JP4901445B2 - 駆動回路及びこれを用いた半導体装置 - Google Patents
駆動回路及びこれを用いた半導体装置 Download PDFInfo
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- JP4901445B2 JP4901445B2 JP2006329435A JP2006329435A JP4901445B2 JP 4901445 B2 JP4901445 B2 JP 4901445B2 JP 2006329435 A JP2006329435 A JP 2006329435A JP 2006329435 A JP2006329435 A JP 2006329435A JP 4901445 B2 JP4901445 B2 JP 4901445B2
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- transistor
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- 239000004065 semiconductor Substances 0.000 title claims description 11
- 230000005669 field effect Effects 0.000 claims description 28
- 239000003990 capacitor Substances 0.000 description 11
- 230000004044 response Effects 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000007599 discharging Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
- H03K19/018507—Interface arrangements
- H03K19/018521—Interface arrangements of complementary type, e.g. CMOS
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
- H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/06—Modifications for ensuring a fully conducting state
- H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
- H03K19/0948—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET using CMOS or complementary insulated gate field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0027—Measuring means of, e.g. currents through or voltages across the switch
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0036—Means reducing energy consumption
Description
P1、P2 Pチャネル型電界効果トランジスタ
N1、N2 Nチャネル型電界効果トランジスタ
ZD1、ZD2 ツェナダイオード(クランプ素子)
IL1、IL2 電流制限部
R1、R2 抵抗
C1、C2 容量
T1 外部端子(上側ゲート制御端子)
T2 外部端子(出力端子)
T3 外部端子(下側ゲート制御端子)
Q1 Nチャネル型電界効果トランジスタ(上側出力トランジスタ)
Q2 Nチャネル型電界効果トランジスタ(下側出力トランジスタ)
VCC 電源電圧
VCP 昇圧電圧
Claims (5)
- 電源電圧よりも高い昇圧電圧の印加端と接地端との間に直列接続された一対のスイッチ素子と、両スイッチ素子の接続ノードと出力端との間に接続されたクランプ素子と、を有して成り、両スイッチ素子の接続ノードから引き出される電圧信号に基づいて、電源電圧の印加端と前記出力端との間に接続されたNチャネル型の出力トランジスタを駆動する駆動回路であって、
前記両スイッチ素子の接続ノードと前記昇圧電圧の印加端及び前記接地端とを結ぶ電流経路の少なくとも一方に、抵抗と容量を並列接続して成る電流制限部を挿入して成り、
前記出力トランジスタは、ドレインが前記電源電圧の印加端に接続されてソースが前記出力端に接続されており、
前記クランプ素子は、前記両スイッチ素子の接続ノードと前記出力トランジスタのソースとの間に接続されていることを特徴とする駆動回路。 - 前記クランプ素子は、ツェナダイオードであることを特徴とする請求項1に記載の駆動回路。
- 前記一対のスイッチ素子は、ソースが前記昇圧電圧の印加端に接続された第1のPチャネル型電界効果トランジスタ、並びに、ソースが前記接地端に接続され、ドレインが第1のPチャネル型電界効果トランジスタのドレインに接続された第1のNチャネル型電界効果トランジスタであることを特徴とする請求項2に記載の駆動回路。
- ソースが前記昇圧電圧の印加端に接続された第2のPチャネル型電界効果トランジスタと;ソースが前記出力端に接続され、ドレインが第2のPチャネル型電界効果トランジスタのドレインに接続され、ゲートが第1のPチャネル型電界効果トランジスタと第1のNチャネル型電界効果トランジスタとの接続ノードに接続された第2のNチャネル型電界効果トランジスタと;を有して成り、前記出力トランジスタのゲート信号として、第2のPチャネル型電界効果トランジスタと第2のNチャネル型電界効果トランジスタとの接続ノードから引き出される電圧信号を出力することを特徴とする請求項3に記載の駆動回路。
- 請求項1〜請求項4のいずれかに記載の駆動回路を集積化して成ることを特徴とする半導体装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006329435A JP4901445B2 (ja) | 2006-12-06 | 2006-12-06 | 駆動回路及びこれを用いた半導体装置 |
CN2007800089032A CN101401307B (zh) | 2006-12-06 | 2007-11-30 | 驱动器电路和使用该驱动器电路的半导体装置 |
PCT/JP2007/073181 WO2008069129A1 (ja) | 2006-12-06 | 2007-11-30 | 駆動回路及びこれを用いた半導体装置 |
US12/281,031 US7759985B2 (en) | 2006-12-06 | 2007-11-30 | Driver circuit and semiconductor device using the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006329435A JP4901445B2 (ja) | 2006-12-06 | 2006-12-06 | 駆動回路及びこれを用いた半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008147755A JP2008147755A (ja) | 2008-06-26 |
JP4901445B2 true JP4901445B2 (ja) | 2012-03-21 |
Family
ID=39492025
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006329435A Active JP4901445B2 (ja) | 2006-12-06 | 2006-12-06 | 駆動回路及びこれを用いた半導体装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7759985B2 (ja) |
JP (1) | JP4901445B2 (ja) |
CN (1) | CN101401307B (ja) |
WO (1) | WO2008069129A1 (ja) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7982501B2 (en) * | 2005-05-16 | 2011-07-19 | Altera Corporation | Low-power routing multiplexers |
