|
US656670A
(en)
*
|
1899-08-25 |
1900-08-28 |
Farbenfabriken Of Elberfeld Company |
Blue anthrarufin dye and process of making same.
|
|
SU560683A1
(ru)
*
|
1975-12-23 |
1977-06-05 |
Ордена Трудового Красного Знамени Научно-Исследовательский Институт Технологии Автомобильной Промышленности |
Устройство дл выталкивани поковок
|
|
CA1154117A
(en)
|
1978-06-12 |
1983-09-20 |
Masaya Tanaka |
Liquid leakage detection system
|
|
US4346164A
(en)
|
1980-10-06 |
1982-08-24 |
Werner Tabarelli |
Photolithographic method for the manufacture of integrated circuits
|
|
JPS57117238A
(en)
|
1981-01-14 |
1982-07-21 |
Nippon Kogaku Kk <Nikon> |
Exposing and baking device for manufacturing integrated circuit with illuminometer
|
|
JPS57153433A
(en)
|
1981-03-18 |
1982-09-22 |
Hitachi Ltd |
Manufacturing device for semiconductor
|
|
JPS58202448A
(ja)
|
1982-05-21 |
1983-11-25 |
Hitachi Ltd |
露光装置
|
|
JPS5919912A
(ja)
*
|
1982-07-26 |
1984-02-01 |
Hitachi Ltd |
液浸距離保持装置
|
|
DD221563A1
(de)
*
|
1983-09-14 |
1985-04-24 |
Mikroelektronik Zt Forsch Tech |
Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur
|
|
DD224448A1
(de)
|
1984-03-01 |
1985-07-03 |
Zeiss Jena Veb Carl |
Einrichtung zur fotolithografischen strukturuebertragung
|
|
US4672271A
(en)
*
|
1985-04-15 |
1987-06-09 |
Omniprise, Inc. |
Apparatus and method for automatic operation of a high pressure mercury arc lamp
|
|
JPS6265326A
(ja)
*
|
1985-09-18 |
1987-03-24 |
Hitachi Ltd |
露光装置
|
|
JPS63157419A
(ja)
|
1986-12-22 |
1988-06-30 |
Toshiba Corp |
微細パタ−ン転写装置
|
|
JPH01276043A
(ja)
|
1988-04-28 |
1989-11-06 |
Mitsubishi Cable Ind Ltd |
導波路型液体検知器
|
|
JPH0336940U
(https=)
|
1989-08-22 |
1991-04-10 |
|
|
|
US5138643A
(en)
|
1989-10-02 |
1992-08-11 |
Canon Kabushiki Kaisha |
Exposure apparatus
|
|
JP2885845B2
(ja)
*
|
1989-10-02 |
1999-04-26 |
キヤノン株式会社 |
Ｘ線露光装置
|
|
JPH0449614A
(ja)
*
|
1990-06-19 |
1992-02-19 |
Canon Inc |
Ｘ線露光装置
|
|
JP2897355B2
(ja)
|
1990-07-05 |
1999-05-31 |
株式会社ニコン |
アライメント方法，露光装置，並びに位置検出方法及び装置
|
|
JP2830492B2
(ja)
|
1991-03-06 |
1998-12-02 |
株式会社ニコン |
投影露光装置及び投影露光方法
|
|
JPH04305915A
(ja)
*
|
1991-04-02 |
1992-10-28 |
Nikon Corp |
密着型露光装置
|
|
JPH04305917A
(ja)
|
1991-04-02 |
1992-10-28 |
Nikon Corp |
密着型露光装置
|
|
JPH0590351U
(ja)
|
1991-05-20 |
1993-12-10 |
株式会社ツーデン |
漏液センサ
|
|
JPH0562877A
(ja)
|
1991-09-02 |
1993-03-12 |
Yasuko Shinohara |
光によるｌｓｉ製造縮小投影露光装置の光学系
|
|
JPH05173639A
(ja)
*
|
1991-12-20 |
1993-07-13 |
Fujitsu Ltd |
位置制御装置及びその制御方法
|
|
JP3246615B2
(ja)
|
1992-07-27 |
2002-01-15 |
株式会社ニコン |
照明光学装置、露光装置、及び露光方法
|
|
JPH06188169A
(ja)
|
1992-08-24 |
1994-07-08 |
Canon Inc |
結像方法及び該方法を用いる露光装置及び該方法を用いるデバイス製造方法
|
|
US5559582A
(en)
*
|
1992-08-28 |
1996-09-24 |
Nikon Corporation |
Exposure apparatus
|
|
JPH06124873A
(ja)
|
1992-10-09 |
1994-05-06 |
Canon Inc |
液浸式投影露光装置
|
|
JP2753930B2
(ja)
*
|
1992-11-27 |
1998-05-20 |
キヤノン株式会社 |
液浸式投影露光装置
|
|
JP3412704B2
(ja)
|
1993-02-26 |
2003-06-03 |
株式会社ニコン |
投影露光方法及び装置、並びに露光装置
|
|
JPH06288915A
(ja)
*
|
1993-03-30 |
1994-10-18 |
Dainippon Screen Mfg Co Ltd |
処理液検出装置
|
|
JPH07220990A
(ja)
|
1994-01-28 |
1995-08-18 |
Hitachi Ltd |
パターン形成方法及びその露光装置
|
|
US7365513B1
(en)
|
1994-04-01 |
2008-04-29 |
Nikon Corporation |
Positioning device having dynamically isolated frame, and lithographic device provided with such a positioning device
|
|
US5528118A
(en)
|
1994-04-01 |
1996-06-18 |
Nikon Precision, Inc. |
Guideless stage with isolated reaction stage
|
|
US5874820A
(en)
|
1995-04-04 |
1999-02-23 |
Nikon Corporation |
Window frame-guided stage mechanism
|
|
US6989647B1
(en)
|
1994-04-01 |
2006-01-24 |
Nikon Corporation |
Positioning device having dynamically isolated frame, and lithographic device provided with such a positioning device
