WO2020192024A1 - 显示面板及显示装置 - Google Patents

显示面板及显示装置 Download PDF

Info

Publication number
WO2020192024A1
WO2020192024A1 PCT/CN2019/104823 CN2019104823W WO2020192024A1 WO 2020192024 A1 WO2020192024 A1 WO 2020192024A1 CN 2019104823 W CN2019104823 W CN 2019104823W WO 2020192024 A1 WO2020192024 A1 WO 2020192024A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
display area
area
display
light
Prior art date
Application number
PCT/CN2019/104823
Other languages
English (en)
French (fr)
Inventor
马亮
Original Assignee
武汉华星光电半导体显示技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 武汉华星光电半导体显示技术有限公司 filed Critical 武汉华星光电半导体显示技术有限公司
Publication of WO2020192024A1 publication Critical patent/WO2020192024A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks

Definitions

  • the present invention relates to the field of liquid crystal display technology, in particular to a display panel and a display device.
  • fingerprint or face recognition technology under the screen solves the hiding of the physical keys of the main menu; the side microphone or hidden microphone also makes the traditional microphone "disappear” from the front of the screen; the proximity sensor also exists under the screen Hidden design; breathing light is gradually replaced by other technologies such as gyroscopes, and mass production has been achieved; but for under-screen camera technology, the current mainstream design is still U/O CUT display, not a true full-screen design. Because the camera needs a high visible light transmittance, it is limited by the current camera and panel production technology and material limitations, and a true under-screen display has not yet been realized.
  • the purpose of the present invention is to provide a display panel.
  • the etching process around the light-transmitting display area can be made more uniform, and the diode W /L difference, metal wire resistance difference, EL evaporation area difference and a series of problems.
  • the present invention provides a display panel, including a display area, at least one light-transmitting display area, and at least one virtual area.
  • the display area surrounds the virtual area, and the virtual area surrounds the light-transmitting area.
  • the density of sub-pixels in the light-transmitting display area is sparser than the density of sub-pixels in the display area.
  • sub-pixels in the transparent display area are connected to the sub-pixels in the display area.
  • the shape of the virtual area is a circle or a square.
  • the sub-pixel structure includes: a substrate; a barrier layer provided on one side of the substrate; a buffer layer provided on a side of the barrier layer away from the substrate; a thin film transistor layer provided on the buffer The side of the layer away from the barrier layer; the planarization layer is provided on the side of the thin film transistor layer away from the buffer layer; the first electrode is provided on the side of the planarization layer away from the thin film transistor layer Pixel definition layer, located on the side of the first electrode away from the planarization layer.
  • the first electrode penetrates the planarization layer to the thin film transistor layer.
  • the pixel definition layer has a slot, and the slot penetrates the pixel definition layer to the first electrode.
  • the thin film transistor layer includes: a semiconductor layer provided on a side of the buffer layer away from the barrier layer; a first gate insulating layer provided on the buffer layer and the semiconductor layer; The gate is arranged on the side of the first gate insulating layer away from the buffer layer; the second gate insulating layer is arranged on the first gate insulating layer and the first gate; second The gate is arranged on the second gate insulating layer away from the first gate insulating layer; the interlayer insulating layer is arranged on the second gate and the second gate insulating layer; source and drain The pole layer is arranged on the side of the interlayer insulating layer away from the second gate insulating layer.
  • the source and drain layer includes a source and a drain; the semiconductor layer has a source region and a drain region; in the display region and the light-transmitting display region, the source penetrates the layer The interlayer insulating layer reaches the source region, and the drain level penetrates the interlayer insulating layer to the drain region; in the dummy region, the source drain layer is not connected to the source region of the semiconductor layer Or the drain area.
  • the first electrode is electrically connected to the source or drain; in the dummy area, the first electrode is not electrically connected to the source Pole or drain.
  • Another object of the present invention is to provide a display device including the display panel and a camera module, the camera module being arranged under the display panel and corresponding to the light-transmitting display area.
  • the present invention provides a display panel and a display device.
  • the virtual area is used to isolate the light-transmitting display area from the display area by setting the virtual area.
  • the virtual area does not play a display role.
  • the present invention makes the light-transmitting During the panel etching process in the display area, the load effect can be reduced and the etching can be made more uniform. This effectively solves a series of problems of diode W/L difference, metal wire resistance difference, and EL evaporation area difference caused by uneven etching of the boundary of the light-transmitting display area, and finally increases the display effect of the light-transmitting display area.
  • FIG. 1 is a schematic plan view of a display panel according to an embodiment of the invention.
  • FIG. 2 is a schematic diagram showing an enlarged structure of a transparent display area, a virtual area, and a display area of a display panel according to an embodiment of the present invention
  • FIG. 3 is a schematic cross-sectional view of a partial structure of a display panel according to an embodiment of the invention.
