh) 2013-09-25
KR101431938B1 (ko) 2014-08-19
KR20140139139A (ko) 2014-12-04
US20080030704A1 (en) 2008-02-07
JP5644804B2 (ja) 2014-12-24
KR20130055028A (ko) 2013-05-27
HK1253211A1 (en) 2019-06-14
US7929110B2 (en) 2011-04-19
JP5088388B2 (ja) 2012-12-05
US9910370B2 (en) 2018-03-06
US20070252961A1 (en) 2007-11-01
KR20140057352A (ko) 2014-05-12

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