JP2015002177A - アレイ基板及びこれを含む有機発光表示装置 - Google Patents
アレイ基板及びこれを含む有機発光表示装置 Download PDFInfo
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- JP2015002177A JP2015002177A JP2014122154A JP2014122154A JP2015002177A JP 2015002177 A JP2015002177 A JP 2015002177A JP 2014122154 A JP2014122154 A JP 2014122154A JP 2014122154 A JP2014122154 A JP 2014122154A JP 2015002177 A JP2015002177 A JP 2015002177A
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- 239000000758 substrate Substances 0.000 title claims abstract description 216
- 238000005520 cutting process Methods 0.000 claims description 27
- 239000004065 semiconductor Substances 0.000 claims description 22
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 16
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 16
- 239000011159 matrix material Substances 0.000 claims description 8
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 238000009413 insulation Methods 0.000 abstract 4
- 239000010408 film Substances 0.000 description 274
- 239000010410 layer Substances 0.000 description 141
- 239000000463 material Substances 0.000 description 44
- 230000004888 barrier function Effects 0.000 description 33
- 238000007789 sealing Methods 0.000 description 33
- 239000011229 interlayer Substances 0.000 description 23
- 230000004048 modification Effects 0.000 description 21
- 238000012986 modification Methods 0.000 description 21
- 239000004642 Polyimide Substances 0.000 description 12
- 229920001721 polyimide Polymers 0.000 description 12
- 229910010272 inorganic material Inorganic materials 0.000 description 11
- 239000011147 inorganic material Substances 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 10
- 239000010409 thin film Substances 0.000 description 10
- 239000010949 copper Substances 0.000 description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 8
- 239000011651 chromium Substances 0.000 description 8
- 229910052750 molybdenum Inorganic materials 0.000 description 8
- 239000011733 molybdenum Substances 0.000 description 8
- 239000012044 organic layer Substances 0.000 description 8
- 239000011368 organic material Substances 0.000 description 8
- 239000011241 protective layer Substances 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 238000007689 inspection Methods 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 230000000704 physical effect Effects 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- 239000003566 sealing material Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 229910001316 Ag alloy Inorganic materials 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- 229910000881 Cu alloy Inorganic materials 0.000 description 3
- 229910001182 Mo alloy Inorganic materials 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 3
- 239000004952 Polyamide Substances 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- UHESRSKEBRADOO-UHFFFAOYSA-N ethyl carbamate;prop-2-enoic acid Chemical compound OC(=O)C=C.CCOC(N)=O UHESRSKEBRADOO-UHFFFAOYSA-N 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
- H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/145—Organic substrates, e.g. plastic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/562—Protection against mechanical damage
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
Abstract
Description
