JP2014205902A - 金属酸化物膜及び金属酸化物膜の成膜方法 - Google Patents

金属酸化物膜及び金属酸化物膜の成膜方法 Download PDF

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JP2014205902A
JP2014205902A JP2013230075A JP2013230075A JP2014205902A JP 2014205902 A JP2014205902 A JP 2014205902A JP 2013230075 A JP2013230075 A JP 2013230075A JP 2013230075 A JP2013230075 A JP 2013230075A JP 2014205902 A JP2014205902 A JP 2014205902A
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metal oxide
oxide film
film
diffraction pattern
observed
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JP2014205902A5 (ja
Inventor
高橋　正弘
Masahiro Takahashi
正弘 高橋
拓也 廣橋
Takuya Hirohashi
拓也 廣橋
将志 津吹
Masashi Tsubuki
将志 津吹
典隆 石原
Noritaka Ishihara
典隆 石原
将志 太田
Masashi Ota
将志 太田
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2013230075A priority Critical patent/JP2014205902A/ja
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Publication of JP2014205902A5 publication Critical patent/JP2014205902A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
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    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/207—Diffractometry using detectors, e.g. using a probe in a central position and one or more displaceable detectors in circumferential positions
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
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    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
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    • H01L21/02551—Group 12/16 materials
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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  • Geometry (AREA)
  • Thin Film Transistor (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
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JP2013230075A 2012-11-08 2013-11-06 金属酸化物膜及び金属酸化物膜の成膜方法 Withdrawn JP2014205902A (ja)

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JP2013230075A JP2014205902A (ja) 2012-11-08 2013-11-06 金属酸化物膜及び金属酸化物膜の成膜方法

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JP2012245992 2012-11-08
JP2012245992 2012-11-08
JP2013016242 2013-01-30
JP2013016242 2013-01-30
JP2013056768 2013-03-19
JP2013056768 2013-03-19
JP2013230075A JP2014205902A (ja) 2012-11-08 2013-11-06 金属酸化物膜及び金属酸化物膜の成膜方法

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JP2015085639A Division JP2015149505A (ja) 2012-11-08 2015-04-20 金属酸化物膜
JP2015085640A Division JP5894694B2 (ja) 2012-11-08 2015-04-20 半導体装置
JP2015085638A Division JP5894693B2 (ja) 2012-11-08 2015-04-20 金属酸化物膜の作製方法
JP2015180550A Division JP5919428B2 (ja) 2012-11-08 2015-09-14 金属酸化物膜
JP2015230315A Division JP5894702B1 (ja) 2012-11-08 2015-11-26 金属酸化物膜
JP2017050310A Division JP6246404B2 (ja) 2012-11-08 2017-03-15 半導体装置及び半導体装置の作製方法
JP2018111313A Division JP6502605B2 (ja) 2012-11-08 2018-06-11 トランジスタ

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JP2014205902A true JP2014205902A (ja) 2014-10-30
JP2014205902A5 JP2014205902A5 (ja) 2017-04-20

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JP2013230075A Withdrawn JP2014205902A (ja) 2012-11-08 2013-11-06 金属酸化物膜及び金属酸化物膜の成膜方法
JP2015085640A Active JP5894694B2 (ja) 2012-11-08 2015-04-20 半導体装置
JP2015085638A Active JP5894693B2 (ja) 2012-11-08 2015-04-20 金属酸化物膜の作製方法
JP2015085639A Withdrawn JP2015149505A (ja) 2012-11-08 2015-04-20 金属酸化物膜
JP2015180550A Active JP5919428B2 (ja) 2012-11-08 2015-09-14 金属酸化物膜
JP2015230315A Active JP5894702B1 (ja) 2012-11-08 2015-11-26 金属酸化物膜
JP2017050310A Active JP6246404B2 (ja) 2012-11-08 2017-03-15 半導体装置及び半導体装置の作製方法
JP2018111313A Active JP6502605B2 (ja) 2012-11-08 2018-06-11 トランジスタ
JP2019053970A Active JP6556396B1 (ja) 2012-11-08 2019-03-21 表示装置
JP2019053969A Active JP6556395B2 (ja) 2012-11-08 2019-03-21 トランジスタ
JP2019127461A Active JP6634539B2 (ja) 2012-11-08 2019-07-09 トランジスタ
JP2019226526A Active JP6905042B2 (ja) 2012-11-08 2019-12-16 トランジスタ
JP2021105134A Active JP7193584B2 (ja) 2012-11-08 2021-06-24 トランジスタ、及び表示装置
JP2022196356A Active JP7475422B2 (ja) 2012-11-08 2022-12-08 表示装置
JP2024065966A Active JP7676094B2 (ja) 2012-11-08 2024-04-16 表示装置
JP2025075045A Pending JP2025111721A (ja) 2012-11-08 2025-04-29 表示装置

