CN110634886A - 显示面板及其制备方法 - Google Patents

显示面板及其制备方法 Download PDF

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CN110634886A
CN110634886A CN201910773342.XA CN201910773342A CN110634886A CN 110634886 A CN110634886 A CN 110634886A CN 201910773342 A CN201910773342 A CN 201910773342A CN 110634886 A CN110634886 A CN 110634886A
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layer
driving circuit
pixel driving
groove
substrate
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胡凯
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to CN201910773342.XA priority Critical patent/CN110634886A/zh
Priority to PCT/CN2019/106258 priority patent/WO2021031266A1/zh
Priority to US16/623,449 priority patent/US20210327912A1/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
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    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
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    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
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    • G09G3/30Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
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    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259Multistep manufacturing methods
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    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/121Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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Abstract

本发明提供一种显示面板及其制备方法,所述显示面板包括:基板,包括基板本体及凹槽,下凹于所述基板本体一侧的表面;以及像素驱动电路,其一部分设于所述凹槽内部。所述显示面板的制备方法包括以下步骤基板提供步骤、基板刻蚀步骤以及像素驱动电路制备步骤。本发明的技术效果在于,在基板上表面刻蚀出凹槽,在显示面板弯折时,所述凹槽处的应力较小,薄膜晶体管承受的应力也较小,因此薄膜晶体管不易被损毁,延长显示面板的使用寿命。

