WO2016119306A1 - Oled像素结构 - Google Patents

Oled像素结构 Download PDF

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WO2016119306A1
WO2016119306A1 PCT/CN2015/075691 CN2015075691W WO2016119306A1 WO 2016119306 A1 WO2016119306 A1 WO 2016119306A1 CN 2015075691 W CN2015075691 W CN 2015075691W WO 2016119306 A1 WO2016119306 A1 WO 2016119306A1
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anode
region
compensation
oled
pixel
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PCT/CN2015/075691
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French (fr)
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吴元均
吴小玲
迟世鹏
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深圳市华星光电技术有限公司
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Priority to US14/655,735 priority Critical patent/US9647049B2/en
Publication of WO2016119306A1 publication Critical patent/WO2016119306A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/813—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/814—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/352—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels the areas of the RGB subpixels being different
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80515—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an OLED pixel structure.
  • OLED Organic Light Emitting Diode
  • LCD liquid crystal display
  • each OLED light-emitting device can be equivalent to a structure in which a light-emitting diode and a capacitor are connected in parallel.
  • the size of the parallel capacitor directly affects the voltage across the OLED and the current flowing through the OLED, thereby affecting the entire OLED display device. The quality of the display.
  • FIG. 2 it is a schematic cross-sectional view of a conventional OLED pixel structure.
  • the OLED pixel structure includes red, green, and blue sub-pixel regions, and the red, green, and blue sub-pixel regions respectively include a substrate 100, an anode 200 formed on the substrate 100, and is formed on the anode 200.
  • a flat layer 300, an organic light emitting layer 400 formed on the flat layer 300, a cathode 500 formed on the organic light emitting layer 400, and an opening region 310 on the flat layer 300, the organic light emitting layer 400 Contact with the anode 200 via the open region 310.
  • the total capacitance values of the red, green, and blue sub-pixel regions are different due to different luminescent materials, aperture ratios, and attenuations of the red, green, and blue sub-pixel regions, thereby causing different
  • the voltages across the OLED of the sub-pixel region are different, and thus the luminance of the OLED of the different sub-pixel regions is also different, thereby affecting the performance of the OLED device and the display quality of the entire display screen.
  • the present invention provides an OLED pixel structure including red, green, and blue sub-pixel regions, wherein the red, green, and blue sub-pixel regions respectively include a substrate, an anode formed on the substrate, and a formation a flat layer on the anode, an organic light-emitting layer formed on the flat layer, and a cathode formed on the organic light-emitting layer, wherein the flat layer is provided with an open region, and the organic light-emitting layer is provided
  • the open region is in contact with the anode, the anode includes an anode, and an anode compensation region connected to the anode, the cathode, the anode compensation region, and a interlayer between the cathode and the anode compensation region constituting the compensation capacitor C p, respectively, the compensation capacitor C p total capacitance value of the red / green / blue sub-pixel region is equal, and the capacitance value C reaches the desired total OLED drive circuit.
  • the interlayer is an organic light-emitting layer and a flat layer, and the cathode, the anode compensation region, and the organic light-emitting layer between the cathode and the anode compensation region and the flat layer together constitute a compensation capacitor C p .
  • An insulating layer is disposed on the anode compensation region, the interlayer is an organic light emitting layer, and an insulating layer, the cathode, the anode compensation region, and an organic light emitting layer and an insulating layer between the cathode and the anode compensation region. Together, they constitute a compensation capacitor C p .
  • the material of the insulating layer is silicon oxide, and the thickness of the insulating layer is smaller than the thickness of the flat layer.
  • the material of the anode is indium tin oxide.
  • the material of the flat layer is an organic material.
  • the area of the anode compensation region of the red, green, and blue sub-pixel regions is different in size.
  • the present invention also provides an OLED pixel structure including red, green, and blue sub-pixel regions, wherein the red, green, and blue sub-pixel regions respectively include a substrate, an anode formed on the substrate, and an anode formed on the anode a flat layer thereon, an organic light-emitting layer formed on the flat layer, and a cathode formed on the organic light-emitting layer, wherein the flat layer is provided with an open region, and the organic light-emitting layer is via the open region
  • the anode is in contact with the anode, and the anode includes an anode and an anode compensation region connected to the anode, and the cathode, the anode compensation region, and the interlayer between the cathode and the anode compensation region together constitute a compensation capacitor C
  • the compensation capacitor C p equalizes the total capacitance values of the red, green, and blue sub-pixel regions, respectively, and reaches the total capacitance value C required by the OLED driving circuit;
  • the interlayer is an organic light-emitting layer and a flat layer, and the cathode, the anode compensation region, and the organic light-emitting layer between the cathode and the anode compensation region, and the flat layer together constitute a compensation capacitor C p ;
  • the material of the anode is indium tin oxide.
