JP2016167600A - フィールドプレートを有する半導体デバイス - Google Patents
フィールドプレートを有する半導体デバイス Download PDFInfo
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- JP2016167600A JP2016167600A JP2016051755A JP2016051755A JP2016167600A JP 2016167600 A JP2016167600 A JP 2016167600A JP 2016051755 A JP2016051755 A JP 2016051755A JP 2016051755 A JP2016051755 A JP 2016051755A JP 2016167600 A JP2016167600 A JP 2016167600A
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- layer
- electrode
- iii
- etch stop
- electrode defining
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- 239000004065 semiconductor Substances 0.000 title abstract description 34
- 239000000463 material Substances 0.000 claims abstract description 99
- 238000005530 etching Methods 0.000 claims abstract description 89
- 238000000034 method Methods 0.000 claims description 55
- 239000012212 insulator Substances 0.000 claims description 35
- 230000008569 process Effects 0.000 claims description 33
- 239000000203 mixture Substances 0.000 claims description 23
- 239000006185 dispersion Substances 0.000 claims description 21
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 238000002161 passivation Methods 0.000 claims description 15
- 238000001312 dry etching Methods 0.000 claims description 7
- 229910052731 fluorine Inorganic materials 0.000 claims description 7
- 239000011737 fluorine Substances 0.000 claims description 7
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 238000001039 wet etching Methods 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 2
- 238000009413 insulation Methods 0.000 abstract 4
- 229920002120 photoresistant polymer Polymers 0.000 description 16
- 239000000758 substrate Substances 0.000 description 14
- 230000004888 barrier function Effects 0.000 description 13
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 238000001020 plasma etching Methods 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 238000009616 inductively coupled plasma Methods 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
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- 125000001153 fluoro group Chemical group F* 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- LKJPSUCKSLORMF-UHFFFAOYSA-N Monolinuron Chemical compound CON(C)C(=O)NC1=CC=C(Cl)C=C1 LKJPSUCKSLORMF-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000000742 single-metal deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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Abstract
Description
グマスクとして使用されるホトレジストが傾斜している側壁を有し、使用されるドライエッチング技術によってこれもエッチングされる。
Claims (52)
- III−N材料層と、
前記III−N材料層の表面上に設けられた絶縁体層と、
前記III−N材料層と反対側の前記絶縁体層上に設けられたエッチング停止層と、
前記絶縁体層とは反対側の前記エッチング停止層上に設けられた電極画定層と、
電極と、を備え、
前記電極画定層内に凹部が形成され、前記電極は、前記凹部内に形成されているIII−Nデバイス。 - 前記電極は、フィールドプレートを含む請求項1記載のデバイス。
- 前記フィールドプレートは、傾斜フィールドプレートである請求項2記載のデバイス。
- 前記電極画定層の凹部の一部は、少なくとも一部が前記エッチング停止層の主面に対して非垂直な角度を形成する傾けられた壁を有し、前記傾けられた壁が前記傾斜フィールドプレートを画定する請求項3記載のデバイス。
- 前記非垂直な角度は、約5度から約85度までの間である請求項4記載のデバイス。
- 前記絶縁層は、パッシベーション層である請求項1乃至5何れか1項記載のデバイス。
- 前記絶縁層は、酸化物又は窒化物によって形成されている請求項1乃至5何れか1項記載のデバイス。
- 前記絶縁体層は、厚さが約2nmから50nmである請求項7記載のデバイス。
- 前記絶縁体層は、単位面積あたりのキャパシタンスが約0.8mF/m2から40mF/m2である請求項1乃至5何れか1項記載のデバイス。
- 前記電極画定層は、酸化物又は窒化物によって形成されている請求項1乃至5何れか1項記載のデバイス。
- 前記電極画定層は、厚さが少なくとも約100nmである請求項10記載のデバイス。
- 前記絶縁体層及び前記電極画定層の組み合わされた厚さが、実質的に分散を抑制するために十分である請求項1乃至5何れか1項記載のデバイス。
- 前記エッチング停止層は、厚さが約1nmから15nmである請求項1乃至5何れか1項記載のデバイス。
- 前記エッチング停止層は、窒化アルミニウムによって形成されている請求項13記載のデバイス。
- 前記電極画定層及び前記エッチング停止層は、異なる材料によって形成されている請求項1乃至5何れか1項記載のデバイス。
- 前記エッチング停止層及び前記絶縁体層は、異なる材料によって形成されている請求項1乃至5何れか1項記載のデバイス。
- 前記凹部は、前記エッチング停止層内に形成されている請求項1乃至5何れか1項記載のデバイス。
- 前記凹部は、前記絶縁体層内に形成されている請求項17記載のデバイス。
- 前記III−N材料層の第1の部分は、第1の組成を有し、前記III−N材料層の第2の部分は、第2の組成を有し、前記第1の組成と前記第2の組成との間の相違が、前記III−N材料層内に2DEGチャネルを形成する請求項18記載のデバイス。
- カソードを更に備え、前記電極の一部は、アノードであり、前記アノードは、前記III−N材料層に実質的にショットキー接合し、前記カソードは、2DEGチャネルと電気的に接触する請求項19記載のデバイス。
- 前記凹部は、III−N材料層内に延び、前記電極は、前記III−N材料層内の前記凹部の一部にある請求項20記載のデバイス。
- 前記凹部は、2DEGチャネルを介して延びている請求項21記載のデバイス。
- 前記デバイスの第1の領域の閾値は、−15Vより大きく、前記第1の領域は、アノード領域と前記カソードとの間にあり、前記アノード領域に隣接している前記デバイスの一部を含む請求項22記載のデバイス。
- 前記絶縁層の厚さは、デバイス動作の間、約10μA/mmより大きい漏れ電流が前記絶縁層を流れることを防止するために十分な厚さである請求項22記載のデバイス。
- 前記III−N材料層の第1の部分は、第1の組成を有し、前記III−N材料層の第2の部分は、第2の組成を有し、前記第1の組成と前記第2の組成との間の差分によって、前記III−N材料層内に2DEGチャネルが形成される請求項1乃至5何れか1項記載のデバイス。
- ソース及びドレインを更に備え、前記電極の一部は、ゲートであり、前記ソース及び前記ドレインは、前記2DEGチャネルと電気的に接触している請求項25記載のデバイス。
- デバイス閾値電圧が約−30Vより大きい請求項26記載のデバイス。
- 前記絶縁層の厚さは、前記デバイス閾値電圧が約−30Vより大きくなる厚さである請求項27記載のデバイス。
- 前記絶縁層の厚さは、デバイス動作の間、約100μA/mmより大きい漏れ電流が前記絶縁層を流れることを防止するために十分な厚さである請求項27記載のデバイス。
- 前記電極画定層及び前記エッチング停止層は、第1の電極画定層及び第1のエッチング停止層であり、前記デバイスは、前記第1のエッチング停止層から反対側の前記第1の電極画定層上にスタックを更に有し、前記スタックは、第2のエッチング停止層及び第2の電極画定層を含む請求項1乃至5何れか1項記載のデバイス。
- 前記スタック内に凹部が形成され、前記電極の一部は、前記第1の電極画定層から反対側の前記スタック上にある請求項30記載のデバイス。
- 前記第1の電極画定層と前記第2のエッチング停止層との間に第2の絶縁層を更に備える請求項30記載のデバイス。
- 第2の電極を更に備え、前記第2の電極画定層及び前記第2のエッチング停止層内に第2の凹部が形成され、前記第2の電極は、前記第2の凹部内に形成されている請求項32記載のデバイス。
- 前記第2の電極は、前記第1の電極に電気的に接続されている請求項33記載のデバイス。
- 複数のスタックを更に備え、各スタック内に凹部が形成され、各凹部内に電極が形成されている請求項33記載のデバイス。
- 前記デバイスは、FETであり、デバイスが、約800V以下のソース−ドレインバイアスで、オフ状態からオン状態にスイッチされるときに測定される動的オン抵抗が、DCオン抵抗の1.4倍より小さい請求項1乃至5何れか1項記載のデバイス。
- 前記電極は、ゲート電極であり、前記デバイスは、ソース及びドレインを更に備える請求項1乃至5何れか1項記載のデバイス。
- 前記電極は、アノード電極であり、前記デバイスは、カソードを更に備える請求項1乃至5何れか1項記載のデバイス。
- 請求項1記載のデバイスを製造する方法において、
請求項1記載のデバイスのIII−N材料層の表面に絶縁層を設ける工程と、
前記絶縁層を設けた後に、前記絶縁層上にエッチング停止層を設ける工程と、
前記エッチング停止層を設けた後に、前記エッチング停止層に電極画定層を設ける工程と、
前記エッチング停止層より速いレートで、前記電極画定層をエッチングする選択性を有するエッチング液を用いて、前記電極画定層をエッチングして、少なくとも一部が、前記エッチング停止層の表面に垂直でない壁によって画定される凹部を形成する工程と、
前記凹部内及び前記電極画定層の露出部分に導電材料を堆積させる工程とを有する方法。 - 前記エッチング停止層をエッチングして、前記電極画定層内の前記凹部を前記絶縁層まで延ばす工程を更に有する請求項39記載の方法。
- 前記エッチング停止層のエッチングは、ウェットエッチングを含む請求項40記載の方法。
- 前記エッチング停止層をエッチングするために用いられるエッチングプロセスは、前記電極画定層又は前記絶縁層を実質的にエッチングしない請求項40又は41記載の方法。
- 前記エッチングプロセスは、前記絶縁層と比べて、約10:1以上の選択性で前記エッチング停止層をエッチングする請求項42記載の方法。
- 前記電極画定層のエッチングは、ドライエッチングを含む請求項39乃至41何れか1項記載の方法。
- 前記電極画定層のエッチングは、フッ素ベースのドライエッチングを適用することを含む請求項44記載の方法。
- 前記電極画定層のエッチングによって、前記電極画定層は、少なくとも一部が前記エッチング停止層の主面に対して非垂直の角度を形成する傾けられた壁を有するようになる請求項39乃至41何れか1項記載の方法。