Description

显示面板及其制备方法
技术领域
本发明涉及显示器领域,特别涉及一种显示面板及其制备方法。
背景技术
人们在使用手机时,无论是办公还是看视频总会遇到屏幕太小,眼睛容易疲劳等问题。柔性折叠屏可以在一定程度上解决这些问题。柔性可弯折AMOLED屏由于其大色域、强对比、广视角、高分辨率、轻薄和柔软等特性而受到很多厂商的青睐。
柔性AMOLED显示屏主要包括以下个部分:柔性基材、薄膜晶体管(TFT),OLED和封装层。AMOLED显示屏的TFT器件由于无机层的脆性,在弯曲的时候容易发生TFT失效从而造成屏幕异常或无法点亮的现象。
传统的AMOLED显示屏在显示区(Active Area)的子像素(sub pixel)是呈平面紧密排布的,这种排布的优点就是子像素(sub pixel)可以紧密排列实现更高像素密度(PPI)和全高清(FHD)。然而,这种平面紧密性排布在弯曲的时候,薄膜晶体管(TFT)器件容易受到大的拉伸或压缩应力,导致薄膜晶体管(TFT)失效,进而造成屏幕无法正常点亮的问题。
发明内容
本发明的目的在于,解决现有技术的显示面板在弯折过程中薄膜晶体管易损坏的技术问题。
为实现上述目的,本发明提供一种显示面板,包括:基板,包括基板本体;及凹槽,下凹于所述基板本体一侧的表面;以及第一像素驱动电路,其一部分设于所述凹槽内部。
进一步地,第二像素驱动电路,设于所述基板本体一侧的表面。
进一步地,所述第一像素驱动电路与所述第二像素驱动电路设于所述基板本体的同一侧。
进一步地,所述第一像素驱动电路或所述第二像素驱动电路包括:阻隔层,贴附于所述凹槽的底部及内侧壁,或者,贴附于所述基板本体的表面;缓冲层,设于所述阻隔层远离所述基板一侧的表面;有源层,设于所述缓冲层远离所述阻隔层一侧的表面;第一栅极绝缘层,设于所述有源层及所述缓冲层远离所述阻隔层一侧的表面;第一栅极层,设于所述第一栅极绝缘层远离所述缓冲层一侧的表面,且与所述有源层相对设置;第二栅极绝缘层,设于所述第一栅极层及所述第一栅极绝缘层远离所述缓冲层一侧的表面;第二栅极层,设于所述第二栅极绝缘层远离所述第一栅极绝缘层一侧的表面,且与所述第一栅极层相对设置;第一介电层,设于所述第二栅极层及所述第二栅极绝缘层远离所述第一栅极绝缘层一侧的表面;以及第二介电层,设于所述第一介电层远离所述第二栅极绝缘层一侧的表面。
进一步地,所述第一像素驱动电路或所述第二像素驱动电路还包括:源漏极层,设于所述第二介电层远离所述第一介电层一侧的表面,且穿过所述第二介电层、所述第一介电层、所述第二栅极绝缘层及所述第一栅极绝缘层,连接至所述有源层。
进一步地,所述显示面板还包括:平坦层,设于所述第一像素驱动电路或所述第二像素驱动电路远离所述基板一侧的表面;阳极层,设于所述平坦层远离所述第一像素驱动电路或所述第二像素驱动电路一侧的表面,且穿过所述平坦层,连接至所述源漏极层;像素定义层,设于所述阳极层及所述平坦层远离所述第一像素驱动电路或所述第二像素驱动电路一侧的表面;通孔,贯穿于所述像素定义层,且与所述阳极层相对设置;以及隔垫物,设于所述像素定义层远离所述平坦层一侧的表面。
进一步地,所述通孔包括:第一通孔,与所述第一像素驱动电路相对设置;第二通孔,与所述第二像素驱动电路相对设置;所述第一通孔与所述第二通孔间隔设置。
为实现上述目的,本发明还提供一种显示面板的制备方法,包括以下步骤:基板提供步骤,提供一基板,包括基板本体;基板刻蚀步骤,对所述基板本体进行刻蚀处理,形成一凹槽,所述凹槽下凹于所述基板本体一侧的表面;以及像素驱动电路制备步骤,在所述凹槽处制备出像素驱动电路,其一部分设于所述凹槽内部。
进一步地,所述基板刻蚀步骤包括:光刻胶涂布步骤,在所述基板本体的上表面涂布一层光刻胶;曝光步骤,在所述光刻胶上表面进行曝光处理,形成一凹槽;以及光刻胶去除步骤,去除所述光刻胶。