CN101814842A (zh) * | 2009-02-24 | 2010-08-25 | 飞思卡尔半导体公司 | 具有可调整驱动电流的高频电源开关电路 |
US8618784B2 (en) * | 2009-04-10 | 2013-12-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Regulator control circuits, switching regulators, systems, and methods for operating switching regulators |
JP5476028B2 (ja) * | 2009-04-17 | 2014-04-23 | 株式会社日立製作所 | パワー半導体スイッチング素子のゲート駆動回路及びインバータ回路 |
JP5753483B2 (ja) * | 2011-12-01 | 2015-07-22 | 株式会社東芝 | 半導体集積回路、および、dc−dcコンバータ |
US9479058B2 (en) * | 2013-06-28 | 2016-10-25 | Broadcom Corporation | Power supply regulator |
US9007103B2 (en) * | 2013-08-01 | 2015-04-14 | Infineon Technologies Austria Ag | Switch circuit arrangements and method for powering a driver circuit |
US8947154B1 (en) * | 2013-10-03 | 2015-02-03 | Avogy, Inc. | Method and system for operating gallium nitride electronics |
US9035687B2 (en) * | 2013-10-09 | 2015-05-19 | Infineon Technologies Ag | Gate clamping |
JP6483997B2 (ja) | 2014-10-10 | 2019-03-13 | ローム株式会社 | パワー半導体駆動回路、パワー半導体回路、及びパワーモジュール回路装置 |
WO2016167015A1 (ja) * | 2015-04-15 | 2016-10-20 | シャープ株式会社 | 半導体装置および複合型半導体装置 |
US9621032B2 (en) * | 2015-07-30 | 2017-04-11 | Micron Technology, Inc. | Generation of voltages |
JP6794634B2 (ja) * | 2016-02-26 | 2020-12-02 | セイコーエプソン株式会社 | 駆動回路および液体吐出装置 |
JP6378230B2 (ja) | 2016-03-15 | 2018-08-22 | 株式会社東芝 | 半導体装置 |
US10084448B2 (en) * | 2016-06-08 | 2018-09-25 | Eridan Communications, Inc. | Driver interface methods and apparatus for switch-mode power converters, switch-mode power amplifiers, and other switch-based circuits |
FR3058852B1 (fr) * | 2016-11-14 | 2018-12-07 | Ratier Figeac | Dispositif de codage d'informations entre une pluralite d'interrupteurs d'un levier de manœuvre et un dispositif de commande |
CN108134510B (zh) * | 2016-12-01 | 2020-10-27 | 上海汽车集团股份有限公司 | Igbt驱动电路 |
US10778213B2 (en) * | 2017-10-05 | 2020-09-15 | Rohm Co., Ltd. | Driving circuit for output transistor |
WO2019116825A1 (ja) * | 2017-12-12 | 2019-06-20 | ローム株式会社 | ゲート駆動回路 |
KR102382253B1 (ko) * | 2018-10-30 | 2022-04-01 | 주식회사 엘지에너지솔루션 | 메인 스위치를 위한 드라이버 회로 및 그것을 포함하는 제어 장치 |
JP6744935B2 (ja) * | 2019-02-15 | 2020-08-19 | ローム株式会社 | パワー半導体駆動回路、パワー半導体回路、及びパワーモジュール回路装置 |
EP3806333A1 (en) * | 2019-10-08 | 2021-04-14 | Delta Electronics, Inc. | Gate-driving circuit |
CN113556036B (zh) * | 2020-04-21 | 2022-11-29 | 圣邦微电子(北京)股份有限公司 | H桥驱动电路、控制方法及驱动电机 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS59195840A (ja) * | 1983-04-21 | 1984-11-07 | Toshiba Corp | 半導体装置の製造方法 |
JPS59195840U (ja) * | 1983-06-13 | 1984-12-26 | 日産自動車株式会社 | 負荷駆動回路 |
JPH1168534A (ja) | 1997-08-25 | 1999-03-09 | Sony Corp | 高電圧駆動回路 |
JP3752943B2 (ja) | 2000-01-31 | 2006-03-08 | 株式会社日立製作所 | 半導体素子の駆動装置及びその制御方法 |
JP3779904B2 (ja) * | 2001-10-05 | 2006-05-31 | 三菱電機株式会社 | レベルシフト回路 |
US7088150B2 (en) * | 2003-12-05 | 2006-08-08 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Driver-side current clamping with non-persistent charge boost |
CN100405738C (zh) * | 2004-07-09 | 2008-07-23 | 清华大学 | 逆阻式绝缘栅双极型晶体管的驱动保护电路 |
CN2792013Y (zh) * | 2004-12-03 | 2006-06-28 | 深圳市核达中远通电源技术有限公司 | 有源嵌位驱动电路及其反向功率晶体管保护电路 |
US7368957B2 (en) * | 2006-07-21 | 2008-05-06 | Picor Corporation | Capacitively coupled floating gate driver |
-
2006
- 2006-12-06 JP JP2006329435A patent/JP4901445B2/ja active Active
-
2007
- 2007-11-30 WO PCT/JP2007/073181 patent/WO2008069129A1/ja active Application Filing
- 2007-11-30 CN CN2007800089032A patent/CN101401307B/zh not_active Expired - Fee Related
- 2007-11-30 US US12/281,031 patent/US7759985B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US7759985B2 (en) | 2010-07-20 |
JP2008147755A (ja) | 2008-06-26 |
WO2008069129A1 (ja) | 2008-06-12 |
US20090033405A1 (en) | 2009-02-05 |
CN101401307A (zh) | 2009-04-01 |
CN101401307B (zh) | 2011-09-14 |
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