- 前記非垂直な角度は、約5度から約85度までの間である請求項46記載の方法。
- 前記電極画定層をエッチングするために用いられるエッチングプロセスは、エッチング停止層を実質的にエッチングしない請求項39乃至41何れか1項記載の方法。
- 前記エッチングプロセスは、前記エッチング停止層と比べて、約10:1以上の選択性で前記電極画定層をエッチングする請求項48記載の方法。
- 前記デバイスは、エンハンスメントモードデバイスである請求項1乃至5何れか1項記載のデバイス。
- 前記デバイスは、空乏モードデバイスである請求項1乃至5何れか1項記載のデバイス。
- 前記デバイスは、FETであり、ドレインを更に備え、前記電極は、前記傾けられた壁の少なくとも一部の上に重なり、前記電極は、前記傾けられた壁の一部と前記ドレインとの間にある前記電極画定層の一部の上に重ならない請求項4又は5記載のデバイス。
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Families Citing this family (157)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7915643B2 (en) | 2007-09-17 | 2011-03-29 | Transphorm Inc. | Enhancement mode gallium nitride power devices |
US7965126B2 (en) | 2008-02-12 | 2011-06-21 | Transphorm Inc. | Bridge circuits and their components |
US8519438B2 (en) | 2008-04-23 | 2013-08-27 | Transphorm Inc. | Enhancement mode III-N HEMTs |
US8289065B2 (en) | 2008-09-23 | 2012-10-16 | Transphorm Inc. | Inductive load power switching circuits |
JP2010118556A (ja) * | 2008-11-13 | 2010-05-27 | Furukawa Electric Co Ltd:The | 半導体装置および半導体装置の製造方法 |
US7898004B2 (en) | 2008-12-10 | 2011-03-01 | Transphorm Inc. | Semiconductor heterostructure diodes |
US8742459B2 (en) | 2009-05-14 | 2014-06-03 | Transphorm Inc. | High voltage III-nitride semiconductor devices |
US8390000B2 (en) * | 2009-08-28 | 2013-03-05 | Transphorm Inc. | Semiconductor devices with field plates |
JP2011082216A (ja) | 2009-10-02 | 2011-04-21 | Fujitsu Ltd | 化合物半導体装置及びその製造方法 |
WO2011048800A1 (ja) * | 2009-10-23 | 2011-04-28 | パナソニック株式会社 | 半導体装置およびその製造方法 |
US8314471B2 (en) * | 2009-11-17 | 2012-11-20 | Diodes Incorporated | Trench devices having improved breakdown voltages and method for manufacturing same |
US8269259B2 (en) * | 2009-12-07 | 2012-09-18 | International Rectifier Corporation | Gated AlGaN/GaN heterojunction Schottky device |
US8389977B2 (en) | 2009-12-10 | 2013-03-05 | Transphorm Inc. | Reverse side engineered III-nitride devices |
US8809987B2 (en) * | 2010-07-06 | 2014-08-19 | The Hong Kong University Of Science And Technology | Normally-off III-nitride metal-2DEG tunnel junction field-effect transistors |
CN103168362B (zh) * | 2010-10-20 | 2016-10-12 | 富士通株式会社 | 半导体装置及其制造方法 |
KR102065115B1 (ko) * | 2010-11-05 | 2020-01-13 | 삼성전자주식회사 | E-모드를 갖는 고 전자 이동도 트랜지스터 및 그 제조방법 |
US8742460B2 (en) | 2010-12-15 | 2014-06-03 | Transphorm Inc. | Transistors with isolation regions |
US8643062B2 (en) * | 2011-02-02 | 2014-02-04 | Transphorm Inc. | III-N device structures and methods |
US8786327B2 (en) | 2011-02-28 | 2014-07-22 | Transphorm Inc. | Electronic components with reactive filters |
US8716141B2 (en) * | 2011-03-04 | 2014-05-06 | Transphorm Inc. | Electrode configurations for semiconductor devices |
US8772842B2 (en) * | 2011-03-04 | 2014-07-08 | Transphorm, Inc. | Semiconductor diodes with low reverse bias currents |
JP5689712B2 (ja) * | 2011-03-07 | 2015-03-25 | 株式会社日立製作所 | 半導体装置およびその製造方法 |
JP5694020B2 (ja) | 2011-03-18 | 2015-04-01 | トランスフォーム・ジャパン株式会社 | トランジスタ回路 |
JP5733623B2 (ja) * | 2011-06-10 | 2015-06-10 | 国立大学法人九州大学 | 半導体装置の製造方法 |
JP2014520405A (ja) | 2011-06-20 | 2014-08-21 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 電流アパーチャ垂直電子トランジスタ |
JP5872810B2 (ja) * | 2011-07-21 | 2016-03-01 | サンケン電気株式会社 | 窒化物半導体装置及びその製造方法 |
US9041255B2 (en) * | 2011-07-22 | 2015-05-26 | Moon J. Kim | High capacity electronic switch |
US8710511B2 (en) | 2011-07-29 | 2014-04-29 | Northrop Grumman Systems Corporation | AIN buffer N-polar GaN HEMT profile |
ITTO20120675A1 (it) * | 2011-08-01 | 2013-02-02 | Selex Sistemi Integrati Spa | Dispositivo phemt ad arricchimento/svuotamento e relativo metodo di fabbricazione |
TWI508281B (zh) * | 2011-08-01 | 2015-11-11 | Murata Manufacturing Co | Field effect transistor |
US8901604B2 (en) | 2011-09-06 | 2014-12-02 | Transphorm Inc. | Semiconductor devices with guard rings |
US9257547B2 (en) | 2011-09-13 | 2016-02-09 | Transphorm Inc. | III-N device structures having a non-insulating substrate |
US8598937B2 (en) | 2011-10-07 | 2013-12-03 | Transphorm Inc. | High power semiconductor electronic components with increased reliability |
KR101890749B1 (ko) * | 2011-10-27 | 2018-08-23 | 삼성전자주식회사 | 전극구조체, 이를 포함하는 질화갈륨계 반도체소자 및 이들의 제조방법 |
US8772901B2 (en) * | 2011-11-11 | 2014-07-08 | Alpha And Omega Semiconductor Incorporated | Termination structure for gallium nitride schottky diode |
US9070756B2 (en) * | 2011-11-18 | 2015-06-30 | Suzhou Institute Of Nano-Tech And Nano-Bionics Of Chinese Academy Of Sciences | Group III nitride high electron mobility transistor (HEMT) device |
JP5841417B2 (ja) * | 2011-11-30 | 2016-01-13 | 株式会社日立製作所 | 窒化物半導体ダイオード |
US20130146943A1 (en) * | 2011-12-12 | 2013-06-13 | John P. EDWARDS | In situ grown gate dielectric and field plate dielectric |
US10002957B2 (en) * | 2011-12-21 | 2018-06-19 | Power Integrations, Inc. | Shield wrap for a heterostructure field effect transistor |
JP2013149851A (ja) * | 2012-01-20 | 2013-08-01 | Sharp Corp | 窒化物半導体装置 |
US9165766B2 (en) | 2012-02-03 | 2015-10-20 | Transphorm Inc. | Buffer layer structures suited for III-nitride devices with foreign substrates |
WO2013155108A1 (en) | 2012-04-09 | 2013-10-17 | Transphorm Inc. | N-polar iii-nitride transistors |
US9136341B2 (en) | 2012-04-18 | 2015-09-15 | Rf Micro Devices, Inc. | High voltage field effect transistor finger terminations |
CN102709321A (zh) * | 2012-04-20 | 2012-10-03 | 程凯 | 增强型开关器件及其制造方法 |
US9337332B2 (en) * | 2012-04-25 | 2016-05-10 | Hrl Laboratories, Llc | III-Nitride insulating-gate transistors with passivation |
US9379195B2 (en) | 2012-05-23 | 2016-06-28 | Hrl Laboratories, Llc | HEMT GaN device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the same |
US10700201B2 (en) | 2012-05-23 | 2020-06-30 | Hrl Laboratories, Llc | HEMT GaN device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the same |