  • the OLED pixel structure of the present invention calculates red, green, and blue according to the total amount of capacitance required for the driving circuit of the OLED device and the self-capacitance of the OLED in the red, green, and blue sub-pixel regions.
  • the compensation capacitance required for the color sub-pixel region is calculated according to the plate capacitance formula, and the area of the anode of the red, green, and blue sub-pixel regions needs to be increased, and the anode compensation region is formed to make the anode compensation region and the cathode.
  • the interlayer between the anode compensation region and the cathode together constitute a compensation capacitor, wherein the compensation capacitor makes the total capacitance values of the red, green and blue sub-pixel regions equal, thereby solving the red, green and blue sub-pixel regions due to the luminescent material
  • the difference in aperture ratio and attenuation results in different total capacitance values of the red, green, and blue sub-pixel regions, and the structure is simple and easy to manufacture.
  • 1 is a driving circuit diagram of a conventional OLED
  • FIG. 2 is a schematic cross-sectional view showing a conventional OLED pixel structure
  • FIG. 3 is a schematic diagram of a first embodiment of an OLED pixel structure of the present invention.
  • FIG. 4 is a schematic diagram of a second embodiment of an OLED pixel structure of the present invention.
  • FIG. 3 is a first embodiment of an OLED pixel structure according to the present invention.
  • the OLED pixel structure includes red, green, and blue sub-pixel regions, and the red, green, and blue sub-pixel regions respectively include a substrate 1 .
  • An opening region 31 is disposed on the flat layer 3, and the organic light emitting layer 4 is in contact with the anode via the opening region 31.
  • the anode includes an anode 2, and an anode compensation region 21 connected to the anode 2, the cathode 5, 21, and 21 located in the interlayer between the cathode 5 and the anode compensation regions constitute an anode region of compensation the compensation capacitor C p, the compensation capacitor C p are the red, green and blue subpixels
  • the total capacitance of the region is equal and reaches the total capacitance value C required for the OLED driver circuit.
  • the material of the anode 2 is indium tin oxide
  • the material of the flat layer 3 is an organic material.
  • the interlayer between the cathode 5 and the anode compensation region 21 is an organic light-emitting layer 4 and a flat layer 3, the cathode 5, the anode compensation region 21, and the location
  • the organic light-emitting layer 4 between the cathode 5 and the anode compensation region 21 and the flat layer 3 together constitute a compensation capacitor C p .
  • the self-capacitance values of the OLEDs in the sub-pixel regions are also different, so that the total capacitance of each sub-pixel region is The values all reach the total capacitance value C required by the OLED driving circuit, so that the magnitude of the compensation capacitance value C p required for each sub-pixel region is different, and the area of the anode compensation region 21 in the red, green, and blue sub-pixel regions is also different.
  • the compensation capacitance C p C total -C r of the red sub-pixel region is calculated, and then The plate capacitance calculation formula calculates the area of the anode compensation region 21 of the red sub-pixel region;
  • FIG. 4 is a second embodiment of the OLED pixel structure of the present invention.
  • the interlayer between the anode compensation region 21 and the cathode 5 is an organic light-emitting layer 4 and the insulating layer 32, the cathode 5, 21, and the cathode 5 is located and the organic light emitting layer 4, and an insulating layer 21 between the anode region of the anode compensate compensation region 32 together form compensation capacitor C p; preferably, the insulation
  • the material of the layer 32 is silicon oxide, and the thickness of the insulating layer 32 is smaller than the thickness of the flat layer 3.
  • the second embodiment is different from the first embodiment in that an insulating layer 32 is used instead of the flat layer 3 above the anode compensation region 21, since the insulating layer 32 is more insulating than the above. an insulating planarization layer 3, so that the same compensation capacitor C p, the anode of the second embodiment, compensation region 21 embodiment the area of the anode is smaller than the area of the compensation area 21 in the embodiment of the first embodiment, thereby reducing the need to produce The area of the capacitance compensation area 21 reduces the production cost and the manufacturing difficulty.