  • FIG. 4 is a schematic structural diagram of a square virtual area of a display panel according to an embodiment of the invention.
  • FIG. 5 is a schematic diagram of a structure of a measurement point of a display panel according to an embodiment of the present invention.
  • FIG. 6 is a schematic structural diagram of a measurement direction of a display panel according to an embodiment of the present invention.
  • FIG. 7 is a schematic diagram showing an enlarged structure of a transparent display area, a virtual area, and a display area of a display panel according to another embodiment of the present invention.
  • FIG. 8 is a schematic diagram of the structure of the display device of the present invention.
  • an embodiment of the present invention provides a display panel 100 including a display area 110, a light-transmitting display area 120 and a dummy area 130.
  • the display area 110 surrounds the virtual area 130, and the virtual area 130 surrounds the transparent display area 120; the number of the virtual area 130 is one, and the number of the transparent display area 120 is one.
  • the display area 110 and the light-transmitting display area 120 both have a plurality of sub-pixels 140, which can be used to realize the display function of the display panel 100.
  • the virtual area 130 does not have the sub-pixel 140 and therefore does not have a display function; the sub-pixel 140 of the light-transmitting display area 120 may pass through the virtual area 130 and be connected to the sub-pixel 140 of the display area 110 .
  • the dummy area 130 is used to isolate the light-transmitting display area 120 and the display area 110, so that when the light-transmitting display area 120 is etched, the load effect can be effectively reduced and the etching is more uniform .
  • the density of the sub-pixels 140 of the transparent display area 120 is sparser than that of the sub-pixels 140 of the display area 110. This facilitates more external light to pass through the transparent display area 120, and facilitates the camera module under the transparent display area 120 to collect light.
  • the display panel 100 includes a substrate 101, a barrier layer 102, a buffer layer 103, a thin film transistor layer 104, a planarization layer 105, a first electrode 106, and a pixel definition layer 107.
  • the display area 110 and the transparent display area 120 have a sub-pixel 140 structure.
  • the dummy area 130 has the same functional layer of the sub-pixel 140 as the display area 110, but the dummy area 130 does not Luminous display.
  • the substrate 101 is a flexible substrate, and the material of the substrate 101 is polyimide, and the polyimide material can make the substrate 101 of the present invention have flexible characteristics.
  • the barrier layer 102 is provided on one side of the substrate 101; the material of the barrier layer 102 is silicon oxide with the function of blocking water and oxygen, which can protect the substrate 101 from water and oxygen intrusion, and extend the thickness of the substrate 101. Service life.
  • the buffer layer 103 is disposed on the side of the barrier layer 102 away from the substrate 101; the buffer layer 103 is used to protect the substrate 101.
  • the thin film transistor layer 104 is disposed on the side of the buffer layer 103 away from the barrier layer 102; the thin film transistor layer 104 functions as a switch, and is mainly used to drive the sub-pixel 140 for display.
  • the thin film transistor layer 104 includes a semiconductor layer 1041, a first gate insulating layer 1042, a first gate 1043, a second gate insulating layer 1044, a second gate 1045, an interlayer insulating layer 1046, and a source and drain layer 1047.
  • the semiconductor layer 1041 is disposed on a side of the buffer layer 103 away from the buffer layer 103; the semiconductor layer 1041 has a drain region 1041b and a source region 1041a.
  • the first gate insulating layer 1042 is disposed on the buffer layer 103 and the semiconductor layer 1041; the first gate insulating layer 1042 mainly functions to insulate the adjacent metal layers to prevent the operation from being affected.
  • the first gate 1043 is arranged on the side of the first gate insulating layer 1042 away from the buffer layer 103; the second gate insulating layer 1044 is arranged on the first gate insulating layer 1042 and The first gate 1043; the second gate 1045 is disposed on the second gate insulating layer 1044 away from the first gate insulating layer 1042; the interlayer insulating layer 1046 is disposed on the first On the second gate 1045 and the second gate insulating layer 1044.
  • the source and drain layers 1047 are disposed on the side of the interlayer insulating layer 1046 away from the second gate insulating layer 1044.
  • the source-drain layer 1047 includes a source electrode 1047a and a drain electrode 1041b.
  • the source electrode 1047a penetrates the interlayer insulating layer 1046 to the source region 1041a
  • the drain electrode 1041b penetrates the interlayer insulating layer 1046 to The drain region 1041b.
  • the source and drain layers 1047 are not connected to the semiconductor layer 1041.
  • the dummy area 130 has the same sub-pixel functional layer as the display area 110 (Including the semiconductor layer 1041, the first gate insulating layer 1042, the first gate 1043, the second gate insulating layer 1044, the second gate 1045, the interlayer insulating layer 1046, and the source and drain layer 1047), but these functions The layers are not connected, so the sub-pixel 140 cannot be driven for display. In other words, the virtual area 130 does not have the function of luminous display.
  • the planarization layer 105 is provided on the side of the thin film transistor layer 104 away from the buffer layer 103; the first electrode 106 is provided on the side of the planarization layer 105 away from the thin film transistor layer 104.
  • the first electrode 106 penetrates the planarization layer 105 to the thin film transistor layer 104; the first electrode 106 is electrically connected to the source electrode 1047a Or the drain stage 1041b, the first electrode 106 of the present invention is electrically connected to the drain stage 1041b.