|
|
JP3555230B2
(ja)
|
1994-05-18 |
2004-08-18 |
株式会社ニコン |
投影露光装置
|
|
JPH0886612A
(ja)
*
|
1994-09-19 |
1996-04-02 |
Canon Inc |
光ヘテロダイン干渉を利用した位置ずれ検出装置
|
|
US5623853A
(en)
|
1994-10-19 |
1997-04-29 |
Nikon Precision Inc. |
Precision motion stage with single guide beam and follower stage
|
|
US6008500A
(en)
|
1995-04-04 |
1999-12-28 |
Nikon Corporation |
Exposure apparatus having dynamically isolated reaction frame
|
|
JPH08316125A
(ja)
|
1995-05-19 |
1996-11-29 |
Hitachi Ltd |
投影露光方法及び露光装置
|
|
JPH08316124A
(ja)
|
1995-05-19 |
1996-11-29 |
Hitachi Ltd |
投影露光方法及び露光装置
|
|
JP3137174B2
(ja)
|
1995-09-08 |
2001-02-19 |
横河電機株式会社 |
Ｉｃテスタのテストヘッド
|
|
KR100228036B1
(ko)
|
1996-02-09 |
1999-11-01 |
니시무로 타이죠 |
표면에너지 분포측정장치 및 측정방법
|
|
US5885134A
(en)
|
1996-04-18 |
1999-03-23 |
Ebara Corporation |
Polishing apparatus
|
|
US5825043A
(en)
*
|
1996-10-07 |
1998-10-20 |
Nikon Precision Inc. |
Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
|
|
JP4029183B2
(ja)
|
1996-11-28 |
2008-01-09 |
株式会社ニコン |
投影露光装置及び投影露光方法
|
|
EP1944654A3
(en)
|
1996-11-28 |
2010-06-02 |
Nikon Corporation |
An exposure apparatus and an exposure method
|
|
JP4029182B2
(ja)
|
1996-11-28 |
2008-01-09 |
株式会社ニコン |
露光方法
|
|
US5815246A
(en)
|
1996-12-24 |
1998-09-29 |
U.S. Philips Corporation |
Two-dimensionally balanced positioning device, and lithographic device provided with such a positioning device
|
|
WO1998028665A1
(en)
|
1996-12-24 |
1998-07-02 |
Koninklijke Philips Electronics N.V. |
Two-dimensionally balanced positioning device with two object holders, and lithographic device provided with such a positioning device
|
|
DE69829614T2
(de)
|
1997-03-10 |
2006-03-09 |
Asml Netherlands B.V. |
Lithographiegerät mit einer positioniervorrichtung mit zwei objekthaltern
|
|
JPH10335236A
(ja)
|
1997-05-28 |
1998-12-18 |
Nikon Corp |
露光装置、その光洗浄方法及び半導体デバイスの製造方法
|
|
EP0874283B1
(en)
|
1997-04-23 |
2003-09-03 |
Nikon Corporation |
Optical exposure apparatus and photo-cleaning method
|
|
JPH10335235A
(ja)
|
1997-05-28 |
1998-12-18 |
Nikon Corp |
露光装置、その光洗浄方法及び半導体デバイスの製造方法
|
|
JP3747566B2
(ja)
|
1997-04-23 |
2006-02-22 |
株式会社ニコン |
液浸型露光装置
|
|
US6268904B1
(en)
|
1997-04-23 |
2001-07-31 |
Nikon Corporation |
Optical exposure apparatus and photo-cleaning method
|
|
JP3377165B2
(ja)
*
|
1997-05-19 |
2003-02-17 |
キヤノン株式会社 |
半導体露光装置
|
|
JP3817836B2
(ja)
|
1997-06-10 |
2006-09-06 |
株式会社ニコン |
露光装置及びその製造方法並びに露光方法及びデバイス製造方法
|
|
JPH1116816A
(ja)
|
1997-06-25 |
1999-01-22 |
Nikon Corp |
投影露光装置、該装置を用いた露光方法、及び該装置を用いた回路デバイスの製造方法
|
|
JPH1131647A
(ja)
*
|
1997-07-11 |
1999-02-02 |
Oki Electric Ind Co Ltd |
投影露光装置
|
|
JP4210871B2
(ja)
|
1997-10-31 |
2009-01-21 |
株式会社ニコン |
露光装置
|
|
JP4208277B2
(ja)
*
|
1997-11-26 |
2009-01-14 |
キヤノン株式会社 |
露光方法及び露光装置
|
|
US6020964A
(en)
|
1997-12-02 |
2000-02-01 |
Asm Lithography B.V. |
Interferometer system and lithograph apparatus including an interferometer system
|
|
JPH11176727A
(ja)
*
|
1997-12-11 |
1999-07-02 |
Nikon Corp |
投影露光装置
|
|
US6897963B1
(en)
|
1997-12-18 |
2005-05-24 |
Nikon Corporation |
Stage device and exposure apparatus
|
|
US6208407B1
(en)
|
1997-12-22 |
2001-03-27 |
Asm Lithography B.V. |
Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement
|
|
JPH11204390A
(ja)
*
|
1998-01-14 |
1999-07-30 |
Canon Inc |
半導体製造装置およびデバイス製造方法
|
|
JPH11264756A
(ja)
*
|
1998-03-18 |
1999-09-28 |
Tokyo Electron Ltd |
液面検出器および液面検出方法、ならびに基板処理装置
|
|
WO1999049504A1
(fr)
|
1998-03-26 |
1999-09-30 |
Nikon Corporation |
Procede et systeme d'exposition par projection
|
|
JP2000058436A
(ja)
*
|
1998-08-11 |
2000-02-25 |
Nikon Corp |
投影露光装置及び露光方法
|
|
WO2000030163A1
(en)
*
|
1998-11-18 |
2000-05-25 |
Nikon Corporation |