US9000484B2 (en) | 2012-05-23 | 2015-04-07 | Hrl Laboratories, Llc | Non-uniform lateral profile of two-dimensional electron gas charge density in type III nitride HEMT devices using ion implantation through gray scale mask |
WO2013176906A1 (en) * | 2012-05-23 | 2013-11-28 | Hrl Laboratories, Llc | Hemt device and method of manufacturing the same |
US8680536B2 (en) | 2012-05-23 | 2014-03-25 | Hrl Laboratories, Llc | Non-uniform two dimensional electron gas profile in III-Nitride HEMT devices |
US9443941B2 (en) * | 2012-06-04 | 2016-09-13 | Infineon Technologies Austria Ag | Compound semiconductor transistor with self aligned gate |
US10825924B2 (en) | 2012-06-26 | 2020-11-03 | Nxp Usa, Inc. | Semiconductor device with selectively etched surface passivation |
US10522670B2 (en) * | 2012-06-26 | 2019-12-31 | Nxp Usa, Inc. | Semiconductor device with selectively etched surface passivation |
US9184275B2 (en) | 2012-06-27 | 2015-11-10 | Transphorm Inc. | Semiconductor devices with integrated hole collectors |
US9124221B2 (en) | 2012-07-16 | 2015-09-01 | Rf Micro Devices, Inc. | Wide bandwidth radio frequency amplier having dual gate transistors |
US8803246B2 (en) | 2012-07-16 | 2014-08-12 | Transphorm Inc. | Semiconductor electronic components with integrated current limiters |
TWI500157B (zh) * | 2012-08-09 | 2015-09-11 | Univ Nat Central | 場效電晶體裝置及其製造方法 |
US9142620B2 (en) | 2012-08-24 | 2015-09-22 | Rf Micro Devices, Inc. | Power device packaging having backmetals couple the plurality of bond pads to the die backside |
US9202874B2 (en) | 2012-08-24 | 2015-12-01 | Rf Micro Devices, Inc. | Gallium nitride (GaN) device with leakage current-based over-voltage protection |
US9917080B2 (en) | 2012-08-24 | 2018-03-13 | Qorvo US. Inc. | Semiconductor device with electrical overstress (EOS) protection |
US8988097B2 (en) * | 2012-08-24 | 2015-03-24 | Rf Micro Devices, Inc. | Method for on-wafer high voltage testing of semiconductor devices |
US9147632B2 (en) | 2012-08-24 | 2015-09-29 | Rf Micro Devices, Inc. | Semiconductor device having improved heat dissipation |
US9070761B2 (en) | 2012-08-27 | 2015-06-30 | Rf Micro Devices, Inc. | Field effect transistor (FET) having fingers with rippled edges |
WO2014035794A1 (en) | 2012-08-27 | 2014-03-06 | Rf Micro Devices, Inc | Lateral semiconductor device with vertical breakdown region |
US9024324B2 (en) * | 2012-09-05 | 2015-05-05 | Freescale Semiconductor, Inc. | GaN dual field plate device with single field plate metal |
US10134727B2 (en) | 2012-09-28 | 2018-11-20 | Intel Corporation | High breakdown voltage III-N depletion mode MOS capacitors |
US9064709B2 (en) * | 2012-09-28 | 2015-06-23 | Intel Corporation | High breakdown voltage III-N depletion mode MOS capacitors |
EP2722890B1 (en) * | 2012-10-17 | 2020-12-16 | IMEC vzw | Schottky diode structure and method of fabrication |
KR101331650B1 (ko) * | 2012-10-29 | 2013-11-20 | 삼성전기주식회사 | 반도체 소자 |
US9325281B2 (en) | 2012-10-30 | 2016-04-26 | Rf Micro Devices, Inc. | Power amplifier controller |
US9171730B2 (en) | 2013-02-15 | 2015-10-27 | Transphorm Inc. | Electrodes for semiconductor devices and methods of forming the same |
CN103178104B (zh) * | 2013-02-20 | 2015-08-19 | 国网智能电网研究院 | 一种半导体器件多级场板终端结构及其制造方法 |
US8946779B2 (en) * | 2013-02-26 | 2015-02-03 | Freescale Semiconductor, Inc. | MISHFET and Schottky device integration |
TWI535007B (zh) * | 2013-03-13 | 2016-05-21 | 國立中央大學 | 半導體裝置與其之製造方法 |
US9087718B2 (en) | 2013-03-13 | 2015-07-21 | Transphorm Inc. | Enhancement-mode III-nitride devices |
US9245992B2 (en) | 2013-03-15 | 2016-01-26 | Transphorm Inc. | Carbon doping semiconductor devices |
US9245736B2 (en) | 2013-03-15 | 2016-01-26 | Semiconductor Components Industries, Llc | Process of forming a semiconductor wafer |
US9070705B2 (en) | 2013-03-15 | 2015-06-30 | Semiconductor Components Industries, Llc | HEMT semiconductor device and a process of forming the same |
US9059076B2 (en) | 2013-04-01 | 2015-06-16 | Transphorm Inc. | Gate drivers for circuits based on semiconductor devices |
US9142626B1 (en) * | 2013-04-23 | 2015-09-22 | Hrl Laboratories, Llc | Stepped field plate wide bandgap field-effect transistor and method |
US9552979B2 (en) * | 2013-05-31 | 2017-01-24 | Asm Ip Holding B.V. | Cyclic aluminum nitride deposition in a batch reactor |
WO2015006111A1 (en) | 2013-07-09 | 2015-01-15 | Transphorm Inc. | Multilevel inverters and their components |
JP6229172B2 (ja) * | 2013-07-12 | 2017-11-15 | パナソニックIpマネジメント株式会社 | 半導体装置 |
TWI513010B (zh) | 2013-07-18 | 2015-12-11 | Richtek Technology Corp | 接面能障蕭特基二極體及其製造方法 |
WO2015009514A1 (en) | 2013-07-19 | 2015-01-22 | Transphorm Inc. | Iii-nitride transistor including a p-type depleting layer |
JP6379358B2 (ja) * | 2013-07-25 | 2018-08-29 | パナソニックIpマネジメント株式会社 | 半導体装置 |
JP6338832B2 (ja) * | 2013-07-31 | 2018-06-06 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US9263569B2 (en) * | 2013-08-05 | 2016-02-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | MISFET device and method of forming the same |
JP6240460B2 (ja) * | 2013-10-02 | 2017-11-29 | トランスフォーム・ジャパン株式会社 | 電界効果型化合物半導体装置及びその製造方法 |
US9306014B1 (en) | 2013-12-27 | 2016-04-05 | Power Integrations, Inc. | High-electron-mobility transistors |
EP2930754A1 (en) * | 2014-04-11 | 2015-10-14 | Nxp B.V. | Semiconductor device |
US10276712B2 (en) | 2014-05-29 | 2019-04-30 | Hrl Laboratories, Llc | III-nitride field-effect transistor with dual gates |
US9455327B2 (en) | 2014-06-06 | 2016-09-27 | Qorvo Us, Inc. | Schottky gated transistor with interfacial layer |
US9543940B2 (en) | 2014-07-03 | 2017-01-10 | Transphorm Inc. | Switching circuits having ferrite beads |
US9590494B1 (en) | 2014-07-17 | 2017-03-07 | Transphorm Inc. | Bridgeless power factor correction circuits |
US9318593B2 (en) | 2014-07-21 | 2016-04-19 | Transphorm Inc. | Forming enhancement mode III-nitride devices |
US9536803B2 (en) | 2014-09-05 | 2017-01-03 | Qorvo Us, Inc. | Integrated power module with improved isolation and thermal conductivity |