  • the first electrode 106 is an anode. In the dummy region 130, the first electrode 106 is not connected to the source and drain layer 1041.
  • the thin film transistor layer 104 is electrically connected to the anode for driving the anode.
  • the thin film transistor layer 104 is not electrically connected to the anode.
  • the pixel definition layer 107 is disposed on the side of the first electrode 106 away from the planarization layer 105.
  • the pixel definition layer 107 has a groove 1071, and the groove 1071 penetrates the pixel definition layer 107 to the first electrode 106.
  • the display panel 100 has a structure of a plurality of sub-pixels 140, and a support layer, an organic light-emitting layer, and a thin-film encapsulation layer (existing structure, not marked on the way) sequentially disposed on the sub-pixels 140.
  • the organic light emitting layer specifically includes a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer and a cathode.
  • the hole injection layer covers the anode; the hole transport layer covers the side of the hole injection layer away from the anode; the light-emitting layer covers the hole transport layer away from the anode; One side of the hole transport layer; the electron transport layer covers the side of the light emitting layer away from the hole transport layer; the electron injection layer covers the side of the electron transport layer away from the light emitting layer.
  • the cathode covers the side of the electron injection layer away from the electron transport layer.
  • the organic light emitting layer includes a red pixel unit, a green pixel unit, and a blue pixel unit.
  • each pixel of the display panel 100 is selected from one color unit of a red pixel unit, a green pixel unit and a blue pixel unit. And the color unit between adjacent pixels is different.
  • the thin-film encapsulation layer is provided on the side of the organic light-emitting layer away from the anode; the thin-film encapsulation layer is used to protect the devices of the display panel 100 from the influence of water and oxygen, thereby extending the display panel 100 Service life.
  • the structure of the dummy area 130 is similar to the structure of the display area 110 and the transparent display area 120. The specific difference is that in the dummy area 130, the source drain layer 1047 is not connected to the The semiconductor layer 1041, so the dummy area 130 cannot emit light.
  • the shape of the light-transmitting display area 120 is a circle, then the shape of the virtual area 130 is a circle; the shape of the light-transmitting display area 120 is a square, then the shape of the virtual area 130 is Square (see Figure 4). But this does not affect the innovation of the present invention.
  • the present invention continuously measures 9 key etching points (CD values) along the straight line direction 150 at A and C of the display panel 100 , And then calculate the difference between each measurement point and the key dimension of the center point. Refer to FIG. 6 for the linear direction 150 of the measurement.
  • the present invention can indeed effectively improve the etching effect of the light-transmitting display area 120 in the panel manufacturing process, and further can improve the display effect of the light-transmitting display area 120.
  • the light-transmitting display area 120 can be etched to reduce the load effect. Make the etching more uniform. This effectively solves a series of problems such as the difference in diode W/L, the difference in metal wire resistance, and the difference in EL evaporation area caused by uneven etching of the boundary of the light-transmitting display area 120.
  • another embodiment of the present invention provides a plurality of virtual areas 130, which may be four virtual areas 130 and four light-transmitting display areas 120, and each virtual area 130 surrounds each light-transmitting display area 120.
  • the shape of the virtual area 130 is a square, and the shape of the transparent display area 120 is a circle.
  • Each adjacent virtual area 130 is also provided with a sub-pixel 140 structure, which can realize light-emitting display between adjacent virtual areas 130.
  • the area of the dummy area 130 is increased, so that when the light-transmitting display area 120 is etched, the load effect can be better reduced, and the etching can be made more uniform.
  • the present invention also provides a display device 200, including the display panel 100, and the display device 200 further includes a camera module 201, which is disposed under the display panel 100 and corresponds to the transparent display District 120.
  • the display panel 100 includes a display area 110, a transparent display area 120 and a dummy area 130.
  • the display area 110 surrounds the virtual area 130, and the virtual area 130 surrounds the transparent display area 120; the display area 110 and the transparent display area 120 have a sub-pixel 140 structure, which can be used to realize display The display function of the panel 100.
  • the virtual area 130 does not have a sub-pixel 140 structure and does not have a display function; the virtual area 130 is used to isolate the transparent display area 120 and the display area 110, so that the transparent display area 120 is in progress.
  • the load effect can be reduced and the etching can be more uniform.
  • This effectively solves a series of problems such as the difference in diode W/L, the difference in metal wire resistance, and the difference in EL evaporation area caused by uneven etching of the boundary of the light-transmitting display area 120.
  • the display effect of the transparent display area 120 can be improved.
  • the density of the sub-pixels 140 of the transparent display area 120 is sparser than that of the sub-pixels 140 of the display area 110. This facilitates more external light to pass through the transparent display area 120, and facilitates the camera module 201 under the transparent display area 120 to collect light.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