  • the OLED pixel structure is configured to provide a capacitance compensation region in a red, green, and blue sub-pixel region, wherein the capacitance compensation region includes an anode compensation region connected to the anode, a cathode, and the cathode and anode compensation
  • the interlayer between the regions, the sandwich structure together constitute a compensation capacitor C p of the red, green and blue sub-pixel regions, and the compensation capacitor C p respectively makes the total capacitance values of the red, green and blue sub-pixel regions The total capacitance value C required to reach the drive circuit of the OLED device.
  • the OLED pixel structure of the present invention calculates red, green, and blue colors according to the total amount of capacitance required for the driving circuit of the OLED device and the capacitance of the OLED in the red, green, and blue sub-pixel regions.
  • the compensation capacitance required for the sub-pixel region is calculated according to the plate capacitance formula, and the area of the anode of the red, green, and blue sub-pixel regions needs to be increased, and an anode compensation region is formed to make the anode compensation region, the cathode, and
  • the interlayer between the anode compensation region and the cathode together constitutes a compensation capacitor, which makes the total capacitance values of the red, green, and blue sub-pixel regions equal, thereby solving the red, green, and blue sub-pixel regions due to the luminescent material,
  • the difference in aperture ratio and attenuation results in different total capacitance values of the red, green, and blue sub-pixel regions, and the structure is simple and easy to manufacture.

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Abstract

提供一种OLED像素结构，包括红、绿、蓝色子像素区域。所述红、绿、蓝色子像素区域分别包括基板（1）、形成于所述基板（1）上的阳极（2）、形成于所述阳极（2）上的平坦层（3）、形成于所述平坦层（3）上的有机发光层（4）、及形成于所述有机发光层（4）上的阴极（5）。所述平坦层（3）上设有开口区（31），所述有机发光层（4）经由所述开口区（31）与所述阳极（2）相接触，所述阳极包括阳极（2）、及与所述阳极（2）相连接的阳极补偿区域（21），所述阴极（5）、阳极补偿区域（21）、及位于所述阴极（5）与阳极补偿区域（21）之间的夹层共同构成补偿电容。所述补偿电容分别使所述红、绿、蓝色子像素区域的总电容值相等，并达到OLED器件的驱动电路所需的电容值。