US9571093B2 (en) | 2014-09-16 | 2017-02-14 | Navitas Semiconductor, Inc. | Half bridge driver circuits |
US9537338B2 (en) | 2014-09-16 | 2017-01-03 | Navitas Semiconductor Inc. | Level shift and inverter circuits for GaN devices |
US9960154B2 (en) | 2014-09-19 | 2018-05-01 | Navitas Semiconductor, Inc. | GaN structures |
CN104465795B (zh) * | 2014-11-19 | 2017-11-03 | 苏州捷芯威半导体有限公司 | 一种肖特基二极管及其制作方法 |
US11164970B2 (en) | 2014-11-25 | 2021-11-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Contact field plate |
US10756208B2 (en) | 2014-11-25 | 2020-08-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integrated chip and method of forming the same |
US9536967B2 (en) | 2014-12-16 | 2017-01-03 | Transphorm Inc. | Recessed ohmic contacts in a III-N device |
US9536966B2 (en) | 2014-12-16 | 2017-01-03 | Transphorm Inc. | Gate structures for III-N devices |
US10062684B2 (en) | 2015-02-04 | 2018-08-28 | Qorvo Us, Inc. | Transition frequency multiplier semiconductor device |
US10615158B2 (en) | 2015-02-04 | 2020-04-07 | Qorvo Us, Inc. | Transition frequency multiplier semiconductor device |
US9543402B1 (en) * | 2015-08-04 | 2017-01-10 | Power Integrations, Inc. | Integrated high performance lateral schottky diode |
US9812532B1 (en) | 2015-08-28 | 2017-11-07 | Hrl Laboratories, Llc | III-nitride P-channel transistor |
ITUB20155536A1 (it) | 2015-11-12 | 2017-05-12 | St Microelectronics Srl | Transistore hemt di tipo normalmente spento includente una trincea contenente una regione di gate e formante almeno un gradino, e relativo procedimento di fabbricazione |
CN108292678B (zh) | 2015-11-19 | 2021-07-06 | Hrl实验室有限责任公司 | 具有双栅极的iii族氮化物场效应晶体管 |
WO2017123999A1 (en) | 2016-01-15 | 2017-07-20 | Transphorm Inc. | Enhancement mode iii-nitride devices having an al(1-x)sixo gate insulator |
US9831867B1 (en) | 2016-02-22 | 2017-11-28 | Navitas Semiconductor, Inc. | Half bridge driver circuits |
JP6504313B2 (ja) * | 2016-03-14 | 2019-04-24 | 富士電機株式会社 | 半導体装置および製造方法 |
US9941398B2 (en) * | 2016-03-17 | 2018-04-10 | Taiwan Semiconductor Manufacturing Company Ltd. | High-electron-mobility transistor (HEMT) capable of protecting a III-V compound layer |
CN107230629A (zh) * | 2016-03-25 | 2017-10-03 | 北京大学 | 氮化镓场效应晶体管的制作方法及氮化镓场效应晶体管 |
US9722063B1 (en) * | 2016-04-11 | 2017-08-01 | Power Integrations, Inc. | Protective insulator for HFET devices |
US10651317B2 (en) | 2016-04-15 | 2020-05-12 | Macom Technology Solutions Holdings, Inc. | High-voltage lateral GaN-on-silicon Schottky diode |
US20170301780A1 (en) * | 2016-04-15 | 2017-10-19 | Macom Technology Solutions Holdings, Inc. | High-voltage gan high electron mobility transistors with reduced leakage current |
TWI762486B (zh) | 2016-05-31 | 2022-05-01 | 美商創世舫科技有限公司 | 包含漸變空乏層的三族氮化物裝置 |
JP6685870B2 (ja) * | 2016-09-15 | 2020-04-22 | 株式会社東芝 | 半導体装置 |
CN106711233B (zh) * | 2016-12-09 | 2020-07-24 | 清华大学 | 光调制的二极管和功率电路 |
TWI607565B (zh) | 2016-12-20 | 2017-12-01 | 新唐科技股份有限公司 | 半導體基底以及半導體元件 |
CN107331608B (zh) * | 2017-08-23 | 2020-11-24 | 成都海威华芯科技有限公司 | 一种双台阶t型栅的制作方法 |
US10630285B1 (en) | 2017-11-21 | 2020-04-21 | Transphorm Technology, Inc. | Switching circuits having drain connected ferrite beads |
US10950598B2 (en) | 2018-01-19 | 2021-03-16 | Macom Technology Solutions Holdings, Inc. | Heterolithic microwave integrated circuits including gallium-nitride devices formed on highly doped semiconductor |
US11233047B2 (en) | 2018-01-19 | 2022-01-25 | Macom Technology Solutions Holdings, Inc. | Heterolithic microwave integrated circuits including gallium-nitride devices on highly doped regions of intrinsic silicon |
US11056483B2 (en) | 2018-01-19 | 2021-07-06 | Macom Technology Solutions Holdings, Inc. | Heterolithic microwave integrated circuits including gallium-nitride devices on intrinsic semiconductor |
CN109786453B (zh) * | 2018-04-25 | 2022-05-17 | 苏州捷芯威半导体有限公司 | 半导体器件及其制作方法 |
US20190393041A1 (en) * | 2018-06-20 | 2019-12-26 | Intel Corporation | Methods of transistor gate structuring using single operation dummy gate removal |
CN109308999B (zh) * | 2018-09-29 | 2022-03-29 | 大连芯冠科技有限公司 | 选择性刻蚀制备功率器件多场板的方法 |
US10756207B2 (en) | 2018-10-12 | 2020-08-25 | Transphorm Technology, Inc. | Lateral III-nitride devices including a vertical gate module |
US10950497B2 (en) * | 2018-11-26 | 2021-03-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Electrical connection for semiconductor devices |
TWI680503B (zh) * | 2018-12-26 | 2019-12-21 | 杰力科技股份有限公司 | 氮化鎵高電子移動率電晶體的閘極結構的製造方法 |
US11121245B2 (en) * | 2019-02-22 | 2021-09-14 | Efficient Power Conversion Corporation | Field plate structures with patterned surface passivation layers and methods for manufacturing thereof |
CN113826206A (zh) | 2019-03-21 | 2021-12-21 | 创世舫科技有限公司 | Iii-氮化物器件的集成设计 |
WO2020214227A2 (en) | 2019-04-04 | 2020-10-22 | Hrl Laboratories, Llc | Miniature field plate t-gate and method of fabricating the same |
TWI719484B (zh) * | 2019-05-20 | 2021-02-21 | 世界先進積體電路股份有限公司 | 半導體結構 |
CN112216738A (zh) * | 2019-07-09 | 2021-01-12 | 台湾积体电路制造股份有限公司 | 集成芯片及其形成方法 |
CN112349773A (zh) * | 2019-08-07 | 2021-02-09 | 苏州能讯高能半导体有限公司 | 一种半导体器件及其制备方法 |
CN110828307A (zh) * | 2019-10-16 | 2020-02-21 | 中芯集成电路制造(绍兴)有限公司 | 形成具有倾斜侧壁的材料层的方法及半导体器件 |
US11695068B2 (en) | 2020-03-09 | 2023-07-04 | Insyt, Inc. | Greyscale lithography for double-slanted gate connected field plate |
US11848389B2 (en) * | 2020-03-19 | 2023-12-19 | Ohio State Innovation Foundation | Low turn on and high breakdown voltage lateral diode |
US11600614B2 (en) | 2020-03-26 | 2023-03-07 | Macom Technology Solutions Holdings, Inc. | Microwave integrated circuits including gallium-nitride devices on silicon |
US11749656B2 (en) | 2020-06-16 | 2023-09-05 | Transphorm Technology, Inc. | Module configurations for integrated III-Nitride devices |
JP2023537713A (ja) | 2020-08-05 | 2023-09-05 | トランスフォーム テクノロジー,インコーポレーテッド | 空乏層を有するiii族窒化物デバイス |