一种显示面板及显示装置，包括，显示区(110)、至少一个透光显示区(120)以及至少一个虚拟区(130)，所述显示区(110)包围所述虚拟区(130)，所述虚拟区(130)包围所述透光显示区(120)；其中，所述显示区(110)与所述透光显示区(120)均具有多个子像素(140)；所述虚拟区(130)不具有发光功能。有效的解决了透光显示区(120)的边界刻蚀不均匀所造成的二极管W/L差异、金属导线电阻差异、EL蒸镀区域差异等一系列问题，并最终增加透光显示区(120)的显示效果。

Description

显示面板及显示装置 技术领域
本发明涉及液晶显示技术领域，尤其涉及一种显示面板及显示装置。
 背景技术
全面屏，作为一种全新的显示技术，由于其极高的屏占比，给人们带来全新的视觉体验和感官冲击，并成为显示厂商竞相追求的目标。
随着技术的进步，屏下指纹或人脸识别技术解决了主菜单实体键的隐藏；而侧边麦克风或隐藏式麦克风同样使传统的麦克风从屏幕正面“消失”；距离感应传感器也存在屏下隐藏式设计；呼吸灯逐步被陀螺仪等其他技术取代，并已经实现了量产；但是对于屏下摄像头技术，当前主流的设计还是U/O CUT 显示，并非真正的全面屏设计。由于摄像头需要较高的可见光透过率，受限于当前摄像头和面板生产技术及材料限制，还未实现真正的屏下显示。
为了提高摄像头的成像品质，一种常用的解决方案是将摄像头区域的像素密度降低，既能保证透光显示区域的显示功能，同时又能增加光线的透过率。但是这种设计随之带来的是显示面板制程上的负载效应造成刻蚀不均匀的问题，因此造成二极管沟道的长宽比（W/L）差异、金属导线电阻差异、EL蒸镀区域差异等一系列问题，从而造成摄像头周围光学性能的差异，影响最终显示效果。
因此，急需提供一种显示面板及显示装置，提高了显示面板摄像头周围光学性能以及显示效果，有效的解决了透光显示区的边界刻蚀不均匀所造成的二极管W/L差异、金属导线电阻差异、EL蒸镀区域差异等一系列问题。
 技术问题
本发明的目的在于，本发明提供一种显示面板，通过设置一虚拟区将显示区与透光显示区隔开，可以使透光显示区周围的刻蚀制程更加的均匀，可以有效解决二极管W/L差异、金属导线电阻差异、EL蒸镀区域差异等一系列问题。
 技术解决方案
为解决上述技术问题，本发明提供一种显示面板，包括，显示区、至少一个透光显示区以及至少一个虚拟区，所述显示区包围所述虚拟区，所述虚拟区包围所述透光显示区；其中，所述显示区与所述透光显示区具有子像素结构；但所述虚拟区不具有发光的功能。
进一步地，所述透光显示区的子像素密度比所述显示区的子像素密度稀疏。
进一步地，所述透光显示区的子像素连接所述显示区的子像素。
进一步地，所述虚拟区的形状为圆形或者方形。
进一步地，所述子像素结构包括：基板；阻隔层，设于所述基板的一侧；缓冲层，设于所述阻隔层远离所述基板的一侧；薄膜晶体管层，设于所述缓冲层远离所述阻隔层的一侧；平坦化层，设于所述薄膜晶体管层远离所述缓冲层的一侧；第一电极，设于所述平坦化层远离所述薄膜晶体管层的一侧；像素定义层，设于所述第一电极远离所述平坦化层的一侧。
进一步地，所述第一电极贯穿所述平坦化层直至所述薄膜晶体管层。所述像素定义层具有一开槽，所述开槽贯穿所述像素定义层直至所述第一电极。
进一步地，所述薄膜晶体管层包括：半导体层，设于所述缓冲层远离所述阻隔层的一侧；第一栅极绝缘层，设于所述缓冲层以及所述半导体层上；第一栅极，设于所述第一栅极绝缘层远离所述缓冲层的一侧；第二栅极绝缘层，设于所述第一栅极绝缘层以及所述第一栅极上；第二栅极，设于所述第二栅极绝缘层远离所述第一栅极绝缘层上；层间绝缘层，设于所述第二栅极以及所述第二栅极绝缘层上；源漏极层，设于所述层间绝缘层远离所述第二栅极绝缘层的一侧。
进一步地，所述源漏极层包括源极以及漏级；所述半导体层具有源极区以及漏级区；在所述显示区与所述透光显示区，所述源极贯穿所述层间绝缘层直至所述源极区，所述漏级贯穿所述层间绝缘层直至所述漏级区；在所述虚拟区，所述源漏极层不连接所述半导体层的源极区或漏级区。
进一步地，在所述显示区与所述透光显示区，所述第一电极电性连接所述源极或漏级；在所述虚拟区，所述第一电极没有电性连接所述源极或漏级。
本发明另一目的提供一种显示装置，包括所述显示面板及摄像模块，所述摄像模块设于所述显示面板下方且对应所述透光显示区。
 有益效果
本发明提出一种显示面板及显示装置，通过设置所述虚拟区用于隔绝所述透光显示区和所述显示区，所述虚拟区并不起到显示作用，本发明使所述透光显示区在进行面板刻蚀制程的时候，可以减少负载效应，使刻蚀更加的均匀。这有效的解决了透光显示区的边界刻蚀不均匀所造成的二极管W/L差异、金属导线电阻差异、EL蒸镀区域差异等一系列问题，并最终增加透光显示区的显示效果。
 附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明一实施例显示面板的平面示意图；
图2为本发明一实施例显示面板的透光显示区、虚拟区以及显示区放大的结构示意图；
图3为本发明一实施例显示面板的部分结构的截面示意图；
图4为本发明一实施例显示面板的方形虚拟区的结构示意图；
图5为本发明一实施例显示面板的测量点的结构示意图；
