JP3708938B2 - 第2の発光ダイオード層に対する接合のための発光ダイオード層表面のパターン形成 - Google Patents
第2の発光ダイオード層に対する接合のための発光ダイオード層表面のパターン形成 Download PDFInfo
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- JP3708938B2 JP3708938B2 JP2003294342A JP2003294342A JP3708938B2 JP 3708938 B2 JP3708938 B2 JP 3708938B2 JP 2003294342 A JP2003294342 A JP 2003294342A JP 2003294342 A JP2003294342 A JP 2003294342A JP 3708938 B2 JP3708938 B2 JP 3708938B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0756—Stacked arrangements of devices
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0083—Processes for devices with an active region comprising only II-VI compounds
- H01L33/0087—Processes for devices with an active region comprising only II-VI compounds with a substrate not being a II-VI compound
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
- Wire Bonding (AREA)
- Recrystallisation Techniques (AREA)
Description
1. 所望の機械特性を有する発光ダイオード層(32,34,36及び38)の製造と適応性がある特性を有する第1材料を選択し、選択された第1材料から成る第1基板(30)を設け、第1基板上に発光ダイオード層を製造することによって発光ダイオード基板(40)を形成し、発光ダイオード構造の性能の向上に適する透光性材料を選択し、および選択された透光性材料の透明層(42)を発光ダイオード層にウェーハ・ボンディングする工程とからなる発光ダイオードの製造方法である。
32,34,36,38,156A,174,178 発光ダイオード層
40,64,128,144A 発光ダイオード構造
42,78 導電性、透光性基板
44,142,144,154,156 電極
46 第2の電極
48,182 第2基板
50,152 ウェーハ・ボンデイング層
56,58 接点金属化領域
60 ミラー
62,136,146,180 基板
68,132 能動層
72 トンネル接合層
74 上部電極
76 下部電極
80,110,112,114,120 ウェーハ
84,116 第1黒鉛部材
86,118 第2黒鉛部材
92 石英管
94 反応炉
96,98 黒鉛部材
102 加熱炉管
126 半導体ウェーハ
134 下部の密封層
138 下部表面
140,148,150 窪み
158 上層
160 下層
162,164 外部層
166,168,170,172 電極
Claims (16)
- 境界面で接合された隣接する第1の層と第2の層を含む複数の層を有する発光ダイオード(LED)を形成する方法であって、
電気的特性が前記第1の層及び前記第2の層の前記境界面に沿って選択的に変化するように、前記第1の層の第1の表面をパターン形成し、前記パターン形成が前記第1の層の表面をエッチングし、窪んでいない領域によって取り囲まれている1又はより多くの窪み領域を形成することを含み、及び
前記第2の層の表面と前記第1の層の表面との間に電流は流れるが、前記第2の層と前記1又はより多くの窪み領域との間に電流が流れないように、前記第1の層の前記第1の表面を前記第2の層にウェーハ・ボンディングすることからなる、発光ダイオードの形成方法。 - LED層をエピタキシャル成長させることをさらに含み、前記第1の層の前記第1の表面のパターン形成が、前記エピタキシャル成長されるLED層に所望の電流経路を画定するパターンを選択することを含む、請求項1の方法。
- 電圧を印加するために前記1又はより多くの窪み領域と位置合わせされた電極を形成し、この電極が前記第1の層の、前記第2の層と反対側の側面に配置される、請求項1の方法。
- 前記第1の表面のパターン形成が、前記第1の層に電流拡散を行わせる、請求項1の方法。
- 前記第1の表面のパターン形成が、前記LEDによって発生される光の光反射パターンを生成する、請求項1の方法。
- 前記第1の表面のパターン形成が、電流の流れを限定して前記LEDをスポット・エミッタとする、請求項1の方法。
- 前記第1の表面のパターン形成が、前記第1の層に電流限定経路を形成させる、請求項1の方法。
- ウェーハ・ボンディングされた境界面で接合された隣接する第1の層と第2の層を含む複数の層からなり、前記境界面がパターン形成された前記第1の層の第1の表面を含み、前記パターンが電気的特性を前記第1の層及び前記第2の層の前記境界面に沿って変化させ、前記パターンが前記第1の層の窪んでいない領域によって取り囲まれているエッチングにより形成された1又はより多くの窪み領域を含み、それによって前記第2の層の表面と前記第1の層の表面との間に電流が流れ、前記第2の層と前記1又はより多くの窪み領域の間で電流が流れない、発光ダイオード(LED)の構造。
- 前記複数の層がエピタキシャル成長されたLED層であり、前記パターンが前記エピタキシャル成長されたLED層に対して所望の電流経路を画定する、請求項8の構造。
- 電圧を印加するために前記1又はより多くの窪み領域と位置合わせされた電極をさらに含み、この電極が前記第1の層の、前記第2の層と反対側の側面に配置されている、請求項8の構造。
- 前記パターンが、前記第1の層に電流拡散を行わせる、請求項8の構造。
- 前記パターンが、前記LEDによって発生される光の光反射パターンを生成する、請求項8の構造。
- 前記パターンが、前記LEDを通る電流の流れを制御して前記LEDを少なくとも1つのスポット・エミッタとする、請求項8の構造。
- 前記パターンが、前記第1の層に1又はより多くの電流限定経路を形成させる、請求項8の構造。
- 前記第1の層の前記第1の表面が間に層を介在させずに前記第2の層に直接接合されている、請求項8の構造。
- 前記第1の層の前記第1の表面が間に層を介在させずに前記第2の層に直接接合される、請求項1の方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/036,532 US5376580A (en) | 1993-03-19 | 1993-03-19 | Wafer bonding of light emitting diode layers |