CN112038227A (zh) * | 2020-08-12 | 2020-12-04 | 深圳市汇芯通信技术有限公司 | 栅极无损伤制备方法及基于该制备方法的hemt |
TWI811562B (zh) * | 2020-08-18 | 2023-08-11 | 新唐科技股份有限公司 | 半導體裝置的製造方法 |
CN111952366A (zh) * | 2020-08-19 | 2020-11-17 | 深圳方正微电子有限公司 | 场效应晶体管及其制备方法 |
CN111952360B (zh) * | 2020-08-19 | 2023-02-21 | 深圳方正微电子有限公司 | 场效应管及其制备方法 |
CN111952355B (zh) * | 2020-08-21 | 2021-03-12 | 浙江大学 | 基于多漏指结构的GaN HEMT器件及其制备方法 |
CN112736132B (zh) * | 2021-01-06 | 2023-06-20 | 湖北文理学院 | InP PHEMT外延结构及其制备方法 |
US11682721B2 (en) * | 2021-01-20 | 2023-06-20 | Raytheon Company | Asymmetrically angled gate structure and method for making same |
JP7437346B2 (ja) * | 2021-04-15 | 2024-02-22 | 株式会社東芝 | 半導体装置及びその製造方法 |
CN113314405B (zh) * | 2021-05-26 | 2022-07-26 | 四川上特科技有限公司 | 半导体功率器件斜坡场板的制作方法 |
CN114613856B (zh) * | 2022-04-12 | 2023-04-25 | 电子科技大学 | 一种双异质结GaN RC-HEMT器件 |
WO2024092543A1 (en) * | 2022-11-02 | 2024-05-10 | Innoscience (suzhou) Semiconductor Co., Ltd. | Nitride-based semiconductor device and method for manufacturing the same |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60145670A (ja) * | 1984-01-10 | 1985-08-01 | Nec Corp | 半導体装置の製造方法 |
JP2000021900A (ja) * | 1998-06-30 | 2000-01-21 | Toshiba Corp | 電界効果トランジスタの製造方法 |
JP2008511172A (ja) * | 2004-08-25 | 2008-04-10 | フリースケール セミコンダクター インコーポレイテッド | 凹部形成された半導体デバイス |
JP2009503815A (ja) * | 2005-07-20 | 2009-01-29 | クリー インコーポレイテッド | 窒化物ベースのトランジスタおよびエッチストップ層を用いた製造方法 |
JP2009059946A (ja) * | 2007-08-31 | 2009-03-19 | Fujitsu Ltd | 化合物半導体装置およびその製造方法 |
JP2009076845A (ja) * | 2007-08-29 | 2009-04-09 | Sanken Electric Co Ltd | 電界効果半導体装置及びその製造方法 |
JP2009524242A (ja) * | 2006-01-17 | 2009-06-25 | クリー インコーポレイテッド | 支持されたゲート電極を備えるトランジスタの作製方法およびそれに関連するデバイス |
Family Cites Families (170)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4645562A (en) * | 1985-04-29 | 1987-02-24 | Hughes Aircraft Company | Double layer photoresist technique for side-wall profile control in plasma etching processes |
US4728826A (en) | 1986-03-19 | 1988-03-01 | Siemens Aktiengesellschaft | MOSFET switch with inductive load |
US4821093A (en) | 1986-08-18 | 1989-04-11 | The United States Of America As Represented By The Secretary Of The Army | Dual channel high electron mobility field effect transistor |
JPH07120807B2 (ja) | 1986-12-20 | 1995-12-20 | 富士通株式会社 | 定電流半導体装置 |
US5329147A (en) | 1993-01-04 | 1994-07-12 | Xerox Corporation | High voltage integrated flyback circuit in 2 μm CMOS |
US6097046A (en) | 1993-04-30 | 2000-08-01 | Texas Instruments Incorporated | Vertical field effect transistor and diode |
US5740192A (en) | 1994-12-19 | 1998-04-14 | Kabushiki Kaisha Toshiba | Semiconductor laser |
US5646069A (en) | 1995-06-07 | 1997-07-08 | Hughes Aircraft Company | Fabrication process for Alx In1-x As/Gay In1-y As power HFET ohmic contacts |
JPH09306926A (ja) * | 1996-05-10 | 1997-11-28 | Hitachi Ltd | 半導体装置およびその製造方法 |
JP3677350B2 (ja) | 1996-06-10 | 2005-07-27 | 三菱電機株式会社 | 半導体装置、及び半導体装置の製造方法 |
US6008684A (en) | 1996-10-23 | 1999-12-28 | Industrial Technology Research Institute | CMOS output buffer with CMOS-controlled lateral SCR devices |
US5714393A (en) | 1996-12-09 | 1998-02-03 | Motorola, Inc. | Diode-connected semiconductor device and method of manufacture |
US6316793B1 (en) | 1998-06-12 | 2001-11-13 | Cree, Inc. | Nitride based transistors on semi-insulating silicon carbide substrates |
JP3180776B2 (ja) * | 1998-09-22 | 2001-06-25 | 日本電気株式会社 | 電界効果型トランジスタ |
JP2000058871A (ja) | 1999-07-02 | 2000-02-25 | Citizen Watch Co Ltd | 電子機器の集積回路 |
US6984571B1 (en) | 1999-10-01 | 2006-01-10 | Ziptronix, Inc. | Three dimensional device integration method and integrated device |
US6586781B2 (en) | 2000-02-04 | 2003-07-01 | Cree Lighting Company | Group III nitride based FETs and HEMTs with reduced trapping and method for producing the same |
JP3751791B2 (ja) | 2000-03-28 | 2006-03-01 | 日本電気株式会社 | ヘテロ接合電界効果トランジスタ |
JP5130641B2 (ja) | 2006-03-31 | 2013-01-30 | サンケン電気株式会社 | 複合半導体装置 |
US6475889B1 (en) | 2000-04-11 | 2002-11-05 | Cree, Inc. | Method of forming vias in silicon carbide and resulting devices and circuits |
US7892974B2 (en) | 2000-04-11 | 2011-02-22 | Cree, Inc. | Method of forming vias in silicon carbide and resulting devices and circuits |
US7125786B2 (en) | 2000-04-11 | 2006-10-24 | Cree, Inc. | Method of forming vias in silicon carbide and resulting devices and circuits |
US6580101B2 (en) * | 2000-04-25 | 2003-06-17 | The Furukawa Electric Co., Ltd. | GaN-based compound semiconductor device |
US6624452B2 (en) | 2000-07-28 | 2003-09-23 | The Regents Of The University Of California | Gallium nitride-based HFET and a method for fabricating a gallium nitride-based HFET |
US6727531B1 (en) | 2000-08-07 | 2004-04-27 | Advanced Technology Materials, Inc. | Indium gallium nitride channel high electron mobility transistors, and method of making the same |
US6548333B2 (en) | 2000-12-01 | 2003-04-15 | Cree, Inc. | Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment |
TW466768B (en) | 2000-12-30 | 2001-12-01 | Nat Science Council | An In0.34Al0.66As0.85Sb0.15/InP HFET utilizing InP channels |
US6830976B2 (en) | 2001-03-02 | 2004-12-14 | Amberwave Systems Corproation | Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits |
US6849882B2 (en) * | 2001-05-11 | 2005-02-01 | Cree Inc. | Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer |
CA2454269C (en) | 2001-07-24 | 2015-07-07 | Primit Parikh | Insulating gate algan/gan hemt |
JP4177048B2 (ja) | 2001-11-27 | 2008-11-05 | 古河電気工業株式会社 | 電力変換装置及びそれに用いるGaN系半導体装置 |
US7030428B2 (en) | 2001-12-03 | 2006-04-18 | Cree, Inc. | Strain balanced nitride heterojunction transistors |
JP2003244943A (ja) | 2002-02-13 | 2003-08-29 | Honda Motor Co Ltd | 電源装置の昇圧装置 |
US7919791B2 (en) | 2002-03-25 | 2011-04-05 | Cree, Inc. | Doped group III-V nitride materials, and microelectronic devices and device precursor structures comprising same |
US6982204B2 (en) | 2002-07-16 | 2006-01-03 | Cree, Inc. | Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses |