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JP2015085640A Active JP5894694B2 (ja) 2012-11-08 2015-04-20 半導体装置
JP2015085638A Active JP5894693B2 (ja) 2012-11-08 2015-04-20 金属酸化物膜の作製方法
JP2015085639A Withdrawn JP2015149505A (ja) 2012-11-08 2015-04-20 金属酸化物膜
JP2015180550A Active JP5919428B2 (ja) 2012-11-08 2015-09-14 金属酸化物膜
JP2015230315A Active JP5894702B1 (ja) 2012-11-08 2015-11-26 金属酸化物膜
JP2017050310A Active JP6246404B2 (ja) 2012-11-08 2017-03-15 半導体装置及び半導体装置の作製方法
JP2018111313A Active JP6502605B2 (ja) 2012-11-08 2018-06-11 トランジスタ
JP2019053970A Active JP6556396B1 (ja) 2012-11-08 2019-03-21 表示装置
JP2019053969A Active JP6556395B2 (ja) 2012-11-08 2019-03-21 トランジスタ
JP2019127461A Active JP6634539B2 (ja) 2012-11-08 2019-07-09 トランジスタ
JP2019226526A Active JP6905042B2 (ja) 2012-11-08 2019-12-16 トランジスタ
JP2021105134A Active JP7193584B2 (ja) 2012-11-08 2021-06-24 トランジスタ、及び表示装置
JP2022196356A Active JP7475422B2 (ja) 2012-11-08 2022-12-08 表示装置
JP2024065966A Active JP7676094B2 (ja) 2012-11-08 2024-04-16 表示装置
JP2025075045A Pending JP2025111721A (ja) 2012-11-08 2025-04-29 表示装置

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US (8) US9881939B2 (enExample)
JP (16) JP2014205902A (enExample)
KR (11) KR20160042465A (enExample)
CN (5) CN109065553B (enExample)
DE (2) DE112013005331T5 (enExample)
IN (1) IN2015DN03772A (enExample)
TW (5) TWI553716B (enExample)
WO (1) WO2014073585A1 (enExample)

Cited By (8)

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JP2015046499A (ja) * 2013-08-28 2015-03-12 三菱電機株式会社 薄膜トランジスタおよびその製造方法ならびに液晶表示装置
JP2017123485A (ja) * 2012-11-08 2017-07-13 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
WO2017125797A1 (ja) * 2016-01-18 2017-07-27 株式会社半導体エネルギー研究所 金属酸化物膜及びその形成方法、ならびに半導体装置
JP2017188674A (ja) * 2016-04-01 2017-10-12 株式会社半導体エネルギー研究所 複合酸化物半導体、およびその作製方法
WO2018221294A1 (ja) * 2017-05-31 2018-12-06 シャープ株式会社 アクティブマトリクス基板およびその製造方法
JP2020205437A (ja) * 2016-03-22 2020-12-24 株式会社半導体エネルギー研究所 トランジスタ
JP2025036491A (ja) * 2016-05-19 2025-03-14 株式会社半導体エネルギー研究所 複合酸化物半導体
WO2025186692A1 (ja) * 2024-03-08 2025-09-12 株式会社半導体エネルギー研究所 半導体装置の作製方法