进一步地,所述像素驱动电路制备步骤包括:阻隔层制备步骤,在所述凹槽的底部及内侧壁及所述基板本体的上表面制备出一阻隔层;缓冲层制备步骤,在所述阻隔层的上表面制备出一缓冲层;以及有源层制备步骤,在所述凹槽内的缓冲层及所述基板本体上的缓冲层的上表面制备出一有源层。
本发明的技术效果在于,在柔性基板上表面刻蚀出一凹槽,柔性基板在凹槽处的厚度较小,当柔性基板被弯折后,在所述凹槽处的基板产生的应力较小,而像素驱动电路(TFT)被放置于所述凹槽内,所述TFT承受的应力也比较小。因此,在柔性显示面板的弯折过程中,所述像素驱动电路不易受应力影响而被损毁,进而可以有效延长显示面板的使用寿命。
附图说明
图1为本发明实施例所述显示面板的结构示意图;
图2为本发明实施例所述基板的结构示意图;
图3为本发明实施例所述显示面板的制备方法的流程图;
图4为本发明实施例所述基板刻蚀步骤的流程图;
图5为本发明实施例所述薄膜晶体管制备步骤的流程图。
部分组件标识如下:
1、基板;2、像素驱动电路;3、平坦层;4、阳极层;5、像素定义层;6、隔垫物;
11、基板本体;12、凹槽;
21、阻隔层;22、缓冲层;23、有源层;24、第一栅极绝缘层;25、第一栅极层;26、第二栅极绝缘层;27、第二栅极层;28、第一介电层;29、第二介电层;20、源漏极层;
210、第一像素驱动电路;220、第二像素驱动电路;
51、通孔;511、第一通孔;512、第二通孔。
具体实施方式
以下结合说明书附图详细说明本发明的优选实施例,以向本领域中的技术人员完整介绍本发明的技术内容,以举例证明本发明可以实施,使得本发明公开的技术内容更加清楚,使得本领域的技术人员更容易理解如何实施本发明。然而本发明可以通过许多不同形式的实施例来得以体现,本发明的保护范围并非仅限于文中提到的实施例,下文实施例的说明并非用来限制本发明的范围。
本发明所提到的方向用语,例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等,仅是附图中的方向,本文所使用的方向用语是用来解释和说明本发明,而不是用来限定本发明的保护范围。
在附图中,结构相同的部件以相同数字标号表示,各处结构或功能相似的组件以相似数字标号表示。此外,为了便于理解和描述,附图所示的每一组件的尺寸和厚度是任意示出的,本发明并没有限定每个组件的尺寸和厚度。
当某些组件,被描述为“在”另一组件“上”时,所述组件可以直接置于所述另一组件上;也可以存在一中间组件,所述组件置于所述中间组件上,且所述中间组件置于另一组件上。当一个组件被描述为“安装至”或“连接至”另一组件时,二者可以理解为直接“安装”或“连接”,或者一个组件通过一中间组件“安装至”或“连接至”另一个组件。
如图1~2所示,本实施例提供一种显示面板,包括基板1、像素驱动电路2、平坦层3、阳极层4、像素定义层5及隔垫物6。
基板1为柔性基底,材质为聚酰亚胺(Polyimide,PI),基板1呈黄色透明薄膜,相对密度为1.39~1.45,聚酰亚胺薄膜具有优良的耐高低温性、电气绝缘性、粘结性、耐辐射性、耐介质性,能在-269℃~280℃的温度范围内长期使用,短时可达到400℃的高温。基板1包括基板本体11,在基板本体11上表面向下开有凹槽12。
在现有的柔性基底上增加凹槽12,柔性基板在凹槽12处的厚度较小,当基板1被弯折后,在凹槽12处的基板产生的应力较小。
凹槽12设于显示面板的显示区,可设置若干个凹槽12,像素驱动电路2分为第一像素驱动电路210和第二像素驱动电路220,第一像素驱动电路210设于凹槽12内,第二像素驱动电路设于凹槽12外,即设于基板1的上表面。第一像素驱动电路210与第二像素驱动电路220间隔设置。像素驱动电路2可为单个像素驱动电路或是多个像素驱动电路交替设于凹槽12内外。
若干凹槽12在水平方向依次排列,在竖直方向上也可依次排列,使得后续显示面板弯折时既可以水平弯折,也可以竖直弯折。