非表示領域NDAは、基板10、基板10上に配置されるバリアー層11、バリアー層11上に配置されるバッファ層12、バッファ層12上に配置される第1絶縁膜25、第1絶縁膜25上に配置される第2絶縁膜35、第1絶縁膜25と第2絶縁膜35との間に介在するか、または第2絶縁膜35上に配置され、互いに離隔して基板10の一側に向かって延在するように形成される複数個の配線パターン、第2絶縁膜35の上面から所定深さで窪んで、基板10の上面を少なくとも部分的に露出させる凹パターン及び第2絶縁膜35上に配置され、上記の凹パターンによって露出される基板10の上面を少なくとも部分的に露出させる有機絶縁膜75を備えるアレイ基板並びにアレイ基板上に配置される封止部材を含む。
10 基板
11 バリアー層
12 バッファ層
20 ゲート絶縁膜
25 第1絶縁膜
30 層間絶縁膜
31 第1サブ絶縁膜
32 第2サブ絶縁膜
35、35’ 第2絶縁膜
40 半導体層
45 セルIDパターン
46 十字架状の図形
50 ゲート線
51 ゲート電極
55 ゲートパッド
60 データ線
61 ソース電極
62 ドレイン電極
70 平坦化膜
71 第1コンタクトホール
72 コンタクト部
75 有機絶縁膜
80 第1電極
90 画素定義膜
91 有機層
92 第2電極
100 アレイ基板
200 スキャンドライバ
300 エミッションドライバ
401、411、421 配線ライン部
402 配線パッド部
403 配線接続部
500、501、503、504、505、506、507、508 凹パターン
502 凹溝
700 切断線
800 封止基板
801 導電膜
803 封止膜
Claims (15)
- 基板と、
前記基板上に配置されるバッファ層と、
前記バッファ層上に配置される第1絶縁膜と、
前記第1絶縁膜上に配置される第2絶縁膜と、
前記第2絶縁膜上に互いに離隔して配置される複数個の配線パターンと、
前記配線パターンと隣接するように配置される凹パターンと、
を備えるアレイ基板。 - 基板の上面は、前記凹パターンによって露出される、請求項1に記載のアレイ基板。
- 前記凹パターンの底面は、前記基板の上面を含み、
前記凹パターン側壁は、前記第1絶縁膜、前記第2絶縁膜、前記バッファ層の内側面を含む、請求項1に記載のアレイ基板。 - 前記各配線パターンは、前記基板の一側に向かって延在する配線ライン部を含み、
前記凹パターンは、互いに隣接する配線ライン部の間に配置される、請求項1に記載のアレイ基板。 - 前記配線ライン部は、少なくとも一つ以上の折曲部を有する、請求項4に記載のアレイ基板。
- 前記配線ライン部は、ジグザグ状に延在する、請求項4に記載のアレイ基板。
- 前記各配線パターンは、一端が前記配線ライン部より広い幅を有する配線パッド部をさらに含み、
前記凹パターンは隣接する配線パッド部の間まで延長され、
前記配線ライン部の間に配置される凹パターンの幅は、前記配線パッド部の間に配置される凹パターンの幅より大きい、請求項4に記載のアレイ基板。 - 前記凹パターンは複数個であり、前記複数個の凹パターンは前記複数個の配線パターン間々に配置される請求項1に記載のアレイ基板。
- 前記凹パターンの少なくとも一部は、複数個の列と複数個の行を有するマトリックス状に配列される、請求項1に記載のアレイ基板。
- 前記配線パッド部の内側に配置され、前記配線パッド部、前記第2絶縁膜、前記第1絶縁膜、前記バッファ層を貫通して前記基板の上面を露出させる凹溝をさらに含む、請求項7に記載のアレイ基板。
- 前記凹パターンの少なくとも一部は、前記複数個の配線ライン部のうち最外郭に配置される配線ライン部の外側に配置される、請求項7に記載のアレイ基板。
- 前記複数個の配線ライン部のうち最外郭に配置される配線ライン部の外側に配置されるセルIDパターンをさらに含み、前記凹パターンの少なくとも一部は前記セルIDパターンの外周に沿って配置される、請求項1に記載のアレイ基板。
- 前記基板上に前記基板を少なくとも部分的に横切る少なくとも一つ以上の切断線が定義され、前記凹パターンは前記切断線と隣接するように配置される、請求項1に記載のアレイ基板。
- 前記バッファ層は、酸化ケイ素、窒化ケイ素、酸化アルミニウム及び酸窒化ケイ素から成る群から選択された何れか一つ以上を含んで成る、請求項1に記載のアレイ基板。
- 前記基板は可撓性基板である、請求項1に記載のアレイ基板。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2013-0069039 | 2013-06-17 | ||
KR20130069039 | 2013-06-17 | ||
KR10-2013-0125416 | 2013-10-21 | ||
KR1020130125416A KR102257119B1 (ko) | 2013-06-17 | 2013-10-21 | 어레이 기판 및 이를 포함하는 유기 발광 표시 장치 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2020038248A Division JP7079803B2 (ja) | 2013-06-17 | 2020-03-05 | 表示装置 |
Publications (2)
Publication Number | Publication Date |
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JP2015002177A true JP2015002177A (ja) | 2015-01-05 |
JP6673631B2 JP6673631B2 (ja) | 2020-03-25 |
Family
ID=50942219
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014122154A Active JP6673631B2 (ja) | 2013-06-17 | 2014-06-13 | アレイ基板 |
Country Status (4)
Country | Link |
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US (5) | US9472507B2 (ja) |
EP (2) | EP2816604B1 (ja) |
JP (1) | JP6673631B2 (ja) |
CN (2) | CN104241544B (ja) |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2016152775A1 (ja) * | 2015-03-25 | 2016-09-29 | シャープ株式会社 | 表示装置 |
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EP2816604A3 (en) | 2015-03-11 |
US20180090520A1 (en) | 2018-03-29 |
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CN109378319B (zh) | 2023-10-24 |
EP3879581A1 (en) | 2021-09-15 |
EP2816604A2 (en) | 2014-12-24 |
EP2816604B1 (en) | 2021-05-26 |
CN104241544B (zh) | 2018-12-14 |
CN104241544A (zh) | 2014-12-24 |
US11264408B2 (en) | 2022-03-01 |
US20140367658A1 (en) | 2014-12-18 |
JP6673631B2 (ja) | 2020-03-25 |
US9472507B2 (en) | 2016-10-18 |
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