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KR102495290B1 (ko) 2012-12-28 2023-02-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9153650B2 (en) 2013-03-19 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor
US10304859B2 (en) 2013-04-12 2019-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide film on an oxide semiconductor film
TWI652822B (zh) 2013-06-19 2019-03-01 日商半導體能源研究所股份有限公司 氧化物半導體膜及其形成方法
US9244025B2 (en) * 2013-07-05 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Transmission electron diffraction measurement apparatus and method for measuring transmission electron diffraction pattern
TWI608523B (zh) 2013-07-19 2017-12-11 半導體能源研究所股份有限公司 Oxide semiconductor film, method of manufacturing oxide semiconductor film, and semiconductor device
US9496330B2 (en) 2013-08-02 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
KR102317297B1 (ko) 2014-02-19 2021-10-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물, 반도체 장치, 모듈, 및 전자 장치
WO2015132697A1 (en) 2014-03-07 2015-09-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10043913B2 (en) 2014-04-30 2018-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor film, semiconductor device, display device, module, and electronic device
TWI663726B (zh) * 2014-05-30 2019-06-21 Semiconductor Energy Laboratory Co., Ltd. 半導體裝置、模組及電子裝置
US9633710B2 (en) 2015-01-23 2017-04-25 Semiconductor Energy Laboratory Co., Ltd. Method for operating semiconductor device
US9837547B2 (en) 2015-05-22 2017-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide conductor and display device including the semiconductor device
JP6915538B2 (ja) * 2015-08-24 2021-08-04 日本ゼオン株式会社 非水系二次電池機能層用組成物、非水系二次電池用機能層、及び非水系二次電池
KR102796428B1 (ko) 2016-02-12 2025-04-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 상기 반도체 장치를 포함하는 표시 장치
JP6894886B2 (ja) * 2016-03-28 2021-06-30 三井金属鉱業株式会社 スパッタリングターゲット材及びその製造方法、並びにスパッタリングターゲット
US11302717B2 (en) * 2016-04-08 2022-04-12 Semiconductor Energy Laboratory Co., Ltd. Transistor and method for manufacturing the same
CN107473179B (zh) 2016-06-08 2019-04-23 清华大学 一种表征二维纳米材料的方法
CN107481913B (zh) 2016-06-08 2019-04-02 清华大学 一种电子束加工系统
CN107479330B (zh) * 2016-06-08 2019-02-05 清华大学 一种采用电子束的光刻方法
CN107481914B (zh) 2016-06-08 2023-06-06 清华大学 一种透射型低能量电子显微系统
TWI771281B (zh) * 2016-07-11 2022-07-21 日商半導體能源硏究所股份有限公司 金屬氧化物及包括該金屬氧化物的半導體裝置
WO2018061969A1 (ja) * 2016-09-27 2018-04-05 シャープ株式会社 半導体装置およびその製造方法
KR102470206B1 (ko) 2017-10-13 2022-11-23 삼성디스플레이 주식회사 금속 산화막의 제조 방법 및 금속 산화막을 포함하는 표시 소자
JPWO2019111105A1 (ja) 2017-12-06 2020-12-03 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
WO2019162807A1 (ja) * 2018-02-23 2019-08-29 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
CN109655476A (zh) * 2019-01-15 2019-04-19 中国大唐集团科学技术研究院有限公司华中电力试验研究院 一种氧化膜截面完整形貌制备方法
JP7672968B2 (ja) * 2019-02-22 2025-05-08 株式会社半導体エネルギー研究所 トランジスタ
US12205992B2 (en) 2019-03-28 2025-01-21 Idemitsu Kosan Co., Ltd. Crystalline oxide thin film, multilayer body and thin film transistor
US11379231B2 (en) 2019-10-25 2022-07-05 Semiconductor Energy Laboratory Co., Ltd. Data processing system and operation method of data processing system
WO2021090829A1 (ja) * 2019-11-05 2021-05-14 三菱マテリアル株式会社 高抵抗透明膜
CN113073305A (zh) * 2020-01-06 2021-07-06 重庆康佳光电技术研究院有限公司 一种沉积设备及其沉积方法
KR102255421B1 (ko) * 2020-08-11 2021-05-24 충남대학교산학협력단 단결정 산화갈륨의 결함 평가방법
JP2022049604A (ja) * 2020-09-16 2022-03-29 キオクシア株式会社 半導体装置及び半導体記憶装置
JP7375726B2 (ja) * 2020-10-20 2023-11-08 株式会社オートネットワーク技術研究所 ドア用配線モジュール及び複合サービスホールカバー
EP4016062B1 (en) * 2020-12-18 2023-08-23 Bruker Nano GmbH Method of processing an edx/xrf map and a corresponding image processing device
CN112782203B (zh) * 2021-02-22 2024-02-20 长江存储科技有限责任公司 一种晶相结构的判断方法及晶相标定模板
KR102782983B1 (ko) 2021-05-24 2025-03-18 에이디알씨 주식회사 박막 트랜지스터 및 그 제조 방법과 전자 장치
WO2025173439A1 (ja) * 2024-02-14 2025-08-21 株式会社コベルコ科研 結晶性酸化物半導体薄膜、積層体、およびスパッタリングターゲット

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006165529A (ja) * 2004-11-10 2006-06-22 Canon Inc 非晶質酸化物、及び電界効果型トランジスタ
JP2008042067A (ja) * 2006-08-09 2008-02-21 Canon Inc 酸化物半導体膜のドライエッチング方法
JP2010226101A (ja) * 2009-02-27 2010-10-07 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP2011029630A (ja) * 2009-06-30 2011-02-10 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
WO2011027467A1 (ja) * 2009-09-04 2011-03-10 株式会社 東芝 薄膜トランジスタ及びその製造方法
JP2012186383A (ja) * 2011-03-07 2012-09-27 Dainippon Printing Co Ltd 薄膜トランジスタの製造方法