图6为本发明一实施例显示面板的测量方向的结构示意图；
图7为本发明另一实施例显示面板的透光显示区、虚拟区以及显示区放大的结构示意图；
图8为本发明的显示装置的结构示意图。
本发明实施方式
以下是各实施例的说明是参考附加的图式，用以例示本发明可以用实施的特定实施例。本发明所提到的方向用语，例如上、下、前、后、左、右、内、外、侧等，仅是参考附图式的方向。本发明提到的元件名称，例如第一、第二等，仅是区分不同的元部件，可以更好的表达。在图中，结构相似的单元以相同标号表示。
本文将参照附图来详细描述本发明的实施例。本发明可以表现为许多不同形式，本发明不应仅被解释为本文阐述的具体实施例。本发明提供实施例是为了解释本发明的实际应用，从而使本领域其他技术人员能够理解本发明的各种实施例和适合于特定预期应用的各种修改方案。
如图1所示，本发明的一实施例提供一种显示面板100，包括，显示区110、透光显示区120以及虚拟区130。
所述显示区110包围所述虚拟区130，所述虚拟区130包围所述透光显示区120；所述虚拟区130数量为1，所述透光显示区120数量为1。
如图2所示，所述显示区110与所述透光显示区120均具有多个子像素140，可以用于实现显示面板100的显示功能。
所述虚拟区130不具有所述子像素140，因此并不具有显示功能；所述透光显示区120的子像素140可以穿过所述虚拟区130连接至所述显示区110的子像素140。所述虚拟区130用于隔绝所述透光显示区120和所述显示区110，使所述透光显示区120在进行刻蚀的时候，可以有效的减少负载效应，使刻蚀更加的均匀。
所述透光显示区120的子像素140密度比所述显示区110的子像素140密度稀疏。这便于外界光线可更多的透过所述透光显示区120，便于所述透光显示区120下的摄像模块采集光线。
如图3所示，所述显示面板100包括：基板101、阻隔层102、缓冲层103、薄膜晶体管层104、平坦化层105、第一电极106以及像素定义层107。
所述显示区110与所述透光显示区120具有子像素140结构，所述虚拟区130具有与所述显示区110的相同的子像素140的功能层，但所述虚拟区130并不会发光显示。
所述基板101为柔性基板，所述基板101的材料为聚酰亚胺，所述聚酰亚胺材料可以使本发明的基板101具有柔性特性。
所述阻隔层102设于所述基板101的一侧；所述阻隔层102的材料为具有阻隔水氧功能的氧化硅，可以保护所述基板101不被水氧入侵，延长所述基板101的使用寿命。
所述缓冲层103设于所述阻隔层102远离所述基板101的一侧；所述缓冲层103用以保护所述基板101。
所述薄膜晶体管层104设于所述缓冲层103远离所述阻隔层102的一侧；所述薄膜晶体管层104起到开关的作用，主要用于驱动所述子像素140进行显示。
所述薄膜晶体管层104包括：半导体层1041、第一栅极绝缘层1042、第一栅极1043、第二栅极绝缘层1044、第二栅极1045、层间绝缘层1046以及源漏极层1047。
所述半导体层1041设于所述缓冲层103远离所述缓冲层103的一侧；所述半导体层1041具有一漏级区1041b以及源极区1041a。
所述第一栅极绝缘层1042设于所述缓冲层103以及所述半导体层1041上；所述第一栅极绝缘层1042主要起到将相邻的金属层之间绝缘，防止影响工作。
所述第一栅极1043设于所述第一栅极绝缘层1042远离所述缓冲层103的一侧；所述第二栅极绝缘层1044设于所述第一栅极绝缘层1042以及所述第一栅极1043上；所述第二栅极1045设于所述第二栅极绝缘层1044远离所述第一栅极绝缘层1042上；所述层间绝缘层1046设于所述第二栅极1045以及所述第二栅极绝缘层1044上。
所述源漏极层1047设于所述层间绝缘层1046远离所述第二栅极绝缘层1044的一侧。所述源漏极层1047包括源极1047a以及漏级1041b。
在所述显示区110与所述透光显示区120，所述源极1047a贯穿所述层间绝缘层1046直至所述源极区1041a，所述漏级1041b贯穿所述层间绝缘层1046直至所述漏级区1041b。但在所述虚拟区130，所述源漏极层1047并不连接至所述半导体层1041，在本实施例中，虽然所述虚拟区130具有与所述显示区110相同的子像素功能层（包括半导体层1041、第一栅极绝缘层1042、第一栅极1043、第二栅极绝缘层1044、第二栅极1045、层间绝缘层1046以及源漏极层1047），但这些功能层并未连接起来，因此无法驱动所述子像素140进行显示。也就是说，所述虚拟区130不具有发光显示的功能。
所述平坦化层105设于所述薄膜晶体管层104远离所述缓冲层103的一侧；所述第一电极106设于所述平坦化层105远离所述薄膜晶体管层104的一侧。
在所述显示区110与所述透光显示区120，所述第一电极106贯穿所述平坦化层105直至所述薄膜晶体管层104；所述第一电极106电性连接所述源极1047a或所述漏级1041b，本发明所述第一电极106电性连接所述漏级1041b。所述第一电极106为阳极。在所述虚拟区130，所述第一电极106并未连接所述源漏极层1041。