WO2004019415A1 (en) | 2002-08-26 | 2004-03-04 | University Of Florida | GaN-TYPE ENHANCEMENT MOSFET USING HETERO STRUCTURE |
JP2006505169A (ja) | 2002-10-29 | 2006-02-09 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 双方向性2重nmosスイッチ |
JP4385205B2 (ja) | 2002-12-16 | 2009-12-16 | 日本電気株式会社 | 電界効果トランジスタ |
US7169634B2 (en) | 2003-01-15 | 2007-01-30 | Advanced Power Technology, Inc. | Design and fabrication of rugged FRED |
JP2004253620A (ja) * | 2003-02-20 | 2004-09-09 | Nec Compound Semiconductor Devices Ltd | 電界効果型トランジスタおよびその製造方法 |
JP2004260114A (ja) | 2003-02-27 | 2004-09-16 | Shin Etsu Handotai Co Ltd | 化合物半導体素子 |
US7112860B2 (en) | 2003-03-03 | 2006-09-26 | Cree, Inc. | Integrated nitride-based acoustic wave devices and methods of fabricating integrated nitride-based acoustic wave devices |
US6979863B2 (en) | 2003-04-24 | 2005-12-27 | Cree, Inc. | Silicon carbide MOSFETs with integrated antiparallel junction barrier Schottky free wheeling diodes and methods of fabricating the same |
US7078743B2 (en) | 2003-05-15 | 2006-07-18 | Matsushita Electric Industrial Co., Ltd. | Field effect transistor semiconductor device |
EP1665358B1 (en) | 2003-09-09 | 2020-07-01 | The Regents of The University of California | Fabrication of single or multiple gate field plates |
US7501669B2 (en) | 2003-09-09 | 2009-03-10 | Cree, Inc. | Wide bandgap transistor devices with field plates |
WO2005062745A2 (en) | 2003-10-10 | 2005-07-14 | The Regents Of The University Of California | GaN/AlGaN/GaN DISPERSION-FREE HIGH ELECTRON MOBILITY TRANSISTORS |
US7268375B2 (en) | 2003-10-27 | 2007-09-11 | Sensor Electronic Technology, Inc. | Inverted nitride-based semiconductor structure |
US6867078B1 (en) * | 2003-11-19 | 2005-03-15 | Freescale Semiconductor, Inc. | Method for forming a microwave field effect transistor with high operating voltage |
US7071498B2 (en) | 2003-12-17 | 2006-07-04 | Nitronex Corporation | Gallium nitride material devices including an electrode-defining layer and methods of forming the same |
US20050133816A1 (en) | 2003-12-19 | 2005-06-23 | Zhaoyang Fan | III-nitride quantum-well field effect transistors |
US7045404B2 (en) | 2004-01-16 | 2006-05-16 | Cree, Inc. | Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof |
US7901994B2 (en) | 2004-01-16 | 2011-03-08 | Cree, Inc. | Methods of manufacturing group III nitride semiconductor devices with silicon nitride layers |
US8174048B2 (en) | 2004-01-23 | 2012-05-08 | International Rectifier Corporation | III-nitride current control device and method of manufacture |
US7382001B2 (en) * | 2004-01-23 | 2008-06-03 | International Rectifier Corporation | Enhancement mode III-nitride FET |
US7612390B2 (en) | 2004-02-05 | 2009-11-03 | Cree, Inc. | Heterojunction transistors including energy barriers |
US7170111B2 (en) | 2004-02-05 | 2007-01-30 | Cree, Inc. | Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same |
US7465997B2 (en) | 2004-02-12 | 2008-12-16 | International Rectifier Corporation | III-nitride bidirectional switch |
US7550781B2 (en) | 2004-02-12 | 2009-06-23 | International Rectifier Corporation | Integrated III-nitride power devices |
US7084475B2 (en) | 2004-02-17 | 2006-08-01 | Velox Semiconductor Corporation | Lateral conduction Schottky diode with plural mesas |
WO2005081304A1 (ja) * | 2004-02-20 | 2005-09-01 | Nec Corporation | 電界効果トランジスタ |
US7573078B2 (en) * | 2004-05-11 | 2009-08-11 | Cree, Inc. | Wide bandgap transistors with multiple field plates |
US7550783B2 (en) | 2004-05-11 | 2009-06-23 | Cree, Inc. | Wide bandgap HEMTs with source connected field plates |
US7432142B2 (en) | 2004-05-20 | 2008-10-07 | Cree, Inc. | Methods of fabricating nitride-based transistors having regrown ohmic contact regions |
US7332795B2 (en) | 2004-05-22 | 2008-02-19 | Cree, Inc. | Dielectric passivation for semiconductor devices |
JP4810072B2 (ja) * | 2004-06-15 | 2011-11-09 | 株式会社東芝 | 窒素化合物含有半導体装置 |
WO2006001369A1 (ja) | 2004-06-24 | 2006-01-05 | Nec Corporation | 半導体装置 |
JP2006032552A (ja) | 2004-07-14 | 2006-02-02 | Toshiba Corp | 窒化物含有半導体装置 |
JP4744109B2 (ja) | 2004-07-20 | 2011-08-10 | トヨタ自動車株式会社 | 半導体装置とその製造方法 |
JP2006033723A (ja) | 2004-07-21 | 2006-02-02 | Sharp Corp | 電力制御用光結合素子およびこの電力制御用光結合素子を用いた電子機器 |
US7238560B2 (en) | 2004-07-23 | 2007-07-03 | Cree, Inc. | Methods of fabricating nitride-based transistors with a cap layer and a recessed gate |
US7265399B2 (en) | 2004-10-29 | 2007-09-04 | Cree, Inc. | Asymetric layout structures for transistors and methods of fabricating the same |
JP4650224B2 (ja) | 2004-11-19 | 2011-03-16 | 日亜化学工業株式会社 | 電界効果トランジスタ |
JP4637553B2 (ja) | 2004-11-22 | 2011-02-23 | パナソニック株式会社 | ショットキーバリアダイオード及びそれを用いた集積回路 |
US7456443B2 (en) | 2004-11-23 | 2008-11-25 | Cree, Inc. | Transistors having buried n-type and p-type regions beneath the source region |
US7709859B2 (en) | 2004-11-23 | 2010-05-04 | Cree, Inc. | Cap layers including aluminum nitride for nitride-based transistors |
US7161194B2 (en) | 2004-12-06 | 2007-01-09 | Cree, Inc. | High power density and/or linearity transistors |
US7834380B2 (en) | 2004-12-09 | 2010-11-16 | Panasonic Corporation | Field effect transistor and method for fabricating the same |
US7217960B2 (en) | 2005-01-14 | 2007-05-15 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device |
JP4845872B2 (ja) * | 2005-01-25 | 2011-12-28 | 富士通株式会社 | Mis構造を有する半導体装置及びその製造方法 |
US7429534B2 (en) | 2005-02-22 | 2008-09-30 | Sensor Electronic Technology, Inc. | Etching a nitride-based heterostructure |
US7253454B2 (en) | 2005-03-03 | 2007-08-07 | Cree, Inc. | High electron mobility transistor |
US11791385B2 (en) * | 2005-03-11 | 2023-10-17 | Wolfspeed, Inc. | Wide bandgap transistors with gate-source field plates |
US7321132B2 (en) | 2005-03-15 | 2008-01-22 | Lockheed Martin Corporation | Multi-layer structure for use in the fabrication of integrated circuit devices and methods for fabrication of same |