Family Cites Families (193)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60198861A (ja) 1984-03-23 1985-10-08 Fujitsu Ltd 薄膜トランジスタ
JPH0244256B2 (ja) 1987-01-28 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244258B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPS63210023A (ja) 1987-02-24 1988-08-31 Natl Inst For Res In Inorg Mater ＩｎＧａＺｎ↓４Ｏ↓７で示される六方晶系の層状構造を有する化合物およびその製造法
JPH0244260B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244262B2 (ja) 1987-02-27 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244263B2 (ja) 1987-04-22 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH029A (ja) * 1987-06-08 1990-01-05 Seiko Epson Corp 液晶ライトバルブの駆動方法
JPH05251705A (ja) 1992-03-04 1993-09-28 Fuji Xerox Co Ltd 薄膜トランジスタ
JP3479375B2 (ja) 1995-03-27 2003-12-15 科学技術振興事業団 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとｐｎ接合を形成した金属酸化物半導体装置およびそれらの製造方法
EP0820644B1 (en) 1995-08-03 2005-08-24 Koninklijke Philips Electronics N.V. Semiconductor device provided with transparent switching element
JP3625598B2 (ja) 1995-12-30 2005-03-02 三星電子株式会社 液晶表示装置の製造方法
JP4301592B2 (ja) * 1998-01-16 2009-07-22 三菱マテリアル株式会社 窒化物半導体層付き基板の製造方法
JP4170454B2 (ja) 1998-07-24 2008-10-22 Ｈｏｙａ株式会社 透明導電性酸化物薄膜を有する物品及びその製造方法
JP2000150861A (ja) 1998-11-16 2000-05-30 Tdk Corp 酸化物薄膜
JP3276930B2 (ja) 1998-11-17 2002-04-22 科学技術振興事業団 トランジスタ及び半導体装置
TW460731B (en) 1999-09-03 2001-10-21 Ind Tech Res Inst Electrode structure and production method of wide viewing angle LCD
JP3786566B2 (ja) * 2000-06-27 2006-06-14 株式会社東芝 半導体装置及びその製造方法
KR100821456B1 (ko) * 2000-08-14 2008-04-11 샌디스크 쓰리디 엘엘씨 밀집한 어레이 및 전하 저장 장치와, 그 제조 방법
JP4089858B2 (ja) 2000-09-01 2008-05-28 国立大学法人東北大学 半導体デバイス
KR20020038482A (ko) 2000-11-15 2002-05-23 모리시타 요이찌 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널
JP3997731B2 (ja) 2001-03-19 2007-10-24 富士ゼロックス株式会社 基材上に結晶性半導体薄膜を形成する方法
JP2002289859A (ja) 2001-03-23 2002-10-04 Minolta Co Ltd 薄膜トランジスタ
JP2002314070A (ja) * 2001-04-17 2002-10-25 Toshiba Corp 半導体装置及びその製造方法
JP3867524B2 (ja) * 2001-07-05 2007-01-10 株式会社日立製作所 電子線を用いた観察装置及び観察方法
JP3925839B2 (ja) 2001-09-10 2007-06-06 シャープ株式会社 半導体記憶装置およびその試験方法
JP4090716B2 (ja) 2001-09-10 2008-05-28 雅司 川崎 薄膜トランジスタおよびマトリクス表示装置
JP4164562B2 (ja) 2002-09-11 2008-10-15 独立行政法人科学技術振興機構 ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ
WO2003040441A1 (fr) 2001-11-05 2003-05-15 Japan Science And Technology Agency Film mince monocristallin homologue a super-reseau naturel, procede de preparation et dispositif dans lequel est utilise ledit film mince monocristallin
JP4083486B2 (ja) 2002-02-21 2008-04-30 独立行政法人科学技術振興機構 ＬｎＣｕＯ（Ｓ，Ｓｅ，Ｔｅ）単結晶薄膜の製造方法
CN1445821A (zh) 2002-03-15 2003-10-01 三洋电机株式会社 ZnO膜和ZnO半导体层的形成方法、半导体元件及其制造方法
JP3933591B2 (ja) 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
US7339187B2 (en) 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
JP2004022625A (ja) 2002-06-13 2004-01-22 Murata Mfg Co Ltd 半導体デバイス及び該半導体デバイスの製造方法
US7105868B2 (en) 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
US6737364B2 (en) * 2002-10-07 2004-05-18 International Business Machines Corporation Method for fabricating crystalline-dielectric thin films and devices formed using same
US7067843B2 (en) 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
JP4166105B2 (ja) 2003-03-06 2008-10-15 シャープ株式会社 半導体装置およびその製造方法
JP2004273732A (ja) 2003-03-07 2004-09-30 Sharp Corp アクティブマトリクス基板およびその製造方法
JP4108633B2 (ja) 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
US7262463B2 (en) 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
KR20060122963A (ko) * 2004-02-18 2006-11-30 가부시키가이샤 닛폰 쇼쿠바이 금속 산화물 입자 및 그것의 용도
US7282782B2 (en) 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
CN1998087B (zh) 2004-03-12 2014-12-31 独立行政法人科学技术振兴机构 非晶形氧化物和薄膜晶体管
US7145174B2 (en) 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
US7297977B2 (en) 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
US7211825B2 (en) 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
DE602005025834D1 (de) 2004-08-13 2011-02-24 St Microelectronics Sa Bildsensor
JP2006100760A (ja) 2004-09-02 2006-04-13 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
US7285501B2 (en) 2004-09-17 2007-10-23 Hewlett-Packard Development Company, L.P. Method of forming a solution processed device