这样，在所述显示区110与所述透光显示区120，所述薄膜晶体管层104与所述阳极电性连接，用以驱动所述阳极。但是在所述虚拟区130，所述薄膜晶体管层104不会与所述阳极电性连接。
所述像素定义层107设于所述第一电极106远离所述平坦化层105的一侧。
所述像素定义层107具有一开槽1071，所述开槽1071贯穿所述像素定义层107直至所述第一电极106。
所述显示面板100具有多个子像素140结构，以及依次设于所述子像素140上的支撑层、有机发光层以及薄膜封装层（现有结构，并未在途中标注）。
所述有机发光层具体的包括空穴注入层、空穴传输层、发光层、电子传输层、电子注入层以及阴极。
所述空穴注入层覆于所述阳极上；所述空穴传输层覆于所述空穴注入层远离所述阳极的一侧；所述发光层覆于所述空穴传输层远离所述空穴传输层的一侧；所述电子传输层覆于所述发光层远离所述空穴传输层的一侧；所述电子注入层覆于所述电子传输层远离所述发光层的一侧；所述阴极覆于所述电子注入层远离所述电子传输层的一侧。
所述有机发光层包括红色像素单元、绿色像素单元和蓝色像素单元。一般所述显示面板100的每个像素均选自红色像素单元、绿色像素单元和蓝色像素单元的其中一种颜色单元。并且在相邻像素间的颜色单元不相同。
所述薄膜封装层设于所述有机发光层远离所述阳极的一侧；所述薄膜封装层用以保护所述显示面板100的器件不受水氧影响，进而可以延长所述显示面板100的使用寿命。
所述虚拟区130的结构与所述显示区110与所述透光显示区120结构相似，具体不同之处在于，在所述虚拟区130，所述源漏极层1047并没有进行连接所述半导体层1041，因此所述虚拟区130不能发光显示。
参见图2，所述透光显示区120的形状为圆形，则所述虚拟区130的形状为圆形；所述透光显示区120的形状为方形，则所述虚拟区130的形状为方形（参见图4）。但是这并不影响本发明的创新点。
如图5所示，具体地，本发明为了验证所述虚拟区130的创新点，在显示面板100的的A和C处沿直线方向150连续测量9个点刻蚀的关键尺寸（CD值），然后计算每个测量点与中心点刻蚀关键尺寸的差值。所述测量的直线方向150参照图6。
表1.未设有虚拟区的显示面板
  1 2 3 4 5 6 7 8 9
A 1.75 1.35 1.18 1.01 0.94 0.98 0.94 0.87 0.81
C 1.77 1.55 1.22 0.94 0.76 0.82 0.77 0.70 0.61
表2.本发明设有虚拟区的显示面板
  1 2 3 4 5 6 7 8 9
A 1.55 1.04 0.74 0.64 0.53 0.52 0.42 0.38 0.30
C 1.28 0.97 0.80 0.66 0.60 0.60 0.54 0.52 0.44
由表1和表2可以看出，本发明设有虚拟区130的显示面板100，测量的刻蚀的差值比未设有虚拟区130的显示面板的差值小的多，这也说明了本发明显示面板100刻蚀制程的更加均匀。
这也证明了本发明创新点的实用，本发明的确可以有效的提高透光显示区120在面板制程中刻蚀的效果，进而可以提高透光显示区120的显示效果。
在本实施例中，通过设置所述虚拟区130用于隔绝所述透光显示区120和所述显示区110，使所述透光显示区120在进行刻蚀的时候，可以减少负载效应，使刻蚀更加的均匀。这有效的解决了透光显示区120的边界刻蚀不均匀所造成的二极管W/L差异、金属导线电阻差异、EL蒸镀区域差异等一系列问题。
如图7所示，本发明另一个实施例提供多个虚拟区130，可以为4个虚拟区130，4个透光显示区120，每个虚拟区130包围每个透光显示区120。所述虚拟区130的形状为方形，所述透光显示区120的形状为圆形。
每个相邻的虚拟区130之间还设有子像素140结构，这可以实现相邻虚拟区130之间可以进行发光显示。
另一实施例的所述虚拟区130域面积增大，使得所述透光显示区120在进行刻蚀的时候，可以更好的减少负载效应，使刻蚀更加的均匀。
如图8所示，本发明还提供一种显示装置200，包括所述显示面板100，所述显示装置200还包括一摄像模块201，设于所述显示面板100下方且对应所述透光显示区120。
所述显示面板100包括显示区110、透光显示区120以及虚拟区130。所述显示区110包围所述虚拟区130，所述虚拟区130包围所述透光显示区120；所述显示区110与所述透光显示区120具有子像素140结构，可以用于实现显示面板100的显示功能。
所述虚拟区130不具有子像素140结构，并不具有显示功能；所述虚拟区130用于隔绝所述透光显示区120和所述显示区110，使所述透光显示区120在进行刻蚀的时候，可以减少负载效应，使刻蚀更加的均匀。这有效的解决了透光显示区120的边界刻蚀不均匀所造成的二极管W/L差异、金属导线电阻差异、EL蒸镀区域差异等一系列问题。最终可以提高所述透光显示区120的显示效果。
所述透光显示区120的子像素140密度比所述显示区110的子像素140密度稀疏。这便于外界光线可更多的透过所述透光显示区120，便于所述透光显示区120下的摄像模块201采集光线。
本发明的技术范围不仅仅局限于所述说明中的内容，本领域技术人员可以在不脱离本发明技术思想的前提下，对所述实施例进行多种变形和修改，而这些变形和修改均应当属于本发明的范围内。