Exposure method and device
|
|
EP1018669B1
(en)
|
1999-01-08 |
2006-03-01 |
ASML Netherlands B.V. |
Projection lithography with servo control
|
|
US6566770B1
(en)
*
|
1999-06-15 |
2003-05-20 |
Canon Kabushiki Kaisha |
Semiconductor manufacturing apparatus and device manufacturing method
|
|
AU5653699A
(en)
|
1999-09-20 |
2001-04-24 |
Nikon Corporation |
Parallel link mechanism, exposure system and method of manufacturing the same, and method of manufacturing devices
|
|
WO2001035168A1
(en)
|
1999-11-10 |
2001-05-17 |
Massachusetts Institute Of Technology |
Interference lithography utilizing phase-locked scanning beams
|
|
EP1107067B1
(en)
*
|
1999-12-01 |
2006-12-27 |
ASML Netherlands B.V. |
Positioning apparatus and lithographic apparatus comprising the same
|
|
US7187503B2
(en)
|
1999-12-29 |
2007-03-06 |
Carl Zeiss Smt Ag |
Refractive projection objective for immersion lithography
|
|
US6995930B2
(en)
|
1999-12-29 |
2006-02-07 |
Carl Zeiss Smt Ag |
Catadioptric projection objective with geometric beam splitting
|
|
JP2001203145A
(ja)
*
|
2000-01-20 |
2001-07-27 |
Nikon Corp |
露光装置
|
|
TW588222B
(en)
|
2000-02-10 |
2004-05-21 |
Asml Netherlands Bv |
Cooling of voice coil motors in lithographic projection apparatus
|
|
JP2001308003A
(ja)
*
|
2000-02-15 |
2001-11-02 |
Nikon Corp |
露光方法及び装置、並びにデバイス製造方法
|
|
US6472643B1
(en)
|
2000-03-07 |
2002-10-29 |
Silicon Valley Group, Inc. |
Substrate thermal management system
|
|
US20020041377A1
(en)
|
2000-04-25 |
2002-04-11 |
Nikon Corporation |
Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method
|
|
JP2002014005A
(ja)
|
2000-04-25 |
2002-01-18 |
Nikon Corp |
空間像計測方法、結像特性計測方法、空間像計測装置及び露光装置
|
|
JP2001345245A
(ja)
|
2000-05-31 |
2001-12-14 |
Nikon Corp |
露光方法及び露光装置並びにデバイス製造方法
|
|
JP2002015978A
(ja)
*
|
2000-06-29 |
2002-01-18 |
Canon Inc |
露光装置
|
|
JP3469537B2
(ja)
|
2000-07-21 |
2003-11-25 |
サンクス株式会社 |
漏液センサ
|
|
TW591653B
(en)
*
|
2000-08-08 |
2004-06-11 |
Koninkl Philips Electronics Nv |
Method of manufacturing an optically scannable information carrier
|
|
KR100471018B1
(ko)
*
|
2000-11-28 |
2005-03-08 |
스미도모쥬기가이고교 가부시키가이샤 |
두 개의 대상물 간의 갭 조절장치 및 조절방법
|
|
KR100866818B1
(ko)
|
2000-12-11 |
2008-11-04 |
가부시키가이샤 니콘 |
투영광학계 및 이 투영광학계를 구비한 노광장치
|
|
JP2002305140A
(ja)
*
|
2001-04-06 |
2002-10-18 |
Nikon Corp |
露光装置及び基板処理システム
|
|
WO2002091078A1
(en)
|
2001-05-07 |
2002-11-14 |
Massachusetts Institute Of Technology |
Methods and apparatus employing an index matching medium
|
|
JP2002365809A
(ja)
*
|
2001-06-12 |
2002-12-18 |
Nsk Ltd |
分割逐次露光装置
|
|
TW569288B
(en)
*
|
2001-06-19 |
2004-01-01 |
Tokyo Electron Ltd |
Substrate processing apparatus, liquid processing apparatus and liquid processing method
|
|
KR20030002514A
(ko)
|
2001-06-29 |
2003-01-09 |
삼성전자 주식회사 |
웨이퍼가 장착될 척을 냉각시키기 위한 냉매 경로에서의냉매 누설을 감지할 수 있는 냉각 시스템
|
|
TWI226077B
(en)
*
|
2001-07-05 |
2005-01-01 |
Tokyo Electron Ltd |
Liquid processing apparatus and liquid processing method
|
|
JP2003022958A
(ja)
*
|
2001-07-09 |
2003-01-24 |
Canon Inc |
露光装置、デバイス製造方法、半導体製造工場および露光装置の保守方法
|
|
TW529172B
(en)
|
2001-07-24 |
2003-04-21 |
Asml Netherlands Bv |
Imaging apparatus
|
|
JP2003037051A
(ja)
*
|
2001-07-25 |
2003-02-07 |
Canon Inc |
露光装置及びその制御方法、並びに半導体デバイスの製造方法
|
|
JP3869306B2
(ja)
*
|
2001-08-28 |
2007-01-17 |
東京エレクトロン株式会社 |
現像処理方法および現像液塗布装置
|
|
JP2003142366A
(ja)
*
|
2001-10-31 |
2003-05-16 |
Canon Inc |
投影露光装置および該装置に用いるガス状態監視方法
|
|
JP3880480B2
(ja)
*
|
2001-12-06 |
2007-02-14 |
東京エレクトロン株式会社 |
液処理装置
|
|
TWI236944B
(en)
|
2001-12-17 |
2005-08-01 |
Tokyo Electron Ltd |
Film removal method and apparatus, and substrate processing system
|
|
JP3990148B2
(ja)
*
|
2001-12-17 |
2007-10-10 |
東京エレクトロン株式会社 |
処理システム