像素驱动电路2包括阻隔层21、缓冲层22、有源层23、第一栅极绝缘层24、第一栅极层25、第二栅极绝缘层26、第二栅极层27、第一介电层28、第二介电层29及源漏极层20。
阻隔层21贴附于凹槽12的底部及内侧壁以及基板本体11的上表面,阻隔层21起到阻隔外界水氧的作用。
缓冲层22贴附于阻隔层21的上表面,起到缓冲的作用,用以保护像素驱动电路2。
有源层23贴附于缓冲层22的上表面,有源层23的材质为硅,其具有半导体性能。有源层23包括第一有源层以及第二有源层,所述第一有源层贴附于凹槽12内的缓冲层上表面,所述第二有源层贴附于基板本体11上的缓冲层的上表面。
第一栅极绝缘层(Gate Insulator,GI)24贴附于缓冲层22以及有源层23的上表面,第一栅极绝缘层24的材质通常为硅的氮化物(SiNx)或硅的氧化物(SiOx),第一栅极绝缘层24起到绝缘作用,防止像素驱动电路2内发生短路现象。
第一栅极层25贴附于第一栅极绝缘层24的上表面,设于有源层23的上方,与有源层23相对设置,第一栅极层25的材质为金属。
第二栅极绝缘层(Gate Insulator,GI)26贴附于第一栅极绝缘层24及第一栅极层25的上表面,第二栅极绝缘层26的材质通常为硅的氮化物(SiNx)或硅的氧化物(SiOx),第二栅极绝缘层26起到绝缘作用,防止像素驱动电路2内发生短路现象。
第二栅极层27贴附于第二栅极绝缘层26的上表面,设于第一栅极层25的上方,与第一栅极层25相对设置,第二栅极层27的材质为金属。
第一介电层(Inter Layer Dielectric,ILD)28设于第二栅极层27及第二栅极绝缘层26的上表面,第一介电层28的的材质为无机材料,一般为氮氧化硅(SiON),掺有硼、磷的硅玻璃(BPSG),等离子体增强正硅酸乙酯(PETEOS)等。
第二介电层29设于第一介电层28的上表面,第二介电层29的的材质为无机材料,一般为氮氧化硅(SiON),掺有硼、磷的硅玻璃(BPSG),等离子体增强正硅酸乙酯(PETEOS)等。第二介电层29为经过平坦化处理的介电层,便于后续膜层的贴附。第二介电层29用以隔离第二栅极层27与后续膜层,防止像素驱动电路2内发生短路现象,用以保护电路结构。
源漏极层20设于第二介电层29的上表面,与有源层23相对设置,源漏极层20从上往下依次穿过第二介电层29、第一介电层28、第二栅极绝缘层26及第一栅极绝缘层24,连接至有源层23的上表面,实现源漏极层20与有源层23的电路连接。
平坦层(Planarization Layer,PLN)3设于第二介电层29及源漏极层20的上表面,平坦化层3用以平整基板1上因各种不同层图案所造成的面内段差。平坦化层3能够减少黑矩阵(black matrix)的面积、增加面板的开口率、增加光的透过率、降低产品功耗。
阳极层(Anode Layer)4设于平坦层3的上表面,且穿过平坦层3连接至源漏极层20,实现阳极层4与像素驱动电路2的电路连接。
像素定义层(Pixel Define Layer,PDL)5设于阳极层4及平坦层3的上表面,起到绝缘的作用,用以定义发光层的大小。
像素定义层5上设有通孔51,通孔51与阳极层4相对设置,通孔51内可设发光层,所述发光层连接至阳极层4,获得电信号,使其成为发光像素,像素定义层5覆盖的地方不发光。
通孔51包括第一通孔511及第二通孔512,第一通孔511与第一像素驱动电路210相对设置,第二通孔512与第二像素驱动电路220相对设置,第二通孔511与第二通孔512间隔设置,使得第一通孔511内的发光层与第二通孔512内的发光层间隔设置,相邻子像素之间的凹凸方向相反,即红色发光层(R)、绿色发光层(G)及蓝色发光层(B)之间形成“凹凸凹”或是“凸凹凸”的形状。