Claims (12)

  1.   一种显示面板，其中，包括，显示区、至少一个透光显示区以及至少一个虚拟区，
    所述显示区包围所述虚拟区，所述虚拟区包围所述透光显示区；
    其中，所述显示区与所述透光显示区均具有多个子像素；
    所述虚拟区不具有发光功能。
  2.   根据权利要求1所述的显示面板，其中
    所述透光显示区的子像素密度比所述显示区的子像素密度稀疏。
  3.   根据权利要求1所述的显示面板，其中，
    所述透光显示区的子像素连接所述显示区的子像素。
  4.   根据权利要求1所述的显示面板，其中，
    所述虚拟区的形状为圆形或者方形。
  5.   根据权利要求1所述的显示面板，其中，包括
    基板；
    阻隔层，设于所述基板的一侧；
    缓冲层，设于所述阻隔层远离所述基板的一侧；
    薄膜晶体管层，设于所述缓冲层远离所述阻隔层的一侧；
    平坦化层，设于所述薄膜晶体管层远离所述缓冲层的一侧；
    第一电极，设于所述平坦化层远离所述薄膜晶体管层的一侧；
    像素定义层，设于所述第一电极远离所述平坦化层的一侧。
  6.   根据权利要求5所述的显示面板，其中，
    所述第一电极贯穿所述平坦化层直至所述薄膜晶体管层。
    所述像素定义层具有一开槽，所述开槽贯穿所述像素定义层直至所述第一电极。
  7.   根据权利要求5所述的显示面板，其中，所述薄膜晶体管层包括：
    半导体层，设于所述缓冲层远离所述阻隔层的一侧；
    第一栅极绝缘层，设于所述缓冲层以及所述半导体层上；
    第一栅极，设于所述第一栅极绝缘层远离所述缓冲层的一侧；
    第二栅极绝缘层，设于所述第一栅极绝缘层以及所述第一栅极上；
    第二栅极，设于所述第二栅极绝缘层远离所述第一栅极绝缘层上；
    层间绝缘层，设于所述第二栅极以及所述第二栅极绝缘层上；
    源漏极层，设于所述层间绝缘层远离所述第二栅极绝缘层的一侧。
  8.   根据权利要求7所述的显示面板，其中，
    所述源漏极层包括源极以及漏级；
    所述半导体层具有源极区以及漏级区；
    在所述显示区与所述透光显示区，所述源极贯穿所述层间绝缘层直至所述源极区，所述漏级贯穿所述层间绝缘层直至所述漏级区；
    在所述虚拟区，所述源漏极层并不连接所述半导体层的源极区或漏级区。
  9.   根据权利要求7所述的显示面板，其中，
    在所述显示区与所述透光显示区，所述第一电极电性连接所述源极或漏级；
    在所述虚拟区，所述第一电极没有电性连接所述源极或漏级。
  10. 一种显示装置，包括如权利要求1的显示面板，所述显示装置还包括一摄像模块，设于所述显示面板下方且对应所述透光显示区。
  11. 根据权利要求10所述的显示装置，其中，所述透光显示区的子像素密度比所述显示区的子像素密度稀疏。
  12. 根据权利要求10所述的显示装置，其中，所述透光显示区的子像素连接所述显示区的子像素。
PCT/CN2019/104823 2019-03-27 2019-09-09 显示面板及显示装置 WO2020192024A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201910238096.8A CN110021646B (zh) 2019-03-27 2019-03-27 显示面板及显示装置
CN201910238096.8 2019-03-27

