JP2006505169A - 双方向性2重nmosスイッチ - Google Patents
双方向性2重nmosスイッチ Download PDFInfo
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- JP2006505169A JP2006505169A JP2004547845A JP2004547845A JP2006505169A JP 2006505169 A JP2006505169 A JP 2006505169A JP 2004547845 A JP2004547845 A JP 2004547845A JP 2004547845 A JP2004547845 A JP 2004547845A JP 2006505169 A JP2006505169 A JP 2006505169A
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- Prior art keywords
- semiconductor switch
- gate
- voltage
- coupled
- switch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
- H03K17/6874—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/06—Modifications for ensuring a fully conducting state
- H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
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- Electronic Switches (AREA)
Abstract
Description
Claims (8)
- 非直列配置で結合される2つのMOSトランジスタと、
前記MOSトランジスタの両方のゲートに結合されるゲート制御回路と、を備え、
前記MOSトランジスタは、NチャンネルMOSトランジスタとして具体化され、
前記MOSトランジスタの両方のドレインは、相互接続され、
前記ゲート制御回路は、相互接続された前記ドレインに結合される、ことを特徴とする半導体スイッチ。 - 少なくとも一方の前記MOSトランジスタのゲートとソースの間に結合される電圧制限回路を更に備えることを特徴とする請求項1に記載の半導体スイッチ。
- 前記電圧制限回路は、半導体手段を備えることを特徴とする請求項2に記載の半導体スイッチ。
- 前記半導体手段は、NMOSトランジスタであることを特徴とする請求項3に記載の半導体スイッチ。
- 前記ゲート制御回路は、2フェイズのゲートポンプ電圧増幅動作を行うために配置されていることを特徴とする請求項1に記載の半導体スイッチ。
- 前記ゲート制御回路は、スイッチキャパシタ手段を備えることを特徴とする請求項6に記載の半導体スイッチ。
- 前記2フェイズのゲートポンプ電圧増幅動作は、約15〜200KHz、好ましくは約50KHzの、可変チャージポンプ周波数を有することを特徴とする請求項5または請求項6に記載の半導体スイッチ。
- 2つの電気回路を備えるシステムであって、
請求項1または請求項2に記載の半導体スイッチを備え、
前記半導体スイッチは、前記2つの電気回路の間に相互接続される、ことを特徴とするシステム。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP02079526 | 2002-10-29 | ||
PCT/IB2003/004234 WO2004040761A1 (en) | 2002-10-29 | 2003-09-22 | Bi-directional double nmos switch |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2006505169A true JP2006505169A (ja) | 2006-02-09 |
Family
ID=32187221
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004547845A Pending JP2006505169A (ja) | 2002-10-29 | 2003-09-22 | 双方向性2重nmosスイッチ |
Country Status (7)
Country | Link |
---|---|
US (1) | US7199640B2 (ja) |
EP (1) | EP1559194A1 (ja) |
JP (1) | JP2006505169A (ja) |
KR (1) | KR20050061574A (ja) |
CN (1) | CN100372231C (ja) |
AU (1) | AU2003263510A1 (ja) |
WO (1) | WO2004040761A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013524713A (ja) * | 2010-04-12 | 2013-06-17 | サピエンス ステアリング ブレイン スティムレーション ベー ヴィ | 双方向スイッチシステム、双方向スイッチ、スイッチングマトリックスおよび医療用刺激装置を制御する制御回路構造ならびに方法 |
JP2017028639A (ja) * | 2015-07-28 | 2017-02-02 | 新電元工業株式会社 | 半導体リレーモジュール |
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US9257547B2 (en) | 2011-09-13 | 2016-02-09 | Transphorm Inc. | III-N device structures having a non-insulating substrate |
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2003
- 2003-09-22 US US10/532,922 patent/US7199640B2/en not_active Expired - Fee Related
- 2003-09-22 WO PCT/IB2003/004234 patent/WO2004040761A1/en active Application Filing
- 2003-09-22 CN CNB038247623A patent/CN100372231C/zh not_active Expired - Fee Related
- 2003-09-22 KR KR1020057007347A patent/KR20050061574A/ko not_active Application Discontinuation
- 2003-09-22 JP JP2004547845A patent/JP2006505169A/ja active Pending
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- 2003-09-22 AU AU2003263510A patent/AU2003263510A1/en not_active Abandoned
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013524713A (ja) * | 2010-04-12 | 2013-06-17 | サピエンス ステアリング ブレイン スティムレーション ベー ヴィ | 双方向スイッチシステム、双方向スイッチ、スイッチングマトリックスおよび医療用刺激装置を制御する制御回路構造ならびに方法 |
JP2017028639A (ja) * | 2015-07-28 | 2017-02-02 | 新電元工業株式会社 | 半導体リレーモジュール |
Also Published As
Publication number | Publication date |
---|---|
KR20050061574A (ko) | 2005-06-22 |
US20060043499A1 (en) | 2006-03-02 |
AU2003263510A1 (en) | 2004-05-25 |
US7199640B2 (en) | 2007-04-03 |
EP1559194A1 (en) | 2005-08-03 |
CN100372231C (zh) | 2008-02-27 |
CN1695300A (zh) | 2005-11-09 |
WO2004040761A1 (en) | 2004-05-13 |
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