|
|
DE10229249A1
(de)
|
2002-03-01 |
2003-09-04 |
Zeiss Carl Semiconductor Mfg |
Refraktives Projektionsobjektiv mit einer Taille
|
|
US7154676B2
(en)
|
2002-03-01 |
2006-12-26 |
Carl Zeiss Smt A.G. |
Very-high aperture projection objective
|
|
US7190527B2
(en)
|
2002-03-01 |
2007-03-13 |
Carl Zeiss Smt Ag |
Refractive projection objective
|
|
DE10210899A1
(de)
|
2002-03-08 |
2003-09-18 |
Zeiss Carl Smt Ag |
Refraktives Projektionsobjektiv für Immersions-Lithographie
|
|
DE10229818A1
(de)
|
2002-06-28 |
2004-01-15 |
Carl Zeiss Smt Ag |
Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem
|
|
US7092069B2
(en)
|
2002-03-08 |
2006-08-15 |
Carl Zeiss Smt Ag |
Projection exposure method and projection exposure system
|
|
KR20040104691A
(ko)
|
2002-05-03 |
2004-12-10 |
칼 짜이스 에스엠테 아게 |
높은 개구를 갖는 투영 대물렌즈
|
|
JP2004072076A
(ja)
*
|
2002-06-10 |
2004-03-04 |
Nikon Corp |
露光装置及びステージ装置、並びにデバイス製造方法
|
|
TWI307526B
(en)
|
2002-08-06 |
2009-03-11 |
Nikon Corp |
Supporting device and the mamufacturing method thereof, stage device and exposure device
|
|
KR20050035890A
(ko)
|
2002-08-23 |
2005-04-19 |
가부시키가이샤 니콘 |
투영 광학계, 포토리소그래피 방법, 노광 장치 및 그 이용방법
|
|
US6988326B2
(en)
|
2002-09-30 |
2006-01-24 |
Lam Research Corporation |
Phobic barrier meniscus separation and containment
|
|
US7367345B1
(en)
|
2002-09-30 |
2008-05-06 |
Lam Research Corporation |
Apparatus and method for providing a confined liquid for immersion lithography
|
|
US6954993B1
(en)
|
2002-09-30 |
2005-10-18 |
Lam Research Corporation |
Concentric proximity processing head
|
|
US7383843B2
(en)
|
2002-09-30 |
2008-06-10 |
Lam Research Corporation |
Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer
|
|
US7093375B2
(en)
|
2002-09-30 |
2006-08-22 |
Lam Research Corporation |
Apparatus and method for utilizing a meniscus in substrate processing
|
|
US6788477B2
(en)
|
2002-10-22 |
2004-09-07 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Apparatus for method for immersion lithography
|
|
EP1420298B1
(en)
|
2002-11-12 |
2013-02-20 |
ASML Netherlands B.V. |
Lithographic apparatus
|
|
SG121822A1
(en)
|
2002-11-12 |
2006-05-26 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
|
SG121819A1
(en)
*
|
2002-11-12 |
2006-05-26 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
|
DE60335595D1
(de)
|
2002-11-12 |
2011-02-17 |
Asml Netherlands Bv |
Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
|
|
US7110081B2
(en)
|
2002-11-12 |
2006-09-19 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
SG135052A1
(en)
|
2002-11-12 |
2007-09-28 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
|
CN101470360B
(zh)
|
2002-11-12 |
2013-07-24 |
Asml荷兰有限公司 |
光刻装置和器件制造方法
|
|
DE10253679A1
(de)
|
2002-11-18 |
2004-06-03 |
Infineon Technologies Ag |
Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren
|
|
SG131766A1
(en)
|
2002-11-18 |
2007-05-28 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
|
DE10258718A1
(de)
|
2002-12-09 |
2004-06-24 |
Carl Zeiss Smt Ag |
Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives
|
|
JP4352874B2
(ja)
|
2002-12-10 |
2009-10-28 |
株式会社ニコン |
露光装置及びデバイス製造方法
|
|
WO2004053954A1
(ja)
*
|
2002-12-10 |
2004-06-24 |
Nikon Corporation |
露光装置及びデバイス製造方法
|
|
JP4232449B2
(ja)
|
2002-12-10 |
2009-03-04 |
株式会社ニコン |
露光方法、露光装置、及びデバイス製造方法
|
|
US6992750B2
(en)
|
2002-12-10 |
2006-01-31 |
Canon Kabushiki Kaisha |
Exposure apparatus and method
|
|
AU2003302831A1
(en)
*
|
2002-12-10 |
2004-06-30 |
Nikon Corporation |
Exposure method, exposure apparatus and method for manufacturing device
|
|
SG157962A1
(en)
|
2002-12-10 |
2010-01-29 |
Nikon Corp |
Exposure apparatus and method for producing device
|
|
CN100370533C
(zh)
|
2002-12-13 |