US7298084B2 (en) 2004-11-02 2007-11-20 3M Innovative Properties Company Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
US7453065B2 (en) 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
US7868326B2 (en) 2004-11-10 2011-01-11 Canon Kabushiki Kaisha Field effect transistor
CA2585190A1 (en) 2004-11-10 2006-05-18 Canon Kabushiki Kaisha Amorphous oxide and field effect transistor
KR20070085879A (ko) 2004-11-10 2007-08-27 캐논 가부시끼가이샤 발광 장치
US7829444B2 (en) 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
US7863611B2 (en) 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
US7791072B2 (en) 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
JPWO2006054469A1 (ja) * 2004-11-22 2008-05-29 日本電気株式会社 強磁性膜、磁気抵抗素子、及び磁気ランダムアクセスメモリ
US7579224B2 (en) 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
TWI569441B (zh) 2005-01-28 2017-02-01 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
TWI472037B (zh) 2005-01-28 2015-02-01 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
US7858451B2 (en) 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en) 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US20060197092A1 (en) 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
JP2006261483A (ja) * 2005-03-18 2006-09-28 Fujitsu Ltd 強誘電体キャパシタ及びその製造方法
US8681077B2 (en) 2005-03-18 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
US7544967B2 (en) 2005-03-28 2009-06-09 Massachusetts Institute Of Technology Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications
US7645478B2 (en) 2005-03-31 2010-01-12 3M Innovative Properties Company Methods of making displays
US8300031B2 (en) 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
JP2006344849A (ja) 2005-06-10 2006-12-21 Casio Comput Co Ltd 薄膜トランジスタ
US7402506B2 (en) 2005-06-16 2008-07-22 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7691666B2 (en) 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7507618B2 (en) 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
KR100711890B1 (ko) 2005-07-28 2007-04-25 삼성에스디아이 주식회사 유기 발광표시장치 및 그의 제조방법
JP2007059128A (ja) 2005-08-23 2007-03-08 Canon Inc 有機ｅｌ表示装置およびその製造方法
JP4850457B2 (ja) 2005-09-06 2012-01-11 キヤノン株式会社 薄膜トランジスタ及び薄膜ダイオード
JP2007073705A (ja) 2005-09-06 2007-03-22 Canon Inc 酸化物半導体チャネル薄膜トランジスタおよびその製造方法
JP5116225B2 (ja) 2005-09-06 2013-01-09 キヤノン株式会社 酸化物半導体デバイスの製造方法
JP4280736B2 (ja) 2005-09-06 2009-06-17 キヤノン株式会社 半導体素子
EP1998373A3 (en) 2005-09-29 2012-10-31 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof
JP5037808B2 (ja) 2005-10-20 2012-10-03 キヤノン株式会社 アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置
WO2007058329A1 (en) 2005-11-15 2007-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5376750B2 (ja) 2005-11-18 2013-12-25 出光興産株式会社 半導体薄膜、及びその製造方法、並びに薄膜トランジスタ、アクティブマトリックス駆動表示パネル
US7998372B2 (en) 2005-11-18 2011-08-16 Idemitsu Kosan Co., Ltd. Semiconductor thin film, method for manufacturing the same, thin film transistor, and active-matrix-driven display panel
WO2007068003A2 (en) * 2005-12-09 2007-06-14 The Uab Research Foundation COMPOSITIONS AND METHODS FOR MODULATING OSTEOBLAST CELL DIFFERENTIATION AND BONE GENERATION THROUGH HIF-1a
TWI292281B (en) 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
US7867636B2 (en) 2006-01-11 2011-01-11 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
JP4977478B2 (ja) 2006-01-21 2012-07-18 三星電子株式会社 ＺｎＯフィルム及びこれを用いたＴＦＴの製造方法
US7576394B2 (en) 2006-02-02 2009-08-18 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
US7977169B2 (en) 2006-02-15 2011-07-12 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
KR20070101595A (ko) 2006-04-11 2007-10-17 삼성전자주식회사 ＺｎＯ ＴＦＴ
US20070252928A1 (en) 2006-04-28 2007-11-01 Toppan Printing Co., Ltd. Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
JP5028033B2 (ja) 2006-06-13 2012-09-19 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP5328083B2 (ja) 2006-08-01 2013-10-30 キヤノン株式会社 酸化物のエッチング方法
JP4609797B2 (ja) 2006-08-09 2011-01-12 Ｎｅｃ液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
JP4332545B2 (ja) 2006-09-15 2009-09-16 キヤノン株式会社 電界効果型トランジスタ及びその製造方法
JP4274219B2 (ja) 2006-09-27 2009-06-03 セイコーエプソン株式会社 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置
JP5164357B2 (ja) 2006-09-27 2013-03-21 キヤノン株式会社 半導体装置及び半導体装置の製造方法