隔垫物(Spacer,SP)6设于像素定义层5的上表面,用以防止OLED材料蒸镀时,精细金属掩模(Fine Metal Mask,简称FMM)与像素定义层5直接接触,导致像素定义层5刮伤产生缺陷(Defect)。
本实施例所述显示面板的技术效果在于,在柔性基板上表面设一凹槽,柔性基板在凹槽处的厚度较小,当柔性基板被弯折后,在所述凹槽处的基板产生的应力较小,而像素驱动电路(TFT)被放置于所述凹槽内,所述TFT承受的应力也比较小。因此,在柔性显示面板的弯折过程中,所述像素驱动电路不易受应力影响而被损毁,进而可以有效延长显示面板的使用寿命。
如图3所示,本实施例还提供一种上述显示面板的制备方法,包括以下步骤S1~S3。
S1基板提供步骤,提供一基板,所述基板包括基板本体,所述基板为柔性基板。
S2基板刻蚀步骤,刻蚀处理所述基板本体,在所述基板本体的上表面形成凹槽。如图4所示,所述基板刻蚀步骤具体包括步骤S21~S23。S21光刻胶涂布步骤,在所述基板本体的上表面涂布一层光刻胶(Photo Resist,PR)。S22曝光步骤,在所述光刻胶上方设置一掩膜板,利用紫外光(UV)向下照射所述掩膜板,形成凹槽。S23光刻胶去除步骤,移除所述掩膜版,将所述光刻胶溶解于显影液中,去除所述光刻胶。在柔性基板的上表面开设凹槽,柔性基板在所述凹槽处的厚度较小,当柔性基板被弯折后,在所述凹槽处的基板产生的应力较小。
S3像素驱动电路制备步骤,在所述凹槽处及所述基板本体的上表面制备出像素驱动电路,其一部分设于所述凹槽内部。所述像素驱动电路设于所述凹槽内,故所述薄膜晶体管所承受的应力较小,进而不易被损毁,可延长显示面板的使用寿命。
如图5所示,所述像素驱动电路制备步骤包括步骤S31~S39。
S31阻隔层制备步骤,在所述凹槽的底部及内侧壁以及所述基板本体的上表面制备出阻隔层。
S32缓冲层制备步骤,在所述阻隔层的上表面制备出一缓冲层,可利用沉积的方式或喷墨打印的方式制备所得。
S33有源层制备步骤,在所述缓冲层的上表面沉积半导体材料,经过图案化处理后,在所述凹槽内的缓冲层的上表面形成第一有源层,在所述基板本体上的缓冲层的上表面形成第二有源层,所述半导体材料可为硅。
S34第一栅极绝缘层制备步骤,在所述有源层及所述缓冲层的上表面沉积无机材料,所述无机材料包括硅的氮化物(SiNx)或硅的氧化物(SiOx),经过图案化处理后,形成第一栅极绝缘层。
S35第一栅极层制备步骤,在所述第一栅极绝缘层的上表面沉积金属材料,经图案化处理后,形成第一栅极层,所述第一栅极层设于所述有源层的上方,与所述有源层相对设置。
S36第二栅极绝缘层制备步骤,在所述第一栅极绝缘层及所述第一栅极层的上表面沉积无机材料,所述无机材料包括硅的氮化物(SiNx)或硅的氧化物(SiOx),经过图案化处理后,形成第二栅极绝缘层。
S37第二栅极层制备步骤,在所述第二栅极绝缘层的上表面沉积金属材料,经图案化处理后,形成第二栅极层,所述第二栅极层设于所述第一栅极层的上方,与所述第一栅极层相对设置。
S38第一介电层制备步骤,在所述第二栅极绝缘层及所述第二栅极层的上表面沉积无机材料,所述无机材料包括氮氧化硅(SiON),掺有硼、磷的硅玻璃(BPSG),等离子体增强正硅酸乙酯(PETEOS)等,经图案化处理后形成第一介电层。
S39第二介电层制备步骤,在所述第一介电层的上表面沉积无机材料,所述无机材料包括氮氧化硅(SiON),掺有硼、磷的硅玻璃(BPSG),等离子体增强正硅酸乙酯(PETEOS)等,经平坦化处理后形成第二介电层。
S30源漏极层制备步骤,在所述第二介电层的上表面制备出源漏极层,所述源漏极层依次穿过所述第二介电层、所述第一介电层、所述第二栅极绝缘层及所述第一栅极绝缘层,连接至所述有源层。
本发明实施例所述显示面板的制备方法的技术效果在于,利用光刻胶,在基板上刻蚀出一凹槽,柔性基板在凹槽处的厚度较小,当柔性基板被弯折后,在所述凹槽处的基板产生的应力较小,在所述凹槽内及基板本体的上表面制备出像素驱动电路,所述TFT承受的应力也比较小。因此,在柔性显示面板的弯折过程中,所述像素驱动电路不易受应力影响而被损毁,进而可以有效延长显示面板的使用寿命。