Description

OLED像素结构 技术领域
本发明涉及显示技术领域，尤其涉及一种OLED像素结构。
背景技术
有机发光二极管显示器(Organic Light Emitting Diode，OLED)是一种极具发展前景的平板显示技术，它不仅具有十分优异的显示性能，还具有自发光、结构简单、超轻薄、响应速度快、宽视角、低功耗及可实现柔性显示等特性，被誉为“梦幻显示器”，再加上其生产设备投资远小于液晶显示器(Liquid Crystal Display，LCD)，得到了各大显示器厂家的青睐，已成为显示技术领域中第三代显示器件的主力军。
如图1所示，为一种现有的OLED的驱动电路图。在OLED显示装置中，每一个OLED发光器件都可以等效为一个发光二极管和一个电容并联的结构，并联电容的大小直接影响着OLED两端的电压、流经的电流大小，继而影响整个OLED显示装置的显示质量。
如图2所示，为一种现有OLED像素结构的剖面示意图。所述OLED像素结构包括红、绿、蓝色子像素区域，所述红、绿、蓝色子像素区域分别包括基板100、形成于所述基板100上的阳极200、形成于所述阳极200上的平坦层300、形成于所述平坦层300上的有机发光层400、形成于所述有机发光层400上的阴极500，所述平坦层300上设有开口区310，所述有机发光层400经由所述开口区310与所述阳极200相接触。
而在现有OLED像素结构中，因红、绿、蓝色子像素区域的发光材料、开口率、及衰减的不同，造成红、绿、蓝色子像素区域的总电容值不同，从而造成不同子像素区域的OLED两端的电压不同，进而不同子像素区域OLED的发光亮度也不同，从而影响OLED器件的性能及整个显示屏的显示质量。
发明内容
本发明的目的在于提供一种OLED像素结构，该OLED像素结构中的红、绿、蓝色子像素区域的总电容值相等，且达到OLED驱动电路所需的电容值。
为实现上述目的，本发明提供一种OLED像素结构，包括红、绿、蓝 色子像素区域，所述红、绿、蓝色子像素区域分别包括基板、形成于所述基板上的阳极、形成于所述阳极上的平坦层、形成于所述平坦层上的有机发光层、及形成于所述有机发光层上的阴极，所述平坦层上设有开口区，所述有机发光层经由所述开口区与所述阳极相接触，所述阳极包括阳极、及与所述阳极相连接的阳极补偿区域，所述阴极、阳极补偿区域、及位于所述阴极与阳极补偿区域之间的夹层共同构成补偿电容Cp，所述补偿电容Cp分别使所述红/绿/蓝色子像素区域的总电容值相等，并达到OLED驱动电路所需的电容值C总。
所述夹层为有机发光层、及平坦层，所述阴极、阳极补偿区域、及位于所述阴极与阳极补偿区域之间的有机发光层、及平坦层共同构成补偿电容Cp。
所述阳极补偿区域上设有绝缘层，所述夹层为有机发光层、及绝缘层，所述阴极、阳极补偿区域、及位于所述阴极与阳极补偿区域之间的有机发光层、及绝缘层共同构成补偿电容Cp。
所述绝缘层的材料为氧化硅，所述绝缘层的厚度小于所述平坦层的厚度。
所述阳极的材料为氧化铟锡。
所述平坦层的材料为有机材料。
所述红、绿、蓝色子像素区域的阳极补偿区域的面积大小不同。
根据OLED驱动电路所需的电容C总以及所述红色子像素区域内OLED的自身电容Cr，计算出所述红色子像素区域的补偿电容Cp＝C总-Cr，再根据平板电容计算公式计算出所述红色子像素区域的阳极补偿区域的面积。
根据OLED驱动电路所需的电容C总以及所述绿色子像素区域内OLED的自身电容Cg，计算出所述绿色子像素区域的补偿电容Cp＝C总-Cg，再根据平板电容计算公式计算出所述绿色子像素区域的阳极补偿区域的面积。
根据OLED驱动电路所需的电容C总以及所述蓝色子像素区域内OLED的自身电容Cb，计算出所述蓝色子像素区域的补偿电容Cp＝C总-Cb，再根据平板电容计算公式计算出所述蓝色子像素区域的阳极补偿区域的面积。
本发明还提供一种OLED像素结构，包括红、绿、蓝色子像素区域，所述红、绿、蓝色子像素区域分别包括基板、形成于所述基板上的阳极、形成于所述阳极上的平坦层、形成于所述平坦层上的有机发光层、及形成于所述有机发光层上的阴极，所述平坦层上设有开口区，所述有机发光层经由所述开口区与所述阳极相接触，所述阳极包括阳极、及与所述阳极相连接的阳极补偿区域，所述阴极、阳极补偿区域、及位于所述阴极与阳极 补偿区域之间的夹层共同构成补偿电容Cp，所述补偿电容Cp分别使所述红、绿、蓝色子像素区域的总电容值相等，并达到OLED驱动电路所需的电容值C总；
其中，所述夹层为有机发光层、及平坦层，所述阴极、阳极补偿区域、及位于所述阴极与阳极补偿区域之间的有机发光层、及平坦层共同构成补偿电容Cp；
其中，所述阳极的材料为氧化铟锡。