US7622371B2 (en) 2006-10-10 2009-11-24 Hewlett-Packard Development Company, L.P. Fused nanocrystal thin film semiconductor and method
US7772021B2 (en) 2006-11-29 2010-08-10 Samsung Electronics Co., Ltd. Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
JP2008140684A (ja) 2006-12-04 2008-06-19 Toppan Printing Co Ltd カラーｅｌディスプレイおよびその製造方法
KR101303578B1 (ko) 2007-01-05 2013-09-09 삼성전자주식회사 박막 식각 방법
US7825958B2 (en) * 2007-01-25 2010-11-02 Research In Motion Limited Method and apparatus for controlling a camera module to compensate for the light level of a white LED
US8207063B2 (en) 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
KR100851215B1 (ko) 2007-03-14 2008-08-07 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치
US7795613B2 (en) 2007-04-17 2010-09-14 Toppan Printing Co., Ltd. Structure with transistor
KR101325053B1 (ko) 2007-04-18 2013-11-05 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR20080094300A (ko) 2007-04-19 2008-10-23 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이
KR101334181B1 (ko) 2007-04-20 2013-11-28 삼성전자주식회사 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법
CN101663762B (zh) 2007-04-25 2011-09-21 佳能株式会社 氧氮化物半导体
KR101345376B1 (ko) * 2007-05-29 2013-12-24 삼성전자주식회사 ＺｎＯ 계 박막 트랜지스터 및 그 제조방법
KR101092483B1 (ko) 2007-05-31 2011-12-13 캐논 가부시끼가이샤 산화물 반도체를 사용한 박막트랜지스터의 제조 방법
EP2158608A4 (en) * 2007-06-19 2010-07-14 Samsung Electronics Co Ltd OXIDE SEMICONDUCTORS AND THIN FILM TRANSISTORS THEREWITH
US7935964B2 (en) 2007-06-19 2011-05-03 Samsung Electronics Co., Ltd. Oxide semiconductors and thin film transistors comprising the same
KR20090002841A (ko) 2007-07-04 2009-01-09 삼성전자주식회사 산화물 반도체, 이를 포함하는 박막 트랜지스터 및 그 제조방법
JP5395384B2 (ja) 2007-09-07 2014-01-22 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
JP2010103451A (ja) 2007-11-26 2010-05-06 Fujifilm Corp 薄膜電界効果型トランジスタおよびそれを用いた電界発光装置
WO2009070793A1 (en) 2007-11-29 2009-06-04 Pluromed, Inc. Endoscopic mucosal resectioning using purified inverse thermosensitive polymers
JP5215158B2 (ja) * 2007-12-17 2013-06-19 富士フイルム株式会社 無機結晶性配向膜及びその製造方法、半導体デバイス
WO2009084537A1 (ja) * 2007-12-27 2009-07-09 Nippon Mining & Metals Co., Ltd. ａ－ＩＧＺＯ酸化物薄膜の製造方法
KR100943948B1 (ko) * 2008-01-08 2010-02-26 삼성모바일디스플레이주식회사 표시 장치
KR100941850B1 (ko) * 2008-04-03 2010-02-11 삼성모바일디스플레이주식회사 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치
KR101461127B1 (ko) 2008-05-13 2014-11-14 삼성디스플레이 주식회사 반도체 장치 및 이의 제조 방법
TWI500159B (zh) 2008-07-31 2015-09-11 Semiconductor Energy Lab 半導體裝置和其製造方法
TWI495108B (zh) 2008-07-31 2015-08-01 Semiconductor Energy Lab 半導體裝置的製造方法
JP5616038B2 (ja) * 2008-07-31 2014-10-29 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI606592B (zh) 2008-09-01 2017-11-21 半導體能源研究所股份有限公司 半導體裝置的製造方法
US9082857B2 (en) * 2008-09-01 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising an oxide semiconductor layer
JP5435326B2 (ja) * 2008-09-02 2014-03-05 日立金属株式会社 ダイカスト用被覆金型およびその製造方法
KR101644406B1 (ko) 2008-09-12 2016-08-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR20110056542A (ko) 2008-09-12 2011-05-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
JP4623179B2 (ja) 2008-09-18 2011-02-02 ソニー株式会社 薄膜トランジスタおよびその製造方法
KR101999970B1 (ko) 2008-09-19 2019-07-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102413263B1 (ko) 2008-09-19 2022-06-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
KR101659925B1 (ko) 2008-10-03 2016-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치
EP2172977A1 (en) 2008-10-03 2010-04-07 Semiconductor Energy Laboratory Co., Ltd. Display device
JP5451280B2 (ja) 2008-10-09 2014-03-26 キヤノン株式会社 ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置
JP5361651B2 (ja) 2008-10-22 2013-12-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2010047063A1 (ja) * 2008-10-23 2010-04-29 出光興産株式会社 高純度結晶質酸化インジウム半導体膜を有する薄膜トランジスタ、及びその製造方法
WO2010047288A1 (en) 2008-10-24 2010-04-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductordevice
JP5616012B2 (ja) 2008-10-24 2014-10-29 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8741702B2 (en) 2008-10-24 2014-06-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101667909B1 (ko) 2008-10-24 2016-10-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제조방법
EP2180518B1 (en) 2008-10-24 2018-04-25 Semiconductor Energy Laboratory Co, Ltd. Method for manufacturing semiconductor device