2008-02-20 |
皇家飞利浦电子股份有限公司 |
用于照射层的方法和用于将辐射导向层的装置
|
|
US7010958B2
(en)
|
2002-12-19 |
2006-03-14 |
Asml Holding N.V. |
High-resolution gas gauge proximity sensor
|
|
EP1584089B1
(en)
|
2002-12-19 |
2006-08-02 |
Koninklijke Philips Electronics N.V. |
Method and device for irradiating spots on a layer
|
|
ATE365962T1
(de)
|
2002-12-19 |
2007-07-15 |
Koninkl Philips Electronics Nv |
Verfahren und anordnung zum bestrahlen einer schicht mittels eines lichtpunkts
|
|
US6781670B2
(en)
|
2002-12-30 |
2004-08-24 |
Intel Corporation |
Immersion lithography
|
|
US7090964B2
(en)
|
2003-02-21 |
2006-08-15 |
Asml Holding N.V. |
Lithographic printing with polarized light
|
|
US7206059B2
(en)
|
2003-02-27 |
2007-04-17 |
Asml Netherlands B.V. |
Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
|
|
US6943941B2
(en)
|
2003-02-27 |
2005-09-13 |
Asml Netherlands B.V. |
Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
|
|
US7029832B2
(en)
|
2003-03-11 |
2006-04-18 |
Samsung Electronics Co., Ltd. |
Immersion lithography methods using carbon dioxide
|
|
US20050164522A1
(en)
|
2003-03-24 |
2005-07-28 |
Kunz Roderick R. |
Optical fluids, and systems and methods of making and using the same
|
|
KR20110104084A
(ko)
|
2003-04-09 |
2011-09-21 |
가부시키가이샤 니콘 |
액침 리소그래피 유체 제어 시스템
|
|
SG141426A1
(en)
|
2003-04-10 |
2008-04-28 |
Nikon Corp |
Environmental system including vacuum scavange for an immersion lithography apparatus
|
|
JP4656057B2
(ja)
|
2003-04-10 |
2011-03-23 |
株式会社ニコン |
液浸リソグラフィ装置用電気浸透素子
|
|
EP3352010A1
(en)
|
2003-04-10 |
2018-07-25 |
Nikon Corporation |
Run-off path to collect liquid for an immersion lithography apparatus
|
|
KR101431938B1
(ko)
|
2003-04-10 |
2014-08-19 |
가부시키가이샤 니콘 |
액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템
|
|
KR101289959B1
(ko)
|
2003-04-11 |
2013-07-26 |
가부시키가이샤 니콘 |
액침 리소그래피에 의한 광학기기의 세정방법
|
|
SG139733A1
(en)
|
2003-04-11 |
2008-02-29 |
Nikon Corp |
Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly
|
|
JP4582089B2
(ja)
|
2003-04-11 |
2010-11-17 |
株式会社ニコン |
液浸リソグラフィ用の液体噴射回収システム
|
|
KR20050122269A
(ko)
|
2003-04-17 |
2005-12-28 |
가부시키가이샤 니콘 |
액침 리소그래피를 이용하기 위한 오토포커스 소자의광학적 배열
|
|
JP4146755B2
(ja)
|
2003-05-09 |
2008-09-10 |
松下電器産業株式会社 |
パターン形成方法
|
|
JP4025683B2
(ja)
|
2003-05-09 |
2007-12-26 |
松下電器産業株式会社 |
パターン形成方法及び露光装置
|
|
TWI295414B
(en)
|
2003-05-13 |
2008-04-01 |
Asml Netherlands Bv |
Lithographic apparatus and device manufacturing method
|
|
US6995833B2
(en)
|
2003-05-23 |
2006-02-07 |
Canon Kabushiki Kaisha |
Projection optical system, exposure apparatus, and device manufacturing method
|
|
TWI474380B
(zh)
|
2003-05-23 |
2015-02-21 |
尼康股份有限公司 |
A method of manufacturing an exposure apparatus and an element
|
|
TWI442694B
(zh)
|
2003-05-30 |
2014-06-21 |
Ａｓｍｌ荷蘭公司 |
微影裝置及元件製造方法
|
|
US7213963B2
(en)
|
2003-06-09 |
2007-05-08 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
EP1489461A1
(en)
|
2003-06-11 |
2004-12-22 |
ASML Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
US7317504B2
(en)
|
2004-04-08 |
2008-01-08 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
EP1486827B1
(en)
|
2003-06-11 |
2011-11-02 |
ASML Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
JP4054285B2
(ja)
|
2003-06-12 |
2008-02-27 |
松下電器産業株式会社 |
パターン形成方法
|
|
JP4084710B2
(ja)
|
2003-06-12 |
2008-04-30 |
松下電器産業株式会社 |
パターン形成方法
|
|
US6867844B2
(en)
|
2003-06-19 |
2005-03-15 |
Asml Holding N.V. |
Immersion photolithography system and method using microchannel nozzles
|
|
JP4029064B2
(ja)
|
2003-06-23 |
2008-01-09 |
松下電器産業株式会社 |
パターン形成方法
|
|
JP4084712B2
(ja)
|
2003-06-23 |
2008-04-30 |
松下電器産業株式会社 |
パターン形成方法
|
|
JP2005019616A
(ja)
*
|
2003-06-25 |
2005-01-20 |
Canon Inc |
液浸式露光装置
|
|