本发明的有益效果：本发明的OLED像素结构，根据OLED器件的驱动电路所需的电容总量，以及红、绿、蓝色子像素区域内OLED的自身电容，分别计算出红、绿、蓝色子像素区域所需的补偿电容，再根据平板电容公式，分别计算出所述红、绿、蓝色子像素区域的阳极需要增大的面积，制作阳极补偿区域，使阳极补偿区域、阴极、及阳极补偿区域与阴极之间的夹层共同构成补偿电容，所述补偿电容使得红、绿、蓝色子像素区域的总电容值相等，从而解决因红、绿、蓝色子像素区域因发光材料、开口率、及衰减的不同，造成红、绿、蓝色子像素区域的总电容值不同的问题，同时结构简单，易于制作。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为一种现有的OLED的驱动电路图；
图2为现有的OLED像素结构的剖面示意图；
图3为本发明OLED像素结构第一实施例的示意图；
图4为本发明OLED像素结构第二实施例的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图3，为本发明OLED像素结构的第一实施例，所述OLED像素结构包括红、绿、蓝色子像素区域，所述红、绿、蓝色子像素区域分别 包括基板1、形成于所述基板1上的阳极、形成于所述阳极上的平坦层3、形成于所述平坦层3上的有机发光层4、及形成于所述有机发光层4上的阴极5，所述平坦层3上设有开口区31，所述有机发光层4经由所述开口区31与所述阳极相接触，所述阳极包括阳极2、及与所述阳极2相连接的阳极补偿区域21，所述阴极5、阳极补偿区域21、及位于所述阴极5与阳极补偿区域21之间的夹层共同构成补偿电容Cp，所述补偿电容Cp分别使所述红、绿、蓝色子像素区域的总电容值相等，并达到OLED驱动电路所需的电容值C总。
具体的，所述阳极2的材料为氧化铟锡，所述平坦层3的材料为有机材料。
具体的，如图3所示，在电容补偿区域，所述阴极5与阳极补偿区域21之间的夹层为有机发光层4与平坦层3，所述阴极5、阳极补偿区域21、及位于所述阴极5与阳极补偿区域21之间的有机发光层4、及平坦层3共同构成补偿电容Cp。
具体的，由于红、绿、蓝色子像素区域各自的有机发光层4的材料不同、开口率不同，因此各子像素区域内OLED的自身电容值也不同，为使各子像素区域的总电容值均达到OLED驱动电路所需的电容值C总，从而各子像素区域所需的补偿电容值Cp的大小不同，所述红、绿、蓝子像素区域内的阳极补偿区域21的面积也不同。
具体的，根据OLED驱动电路所需的电容C总以及所述红色子像素区域内OLED的自身电容Cr，计算出所述红色子像素区域的补偿电容Cp＝C总-Cr，再根据平板电容计算公式计算出所述红色子像素区域的阳极补偿区域21的面积；
根据OLED驱动电路所需的电容C总以及所述绿色子像素区域内OLED的自身电容Cg，计算出所述绿色子像素区域的补偿电容Cp＝C总-Cg，再根据平板电容计算公式计算出所述绿色子像素区域的阳极补偿区域21的面积；
根据OLED驱动电路所需的电容C总以及所述蓝色子像素区域内OLED的自身电容Cb，计算出所述蓝色子像素区域的补偿电容Cp＝C总-Cb，再根据平板电容计算公式计算出所述蓝色子像素区域的阳极补偿区域21的面积。
请参阅图4，为本发明OLED像素结构的第二实施例，在该第二实施例的电容补偿区域中，所述阳极补偿区域21与所述阴极5之间的夹层为有机发光层4与绝缘层32，所述阴极5、阳极补偿区域21、及位于所述阴极 5与阳极补偿区域21之间的有机发光层4、及绝缘层32共同构成补偿电容Cp；优选的，所述绝缘层32的材料为氧化硅，所述绝缘层32的厚度小于所述平坦层3的厚度。
该第二实施例与第一实施例相比，其不同之处在于：在所述阳极补偿区域21上方，采用绝缘层32代替了平坦层3，由于所述绝缘层32的绝缘性大于所述平坦层3的绝缘性，从而在补偿电容Cp相同的情况下，所述第二实施例中阳极补偿区域21的面积小于第一实施例中阳极补偿区域21的面积，从而减少了需要制作的电容补偿区域21的面积，降低了生产成本和制作难度。
上述OLED像素结构，通过分别在红、绿、蓝色子像素区域中设置电容补偿区域，所述电容补偿区域包括与所述阳极相连接的阳极补偿区域、阴极、以及位于所述阴极与阳极补偿区域之间的夹层，上述夹层结构共同构成红、绿、蓝色子像素区域的补偿电容Cp，所述补偿电容Cp分别使所述红、绿、蓝色子像素区域的总电容值均达到OLED器件的驱动电路所需的电容值C总。
综上所述，本发明的OLED像素结构，根据OLED器件的驱动电路所需的电容总量，以及红、绿、蓝色子像素区域内OLED的自身电容，分别计算出红、绿、蓝色子像素区域所需的补偿电容，再根据平板电容公式，分别计算出所述红、绿、蓝色子像素区域的阳极需要增大的面积，制作阳极补偿区域，使阳极补偿区域、阴极、及阳极补偿区域与阴极之间的夹层共同构成补偿电容，所述补偿电容使得红、绿、蓝色子像素区域的总电容值相等，从而解决因红、绿、蓝色子像素区域因发光材料、开口率、及衰减的不同，造成红、绿、蓝色子像素区域的总电容值不同的问题，同时结构简单，易于制作。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (16)