KR20130138352A (ko) 2008-11-07 2013-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP2010153802A (ja) 2008-11-20 2010-07-08 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
KR101648927B1 (ko) 2009-01-16 2016-08-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP2010182819A (ja) * 2009-02-04 2010-08-19 Sony Corp 薄膜トランジスタおよび表示装置
US8367486B2 (en) * 2009-02-05 2013-02-05 Semiconductor Energy Laboratory Co., Ltd. Transistor and method for manufacturing the transistor
JP5240059B2 (ja) 2009-05-14 2013-07-17 トヨタ自動車株式会社 排気還流装置の異常検出装置
JP5564331B2 (ja) 2009-05-29 2014-07-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4415062B1 (ja) * 2009-06-22 2010-02-17 富士フイルム株式会社 薄膜トランジスタ及び薄膜トランジスタの製造方法
KR101730347B1 (ko) 2009-09-16 2017-04-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
EP3217435A1 (en) 2009-09-16 2017-09-13 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
KR20120071393A (ko) * 2009-09-24 2012-07-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
KR102054650B1 (ko) 2009-09-24 2019-12-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막 및 반도체 장치
KR101877149B1 (ko) 2009-10-08 2018-07-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체층, 반도체 장치 및 그 제조 방법
KR101763959B1 (ko) 2009-10-08 2017-08-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 표시 장치, 및 전자 기기
KR101669476B1 (ko) 2009-10-30 2016-10-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 논리 회로 및 반도체 장치
JP5596963B2 (ja) * 2009-11-19 2014-09-24 出光興産株式会社 スパッタリングターゲット及びそれを用いた薄膜トランジスタ
KR101800852B1 (ko) 2009-11-20 2017-12-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101800854B1 (ko) 2009-11-20 2017-11-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터
JP5584103B2 (ja) 2009-12-04 2014-09-03 株式会社半導体エネルギー研究所 半導体装置
CN102648525B (zh) 2009-12-04 2016-05-04 株式会社半导体能源研究所 显示装置
JP5727204B2 (ja) 2009-12-11 2015-06-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2011138934A (ja) 2009-12-28 2011-07-14 Sony Corp 薄膜トランジスタ、表示装置および電子機器
JP5532305B2 (ja) * 2010-01-08 2014-06-25 独立行政法人産業技術総合研究所 金属酸化物ナノ結晶の製造方法、金属酸化物ナノ結晶配列膜の作製方法、金属酸化物ナノ結晶配列膜被覆基板及びその製造方法
EP2533293A4 (en) 2010-02-01 2016-12-07 Nec Corp AMORPHIC OXID THIN LAYER, THIN FILM TRANSISTOR THEREWITH, AND METHOD FOR PRODUCING THE THIN-LAYER TRANSISTOR
WO2011132769A1 (ja) 2010-04-23 2011-10-27 株式会社日立製作所 半導体装置およびそれを用いたｒｆｉｄタグならびに表示装置
JP2012023880A (ja) * 2010-07-15 2012-02-02 Hitachi Car Eng Co Ltd ブラシレスモータの制御装置
DE112011102644B4 (de) 2010-08-06 2019-12-05 Semiconductor Energy Laboratory Co., Ltd. Integrierte Halbleiterschaltung
KR20130106398A (ko) 2010-09-15 2013-09-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 그 제작 방법
JP5780902B2 (ja) * 2010-10-12 2015-09-16 出光興産株式会社 半導体薄膜、薄膜トランジスタ及びその製造方法
US8809852B2 (en) 2010-11-30 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor film, semiconductor element, semiconductor device, and method for manufacturing the same
KR101457833B1 (ko) 2010-12-03 2014-11-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5864054B2 (ja) * 2010-12-28 2016-02-17 株式会社半導体エネルギー研究所 半導体装置
US8536571B2 (en) 2011-01-12 2013-09-17 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US9494829B2 (en) 2011-01-28 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and liquid crystal display device containing the same
JP5429718B2 (ja) 2011-03-08 2014-02-26 合同会社先端配線材料研究所 酸化物半導体用電極、その形成方法
US8686416B2 (en) 2011-03-25 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US9006803B2 (en) 2011-04-22 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing thereof
CN102760697B (zh) * 2011-04-27 2016-08-03 株式会社半导体能源研究所 半导体装置的制造方法
JP6110075B2 (ja) * 2011-05-13 2017-04-05 株式会社半導体エネルギー研究所 表示装置
US8693626B2 (en) 2011-06-17 2014-04-08 Uop Llc Solid material characterization with X-ray spectra in both transmission and fluoresence modes
JP5517268B2 (ja) * 2012-03-26 2014-06-11 株式会社日本触媒 微粒子状金属酸化物とその用途
IN2015DN03772A (enExample) 2012-11-08 2015-10-02 Semiconductor Energy Lab
JP6108103B2 (ja) 2013-06-06 2017-04-05 トヨタ自動車株式会社 巻線装置及び巻線方法
JP7101049B2 (ja) 2018-06-06 2022-07-14 朋和産業株式会社 食品用包装袋
JP6594576B1 (ja) 2018-06-07 2019-10-23 キヤノン株式会社 光学系、それを備える撮像装置及び撮像システム
JP7114059B2 (ja) 2018-06-07 2022-08-08 三甲株式会社 トレー
JP6991930B2 (ja) 2018-06-07 2022-01-13 相互印刷株式会社 プレススルーパックの包装体
JP6788174B1 (ja) 2019-06-11 2020-11-25 馨 林谷 母板に雑草粘着液排除孔のある刈り払い刃。