JP4343597B2
(ja)
|
2003-06-25 |
2009-10-14 |
キヤノン株式会社 |
露光装置及びデバイス製造方法
|
|
DE60308161T2
(de)
|
2003-06-27 |
2007-08-09 |
Asml Netherlands B.V. |
Lithographischer Apparat und Verfahren zur Herstellung eines Artikels
|
|
EP1498778A1
(en)
*
|
2003-06-27 |
2005-01-19 |
ASML Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
US6809794B1
(en)
|
2003-06-27 |
2004-10-26 |
Asml Holding N.V. |
Immersion photolithography system and method using inverted wafer-projection optics interface
|
|
JP3862678B2
(ja)
*
|
2003-06-27 |
2006-12-27 |
キヤノン株式会社 |
露光装置及びデバイス製造方法
|
|
EP1494074A1
(en)
|
2003-06-30 |
2005-01-05 |
ASML Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
WO2005006026A2
(en)
|
2003-07-01 |
2005-01-20 |
Nikon Corporation |
Using isotopically specified fluids as optical elements
|
|
US7128024B2
(en)
*
|
2003-07-15 |
2006-10-31 |
Doyle Ii John Conan |
System and method for measuring animals
|
|
US7738074B2
(en)
|
2003-07-16 |
2010-06-15 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
US7384149B2
(en)
|
2003-07-21 |
2008-06-10 |
Asml Netherlands B.V. |
Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system
|
|
EP1500982A1
(en)
|
2003-07-24 |
2005-01-26 |
ASML Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
US7006209B2
(en)
|
2003-07-25 |
2006-02-28 |
Advanced Micro Devices, Inc. |
Method and apparatus for monitoring and controlling imaging in immersion lithography systems
|
|
JP4492239B2
(ja)
|
2003-07-28 |
2010-06-30 |
株式会社ニコン |
露光装置及びデバイス製造方法、並びに露光装置の制御方法
|
|
US7175968B2
(en)
|
2003-07-28 |
2007-02-13 |
Asml Netherlands B.V. |
Lithographic apparatus, device manufacturing method and a substrate
|
|
US7326522B2
(en)
|
2004-02-11 |
2008-02-05 |
Asml Netherlands B.V. |
Device manufacturing method and a substrate
|
|
JP4492600B2
(ja)
|
2003-07-28 |
2010-06-30 |
株式会社ニコン |
露光装置及び露光方法、並びにデバイス製造方法
|
|
EP1503244A1
(en)
|
2003-07-28 |
2005-02-02 |
ASML Netherlands B.V. |
Lithographic projection apparatus and device manufacturing method
|
|
KR20190002749A
(ko)
*
|
2003-07-28 |
2019-01-08 |
가부시키가이샤 니콘 |
노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의 제어 방법
|
|
US7779781B2
(en)
*
|
2003-07-31 |
2010-08-24 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
US7700267B2
(en)
|
2003-08-11 |
2010-04-20 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Immersion fluid for immersion lithography, and method of performing immersion lithography
|
|
US7061578B2
(en)
|
2003-08-11 |
2006-06-13 |
Advanced Micro Devices, Inc. |
Method and apparatus for monitoring and controlling imaging in immersion lithography systems
|
|
US7579135B2
(en)
|
2003-08-11 |
2009-08-25 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Lithography apparatus for manufacture of integrated circuits
|
|
US7085075B2
(en)
|
2003-08-12 |
2006-08-01 |
Carl Zeiss Smt Ag |
Projection objectives including a plurality of mirrors with lenses ahead of mirror M3
|
|
US6844206B1
(en)
|
2003-08-21 |
2005-01-18 |
Advanced Micro Devices, Llp |
Refractive index system monitor and control for immersion lithography
|
|
US7070915B2
(en)
|
2003-08-29 |
2006-07-04 |
Tokyo Electron Limited |
Method and system for drying a substrate
|
|
US6954256B2
(en)
|
2003-08-29 |
2005-10-11 |
Asml Netherlands B.V. |
Gradient immersion lithography
|
|
US7014966B2
(en)
|
2003-09-02 |
2006-03-21 |
Advanced Micro Devices, Inc. |
Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems
|
|
EP1660925B1
(en)
|
2003-09-03 |
2015-04-29 |
Nikon Corporation |
Apparatus and method for providing fluid for immersion lithography
|
|
JP4378136B2
(ja)
*
|
2003-09-04 |
2009-12-02 |
キヤノン株式会社 |
露光装置及びデバイス製造方法
|
|
US6961186B2
(en)
|
2003-09-26 |
2005-11-01 |
Takumi Technology Corp. |