US7465967B2 (en) | 2005-03-15 | 2008-12-16 | Cree, Inc. | Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions |
US7439557B2 (en) | 2005-03-29 | 2008-10-21 | Coldwatt, Inc. | Semiconductor device having a lateral channel and contacts on opposing surfaces thereof |
JP4912604B2 (ja) | 2005-03-30 | 2012-04-11 | 住友電工デバイス・イノベーション株式会社 | 窒化物半導体hemtおよびその製造方法。 |
US7544963B2 (en) | 2005-04-29 | 2009-06-09 | Cree, Inc. | Binary group III-nitride based high electron mobility transistors |
US7615774B2 (en) | 2005-04-29 | 2009-11-10 | Cree.Inc. | Aluminum free group III-nitride based high electron mobility transistors |
US7364988B2 (en) | 2005-06-08 | 2008-04-29 | Cree, Inc. | Method of manufacturing gallium nitride based high-electron mobility devices |
US7326971B2 (en) | 2005-06-08 | 2008-02-05 | Cree, Inc. | Gallium nitride based high-electron mobility devices |
US7408399B2 (en) | 2005-06-27 | 2008-08-05 | International Rectifier Corporation | Active driving of normally on, normally off cascoded configuration devices through asymmetrical CMOS |
US7855401B2 (en) | 2005-06-29 | 2010-12-21 | Cree, Inc. | Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides |
KR101045573B1 (ko) | 2005-07-06 | 2011-07-01 | 인터내쇼널 렉티파이어 코포레이션 | Ⅲ족 질화물 인헨스먼트 모드 소자 |
JP4712459B2 (ja) | 2005-07-08 | 2011-06-29 | パナソニック株式会社 | トランジスタ及びその動作方法 |
JP4730529B2 (ja) | 2005-07-13 | 2011-07-20 | サンケン電気株式会社 | 電界効果トランジスタ |
US7548112B2 (en) | 2005-07-21 | 2009-06-16 | Cree, Inc. | Switch mode power amplifier using MIS-HEMT with field plate extension |
KR100610639B1 (ko) | 2005-07-22 | 2006-08-09 | 삼성전기주식회사 | 수직 구조 질화갈륨계 발광다이오드 소자 및 그 제조방법 |
JP4751150B2 (ja) | 2005-08-31 | 2011-08-17 | 株式会社東芝 | 窒化物系半導体装置 |
EP2312635B1 (en) | 2005-09-07 | 2020-04-01 | Cree, Inc. | Transistors with fluorine treatment |
JP2009509343A (ja) | 2005-09-16 | 2009-03-05 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | N極窒化アルミニウムガリウム/窒化ガリウムエンハンスメントモード電界効果トランジスタ |
US7482788B2 (en) | 2005-10-12 | 2009-01-27 | System General Corp. | Buck converter for both full load and light load operations |
US8114717B2 (en) | 2005-11-15 | 2012-02-14 | The Regents Of The University Of California | Methods to shape the electric field in electron devices, passivate dislocations and point defects, and enhance the luminescence efficiency of optical devices |
JP2007149794A (ja) | 2005-11-25 | 2007-06-14 | Matsushita Electric Ind Co Ltd | 電界効果トランジスタ |
US7932539B2 (en) | 2005-11-29 | 2011-04-26 | The Hong Kong University Of Science And Technology | Enhancement-mode III-N devices, circuits, and methods |
TW200723624A (en) | 2005-12-05 | 2007-06-16 | Univ Nat Chiao Tung | Process of producing group III nitride based reflectors |
KR100661602B1 (ko) | 2005-12-09 | 2006-12-26 | 삼성전기주식회사 | 수직 구조 질화갈륨계 led 소자의 제조방법 |
JP2007165446A (ja) | 2005-12-12 | 2007-06-28 | Oki Electric Ind Co Ltd | 半導体素子のオーミックコンタクト構造 |
US7419892B2 (en) | 2005-12-13 | 2008-09-02 | Cree, Inc. | Semiconductor devices including implanted regions and protective layers and methods of forming the same |
JP5065595B2 (ja) | 2005-12-28 | 2012-11-07 | 株式会社東芝 | 窒化物系半導体装置 |
JP5098649B2 (ja) | 2005-12-28 | 2012-12-12 | 日本電気株式会社 | 電界効果トランジスタ、ならびに、該電界効果トランジスタの作製に供される多層エピタキシャル膜 |
US7592211B2 (en) | 2006-01-17 | 2009-09-22 | Cree, Inc. | Methods of fabricating transistors including supported gate electrodes |
JP2007215331A (ja) | 2006-02-10 | 2007-08-23 | Hitachi Ltd | 昇圧回路 |
US7566918B2 (en) | 2006-02-23 | 2009-07-28 | Cree, Inc. | Nitride based transistors for millimeter wave operation |
JP2007242853A (ja) | 2006-03-08 | 2007-09-20 | Sanken Electric Co Ltd | 半導体基体及びこれを使用した半導体装置 |
EP1998376B1 (en) * | 2006-03-16 | 2011-08-03 | Fujitsu Ltd. | Compound semiconductor device and process for producing the same |
TW200742076A (en) | 2006-03-17 | 2007-11-01 | Sumitomo Chemical Co | Semiconductor field effect transistor and method of manufacturing the same |
WO2007109301A2 (en) | 2006-03-20 | 2007-09-27 | International Rectifier Corporation | Merged gate cascode transistor |
US7388236B2 (en) | 2006-03-29 | 2008-06-17 | Cree, Inc. | High efficiency and/or high power density wide bandgap transistors |
US7745851B2 (en) | 2006-04-13 | 2010-06-29 | Cree, Inc. | Polytype hetero-interface high electron mobility device and method of making |
US7629627B2 (en) | 2006-04-18 | 2009-12-08 | University Of Massachusetts | Field effect transistor with independently biased gates |
TW200830550A (en) * | 2006-08-18 | 2008-07-16 | Univ California | High breakdown enhancement mode gallium nitride based high electron mobility transistors with integrated slant field plate |
KR100782430B1 (ko) * | 2006-09-22 | 2007-12-05 | 한국과학기술원 | 고전력을 위한 내부전계전극을 갖는 갈륨나이트라이드기반의 고전자 이동도 트랜지스터 구조 |
JP5520432B2 (ja) * | 2006-10-03 | 2014-06-11 | 古河電気工業株式会社 | 半導体トランジスタの製造方法 |
JP4282708B2 (ja) | 2006-10-20 | 2009-06-24 | 株式会社東芝 | 窒化物系半導体装置 |
US7692263B2 (en) * | 2006-11-21 | 2010-04-06 | Cree, Inc. | High voltage GaN transistors |
JP5114947B2 (ja) | 2006-12-28 | 2013-01-09 | 富士通株式会社 | 窒化物半導体装置とその製造方法 |
JP2008199771A (ja) | 2007-02-13 | 2008-08-28 | Fujitsu Ten Ltd | 昇圧回路制御装置、及び昇圧回路 |
US7655962B2 (en) | 2007-02-23 | 2010-02-02 | Sensor Electronic Technology, Inc. | Enhancement mode insulated gate heterostructure field-effect transistor with electrically isolated RF-enhanced source contact |
US8110425B2 (en) | 2007-03-20 | 2012-02-07 | Luminus Devices, Inc. | Laser liftoff structure and related methods |
US7501670B2 (en) | 2007-03-20 | 2009-03-10 | Velox Semiconductor Corporation | Cascode circuit employing a depletion-mode, GaN-based FET |
JP2008243848A (ja) * | 2007-03-23 | 2008-10-09 | Sanken Electric Co Ltd | 半導体装置 |
US20090085065A1 (en) | 2007-03-29 | 2009-04-02 | The Regents Of The University Of California | Method to fabricate iii-n semiconductor devices on the n-face of layers which are grown in the iii-face direction using wafer bonding and substrate removal |
TWI467759B (zh) | 2007-03-29 | 2015-01-01 | Univ California | 具有低緩衝漏電及低寄生阻抗之氮面高電子遷移電晶體 |