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006165529A (ja) * 2004-11-10 2006-06-22 Canon Inc 非晶質酸化物、及び電界効果型トランジスタ
JP2008042067A (ja) * 2006-08-09 2008-02-21 Canon Inc 酸化物半導体膜のドライエッチング方法
JP2010226101A (ja) * 2009-02-27 2010-10-07 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP2011029630A (ja) * 2009-06-30 2011-02-10 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
WO2011027467A1 (ja) * 2009-09-04 2011-03-10 株式会社 東芝 薄膜トランジスタ及びその製造方法
JP2012186383A (ja) * 2011-03-07 2012-09-27 Dainippon Printing Co Ltd 薄膜トランジスタの製造方法

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11652110B2 (en) 2012-11-08 2023-05-16 Semiconductor Energy Laboratory Co., Ltd. Metal oxide film and method for forming metal oxide film
US10461099B2 (en) 2012-11-08 2019-10-29 Semiconductor Energy Laboratory Co., Ltd. Metal oxide film and method for forming metal oxide film
US12302639B2 (en) 2012-11-08 2025-05-13 Semiconductor Energy Laboratory Co., Ltd. Metal oxide film and method for forming metal oxide film
US11978742B2 (en) 2012-11-08 2024-05-07 Semiconductor Energy Laboratory Co., Ltd. Metal oxide film and method for forming metal oxide film
US9831274B2 (en) 2012-11-08 2017-11-28 Semiconductor Energy Laboratory Co., Ltd. Metal oxide film and method for forming metal oxide film
US9871058B2 (en) 2012-11-08 2018-01-16 Semiconductor Energy Laboratory Co., Ltd. Metal oxide film and method for forming metal oxide film
US9881939B2 (en) 2012-11-08 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Metal oxide film and method for forming metal oxide film
JP2017123485A (ja) * 2012-11-08 2017-07-13 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
US10892282B2 (en) 2012-11-08 2021-01-12 Semiconductor Energy Laboratory Co., Ltd. Metal oxide film and method for forming metal oxide film
JP2015046499A (ja) * 2013-08-28 2015-03-12 三菱電機株式会社 薄膜トランジスタおよびその製造方法ならびに液晶表示装置
WO2017125797A1 (ja) * 2016-01-18 2017-07-27 株式会社半導体エネルギー研究所 金属酸化物膜及びその形成方法、ならびに半導体装置
US11721769B2 (en) 2016-03-22 2023-08-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the same
JP2020205437A (ja) * 2016-03-22 2020-12-24 株式会社半導体エネルギー研究所 トランジスタ
US12046679B2 (en) 2016-03-22 2024-07-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the same
US11489076B2 (en) 2016-03-22 2022-11-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the same
JP2017188674A (ja) * 2016-04-01 2017-10-12 株式会社半導体エネルギー研究所 複合酸化物半導体、およびその作製方法
JP7033853B2 (ja) 2016-04-01 2022-03-11 株式会社半導体エネルギー研究所 複合酸化物半導体、およびその作製方法
JP2025036491A (ja) * 2016-05-19 2025-03-14 株式会社半導体エネルギー研究所 複合酸化物半導体
CN110692125A (zh) * 2017-05-31 2020-01-14 夏普株式会社 有源矩阵基板及其制造方法
CN110692125B (zh) * 2017-05-31 2023-10-27 夏普株式会社 有源矩阵基板及其制造方法
WO2018221294A1 (ja) * 2017-05-31 2018-12-06 シャープ株式会社 アクティブマトリクス基板およびその製造方法
US11069722B2 (en) 2017-05-31 2021-07-20 Sharp Kabushiki Kaisha Active matrix substrate and method of manufacturing same
WO2025186692A1 (ja) * 2024-03-08 2025-09-12 株式会社半導体エネルギー研究所 半導体装置の作製方法

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JP6502605B2 (ja) 2019-04-17
JP6246404B2 (ja) 2017-12-13
JP2019145805A (ja) 2019-08-29
JP7676094B2 (ja) 2025-05-14
KR20190090083A (ko) 2019-07-31
KR101710316B1 (ko) 2017-02-24
US20150270405A1 (en) 2015-09-24
US11978742B2 (en) 2024-05-07
KR20160042464A (ko) 2016-04-19
JP2016065317A (ja) 2016-04-28
JP5894702B1 (ja) 2016-03-30
KR101728289B1 (ko) 2017-04-18
TW201430920A (zh) 2014-08-01
JP2015172247A (ja) 2015-10-01
KR20190090082A (ko) 2019-07-31
DE112013007567B3 (de) 2018-11-15
JP5894694B2 (ja) 2016-03-30
CN104769150A (zh) 2015-07-08
US20140124776A1 (en) 2014-05-08
US20180323220A1 (en) 2018-11-08
JP2019114808A (ja) 2019-07-11
JP5894693B2 (ja) 2016-03-30
JP2020061564A (ja) 2020-04-16
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