JP4409455B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP4409455B2
JP4409455B2 JP2005022478A JP2005022478A JP4409455B2 JP 4409455 B2 JP4409455 B2 JP 4409455B2 JP 2005022478 A JP2005022478 A JP 2005022478A JP 2005022478 A JP2005022478 A JP 2005022478A JP 4409455 B2 JP4409455 B2 JP 4409455B2
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electrode
semiconductor chip
chip
semiconductor
concave
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JP2005022478A
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Japanese (ja)
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JP2006210745A (ja
JP2006210745A5 (enExample
Inventor
直敬 田中
保廣 吉村
孝洋 内藤
隆 赤沢
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Renesas Technology Corp
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Renesas Technology Corp
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Priority to JP2005022478A priority Critical patent/JP4409455B2/ja
Priority to US11/329,600 priority patent/US7291929B2/en
Publication of JP2006210745A publication Critical patent/JP2006210745A/ja
Publication of JP2006210745A5 publication Critical patent/JP2006210745A5/ja
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  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2005022478A 2005-01-31 2005-01-31 半導体装置の製造方法 Expired - Fee Related JP4409455B2 (ja)

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JP2005022478A JP4409455B2 (ja) 2005-01-31 2005-01-31 半導体装置の製造方法
US11/329,600 US7291929B2 (en) 2005-01-31 2006-01-10 Semiconductor device and method of manufacturing thereof

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JP2005022478A JP4409455B2 (ja) 2005-01-31 2005-01-31 半導体装置の製造方法

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JP2006210745A JP2006210745A (ja) 2006-08-10
JP2006210745A5 JP2006210745A5 (enExample) 2007-05-31
JP4409455B2 true JP4409455B2 (ja) 2010-02-03

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI495053B (zh) * 2012-03-23 2015-08-01 東芝股份有限公司 Semiconductor device

Families Citing this family (85)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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