  1. 一种OLED像素结构，包括红、绿、蓝色子像素区域，所述红、绿、蓝色子像素区域分别包括基板、形成于所述基板上的阳极、形成于所述阳极上的平坦层、形成于所述平坦层上的有机发光层、及形成于所述有机发光层上的阴极，所述平坦层上设有开口区，所述有机发光层经由所述开口区与所述阳极相接触，所述阳极包括阳极、及与所述阳极相连接的阳极补偿区域，所述阴极、阳极补偿区域、及位于所述阴极与阳极补偿区域之间的夹层共同构成补偿电容Cp，所述补偿电容Cp分别使所述红、绿、蓝色子像素区域的总电容值相等，并达到OLED驱动电路所需的电容值C总。
  2. 如权利要求1所述的OLED像素结构，其中，所述夹层为有机发光层、及平坦层，所述阴极、阳极补偿区域、及位于所述阴极与阳极补偿区域之间的有机发光层、及平坦层共同构成补偿电容Cp。
  3. 如权利要求1所述的OLED像素结构，其中，所述阳极补偿区域上设有绝缘层，所述夹层为有机发光层、及绝缘层，所述阴极、阳极补偿区域、及位于所述阴极与阳极补偿区域之间的有机发光层、及绝缘层共同构成补偿电容Cp。
  4. 如权利要求3所述的OLED像素结构，其中，所述绝缘层的材料为氧化硅，所述绝缘层的厚度小于所述平坦层的厚度。
  5. 如权利要求1所述的OLED像素结构，其中，所述阳极的材料为氧化铟锡。
  6. 如权利要求1所述的OLED像素结构，其中，所述平坦层的材料为有机材料。
  7. 如权利要求1所述的OLED像素结构，其中，所述红、绿、蓝色子像素区域的阳极补偿区域的面积大小不同。
  8. 如权利要求7所述的OLED像素结构，其中，根据OLED驱动电路所需的电容C总以及所述红色子像素区域内OLED的自身电容Cr，计算出所述红色子像素区域的补偿电容Cp＝C总-Cr，再根据平板电容计算公式计算出所述红色子像素区域的阳极补偿区域的面积。
  9. 如权利要求7所述的OLED像素结构，其中，根据OLED驱动电路所需的电容C总以及所述绿色子像素区域内OLED的自身电容Cg，计算出所述绿色子像素区域的补偿电容Cp＝C总-Cg，再根据平板电容计算公式计算出所述绿色子像素区域的阳极补偿区域的面积。
  10. 如权利要求7所述的OLED像素结构，其中，根据OLED驱动电路所需的电容C总以及所述蓝色子像素区域内OLED的自身电容Cb，计算出所述蓝色子像素区域的补偿电容Cp＝C总-Cb，再根据平板电容计算公式计算出所述蓝色子像素区域的阳极补偿区域的面积。
  11. 一种OLED像素结构，包括红、绿、蓝色子像素区域，所述红、绿、蓝色子像素区域分别包括基板、形成于所述基板上的阳极、形成于所述阳极上的平坦层、形成于所述平坦层上的有机发光层、及形成于所述有机发光层上的阴极，所述平坦层上设有开口区，所述有机发光层经由所述开口区与所述阳极相接触，所述阳极包括阳极、及与所述阳极相连接的阳极补偿区域，所述阴极、阳极补偿区域、及位于所述阴极与阳极补偿区域之间的夹层共同构成补偿电容Cp，所述补偿电容Cp分别使所述红、绿、蓝色子像素区域的总电容值相等，并达到OLED驱动电路所需的电容值C总；
    其中，所述夹层为有机发光层、及平坦层，所述阴极、阳极补偿区域、及位于所述阴极与阳极补偿区域之间的有机发光层、及平坦层共同构成补偿电容Cp；
    其中，所述阳极的材料为氧化铟锡。
  12. 如权利要求11所述的OLED像素结构，其中，所述平坦层的材料为有机材料。
  13. 如权利要求11所述的OLED像素结构，其中，所述红、绿、蓝色子像素区域的阳极补偿区域的面积大小不同。
  14. 如权利要求13所述的OLED像素结构，其中，根据OLED驱动电路所需的电容C总以及所述红色子像素区域内OLED的自身电容Cr，计算出所述红色子像素区域的补偿电容Cp＝C总-Cr，再根据平板电容计算公式计算出所述红色子像素区域的阳极补偿区域的面积。
  15. 如权利要求13所述的OLED像素结构，其中，根据OLED驱动电路所需的电容C总以及所述绿色子像素区域内OLED的自身电容Cg，计算出所述绿色子像素区域的补偿电容Cp＝C总-Cg，再根据平板电容计算公式计算出所述绿色子像素区域的阳极补偿区域的面积。
  16. 如权利要求13所述的OLED像素结构，其中，根据OLED驱动电路所需的电容C总以及所述蓝色子像素区域内OLED的自身电容Cb，计算出所述蓝色子像素区域的补偿电容Cp＝C总-Cb，再根据平板电容计算公式计算出所述蓝色子像素区域的阳极补偿区域的面积。
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