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JP06452894A Division JP3532953B2 (ja) | 1993-03-19 | 1994-03-08 | 発光ダイオードの製造方法 |
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JP2004080042A JP2004080042A (ja) | 2004-03-11 |
JP3708938B2 true JP3708938B2 (ja) | 2005-10-19 |
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Application Number | Title | Priority Date | Filing Date |
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JP06452894A Expired - Lifetime JP3532953B2 (ja) | 1993-03-19 | 1994-03-08 | 発光ダイオードの製造方法 |
JP2003294342A Expired - Lifetime JP3708938B2 (ja) | 1993-03-19 | 2003-08-18 | 第2の発光ダイオード層に対する接合のための発光ダイオード層表面のパターン形成 |
JP2003294341A Pending JP2004006986A (ja) | 1993-03-19 | 2003-08-18 | 発光ダイオード層と接合されたウェーハとの間の反射性境界面 |
JP2006226767A Pending JP2006319374A (ja) | 1993-03-19 | 2006-08-23 | 発光ダイオード層と接合されたウェーハとの間の反射性境界面 |
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JP06452894A Expired - Lifetime JP3532953B2 (ja) | 1993-03-19 | 1994-03-08 | 発光ダイオードの製造方法 |
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JP2003294341A Pending JP2004006986A (ja) | 1993-03-19 | 2003-08-18 | 発光ダイオード層と接合されたウェーハとの間の反射性境界面 |
JP2006226767A Pending JP2006319374A (ja) | 1993-03-19 | 2006-08-23 | 発光ダイオード層と接合されたウェーハとの間の反射性境界面 |
Country Status (6)
Country | Link |
---|---|
US (2) | US5376580A (ja) |
EP (4) | EP0727830B1 (ja) |
JP (4) | JP3532953B2 (ja) |
KR (4) | KR100338180B1 (ja) |
DE (2) | DE69406964T2 (ja) |
TW (1) | TW280039B (ja) |
Families Citing this family (350)
Publication number | Priority date | Publication date | Assignee | Title |
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US5376580A (en) * | 1993-03-19 | 1994-12-27 | Hewlett-Packard Company | Wafer bonding of light emitting diode layers |
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- 1994-01-20 TW TW083100474A patent/TW280039B/zh not_active IP Right Cessation
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- 1994-01-21 EP EP96106635A patent/EP0727829A3/en not_active Withdrawn
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- 1994-03-18 KR KR1019940005398A patent/KR100338180B1/ko not_active IP Right Cessation
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KR100401370B1 (ko) | 2003-10-17 |
DE69406964T2 (de) | 1998-06-04 |
US5502316A (en) | 1996-03-26 |
KR940022932A (ko) | 1994-10-22 |
EP0727830B1 (en) | 2003-04-02 |
EP0730311A3 (en) | 1997-01-29 |
JP2004080042A (ja) | 2004-03-11 |
EP0727830A2 (en) | 1996-08-21 |
DE69406964D1 (de) | 1998-01-08 |
KR100339963B1 (ko) | 2002-06-22 |
EP0727829A3 (en) | 1997-01-29 |
KR100338180B1 (ko) | 2002-08-24 |
KR100342749B1 (ko) | 2002-07-04 |
EP0727830A3 (en) | 1997-01-29 |
EP0616376B1 (en) | 1997-11-26 |
JPH06302857A (ja) | 1994-10-28 |
EP0730311A2 (en) | 1996-09-04 |
JP2004006986A (ja) | 2004-01-08 |
US5376580A (en) | 1994-12-27 |
DE69432426D1 (de) | 2003-05-08 |
DE69432426T2 (de) | 2004-03-11 |
EP0616376A1 (en) | 1994-09-21 |
TW280039B (ja) | 1996-07-01 |
JP2006319374A (ja) | 2006-11-24 |
EP0727829A2 (en) | 1996-08-21 |
JP3532953B2 (ja) | 2004-05-31 |
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