Contact printing using a magnified mask image
|
|
US7369217B2
(en)
|
2003-10-03 |
2008-05-06 |
Micronic Laser Systems Ab |
Method and device for immersion lithography
|
|
JP2005136374A
(ja)
*
|
2003-10-06 |
2005-05-26 |
Matsushita Electric Ind Co Ltd |
半導体製造装置及びそれを用いたパターン形成方法
|
|
US7678527B2
(en)
|
2003-10-16 |
2010-03-16 |
Intel Corporation |
Methods and compositions for providing photoresist with improved properties for contacting liquids
|
|
JP2005159322A
(ja)
|
2003-10-31 |
2005-06-16 |
Nikon Corp |
定盤、ステージ装置及び露光装置並びに露光方法
|
|
TWI361450B
(en)
|
2003-10-31 |
2012-04-01 |
Nikon Corp |
Platen, stage device, exposure device and exposure method
|
|
EP1685446A2
(en)
|
2003-11-05 |
2006-08-02 |
DSM IP Assets B.V. |
A method and apparatus for producing microchips
|
|
US7924397B2
(en)
|
2003-11-06 |
2011-04-12 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Anti-corrosion layer on objective lens for liquid immersion lithography applications
|
|
US7545481B2
(en)
|
2003-11-24 |
2009-06-09 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
WO2005054953A2
(en)
|
2003-11-24 |
2005-06-16 |
Carl-Zeiss Smt Ag |
Holding device for an optical element in an objective
|
|
US7125652B2
(en)
|
2003-12-03 |
2006-10-24 |
Advanced Micro Devices, Inc. |
Immersion lithographic process using a conforming immersion medium
|
|
JP2005175016A
(ja)
*
|
2003-12-08 |
2005-06-30 |
Canon Inc |
基板保持装置およびそれを用いた露光装置ならびにデバイス製造方法
|
|
WO2005059617A2
(en)
|
2003-12-15 |
2005-06-30 |
Carl Zeiss Smt Ag |
Projection objective having a high aperture and a planar end surface
|
|
EP1700163A1
(en)
|
2003-12-15 |
2006-09-13 |
Carl Zeiss SMT AG |
Objective as a microlithography projection objective with at least one liquid lens
|
|
US20050185269A1
(en)
|
2003-12-19 |
2005-08-25 |
Carl Zeiss Smt Ag |
Catadioptric projection objective with geometric beam splitting
|
|
US7460206B2
(en)
|
2003-12-19 |
2008-12-02 |
Carl Zeiss Smt Ag |
Projection objective for immersion lithography
|
|
JP5102492B2
(ja)
|
2003-12-19 |
2012-12-19 |
カール・ツァイス・エスエムティー・ゲーエムベーハー |
結晶素子を有するマイクロリソグラフィー投影用対物レンズ
|
|
US7394521B2
(en)
|
2003-12-23 |
2008-07-01 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
US7589818B2
(en)
|
2003-12-23 |
2009-09-15 |
Asml Netherlands B.V. |
Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
|
|
US7119884B2
(en)
|
2003-12-24 |
2006-10-10 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
US20050147920A1
(en)
|
2003-12-30 |
2005-07-07 |
Chia-Hui Lin |
Method and system for immersion lithography
|
|
US7088422B2
(en)
|
2003-12-31 |
2006-08-08 |
International Business Machines Corporation |
Moving lens for immersion optical lithography
|
|
JP4371822B2
(ja)
|
2004-01-06 |
2009-11-25 |
キヤノン株式会社 |
露光装置
|
|
JP4429023B2
(ja)
|
2004-01-07 |
2010-03-10 |
キヤノン株式会社 |
露光装置及びデバイス製造方法
|
|
US20050153424A1
(en)
|
2004-01-08 |
2005-07-14 |
Derek Coon |
Fluid barrier with transparent areas for immersion lithography
|
|
DE602005008707D1
(de)
|
2004-01-14 |
2008-09-18 |
Zeiss Carl Smt Ag |
Catadioptrisches projektionsobjektiv
|
|
CN101799587B
(zh)
|
2004-01-16 |
2012-05-30 |
卡尔蔡司Smt有限责任公司 |
光学系统、投影系统及微结构半导体部件的制造方法
|
|
WO2005069078A1
(en)
|
2004-01-19 |
2005-07-28 |
Carl Zeiss Smt Ag |
Microlithographic projection exposure apparatus with immersion projection lens
|
|
CN1938646B
(zh)
|
2004-01-20 |
2010-12-15 |
卡尔蔡司Smt股份公司 |
曝光装置和用于投影透镜的测量装置
|
|
US7026259B2
(en)
|
2004-01-21 |
2006-04-11 |
International Business Machines Corporation |
Liquid-filled balloons for immersion lithography
|
|
US7391501B2
(en)
|
2004-01-22 |
2008-06-24 |
Intel Corporation |
Immersion liquids with siloxane polymer for immersion lithography
|
|
US8852850B2
(en)
|
2004-02-03 |