以上所述仅是本发明的优选实施方式,应当指出,对于本技术领域的普通技术人员,在不脱离本发明原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也应视为本发明的保护范围。

Claims (10)

1.一种显示面板,其特征在于,包括:
基板,包括
基板本体;及
凹槽,下凹于所述基板本体一侧的表面;以及
第一像素驱动电路,设于所述凹槽内部。
2.如权利要求1所述的显示面板,其特征在于,
第二像素驱动电路,设于所述基板本体一侧的表面。
3.如权利要求2所述的显示面板,其特征在于,
所述第一像素驱动电路与所述第二像素驱动电路设于所述基板本体的同一侧。
4.如权利要求2所述的显示面板,其特征在于,
所述第一像素驱动电路或所述第二像素驱动电路包括:
阻隔层,贴附于所述凹槽的底部及内侧壁,或者,贴附于所述基板本体的表面;
缓冲层,设于所述阻隔层远离所述基板一侧的表面;
有源层,设于所述缓冲层远离所述阻隔层一侧的表面;
第一栅极绝缘层,设于所述有源层及所述缓冲层远离所述阻隔层一侧的表面;
第一栅极层,设于所述第一栅极绝缘层远离所述缓冲层一侧的表面,且与所述有源层相对设置;
第二栅极绝缘层,设于所述第一栅极层及所述第一栅极绝缘层远离所述缓冲层一侧的表面;
第二栅极层,设于所述第二栅极绝缘层远离所述第一栅极绝缘层一侧的表面,且与所述第一栅极层相对设置;
第一介电层,设于所述第二栅极层及所述第二栅极绝缘层远离所述第一栅极绝缘层一侧的表面;以及
第二介电层,设于所述第一介电层远离所述第二栅极绝缘层一侧的表面。
5.如权利要求4所述的显示面板,其特征在于,
所述第一像素驱动电路或所述第二像素驱动电路还包括:
源漏极层,设于所述第二介电层远离所述第一介电层一侧的表面,且穿过所述第二介电层、所述第一介电层、所述第二栅极绝缘层及所述第一栅极绝缘层,连接至所述有源层。
6.如权利要求5所述的显示面板,其特征在于,还包括
平坦层,设于所述第一像素驱动电路或所述第二像素驱动电路远离所述基板一侧的表面;
阳极层,设于所述平坦层远离所述第一像素驱动电路或所述第二像素驱动电路一侧的表面,且穿过所述平坦层,连接至所述源漏极层;
像素定义层,设于所述阳极层及所述平坦层远离所述第一像素驱动电路或所述第二像素驱动电路一侧的表面;
通孔,贯穿于所述像素定义层,且与所述阳极层相对设置;以及
隔垫物,设于所述像素定义层远离所述平坦层一侧的表面。
7.如权利要求6所述的显示面板,其特征在于,
所述通孔包括:
第一通孔,与所述第一像素驱动电路相对设置;
第二通孔,与所述第二像素驱动电路相对设置;
所述第一通孔与所述第二通孔间隔设置。
8.一种显示面板的制备方法,其特征在于,包括以下步骤:
基板提供步骤,提供一基板,包括基板本体;
基板刻蚀步骤,对所述基板本体进行刻蚀处理,形成一凹槽,所述凹槽下凹于所述基板本体一侧的表面;以及
像素驱动电路制备步骤,在所述凹槽处制备出像素驱动电路,其一部分设于所述凹槽内部。
9.如权利要求8所述的显示面板的制备方法,其特征在于,
所述基板刻蚀步骤包括:
光刻胶涂布步骤,在所述基板本体的上表面涂布一层光刻胶;
曝光步骤,在所述光刻胶上表面进行曝光处理,形成一凹槽;以及
光刻胶去除步骤,去除所述光刻胶。
10.如权利要求8所述的显示面板的制备方法,其特征在于,
所述像素驱动电路制备步骤包括:
阻隔层制备步骤,在所述凹槽的底部及内侧壁及所述基板本体的上表面制备出一阻隔层;
缓冲层制备步骤,在所述阻隔层的上表面制备出一缓冲层;以及
有源层制备步骤,在所述凹槽内的缓冲层及所述基板本体上的缓冲层的上表面制备出一有源层。
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