FR2914500B1 (fr) | 2007-03-30 | 2009-11-20 | Picogiga Internat | Dispositif electronique a contact ohmique ameliore |
JP5292716B2 (ja) | 2007-03-30 | 2013-09-18 | 富士通株式会社 | 化合物半導体装置 |
US8318562B2 (en) * | 2007-04-02 | 2012-11-27 | University Of South Carolina | Method to increase breakdown voltage of semiconductor devices |
JP2008288289A (ja) | 2007-05-16 | 2008-11-27 | Oki Electric Ind Co Ltd | 電界効果トランジスタとその製造方法 |
JP4478175B2 (ja) | 2007-06-26 | 2010-06-09 | 株式会社東芝 | 半導体装置 |
CN101359686B (zh) | 2007-08-03 | 2013-01-02 | 香港科技大学 | 可靠的常关型ⅲ-氮化物有源器件结构及相关方法和系统 |
JP4775859B2 (ja) | 2007-08-24 | 2011-09-21 | シャープ株式会社 | 窒化物半導体装置とそれを含む電力変換装置 |
US7875537B2 (en) | 2007-08-29 | 2011-01-25 | Cree, Inc. | High temperature ion implantation of nitride based HEMTs |
EP2887402B1 (en) | 2007-09-12 | 2019-06-12 | Transphorm Inc. | III-nitride bidirectional switches |
US7795642B2 (en) | 2007-09-14 | 2010-09-14 | Transphorm, Inc. | III-nitride devices with recessed gates |
US20090075455A1 (en) | 2007-09-14 | 2009-03-19 | Umesh Mishra | Growing N-polar III-nitride Structures |
US7915643B2 (en) | 2007-09-17 | 2011-03-29 | Transphorm Inc. | Enhancement mode gallium nitride power devices |
US20090072269A1 (en) | 2007-09-17 | 2009-03-19 | Chang Soo Suh | Gallium nitride diodes and integrated components |
JP2009117485A (ja) * | 2007-11-02 | 2009-05-28 | Panasonic Corp | 窒化物半導体装置 |
US8431962B2 (en) * | 2007-12-07 | 2013-04-30 | Northrop Grumman Systems Corporation | Composite passivation process for nitride FET |
CN101897029B (zh) | 2007-12-10 | 2015-08-12 | 特兰斯夫公司 | 绝缘栅e模式晶体管 |
US7965126B2 (en) | 2008-02-12 | 2011-06-21 | Transphorm Inc. | Bridge circuits and their components |
US8674407B2 (en) | 2008-03-12 | 2014-03-18 | Renesas Electronics Corporation | Semiconductor device using a group III nitride-based semiconductor |
US8519438B2 (en) | 2008-04-23 | 2013-08-27 | Transphorm Inc. | Enhancement mode III-N HEMTs |
US7985986B2 (en) | 2008-07-31 | 2011-07-26 | Cree, Inc. | Normally-off semiconductor devices |
TWI371163B (en) | 2008-09-12 | 2012-08-21 | Glacialtech Inc | Unidirectional mosfet and applications thereof |
US8289065B2 (en) | 2008-09-23 | 2012-10-16 | Transphorm Inc. | Inductive load power switching circuits |
US7898004B2 (en) | 2008-12-10 | 2011-03-01 | Transphorm Inc. | Semiconductor heterostructure diodes |
US7884394B2 (en) | 2009-02-09 | 2011-02-08 | Transphorm Inc. | III-nitride devices and circuits |
US8742459B2 (en) | 2009-05-14 | 2014-06-03 | Transphorm Inc. | High voltage III-nitride semiconductor devices |
US8390000B2 (en) * | 2009-08-28 | 2013-03-05 | Transphorm Inc. | Semiconductor devices with field plates |
US8138529B2 (en) | 2009-11-02 | 2012-03-20 | Transphorm Inc. | Package configurations for low EMI circuits |
US8389977B2 (en) | 2009-12-10 | 2013-03-05 | Transphorm Inc. | Reverse side engineered III-nitride devices |
US8816497B2 (en) | 2010-01-08 | 2014-08-26 | Transphorm Inc. | Electronic devices and components for high efficiency power circuits |
US8624662B2 (en) | 2010-02-05 | 2014-01-07 | Transphorm Inc. | Semiconductor electronic components and circuits |
US20120126239A1 (en) | 2010-11-24 | 2012-05-24 | Transphorm Inc. | Layer structures for controlling stress of heteroepitaxially grown iii-nitride layers |
US8742460B2 (en) | 2010-12-15 | 2014-06-03 | Transphorm Inc. | Transistors with isolation regions |
US8643062B2 (en) | 2011-02-02 | 2014-02-04 | Transphorm Inc. | III-N device structures and methods |
US8786327B2 (en) | 2011-02-28 | 2014-07-22 | Transphorm Inc. | Electronic components with reactive filters |
US8716141B2 (en) | 2011-03-04 | 2014-05-06 | Transphorm Inc. | Electrode configurations for semiconductor devices |
US8772842B2 (en) | 2011-03-04 | 2014-07-08 | Transphorm, Inc. | Semiconductor diodes with low reverse bias currents |
-
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- 2009-08-28 US US12/550,140 patent/US8390000B2/en active Active
-
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- 2010-08-20 CN CN201080048522.9A patent/CN102598275B/zh active Active
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- 2010-08-24 TW TW099128303A patent/TWI555199B/zh active
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Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60145670A (ja) * | 1984-01-10 | 1985-08-01 | Nec Corp | 半導体装置の製造方法 |
JP2000021900A (ja) * | 1998-06-30 | 2000-01-21 | Toshiba Corp | 電界効果トランジスタの製造方法 |
JP2008511172A (ja) * | 2004-08-25 | 2008-04-10 | フリースケール セミコンダクター インコーポレイテッド | 凹部形成された半導体デバイス |
JP2009503815A (ja) * | 2005-07-20 | 2009-01-29 | クリー インコーポレイテッド | 窒化物ベースのトランジスタおよびエッチストップ層を用いた製造方法 |
JP2009524242A (ja) * | 2006-01-17 | 2009-06-25 | クリー インコーポレイテッド | 支持されたゲート電極を備えるトランジスタの作製方法およびそれに関連するデバイス |
JP2009076845A (ja) * | 2007-08-29 | 2009-04-09 | Sanken Electric Co Ltd | 電界効果半導体装置及びその製造方法 |
JP2009059946A (ja) * | 2007-08-31 | 2009-03-19 | Fujitsu Ltd | 化合物半導体装置およびその製造方法 |
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US20110049526A1 (en) | 2011-03-03 |
US8390000B2 (en) | 2013-03-05 |
WO2011031431A2 (en) | 2011-03-17 |
US20140162421A1 (en) | 2014-06-12 |
US20150187893A1 (en) | 2015-07-02 |
EP2471100A2 (en) | 2012-07-04 |
CN102598275B (zh) | 2014-12-24 |
US9111961B2 (en) | 2015-08-18 |
JP2013503483A (ja) | 2013-01-31 |
EP2471100B1 (en) | 2019-05-08 |
CN104576742B (zh) | 2018-01-23 |
TW201711196A (zh) | 2017-03-16 |
EP2471100A4 (en) | 2013-04-10 |
JP5905390B2 (ja) | 2016-04-20 |
JP6246849B2 (ja) | 2017-12-13 |
CN102598275A (zh) | 2012-07-18 |
US9373699B2 (en) | 2016-06-21 |
TWI609488B (zh) | 2017-12-21 |
US8692294B2 (en) | 2014-04-08 |
CN104576742A (zh) | 2015-04-29 |
US20130200435A1 (en) | 2013-08-08 |
TWI555199B (zh) | 2016-10-21 |
US20160293747A1 (en) | 2016-10-06 |
WO2011031431A3 (en) | 2011-07-07 |
TW201119033A (en) | 2011-06-01 |
US9831315B2 (en) | 2017-11-28 |
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