2014-10-07 |
Rochester Institute Of Technology |
Method of photolithography using a fluid and a system thereof
|
|
JP4506674B2
(ja)
|
2004-02-03 |
2010-07-21 |
株式会社ニコン |
露光装置及びデバイス製造方法
|
|
US7050146B2
(en)
|
2004-02-09 |
2006-05-23 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
|
WO2005076084A1
(en)
|
2004-02-09 |
2005-08-18 |
Carl Zeiss Smt Ag |
Projection objective for a microlithographic projection exposure apparatus
|
|
CN101727021A
(zh)
|
2004-02-13 |
2010-06-09 |
卡尔蔡司Smt股份公司 |
微平版印刷投影曝光装置的投影物镜
|
|
EP1721201A1
(en)
|
2004-02-18 |
2006-11-15 |
Corning Incorporated |
Catadioptric imaging system for high numerical aperture imaging with deep ultraviolet light
|
|
WO2005081292A1
(ja)
*
|
2004-02-20 |
2005-09-01 |
Nikon Corporation |
露光装置、供給方法及び回収方法、露光方法、ならびにデバイス製造方法
|
|
JP2005259789A
(ja)
|
2004-03-09 |
2005-09-22 |
Nikon Corp |
検知システム及び露光装置、デバイス製造方法
|
|
US20050205108A1
(en)
|
2004-03-16 |
2005-09-22 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Method and system for immersion lithography lens cleaning
|
|
JP2005268700A
(ja)
|
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|
|
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|
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|
|
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|
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|
|
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(en)
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|
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|
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|
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|
|
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|
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|
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|
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|
|
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|
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|
|
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|
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|
|
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|
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|
|
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(en)
*
|
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|
|
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(en)
|
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|
|
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|
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|
|
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|
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|
|
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(en)
|
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|
|
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(ko)
|
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|
|
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|
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|
|
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|
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|
|
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(zh)
|
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|
|
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(ko)
|
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|
|
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*
|
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|
|
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|
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|
|
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|
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