Publications (1)

Publication Number Publication Date
WO2020192024A1 true WO2020192024A1 (zh) 2020-10-01

Family

ID=67190096

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2019/104823 WO2020192024A1 (zh) 2019-03-27 2019-09-09 显示面板及显示装置

Country Status (2)

Country Link
CN (1) CN110021646B (zh)
WO (1) WO2020192024A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114864640A (zh) * 2022-04-20 2022-08-05 武汉华星光电半导体显示技术有限公司 一种显示面板及显示装置
CN115295560A (zh) * 2022-08-05 2022-11-04 厦门天马显示科技有限公司 显示面板和显示装置

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110021646B (zh) * 2019-03-27 2021-06-22 武汉华星光电半导体显示技术有限公司 显示面板及显示装置
CN110398863A (zh) * 2019-07-22 2019-11-01 深圳市华星光电半导体显示技术有限公司 显示面板
CN110571252A (zh) * 2019-08-20 2019-12-13 武汉华星光电半导体显示技术有限公司 阵列基板、阵列基板制造方法及显示装置
CN111752417B (zh) * 2020-06-29 2022-06-28 武汉天马微电子有限公司 一种显示面板及显示装置
WO2022226897A1 (zh) * 2021-04-29 2022-11-03 京东方科技集团股份有限公司 显示面板及其制作方法和显示装置
WO2023004574A1 (zh) * 2021-07-27 2023-02-02 京东方科技集团股份有限公司 显示面板、显示装置及显示驱动方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9245936B2 (en) * 2012-11-19 2016-01-26 Samsung Display Co., Ltd. Multi-display apparatus
CN207947006U (zh) * 2018-03-31 2018-10-09 昆山国显光电有限公司 显示面板及显示装置
CN109360840A (zh) * 2018-09-28 2019-02-19 武汉天马微电子有限公司 有机发光显示面板和显示装置
CN110021646A (zh) * 2019-03-27 2019-07-16 武汉华星光电半导体显示技术有限公司 显示面板及显示装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103456765B (zh) * 2013-09-10 2015-09-16 深圳市华星光电技术有限公司 有源式有机电致发光器件背板及其制作方法
CN109216349B (zh) * 2018-10-31 2020-08-25 厦门天马微电子有限公司 显示面板和显示装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9245936B2 (en) * 2012-11-19 2016-01-26 Samsung Display Co., Ltd. Multi-display apparatus
CN207947006U (zh) * 2018-03-31 2018-10-09 昆山国显光电有限公司 显示面板及显示装置
CN109360840A (zh) * 2018-09-28 2019-02-19 武汉天马微电子有限公司 有机发光显示面板和显示装置
CN110021646A (zh) * 2019-03-27 2019-07-16 武汉华星光电半导体显示技术有限公司 显示面板及显示装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114864640A (zh) * 2022-04-20 2022-08-05 武汉华星光电半导体显示技术有限公司 一种显示面板及显示装置
CN115295560A (zh) * 2022-08-05 2022-11-04 厦门天马显示科技有限公司 显示面板和显示装置

Also Published As

Publication number Publication date
CN110021646A (zh) 2019-07-16
CN110021646B (zh) 2021-06-22

Similar Documents

Publication Publication Date Title
WO2020192024A1 (zh) 显示面板及显示装置
TWI478126B (zh) Surface light display device
US11329104B2 (en) Display panel and display device
KR101967600B1 (ko) 플렉서블 유기전계발광소자 및 그 제조방법
WO2020206810A1 (zh) 双面显示面板及其制备方法
WO2020107724A1 (zh) Oled显示面板
JP5153015B2 (ja) 面発光表示装置
US11081663B2 (en) Organic electroluminescent display panel with auxiliary electrodes, method for manufacturing the same, and display device using the same
KR20140074037A (ko) 유기전계 발광소자 및 그 제조방법
KR101271521B1 (ko) 유기전계발광소자
JP6397654B2 (ja) 有機ｅｌ発光装置
KR20110021090A (ko) 유기전계 발광소자 제조 용 쉐도우 마스크
KR20120133955A (ko) 유기전계 발광소자 및 이의 제조 방법
US11563064B2 (en) Array substrate, display device, and method for fabricating an array substrate
WO2021078175A1 (zh) 显示基板及其制备方法、显示面板
JP2009272081A (ja) 有機エレクトロルミネッセンス装置
KR20140033769A (ko) 유기전계발광소자 및 그 제조방법
CN110212111B (zh) 显示基板及制作方法、显示面板、显示装置
US20210327912A1 (en) Display panel and method for fabricating same
WO2020006810A1 (zh) 一种oled显示面板及其封装方法
WO2019242083A1 (zh) 显示面板及显示装置
KR20110015757A (ko) 유기전계발광 표시장치 및 그 제조방법
WO2016119306A1 (zh) Oled像素结构
WO2021155627A1 (zh) Oled 显示装置
JP2013080661A (ja) 表示装置及びその製造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19921194

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 19921194

Country of ref document: EP

Kind code of ref document: A1